BAR90 Search Results

BAR90-081LS

Abstract: marking WM BAR90
Contextual Info: BAR90-081LS Silicon Trench PIN Diode Array • Optimized for low bias current antenna switches in hand held applications • Very low capacitance at zero volt reverse bias at frequencies above 1GHz typ. 0.19 pF • Low forward resistance (typ. 1.3 Ω @ IF = 3 mA)

Contextual Info: BAR90. Silicon Deep Trench PIN Diodes • Optimized for low bias current antenna switches in hand held applications • Very low capacitance at zero volt reverse bias at frequencies above 1GHz typ. 0.19 pF • Low forward resistance (typ. 1.3 Ω @ I F = 3 mA)

Contextual Info: BAR90. Silicon Deep Trench PIN Diodes • Optimized for low bias current antenna switches in hand held applications • Very low capacitance at zero volt reverse bias at frequencies above 1GHz typ. 0.19 pF • Low forward resistance (typ. 1.3 Ω @ IF = 3 mA)

BAR90-02EL

Contextual Info: BAR90. Silicon Deep Trench PIN Diodes • Optimized for low bias current antenna switches in hand held applications • Very low capacitance at zero volt reverse bias at frequencies above 1GHz typ. 0.19 pF • Low forward resistance (typ. 1.3 Ω @ I F = 3 mA)

BAR90-07LRH

Abstract: BAR90 BAR90-02LRH BAR90-02LS BAR90-098LRH BAR90-099LRH
Contextual Info: BAR90. Silicon Deep Trench PIN Diodes • Optimized for low bias current antenna switches in hand held applications • Very low capacitance at zero volt reverse bias at frequencies above 1GHz typ. 0.19 pF • Low forward resistance (typ. 1.3 Ω @ IF = 3 mA)

TSLP

Abstract: BAR90 BAR90-02L BAR90-02LRH BAR90-07L4 BAR90-07LRH BAR90-098LRH BAR90-099L4 BAR90-099LRH TSLP 8
Contextual Info: BAR90. Silicon Deep Trench PIN Diodes • Optimized for low bias current antenna switches in hand held applications • Very low capacitance at zero volt reverse bias at frequencies above 1GHz typ. 0.19pF • Low forward resistance (typ. 1.3Ω @ IF = 3mA)

Contextual Info: BAR90. Silicon Deep Trench PIN Diodes • Optimized for low bias current antenna switches in hand held applications • Very low capacitance at zero volt reverse bias at frequencies above 1GHz typ. 0.19 pF • Low forward resistance (typ. 1.3 Ω @ I F = 3 mA)

BAR90-099LRH

Abstract: BAR90 BAR90-02L BAR90-02LRH BAR90-07L4 BAR90-07LRH BAR90-099L4 TSLP 8
Contextual Info: BAR90. Silicon Deep Trench PIN Diodes • Optimized for low bias current antenna switches in hand held applications • Very low capacitance at zero volt reverse bias at frequencies above 1GHz typ. 0.19pF • Low forward resistance (typ. 1.3Ω @ IF = 3mA)

TSLP

Abstract: BAR90-099LRH BAR90-098LRH BAR90 BAR90-02L BAR90-02LRH BAR90-07L4 BAR90-07LRH BAR90-099L4
Contextual Info: BAR90. Silicon Deep Trench PIN Diodes • Optimized for low bias current antenna switches in hand held applications • Very low capacitance at zero volt reverse bias at frequencies above 1GHz typ. 0.19pF • Low forward resistance (typ. 1.3Ω @ IF = 3mA)

Contextual Info: BAR90. Silicon Deep Trench PIN Diodes • Optimized for low bias current antenna switches in hand held applications • Very low capacitance at zero volt reverse bias at frequencies above 1GHz typ. 0.19 pF • Low forward resistance (typ. 1.3 Ω @ IF = 3 mA)

BAR90

Abstract: BAR90-02LRH BAR90-02LS BAR90-07LRH BAR90-098LRH TSLP-2-7
Contextual Info: BAR90. Silicon Deep Trench PIN Diodes • Optimized for low bias current antenna switches in hand held applications • Very low capacitance at zero volt reverse bias at frequencies above 1GHz typ. 0.19 pF • Low forward resistance (typ. 1.3 Ω @ IF = 3 mA)

BAR90-07LRH

Abstract: BAR90-02LRH BAR90-02LS transistor marking pr 04 BAR90 BAR90-098LRH BAR90-099LRH TSLP-2-7 bar90-099
Contextual Info: BAR90. Silicon Deep Trench PIN Diodes • Optimized for low bias current antenna switches in hand held applications • Very low capacitance at zero volt reverse bias at frequencies above 1GHz typ. 0.19 pF • Low forward resistance (typ. 1.3 Ω @ IF = 3 mA)

