64M16 Search Results

nt5cc64m

Contextual Info: 1Gb DDR3 SDRAM F-Die NT5CB C 128M8FN / NT5CB(C)64M16FP Options Features  Differential clock input (CK, ) Speeds  Differential bidirectional data strobe  DDR3 - 1866  TDQS and /TDQS pair for X8  DDR3/DDR3L/DDR3L RS - 1600  8n-bit prefetch architecture

Contextual Info: 1Gb DDR3 SDRAM F-Die NT5CB C 128M8FN / NT5CB(C)64M16FP Options Features  Differential clock input (CK, ) Speeds  Differential bidirectional data strobe  DDR3 - 1866  TDQS and /TDQS pair for X8  DDR3/DDR3L/DDR3L RS - 1600 2,3 2,4  8n-bit prefetch architecture

ISC-MPD-64M16F

Abstract: KM29U128 128M NAND Flash Memory Irvine Sensors
Contextual Info: ADVANCE INFORMATION Part No. ISC-MPD-64M16F Irvine Sensors Corporation Microelectronics Products Division 1 Gigabit FLASH Memory Stack Features: Low Profile: same PCB area as a single

Contextual Info: 1Gb DDR3 SDRAM F-Die NT5CB C 128M8FN / NT5CB(C)64M16FP Options Features  Differential clock input (CK, ) Speeds  Differential bidirectional data strobe  DDR3 - 1866  TDQS and /TDQS pair for X8  DDR3/DDR3L/DDR3L RS - 1600 2,3 2,4  8n-bit prefetch architecture

Contextual Info: Nanya Technology Corp. DDR3 L 1Gb SDRAM NT5CB(C)128M8FN / NT5CB(C)64M16FP NT5CB(C)128M8FN / NT5CB(C)64M16FP Commercial, Industrial and Automotive DDR3(L) 1Gb SDRAM Features  Signal Integrity  JEDEC DDR3 Compliant - Configurable DS for system compatibility

Contextual Info: Nanya Technology Corp. DDR3 L 1Gb SDRAM NT5CB(C)128M8FN / NT5CB(C)64M16FP NT5CB(C)128M8FN / NT5CB(C)64M16FP Commercial, Industrial and Automotive DDR3(L) 1Gb SDRAM Features  Signal Integrity  JEDEC DDR3 Compliant - Configurable DS for system compatibility

MT47H128M8CF-25

Abstract: 8 resistor array 10k smd 103
Contextual Info: 1Gb: x8, x16 Automotive DDR2 SDRAM Features Automotive DDR2 SDRAM MT47H128M8 – 16 Meg x 8 x 8 banks 64M16 – 8 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • • • • • • • • • • Marking • Configuration

A1833

Contextual Info: Advance‡ 2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF – 32 Meg x 16 x 4 banks MT46H256M16L2 – 32 Meg x 16 x 4 banks x 2 MT46H64M32LF – 16 Meg x 32 x 4 banks MT46H128M32L2 – 16 Meg x 32 x 4 banks x 2 MT46H256M32L4 – 16 Meg x 32 x 4 banks x 4

MT46H64M16

Abstract: 6S55 MT46H64M16LF
Contextual Info: 1Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM 64M16LF – 16 Meg x 16 x 4 Banks MT46H32M32LF – 8 Meg x 32 x 4 Banks Features Options • Vdd/Vddq – 1.8V/1.8V • Configuration – 64 Meg x 16 16 Meg x 16 x 4 banks – 32 Meg x 32 (8 Meg x 32 x 4 banks)

Contextual Info: 1Gb: x4, x8, x16 DDR SDRAM Features Double Data Rate DDR SDRAM MT46V256M4 – 64 Meg x 4 x 4 banks MT46V128M8 – 32 Meg x 8 x 4 banks 64M16 – 16 Meg x 16 x 4 banks Features Options • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V VDD = VDDQ = +2.6V ±0.1V (DDR400)

Contextual Info: PRELIMINARY‡ 1Gb: x4, x8, x16 DDR2 SDRAM DDR2 SDRAM MT47H256M4–32 MEG X 4 X 8 BANKS MT47H128M8–16 MEG X 8 X 8 BANKS 64M16–8 MEG X 16 X 8 BANKS For the latest data sheet, please refer to the Micron Web site: http://www.micron.com/datasheets Features

Contextual Info: 1Gb: x4, x8, x16 – DDR2 SDRAM Features DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks 64M16 – 8 Meg x 16 x 8 banks For the latest data sheet, please refer to the Micron Web site: http://www.micron.com/ddr2 Features

ELPIDA lpddr

Abstract: 1GB-x16 samsung lpddr LPDDR2 SDRAM samsung MT46H64M16LF cross infineon power cycling
Contextual Info: 1Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM 64M16LF – 16 Meg x 16 x 4 banks MT46H32M32LF – 8 Meg x 32 x 4 banks Features Options • VDD/VDDQ – 1.8V/1.8V • Configuration – 64 Meg x 16 16 Meg x 16 x 4 banks – 32 Meg x 32 (8 Meg x 32 x 4 banks)

