AS7C3256 Search Results

Contextual Info: 32Kx8 3.3V SRAM AS7C3256 Logic Block Diagram Features ♦ High Performance CMOS: tAA=10-25 ns ♦ Fast OE access: t0 E=3-6 ns ♦ Very low power - 216 m W @ 100 M H z - 3.6 m W @ 10 M H z standby - 1.1 mW @ • I/07 10 M H z standby: L version ♦ Automatic CE power down

Contextual Info: High Performance 32KX83.3Y CMOS SRAM •■ II AS7C3256 AS7G3256L L ow v o ltage 3 2 K x 8 C M O S SR A M Features • • • • O rganization: 32,7 6 8 w o rd s x 8 bits Single 3.3 ± 0.3V p o w e r supply 5V tolerant I /O specification H igh speed - 1 0 / 1 2 / 1 5 / 2 0 ns address access tim e

Contextual Info: February 2006 AS7C3256A-8 3.3V 32K X 8 CMOS SRAM Common I/O Features • Easy memory expansion with CE and OE inputs • TTL-compatible, three-state I/O • 28-pin JEDEC standard packages - 300 mil SOJ - 8 x 13.4 mm TSOP 1 • ESD protection ≥ 2000 volts

as7c256-20pc

Abstract: AS7C256-12JC
Contextual Info: March 2001 AS7C256 AS7C3256 5V/3.3V 32K X 8 CMOS SRAM Common I/O Features • Very low power consumption: STANDBY • AS7C256 (5V version) • AS7C3256 (3.3V version) • Industrial and commercial temperature • Organization: 262,144 words x 16 bits

Contextual Info: Advance information •■ Il AS7C3256K36Z AS7C3256K32Z II 3.3V 256Kx32/36 synchronous burst SRAM with ZBT1 Features • • • • • • • • • • M ultiple packaging options - Economical 100-pin TQFP package - Chip-scale fBGA package for smallest footprint

Contextual Info: A Advance information •■ Il AS7C3256K36P AS7C3256K32P 3.3V 256Kx32/36 pipeline burst synchronous SRAM Features • Organization: 262,144 words x 32 or 36 bits • Fast clock speeds to 166 MHz in LVTTL/LVCMOS • Fast clock to data access: 3 .5 /3 .8 /4 /5 ns

AS7C3256PFS18A

Abstract: TMS320C6X AS7C3256PFD16A AS7C3256PFD18A AS7C3256PFS16A A201D
Contextual Info: April 2000 Advance information AS7C3256PFS16A AS7C3256PFS18A 3.3V 256K x 16/18 pipeline burst synchronous SRAM • Organization: 262,144 words × 16 or 18 bits • Fast clock speeds to 166 MHz in LVTTL/LVCMOS • Fast clock to data access: 3.5/3.8/4/5 ns

ADA17

Contextual Info: Advance information •■ I l AS7C3256K36Z AS7C3256K32Z A 3.3V 2 5 6 K x 32/36 synchronous burst SRAM with ZBT1 Features Multiple packaging options - Economical 100-pin TQFP package - Chip-scale fBGA package for smallest footprint Byte write enables Qock enable for operation hold

Contextual Info: AS7C3256 3.1V 32Kx8 CMOS SRAM Features •O iganization: 32,7 68 w o ris x 8 b i s • Singie 3 3 ± 0 3V pow e r sappiy • H igh qpesd - 1 2 / 1 5 / 2 0 nsaddiess access tin e - 3 / 4 / 5 ns output enable access tin e •Veiy low pow e r consjm ption -Active: 198 mW max, 12 ns cycle

Contextual Info: AS7C3256 3.3V 32Kx8 CMOS SRAM Features • Easy memory expansion with CE and OE inputs • TTL-compatible, three-state I/O • Ideal for cache, modem, portable computing - 75% power reduction during CPU idle mode • 28-pin JEDEC standard packages - 300 mil PDIP commercial

AS7C256-20JC

Abstract: AS7C256-15PC AS7C256-12JC AS7C3256-12JC AS7C3256-20JC AS7C256 AS7C256-12 AS7C256-12PC AS7C256-15 AS7C256-20
Contextual Info: 129 0%(5#4<<<# $6:&589 $6:&6589 8926169#65.ð;#&026#65$0#+&RPPRQ#,22, HDWXUHV • Very low power consumption: STANDBY - 22 mW (AS7C256) / max CMOS I/O - 7.2 mW (AS7C3256) / max CMOS I/O • 2.0V data retention • Easy memory expansion with CE and OE inputs

AS7C256A-15JI

Abstract: AS7C256A AS7C3256A
Contextual Info: March 2001 Advance Information AS7C256A AS7C3256A 5V/3.3V 32K X 8 CMOS SRAM Common I/O Features • Very low power consumption: STANDBY - 11 mW (AS7C256A) / max CMOS I/O - 3.6 mW (AS7C3256A) / max CMOS I/O • AS7C256A (5V version) • AS7C3256A (3.3V version)