Contextual Info: BAR90. Silicon Deep Trench PIN Diodes • Optimized for low bias current antenna switches in hand held applications • Very low capacitance at zero volt reverse bias at frequencies above 1GHz typ. 0.19 pF • Low forward resistance (typ. 1.3 Ω @ I F = 3 mA)

BAS16

Abstract: BAS1602W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16-07L4 BAS16S BAS16U BAS16W
Contextual Info: BAS16. Silicon Switching Diode • For high-speed switching applications BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U 6 3 4 5 D 1 1 1 4 D 2 3 D 3 D 1 2 1 2 Type BAS16 BAS16-02L* BAS16-02V BAS16-02W BAS16-03W BAS16-07L4* BAS16S BAS16U

BAT15-02LRH

Abstract: BAT15-04W BAT15 BAT15-03W BAT15-05W BAT15-099 BAT15-099LRH BAT15-099R RF schottky diode
Contextual Info: BAT15. Silicon Schottky Diodes • Low barrier type for DBS mixer applications up to 12 GHz, phase detectors and modulators • Low noise figure • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAT15-02LRH BAT15-03W BAT15-04W BAT15-05W

ESD0P2RF-02LS

Abstract: ESD0P2RF-02LRH BAR90-02LRH IEC61000-4-4 C125T-A
Contextual Info: ESD0P2RF. Bi-directional Ultra Low Capacitance TVS Diode • ESD / transient protection of RF signal lines according to: IEC61000-4-2 ESD : ±20kV (contact) IEC61000-4-4 (EFT): 40 A (5 / 50 ns) IEC61000-4-5 (Surge): 3 A (8 / 20 µs) • Extremely small form factor down to

bat62-03w

Abstract: BAT62 BAT62-02L BAT62-02W BAT62-07L4 BAT62-07W BAT62-09S SCD80
Contextual Info: BAT62. Silicon Schottky Diode • Low barrier diode for detectors up to GHz frequencies • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAT62 " BAT62-02W BAT62-03W BAT62-07W ! ,  " BAT62-09S $ ! ,    , ,  , 1   " # , BAT62-02L

BAR88-07LRH

Abstract: BAR88-099LRH BAR88 BAR88-02LRH BAR88-02V BAR88-098LRH SC79 TSLP
Contextual Info: BAR88. Silicon PIN Diode • Optimized for low current antenna switches in hand held applications • Very low forward resistance typ. 1.5 Ω @ I F = 1 mA • Low capacitance at zero volt reverse bias at frequencies above 1 GHz (typ. 0.28 pF) • Very low signal distortion

Contextual Info: BAS4002S-02LRH Low VF Schottky Diode • Reverse voltage: 40 V • Forward current: 0.2 A • Low forward voltage and smallest package form factor 1.0 x 0.6 x < 0.4 mm for mobile phone battery charger application • Pb-free (RoHS compliant) package BAS4002S-02LRH

Contextual Info: ESD0P4RFL RF ESD Protection Diodes • ESD protection of RF antenna / interfaces or ultra high speed data lines acc. to: IEC61000-4-2 ESD : ± 15 KV (air / contact) IEC61000-4-4 (EPT): 40 A (5/50 ns) IEC61000-4-5 (surge): 5 A (8/20 µs) • Very low line capacitance: 0.4 pF @ 1 GHz

MARKING E4 "Pin Diode"

Contextual Info: ESD0P4RFL RF ESD Protection Diodes • ESD protection of RF antenna / interfaces or ultra high speed data lines acc. to: IEC61000-4-2 ESD : ± 15 KV (air / contact) IEC61000-4-4 (EPT): 40 A (5/50 ns) IEC61000-4-5 (surge): 5 A (8/20 µs) • Very low line capacitance: 0.4 pF @ 1 GHz

marking 5B

Contextual Info: BAS3005B. Medium Power AF Schottky Diode • Forward current: 0.5 A • Reverse voltage: 30 V • Low capacitance, low reverse current • For high efficiency DC/DC conversion, fast switching, protecting and clamping applications • Pb-free RoHS compliant package

Contextual Info: BAR89. Silicon PIN Diode • Optimized for antenna switches in hand held applications • Very low capacitance at zero volts reverse bias at frequencies above 1GHz typ. 0.19 pF • Low forward resistance (typ. 0.8Ω @ IF = 10mA) • Very low signal distortion

DIN 6784

Abstract: marking code TS Diode Mark sot23 4x marking code 76s BAS170W BAS70-02L BAS70-02W BAS70-04S MARKING 74s marking 77s
Contextual Info: BAS70. / BAS170W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04 BAS70-04W 3 BAS70-04S 6 3 4 5 D 3 1 2 D 1