MT46H64M16LF

Contextual Info: 1Gb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM 64M16LF – 16 Meg x 16 x 4 banks MT46H32M32LF – 8 Meg x 32 x 4 banks Features Options • • • • • VDD/VDDQ – 1.8V/1.8V • Configuration – 64 Meg x 16 16 Meg x 16 x 4 banks – 32 Meg x 32 (8 Meg x 32 x 4 banks)

nanya 8gb DDR3

Abstract: nanya 4gb DDR3 SODIMM DDR3 DIMM 16H16 DDR3 rDIMM SODIMM ddr2 8gb TSOPII inphi PC3-12800 SSTL-15
Contextual Info: NANYA Module Part Numbering Guide NT 4GT T 64 U 8 H NANYA Technology Module Density Product Family T=DDR2 SDRAM Data Width 64=x64 U N AC Speed 256=256MB 512=512MB 1G=1GB 2G=2GB 4G=4GB 8G=8GB 16T=16GB Stacking 32T=32GB (Stacking) D=DDR SDRAM C=DDR3 SDRAM

AC82PM45

Abstract: AC82GM45 KB926 AF82801IBM SLB8Q N10M-GE1-S G545A1 NV10M-GS tps51620 LA-5081P KIWA7
Contextual Info: A B C D E 1 1 KIWA7/A8 2 2 Schematics Document Mobile Penryn uFCPGA with Intel Cantiga_GM/PM+ICH9-M core logic 3 3 REV:0.4 4 4 Issued Date Compal Electronics, Inc. Compal Secret Data Security Classification 2008/03/25 Deciphered Date 2008/04/ Title THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL

ALC271X

Abstract: alc271x audio rt8205e RT8205EGQW KB930 kb930qf KB930QF A1 ENE KB930QF A1 LA-6901P RTM890N-631-VB-GRT
Contextual Info: A B C D E Compal Confidential 1 Model Name : P5WE0 File Name : LA-6901P BOM P/N:43 1 Compal Confidential 2 2 P5WE0 M/B Schematics Document Intel Sandy Bridge Processor with DDRIII + Cougar Point PCH Nvidia N12P GS/GV 2010-08-11 3 3 REV:0.1 4 4 Issued Date

MT46V64M16P-6TA

Abstract: 256M4 DDR266B DDR333B DDR400 DDR400B MT46V128M8 MT46V256M4 MT46V64M16 PC3200
Contextual Info: 1Gb: x4, x8, x16 DDR SDRAM Features DDR SDRAM MT46V256M4 – 64 Meg x 4 x 4 Banks MT46V128M8 – 32 Meg x 8 x 4 Banks 64M16 – 16 Meg x 16 x 4 Banks Features Options • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V VDD = +2.6V ±0.1V, VDDQ = +2.6V ±0.1V DDR400

Lpddr2 Idd7

Abstract: 216-ball LPDDR2 NT6SM16M32 NT6SM16M32AK-S1
Contextual Info: 512Mb LPSDR SDRAM NT6SM16M32AK Feature  Options Fully synchronous; all signals registered on positive edge of Marking  VDD /VDDQ system clock -1.8V/1.8V  M Internal, pipelined operation; column address can be changed  Configuration every clock cycle

Contextual Info: Preliminary‡ 1Gb: x4, x8, x16 – DDR2 SDRAM Features DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks 64M16 – 8 Meg x 16 x 8 banks For the latest data sheet, please refer to the Micron Web site: http://www.micron.com/ddr2

DDR266B

Abstract: MT46V128M8 MT46V256M4 MT46V64M16 MT46V64M16TG-75
Contextual Info: PRELIMINARY‡ 1Gb: x4, x8, x16 DDR SDRAM DOUBLE DATA RATE DDR SDRAM MT46V256M4 – 64 MEG X 4 X 4 BANKS MT46V128M8 – 32 MEG X 8 X 4 BANKS 64M16 – 16 MEG X 16 X 4 BANKS For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/datasheets

MT41K64M16

Contextual Info: 1Gb: x4, x8, x16 DDR3L SDRAM Description DDR3L SDRAM MT41K256M4 – 128 Meg x 4 x 8 banks MT41K128M8 – 64 Meg x 8 x 8 banks 64M16 – 32 Meg x 16 x 8 banks • TC of 0°C to 95°C – 64ms, 8192-cycle refresh at 0°C to 85°C – 32ms at 85°C to 95°C

MT41K64M16

Contextual Info: Preliminary‡ 1Gb: x4, x8, x16 DDR3L SDRAM Description DDR3L SDRAM MT41K256M4 – 128 Meg x 4 x 8 banks MT41K128M8 – 64 Meg x 8 x 8 banks 64M16 – 32 Meg x 16 x 8 banks • Write leveling • Multipurpose register • Output driver calibration Description

A100S

Abstract: MT48H32M32
Contextual Info: 1Gb: x32 Mobile LPSDR SDRAM Features Mobile LPSDR SDRAM MT48H32M32LF/LG – 8 Meg x 32 x 4 Banks Features Options Marking • VDD/VDDQ: 1.8V/1.8V • Addressing – Standard addressing option – Reduced page size option1 • Configuration – 32 Meg x 32 8 Meg x 32 x 4