E6327 APPLICATION Search Results

deviation sheet

Contextual Info: BFP620 Deviation Sheet E6327 vs. E7764 NPN Silicon Germanium RF Transistor 3
High gain low noise RF transistor 4
Provides outstanding performance for a wide range of wireless applications
Ideal for CDMA and WLAN applications 2
Outstanding noise figure F = 0.7 dB at 1.8 GHz

deviation sheet

Abstract: BFP620 acs BFP620 applications note
Contextual Info: BFP620 Deviation Sheet E6327 vs. E7764 and L7764 NPN Silicon Germanium RF Transistor 3
High gain low noise RF transistor 4
Provides outstanding performance for a wide range of wireless applications
Ideal for CDMA and WLAN applications 2
Outstanding noise figure F = 0.7 dB at 1.8 GHz

BAS16

Abstract: BAS1602W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16-07L4 BAS16S BAS16U BAS16W
Contextual Info: BAS16. Silicon Switching Diode • For high-speed switching applications BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U 6 3 4 5 D 1 1 1 4 D 2 3 D 3 D 1 2 1 2 Type BAS16 BAS16-02L* BAS16-02V BAS16-02W BAS16-03W BAS16-07L4* BAS16S BAS16U

E6327

Abstract: marking code a4s DIN 6784 SOt323 marking code 6X BAV70F BAV70L3 BAV70 E6327 BAV70T BAV70U SC74
Contextual Info: BAV70. Silicon Switching Diode • For high-speed switching applications • Common cathode configuration BAV70 BAV70F BAV70L3 BAV70T BAV70W BAV70S BAV70U 6 3 4 5 D 3 D 2 D 1 D 1 1 D 4 2 Type BAV70 BAV70F* BAV70L3 * BAV70S BAV70T BAV70U BAV70W 1 D 2 2 3

DIN 6784

Abstract: free pdf transistor a7s a7s marking code marking 2U diode E6327 marking 2U 20 diode application circuit bav99 E6433 A7s SOT23 marking 2U 95 diode
Contextual Info: BAV99. Silicon Switching Diode • For high-speed switching applications • Series pair configuration BAV99 BAV99F BAV99T BAV99W BAV99S BAV99U 6 3 4 5 D 3 D 1 D 1 1 D 4 D 2 2 1 D 2 2 3 Type Package Configuration Marking BAV99 BAV99F* BAV99S BAV99T BAV99U

A1s sot23

Abstract: BAW56S E6327 MARKING CODE A1s
Contextual Info: BAW56. Silicon Switching Diode • For high-speed switching applications • Common anode configuration BAW56 BAW56T BAW56W BAW56S BAW56U 6 3 4 5 D 3 D 1 D 1 1 D 4 D 2 2 Type BAW56 BAW56S BAW56T BAW56U BAW56W 1 D 2 2 3 Package SOT23 SOT363 SC75 SC74 SOT323

E6327

Abstract: SCD80 BB857 d bb833 E7908 BB857 BB831 BB689 BB664 BB555E7902 BB833 V2 3N DIODE BB857E7908
Contextual Info: A p p l i c a t i o n N o t e , V 2. 1, F e b . 2 00 8 A p p li c a t i o n N o t e N o . 0 4 7 M a t c h i ng M e th o d s f o r V a r i ab l e C a p a c i t an c e Diodes R F & P r o t e c ti o n D e v i c e s Edition 2008-02-14 Published by Infineon Technologies AG,

66s marking

Abstract: sot323 marking code A.C BAT 62 E6327
Contextual Info: BAT64. Silicon Schottky Diodes • For low-loss, fast-recovery, meter protection, bias isolation and clamping application • Integrated diffused guard ring • Low forward voltage BAT64 BAT64-02V BAT64-02W BAT64-04 BAT64-04T BAT64-04W ! BAT64-05 BAT64-05W

BAR88

Abstract: BAR88-02V BAR88-07LRH BAR88-02L BAR88-02LRH BAR88-07L4 BAR88-098LRH BAR88-099L4 BAR88-099LRH SC79
Contextual Info: BAR88. Silicon PIN Diode • Optimized for low current antenna switches in hand held applications • Very low forward resistance typ. 1.5 Ω @ IF = 1 mA • Low capacitance at zero volt reverse bias at frequencies above 1 GHz (typ. 0.28 pF) • Very low signal distortion

DIN 6784

Abstract: SOt323 marking code 6X
Contextual Info: BAT68. Silicon Schottky Diodes • For mixer applications in the VHF / UHF range • For high-speed switching applications BAT68 BAT68-04 BAT68-04W ! ! ,   BAT68-06 BAT68-06W BAT68-07W ! ,  ,  "  $ ! ,  , BAT68-08S " # ,  , ,   , ! ! ESD: Electrostatic discharge sensitive device, observe handling precaution!

