128M8 Search Results

lem HA

Abstract: 50-PIN dps128m8bny
Contextual Info: DENSE-PAC 1 Megabit High Speed CMOS SRAM M I C R O S Y S T E M S 128M8CnY/BnY, DPS128X8CA3/BA3 DESCRIPTION: The DPS 128M8CnY/BnY, DPS128X8CA3/BA3 H igh Speed SRAM devices are a revolutionary new m em ory subsystem using Dense-Pac Microsystems' ceram ic Stackable Leadless C hip Carriers SLCC .

nt5cc64m

Contextual Info: 1Gb DDR3 SDRAM F-Die NT5CB C 128M8FN / NT5CB(C)64M16FP Options Features  Differential clock input (CK, ) Speeds  Differential bidirectional data strobe  DDR3 - 1866  TDQS and /TDQS pair for X8  DDR3/DDR3L/DDR3L RS - 1600  8n-bit prefetch architecture

Contextual Info: Part No. 96-128M80 - QFP to PGA Adapter for EIAJ 128 Position, .0315 [.80] Pitch FEATURES: • Convert surface mount QFP packages to a 15 x 15 PGA footprint. • Reduce costs by using less expensive QFP packages to replace PGA footprints in existing designs.

Contextual Info: Part No. 96-128M80 - QFP to PGA Adapter for EIAJ 128 Position, .0315 [.80] Pitch FEATURES: • Convert surface mount QFP packages to a 15 x 15 PGA footprint. •Reduce costs by using less expensive QFP packages to replace PGA footprints in existing designs.

Contextual Info: Part No. 96-128M80 - QFP to PGA Adapter for EIAJ 128 Position, .0315 [.80] Pitch FEATURES: • Convert surface mount QFP packages to a 15 x 15 PGA footprint. • Reduce costs by using less expensive QFP packages to replace PGA footprints in existing designs.

Contextual Info: Part No. 96-128M80 - QFP to PGA Adapter for EIAJ 128 Position, .0315 [.80] Pitch FEATURES: • Convert surface mount QFP packages to a 15 x 15 PGA footprint. • Reduce costs by using less expensive QFP packages to replace PGA footprints in existing designs.

Contextual Info: 1Gb DDR3 SDRAM F-Die NT5CB C 128M8FN / NT5CB(C)64M16FP Options Features  Differential clock input (CK, ) Speeds  Differential bidirectional data strobe  DDR3 - 1866  TDQS and /TDQS pair for X8  DDR3/DDR3L/DDR3L RS - 1600 2,3 2,4  8n-bit prefetch architecture

Contextual Info: 1 Megabit High Speed CMOS SRAM D EN SE-PA C DPS 128M8CnY/BnY, DPS128X8CA3/BA3 M I C R O S Y S T E M S DESCRIPTION: The DPS 128M8CnY/BnY, DPS128X8CA3/BA3 High Speed SRAM devices are a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC .

48-PIN

Abstract: 50-PIN tl71 operational 128X8A3
Contextual Info: 1 Megabit CMOS SRAM D E N S E - P A C M I C R O S Y S T E M DPS 128M8n3/DPS 128X8A3 S DESCRIPTION: The D P S 1 2 8 M 8 n Y & D P S 128X 8A 3S R A M devicesarea revolutionary new mem ory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless C hip Carriers SLCC . Available in straight leaded,

Contextual Info: 1Gb DDR3 SDRAM F-Die NT5CB C 128M8FN / NT5CB(C)64M16FP Options Features  Differential clock input (CK, ) Speeds  Differential bidirectional data strobe  DDR3 - 1866  TDQS and /TDQS pair for X8  DDR3/DDR3L/DDR3L RS - 1600 2,3 2,4  8n-bit prefetch architecture

Contextual Info: Nanya Technology Corp. DDR3 L 1Gb SDRAM NT5CB(C)128M8FN / NT5CB(C)64M16FP NT5CB(C)128M8FN / NT5CB(C)64M16FP Commercial, Industrial and Automotive DDR3(L) 1Gb SDRAM Features  Signal Integrity  JEDEC DDR3 Compliant - Configurable DS for system compatibility

MIL-T-10727

Contextual Info: Part No. 96-128M80 - QFP to PGA Adapter for EIAJ 128 Position, .0315 [.80] Pitch FEATURES: • Convert surface mount QFP packages to a 15 x 15 PGA footprint. • Reduce costs by using less expensive QFP packages to replace PGA footprints in existing designs.

