EASY UTAH Search Results

easy utah

Abstract: reference design using infineon c165utah h9412 Infineon USB microcontroller jtag rs232 c166 programming c h941 ocds C165
Contextual Info: TO OL BR IEF The EASY UTAH V1.1 demonstrates the C165UTAH, which consists of the Infineon C166 16 bit core along with USB, IOM2 and HDLC modules. UTAH’s ports and functions can be completely tested and evaluated. A ready-to-use device driver and a reference application are included, along with a demonstration

SANYO LC7881

Abstract: 6850 uart TDA1545 audio synthesizer
Contextual Info: m- ICS2110 Integrated Circuit Systems, Inc. Advance Information SoundCore Wavetable Synthesizer Features Description True 16-bit CD-quality sound at minimal system cost. Simultaneous wavetable synthesis and PCM playback 8 or 16-bit ISA bus interface for easy integration in PC

Contextual Info: H!gh Performance 32KxS 3.3V CMOS SRAM p i AS7C3256 AS7C3256L Low Voltage 32Kx8 CMOS SRAM Common I/O FEATURES • Organization: 32,768 words x 8 bits • Equal access and cycle times • Single 3.3 ±0.3V power supply • Easy memory expansion with CE and OE inputs

Contextual Info: High-Performance 64Kx8 CMOS SRAM p i AS7C512 AS7C512L 64Kx8 CMOS SRAM Common I/O FEATURES Equal access and cycle times • Organization; 65,536 words x 8 bits • Highspeed • Easy memory expansion with CE1, CE2, OE inputs - 12/15/20/25/35 ns address access time

Contextual Info: High Performance 32Kx8 CMOS SRAM p i AS7C256 AS7C256L 32Kx8 CMOS SRAM Common I/O FEATURES • Organization: 32,768 words x 8 bits Equal access and cycle times • High speed Easy memory expansion with CE and OE inputs - 10/12/15/20/25/35 ns address access time

Contextual Info: High Performance 128Kx8 3.3 V CMOS SRAM H AS7C31024 AS7C31024L PRELIMINARY Low Voltage 128Kx8 CMOS SRAM Common I/O FEATU RES Equal access and cycle times • Organization: 131,072 words x 8 bits • Easy memory expansion with CE1, CE2 and OE inputs • Single 3.3 ±0.3V power supply

pcm slot

Abstract: ta 8375
Contextual Info: VLSI Tech no lo gy , in c . PRELIMINARY VL7C116 DIGITAL SWITCH MEMORY INTERFACE DSMI FEATURES • Allows easy implementation of digital PCM (Pulse Code Modulation) time slot switch • Control lines readily permit operation for non-PCM applications capable of routing any 8-bit tim e slot of

circuit diagram for speed control for highways

Abstract: VF-8X tt 3043 transistor tt 2222 vlsi technology LA 7555 SERIAL, strobe,clock INPUT PARALLEL sj 3159 TT 2222 VL7C116-QC
Contextual Info: l'i.XÄ 2 6 ÎÎK1 VLSI T ech no lo gy , in c . PRELIMINARY VL7C116 DIGITAL SWITCH MEMORY INTERFACE DSMI FEATURES • Allows easy implementation of digital PCM (Pulse Code Modulation) time slot switch capable of routing any 8-bit time slot of any of the 16 Incoming PCM highways

advantages of microcontroller

Abstract: c161u usb rs232 microsoft mouse microcontroller RS232 mouse diagram adapter rs232 diagram advantages of microcontroller for automatic c165utah C541U Family Serial Communication Controllers
Contextual Info: Reprint from elektronik industrie 3 – 1999, Hüthig GmbH, Heidelberg/München Easy Surf with ISDN over USB Frank Sauber The Universal Serial Bus USB was introduced some years ago to make it easier to connect external components such as keyboard, mouse, joystick, printer, scanner, modem or mouse to

AS7C512-20JC

Abstract: AS7C512-15pc AS7C512 10n12 AS7C512-12JC 7C256 AS7C512L AS7CS12 Static Random Access Memory SRAM 7CS12-20
Contextual Info: High-Performance p i AS7C512 : AS7C512L CMOS SRAM 64Kx8 CMOS SRAM Common I/O FEATURES Organization; 65,536 words x 8 bits Equal access and cycle times High speed Easy memory expansion with CE1, CE2, OE inputs - 12/15/20/25/35 ns address access time TTL-compatible, three-state I/O

am2064

Abstract: 4558 pin configuration AM2018 burndy qile68p-410t surround circuit using ic 4558 pin diagram burndy ms CLB 2032 TCA 785 application note RS 4558 QILE68P-410T
Contextual Info: a A m 2 0 6 4 /A m Advanced Micro Devices 2 0 1 8 Programmable Gate Array DISTINCTIVE CHARACTERISTICS • Up to 1800 usable gate equivalence for higher board densities • TTL or CMOS input threshold levels allow for more board flexibility • Field programmable gate array means easy and