TSLP

Abstract: BAR90 BAR90-02L BAR90-02LRH BAR90-07L4 BAR90-07LRH BAR90-098LRH BAR90-099L4 BAR90-099LRH TSLP 8
Contextual Info: BAR90. Silicon Deep Trench PIN Diodes • Optimized for low bias current antenna switches in hand held applications • Very low capacitance at zero volt reverse bias at frequencies above 1GHz typ. 0.19pF • Low forward resistance (typ. 1.3Ω @ IF = 3mA)

H6327

Abstract: E6327 PG-SCD80-2-1 UM-38 BB 555-02V E7912 BBY57-05W DIODE Sp marking code H7902 cu marking code diode SP000745054
Contextual Info: BBY57. Silicon Tuning Diode • Excellent linearity • High Q hyperabrupt tuning diode • Low series resistance • High capacitance ratio • Designed for low tuning voltage operation for VCO's in mobile communications equipment • For control elements such as TCXOs and VCXOs

Diode mark 1445

Contextual Info: BAT15. Silicon Schottky Diodes • Low barrier type for DBS mixer applications up to 12 GHz, phase detectors and modulators • Low noise figure BAT15-02LRH BAT15-03W BAT15-04W BAT15-05W 3 1 2 BAT15-07LRH D 1 D 2 D 1 1 2 1 D 1 1 D 3 2 D 2 D 4 2 3 D 2 D 1

Contextual Info: BA592/BA892. Silicon RF Switching Diode
For band switching in TV/VTR tuners and mobile applications
Very low forward resistance typ. 0.45  @ 3 mA
small capacitance BA592 BA892/-02L BA892-02V 1 2 Type BA592 BA892 BA892-02L BA892-02V Package SOD323

BAT15

Abstract: BAT15-02LRH BAT15-03W BAT15-04W BAT15-05W BAT15-099 BAT15-099LRH BAT15-099R
Contextual Info: BAT15. Silicon Schottky Diodes • Low barrier type for DBS mixer applications up to 12 GHz, phase detectors and modulators • Low noise figure BAT15-02LRH BAT15-03W BAT15-04W BAT15-05W 3 1 2 BAT15-07LRH D 1 D 2 D 1 1 2 1 D 1 1 D 3 2 D 2 D 4 2 3 D 2 D 1

BAT64-04 E6327

Contextual Info: BAT64.B5000 / B5003 Silicon Schottky Diodes • For low-loss, fast-recovery, meter protection, bias isolation and clamping application • Integrated diffused guard ring • Low forward voltage • Improved operating temperature range due to extra-low thermal resistance

BAT54

Contextual Info: BAT54.B5000 / B5003 Silicon Schottky Diodes • For low-loss, fast-recovery, meter protection, bias isolation and clamping application • Guard ring protected • Low forward voltage • Improved operating temperature range due to extra-low thermal resistance

E6327

Abstract: BBY59-02V cross BB857 BB831 BB689 BB664 V2 3N DIODE
Contextual Info: BB837/BB857. Silicon Tuning Diode • For SAT tuners • High capacitance ratio • Low series resistance • Excellent uniformity and matching due to "in-line" matching assembly procedure • Pb-free RoHS compliant package 1) • Qualified according AEC Q101

BAS21

Abstract: BAS21-03W BAS21U BCW66H E6327 SC74 bas21 infineon DIN6784 BAS21 SOD323 JSs sot23
Contextual Info: BAS21. Silicon Switching Diode
For high-speed switching applications
High breakdown voltage BAS21 BAS21-03W BAS21U 6 3 4 5 D 1 1 1 D 2 D 3 2 1 2 2 3 Type Package Configuration Marking BAS21 BAS21U BAS21-03W SOT23 SC74 SOD323 single parallel triple single

DIN 6784

Contextual Info: BAT17. Silicon Schottky Diode • For mixer applications in VHF/UHF range • For high-speed switching application BAT17 BAT17-04 BAT17-04W 3 1 BAT17-05 BAT17-05W 3 2 BAT17-06W 3 D 1 D 2 D 1 1 2 1 BAT17-07 3 D 2 2 4 D 1 D 2 1 2 3 D 1 1 D 2 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!

sot323 marking code A.C

Contextual Info: BAT17. Silicon Schottky Diode • For mixer applications in VHF/UHF range • For high-speed switching application BAT17 BAT17-04 BAT17-04W 3 1 BAT17-05 BAT17-05W 3 2 BAT17-06W 3 D 1 D 2 D 1 1 2 1 BAT17-07 3 D 2 2 4 D 1 D 2 1 2 3 D 1 1 D 2 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BA595 E6327

Abstract: marking code TS
Contextual Info: BA595/BA885/BA895. Silicon PIN Diode • Current-controlled RF resistor for switching and attenuating applications • Frequency range 1 MHz . 2 GHz • Especially useful as antenna switch in TV-sat tuners • Very low harmonics BA595 BA895 BA885 3 1 2

BAR65

Contextual Info: BAR65. Silicon PIN Diode • Series diode for mobile communication in low loss transmit-receiver switches • Band switch for TV-tuners • Very low forward resistance typ. 0.65 Ω @ 5 mA • Low capacitance (typ. 0.5 pF @ 0V) • Fast switching applications

DIN 6784

Abstract: marking code TS Diode Mark sot23 4x marking code 76s BAS170W BAS70-02L BAS70-02W BAS70-04S MARKING 74s marking 77s
Contextual Info: BAS70. / BAS170W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04 BAS70-04W 3 BAS70-04S 6 3 4 5 D 3 1 2 D 1