EHP00 Search Results

Contextual Info: SIEMENS PNP Silicon AF Transistors • • • • BCW67 BCW 68 For general AF applications High current gain Low collector-emitter saturation voltage Complementary types: BCW 65, BCW 66 NPN Type BCW BCW BCW BCW BCW BCW 67 67 67 68 68 68 A B C F G H Marking

bta 05

Abstract: BTA05
Contextual Info: SIEMENS NPN Silicon AF Transistors SMBTA 05 SMBTA 06 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: SMBTA 55 SMBTA 56 PNP Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) SMBTA 05

marking BSs sot23

Abstract: 82c80 marking code bss sot TL1040 marking BSs sot23 siemens
Contextual Info: SIEMENS PNP Silicon Switching Transistors BSS 80 BSS 82 • High DC current gain • Low coltector-emitter saturation voltage • Complementary types: BSS 79, BSS 81 NPN Type BSS BSS BSS BSS 80 80 82 82 B C B C Marking Ordering Code (tape and reel) PinC onfiguration

marking code 8Fn

Abstract: MARKING CODE FCB
Contextual Info: SIEM EN S NPN Silicon High-Voltage Transistor BFN 22 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance • Complementary type: BFN 23 PNP

Contextual Info: SIEMENS PNP Silicon Darlington Transistors • • • • PZTA 63 PZTA 64 For general AF applications High collector current High current gain Complementary types: PZTA 13, PZTA 14 NPN Type Marking Ordering Code (tape and reel) Pin Conf igural ion 1 2 3

sot23 s1a marking

Abstract: marking code S1A sot23
Contextual Info: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906

MARKING CODE CCB

Abstract: BC847S
Contextual Info: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see

BFN16

Abstract: BFN17 BFN18 BFN19
Contextual Info: BFN16, BFN18 NPN Silicon High-Voltage Transistors 1
Suitable for video output stages in TV sets and 2 switching power supplies 3
High breakdown voltage
Low collector-emitter saturation voltage
Complementary types: BFN17, BFN19 PNP 2 VPS05162 Type

BAW78D

Abstract: BFN18 BFN19
Contextual Info: BFN18 NPN Silicon High-Voltage Transistors • Suitable for video output stages TV sets 1 2 and switching power supplies 3 2 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: BFN19 PNP Type BFN18 Marking DE

BCP29

Abstract: BCP49 VPS05163
Contextual Info: BCP29, BCP49 NPN Silicon Darlington Transistors
For general AF applications 4
High collector current
High current gain
Complementary types: BCP28/48 PNP 3 2 C(2,4) 1 B(1) VPS05163 E(3) EHA00009 Type Marking Pin Configuration Package BCP29 BCP 29

VSO05561

Abstract: 818-25W
Contextual Info: BC 817W, BC 818W NPN Silicon AF Transistors 3 • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage 2 • Complementary types: BC 807W, BC 808W PNP 1 Pin Configuration VSO05561 Type

BCW60

Abstract: BCX70 BCW60A BCW60B BCW60C BCW60D BCW60FF BCW60FN BCW61 BCX71
Contextual Info: BCW60, BCX70 NPN Silicon AF Transistors
For AF input stages and driver applications 3
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BCW61, BCX71 PNP 2 1 Type Marking Pin Configuration

BC846

Abstract: BC847 BC848 BC849 BC850 BC856 BC856A BC856B BC857A BC860
Contextual Info: BC856.BC860 PNP Silicon AF Transistors
For AF input stages and driver applications 3
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BC846, BC847, BC848 2 BC849, BC850 NPN 1 Type

marking 6bs

Abstract: ic 817 BC817U SC74
Contextual Info: BC817U NPN Silicon Transistor Array
For AF input stages and driver applications 5 4 6
High current gain
Low collector-emitter saturation voltage
Two galvanic internal isolated Transistors 3 2 with good matching in one package 1 VPW09197 C1 B2 E2

bc237 siemens

Abstract: BC238 BC239 BC237 237B C307B C238C C237B marking CODE 50G TO92 C-239
Contextual Info: SIE » • SIEMENS flS35bQS G041540 134 « S I E G SIEMENS AKTIENGESELLSCHAF BC 237 . BC 239 NPN Silicon AF Transistors • High current gain • Low collector-emitter saturation voltage • Complementary types: B C 307, B C 308, BC 309 PNP Type BC BC

BFN24

Abstract: BFN25 BFN26 BFN27
Contextual Info: BFN24, BFN26 NPN Silicon High-Voltage Transistors 3
Suitable for video output stages in TV sets and switching power supplies
High breakdown voltage
Low collector-emitter saturation voltage 2
Complementary types: BFN25, BFN27 PNP 1 Type Marking Pin Configuration

BCP51

Abstract: BCP51-10 BCP51-16 BCP52 BCP52-10 BCP52-16 BCP53 BCP54 BCP56 VPS05163
Contextual Info: BCP51.BCP53 PNP Silicon AF Transistors
For AF driver and output stages
High collector current 4
Low collector-emitter saturation voltage
Complementary types: BCP54.BCP56 NPN 3 2 1 Type Marking Pin Configuration BCP51 BCP 51 1=B 2=C 3=E 4=C SOT223

BCP52-16

Abstract: BFN38 BFN39 E6327 VPS05163
Contextual Info: BFN38 NPN Silicon High-Voltage Transistors • Suitable for video output stages in TV sets and 4 switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage 3 • Complementary type: BFN39 PNP 2 1 Type Marking BFN38 BFN 38

marking BCV

Abstract: bcv 49
Contextual Info: BCV 29, BCV 49 NPN Silicon Darlington Transistors 1 • For general AF applications 2 • High collector current 3 • High current gain • Complementary types: BCV 28, BCV 48 PNP 2 VPS05162 Type Marking Pin Configuration Package BCV 29 EF 1=B 2=C 3=E 4=C

Contextual Info: BC 846U PN NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applications 5 4 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP 3 2 Transistors in one package 1 VPW09197 C1

BCV27

Abstract: BCP SOT23
Contextual Info: BCV 27, BCV 47 NPN Silicon Darlington Transistors 3 • For general AF applications • High collector current • High current gain • Complementary types: BCV 26, BCV 46 PNP 2 1 Type Marking Pin Configuration BCV 27 FFs 1=B 2=E 3=C SOT-23 BCV 47 FGs 1=B

bc817

Contextual Info: BC817./ BC818. NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807./W, BC808./W PNP Type Marking Pin Configuration

BCP52-16

Abstract: PZTA42 PZTA92
Contextual Info: PZTA42 NPN Silicon High-Voltage Transistors • High breakdown voltage 4 • Low collector-emitter saturation voltage 3 2 • Complementary type: PZTA92 PNP 1 • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type PZTA42 Marking PZTA42 1=B

BC817SU

Abstract: BR B6S BCW66H SC74 transistor marking code 2C marking B6S
Contextual Info: BC817SU NPN Silicon AF Transistor • For general AF applications 4 • High collector current 3 5 2 6 • High current gain 1 • Low collector-emitter saturation voltage • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 Type BC817SU