Contextual Info: Il High Perform ance 32Kx8 CMOS SRAM AS7C3256 3.3V 32K x8 C M O S SR A M C o m m o n I/O I F E A T U R E S _ • Single 3.3V + 0.3V Power Supply • 2.0V Data Retention • Organization: 32,768 words x 8 bits • TTL compatible I/O

Contextual Info: AS7C3256 3.3V 32Kx8 CMOS SRAM Features • Organization: 32,768 words x 8 bits • Single 3.3 ± 0.3V power supply • High speed - 1 0 /1 2 /1 5 /2 0 ns address access time - 3 / 3 / 4 / 5 ns output enable access time • Very low power consumption - Active: 198 mW max, 12 ns cycle

AS7C256-15PC

Abstract: AS7C256-20JC AS7C256 AS7C3256 as7c256-15ji as7c256-12ji
Contextual Info: September 2001 AS7C256 AS7C3256 5V/3.3V 32K X 8 CMOS SRAM Common I/O Features • Very low power consumption: STANDBY • AS7C256 (5V version) • AS7C3256 (3.3V version) • Industrial and commercial temperature • Organization: 32,768 words x 8 bits

did a2 198

Abstract: AS7C3256-15PC
Contextual Info: AS7C3256 3.3V 32Kx8 CMOS SRAM Features • Easy memory expansion with CE and OE inputs • TTL-compatible, three-state I/O • Ideal for cache, modem, portable computing - 75% power reduction during CPU idle mode • 28-pin JEDEC standard packages - 300 mil PDIP commercial

AS7C256A-15JI

Abstract: AS7C256A-20TI
Contextual Info: May 2001 Advance Information AS7C256A AS7C3256A 5V/3.3V 32K X 8 CMOS SRAM Common I/O Features • Very low power consumption: STANDBY - 11 mW (AS7C256A) / max CMOS I/O - 3.6 mW (AS7C3256A) / max CMOS I/O • AS7C256A (5V version) • AS7C3256A (3.3V version)

AS7C3256A

Abstract: AS7C3256A-12JC AS7C3256A-10JC AS7C3256A-10JI AS7C3256A-10TC AS7C3256A-10TI AS7C3256A-12JI AS7C3256A-12TC AS7C3256A-12TI AS7C3256
Contextual Info: April 2004 AS7C3256A 3.3V 32K X 8 CMOS SRAM Common I/O Features • TTL-compatible, three-state I/O • 28-pin JEDEC standard packages - 300 mil SOJ - 8 x 13.4 mm TSOP 1 • ESD protection ≥ 2000 volts • Latch-up current ≥ 200 mA • • • •

Contextual Info: OCTOBER ì 999 AS7C3256 5V /3 ,3V 3 2 K x B CMOS SRAM [Com m on I/O Features • A S7C 256 5V v ersio n ) V ery lo w p o w e r c o n s u m p tio n : STANDBY • A S 7C 3256 (3.3V v ersio n ) - 11 m W (A S7C 256) / m a x CMOS I / O • In d u stria l a n d c o m m e rc ia l te m p e ra tu re

Contextual Info: A Advance information •■ I l AS7C3256K36Z AS7C3256K32Z 3.3V 256Kx32/36 synchronous burst SRAM with NTD Features • • • • • • • • • Multiple packaging options - Economical 100-pin TQFP package - Chip-scale fBGA package for smallest footprint

soj 36

Abstract: AS6C4008 AS6C4016 TSOP II 44 AS7C34096A AS6C62256 AS7C1025C AS7C256A AS6C6264 AS7C31024B
Contextual Info: Ver. 4 Aug 29 , 2008 3.3V Fast Asynchronus SRAMs Alliance Part Number Density/ Organization Vcc(V) Speed (ns) Operating Temperature Operating Current (mA) Standby Current (mA) AS7C3256A 256K (32K x 8) 3.3V 10/12/15/20 Industrial (-40C to 85C) Commercial temp (0C to 70C)

32kx8 sram

Contextual Info: High Performance 32KX8 3.3V CMOS SRAM « II AS7C32S6 AS7C3256L « Low voltage 32Kx8 CMOS SRAM Features • O rganization: 3 2 ,7 6 8 w o rd s x 8 bits • Equal access and cycle tim es • Single 3 .3 ± 0.3V p o w e r su pp ly • Easy m em o ry ex p a n sio n w ith CE and OE in pu ts

Contextual Info: March 2001 AS7C256 AS7C3256 5V/3.3V 32K X 8 CMOS SRAM Common I/O Features • Very low power consumption: STANDBY • AS7C256 (5V version) • AS7C3256 (3.3V version) • Industrial and commercial temperature • Organization: 262,144 words x 16 bits

Contextual Info: Hi gh p e r f o r m a n c e 4 M b s y nc hr on ou s CMOS SRAM AS7C3256KJ6P AS7C3256K18P H '> _ 2 5 6 X X 1 6 / 18 p ip e lin e b u rst synchronous SR A M Advance information Features • O r g a n iz a tio n : 2 6 2 , 1 4 4 w o r d s