Contextual Info: Nanya Technology Corp. DDR3 L 1Gb SDRAM NT5CB(C)128M8FN / NT5CB(C)64M16FP NT5CB(C)128M8FN / NT5CB(C)64M16FP Commercial, Industrial and Automotive DDR3(L) 1Gb SDRAM Features  Signal Integrity  JEDEC DDR3 Compliant - Configurable DS for system compatibility

Contextual Info: Part No. 96-128M80 - QFP to PGA Adapter for EIAJ 128 Position, .0315 [.80] Pitch FEATURES: • Convert surface mount QFP packages to a 15 x 15 PGA footprint. • Reduce costs by using less expensive QFP packages to replace PGA footprints in existing designs.

Contextual Info: 1Gb: x4, x8, x16 DDR SDRAM Features Double Data Rate DDR SDRAM MT46V256M4 – 64 Meg x 4 x 4 banks 128M8 – 32 Meg x 8 x 4 banks MT46V64M16 – 16 Meg x 16 x 4 banks Features Options • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V VDD = VDDQ = +2.6V ±0.1V (DDR400)

B209

Abstract: B-209
Contextual Info: Preliminary‡ 1Gb: x4, x8 DDR3L SDRAM Addendum Description 1.35V DDR3L SDRAM Addendum MT41K256M4 – 32 Meg x 4 x 8 banks 128M8 – 16 Meg x 8 x 8 banks • Selectable BC4 or BL8 on-the-fly OTF • Self refresh mode • TC of 0°C to +95°C – 64ms, 8192-cycle refresh at 0°C to +85°C

Contextual Info: PRELIMINARY‡ 1Gb: x4, x8, x16 DDR2 SDRAM DDR2 SDRAM MT47H256M4–32 MEG X 4 X 8 BANKS 128M8–16 MEG X 8 X 8 BANKS MT47H64M16–8 MEG X 16 X 8 BANKS For the latest data sheet, please refer to the Micron Web site: http://www.micron.com/datasheets Features

Contextual Info: 1Gb: x4, x8, x16 – DDR2 SDRAM Features DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks 128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks For the latest data sheet, please refer to the Micron Web site: http://www.micron.com/ddr2 Features

MT46V64M16P-6TA

Abstract: 1gbDDRx4x8x16
Contextual Info: 1Gb: x4, x8, x16 DDR SDRAM Features Double Data Rate DDR SDRAM MT46V256M4 – 64 Meg x 4 x 4 Banks 128M8 – 32 Meg x 8 x 4 Banks MT46V64M16 – 16 Meg x 16 x 4 Banks Features Options • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V VDD = +2.6V ±0.1V, VDDQ = +2.6V ±0.1V (DDR400)

nanya 8gb DDR3

Abstract: nanya 4gb DDR3 SODIMM DDR3 DIMM 16H16 DDR3 rDIMM SODIMM ddr2 8gb TSOPII inphi PC3-12800 SSTL-15
Contextual Info: NANYA Module Part Numbering Guide NT 4GT T 64 U 8 H NANYA Technology Module Density Product Family T=DDR2 SDRAM Data Width 64=x64 U N AC Speed 256=256MB 512=512MB 1G=1GB 2G=2GB 4G=4GB 8G=8GB 16T=16GB Stacking 32T=32GB (Stacking) D=DDR SDRAM C=DDR3 SDRAM

NT5TU128M8

Abstract: NT5TU128M8HE-AC
Contextual Info: 1Gb DDR2 SDRAM H-Die DDR2 1Gb SDRAM Preliminary 128M8HE / NT5TU64M16HG Specifications and functions are not finalized!! Commercial, Industrial and Automotive DDR2 1Gb SDRAM Features  JEDEC DDR2 Compliant  Data Integrity - Auto Refresh and Self Refresh Modes

MT46V64M16P-6TA

Abstract: 256M4 DDR266B DDR333B DDR400 DDR400B MT46V128M8 MT46V256M4 MT46V64M16 PC3200
Contextual Info: 1Gb: x4, x8, x16 DDR SDRAM Features DDR SDRAM MT46V256M4 – 64 Meg x 4 x 4 Banks 128M8 – 32 Meg x 8 x 4 Banks MT46V64M16 – 16 Meg x 16 x 4 Banks Features Options • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V VDD = +2.6V ±0.1V, VDDQ = +2.6V ±0.1V DDR400

Contextual Info: Preliminary‡ 1Gb: x4, x8, x16 – DDR2 SDRAM Features DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks 128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks For the latest data sheet, please refer to the Micron Web site: http://www.micron.com/ddr2

DDR266B

Abstract: MT46V128M8 MT46V256M4 MT46V64M16 MT46V64M16TG-75
Contextual Info: PRELIMINARY‡ 1Gb: x4, x8, x16 DDR SDRAM DOUBLE DATA RATE DDR SDRAM MT46V256M4 – 64 MEG X 4 X 4 BANKS 128M8 – 32 MEG X 8 X 4 BANKS MT46V64M16 – 16 MEG X 16 X 4 BANKS For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/datasheets