AS7C256-20JC

Abstract: AS7C256 taa 723 7C256-10 7C256-12 7C256-15 AS7C256L AS7C256-15PC 7C1024
Contextual Info: High Performance 32Kx8 CMOS SRAM AS7C256 AS7C256L 32K×8 CMOS SRAM Common I/O FEATURES • Organization: 32,768 words × 8 bits • Equal access and cycle times • High speed • Easy memory expansion with CE and OE inputs – 10/12/15/20/25/35 ns address access time

AS7C256

Abstract: 256x128x8 TI 344C
Contextual Info: High Performance 32Kx8 CMOS SRAM II ^ L lh . AS7C256 AS7C256L 32Kx8 CMOS SRAM Common I/O FEATURES • Organization: 32,768 words x 8 bits • Equal access and cycle times • High speed • Easy memory expansion with CE and OE inputs - 10/12/15/20/25/35 ns address access time

8272 floppy disk controller

Abstract: intel floppy disk controller 8272a intel floppy disk controller 8272 floppy disk controller 8272 im 358 micro MP 1008 es rts 5821 82C226 DSR 505 f 4556
Contextual Info: m s:, .s i: . m r s 82C 607 M u ltifu n c tio n C o n tro lle r Single Chip UART and Analog Data Separator m Easy interface to the Industry standard floppy disk controllers (765A/765B/8272A 100% functionally compatible to the IBM PS/2 model 50, 60, and 80

0Q004

Abstract: 41516 taa 723
Contextual Info: High Performance 32Kx9 CMOS SRAM II AS7C259 AS7C259L 32Kx9 CMOS SRAM Common I/O FEATU RES Organization: 32,768 words x 9 bits • 2.0V data retention (L version) High speed • Equal access and cycle times - 12/15/20/25/35 ns address access tim e • Easy memory expansion with CE1, CE2, and OE inputs

Contextual Info: High Performance 128Kx8 C M O S SRAM p i AS7C1024 AS7C1024L 128Kx8 CM O S S RAM Common I/O FEATURES • Organization: 131,072 words x 8 bits • Equal access and cycle times • High speed • Easy memory expansion with CE1, CE2, OE inputs - 10/12/15/20/25/35 ns address access time

Contextual Info: II High-Performance SKxS CMOS SRAM AS7CJ64 AS7CÎ64L 8Kx8 CMOS SRAM Common I/O FEATURES • Organization: 8,192 words x 8 bits Equal access and cycle times • High speed Very fast 3 ns output enable access time - 10/12/15/20/25 ns address access time Easy memory expansion with CE1, CE2, OE inputs

Contextual Info: H i g h Pe rf o rm a n c e A S7C4096 A S7 C 34 096 512Kx8 CMOS SRAM A 5 1 2 K x 8 CMOS SRAM Preliminary information Features Easy memory expansion with CE, OE inputs TTL-compatible, three-state I/O 36-pin JEDEC standard package - 400 mil SOJ Center power and ground pins for low noise

Contextual Info: H igh -P erform an ce 128K x9 CM OS SRAM 1 1 A S 7 C Ì0 2 9 A S 7 C I0 2 9 L PRELIMINARY i 28K x9 C M O S S R A M C om m on I/O [FEATURES_ • Organization: 131,072 words x 9 bits • Equal access and cycle times • Highspeed • Easy memory expansion with £E and (5E inputs

32kx8 sram

Contextual Info: High Performance 32KX8 3.3V CMOS SRAM « II AS7C32S6 AS7C3256L « Low voltage 32Kx8 CMOS SRAM Features • O rganization: 3 2 ,7 6 8 w o rd s x 8 bits • Equal access and cycle tim es • Single 3 .3 ± 0.3V p o w e r su pp ly • Easy m em o ry ex p a n sio n w ith CE and OE in pu ts

Contextual Info: H ig h - P e r f o r m a n c e 256K x4 R I A S 7 C I0 2 H A S7C 102X L C M O S SK AM PRELIM INARY 2 5 6 K x 4 C M O S S R A M C o m m o n I/O I FEATURES • Organization: 262,144 words x 4 bits • Equal access and cycle times • Highspeed • Easy memory expansion with (ÜË and ÜE inputs

Contextual Info: H ig li P e rfo rm a n ce AS7C1028 A S7C1028L 256KX4 CMOS SRAM A 2 5 6 K X 4 CMOS SRAM Features • O rg a n iz a tio n : 2 6 2 ,1 4 4 w o rd s x 4 b its • Easy m e m o r y e x p a n sio n w ith CE a n d OE in p u ts • H ig h sp e e d • T T L -c o m p atib le, th re e -s ta te I / O

siemens PMB 6610

Abstract: PEB 4266 T V1.2 taifun 6034-T PMB 6610 PMB 6819 PEB 83000 PEF 22628 PEF 24628 E PEF 24628 psb 50505
Contextual Info: 2006/2007 Published by Infineon Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Communication Edition July 2006 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2006.

2054N

Abstract: PEF 22622 F V1.4 PSB 2163T Q67230-H1128 PEF 20525 F V1.3 peb 2236n infineon peb 2255h 2091n PEF 24911H V2.2 PEB 22554 v2 2
Contextual Info: Oтделение Полупроводники Siemens AG с 01.04.1999 выступает на мировом рынке под новым фирменным названием Infineon Technologies AG и с новым фирменным знаком. Новая фирма является