BAT15 Search Results

SOT143 DUAL DIODE

Abstract: S11 SCHOTTKY diode BAT15-099 VPS05178
Contextual Info: BAT15-099 Silicon Dual Schottky Diode
DBS mixer applications up to 12 GHz 3
Low noise figure
Low barrier type 4 2 1 4 VPS05178 1 3 2 EHA07011 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BAT15-099 S5s Pin Configuration

BAT15-05W

Abstract: VSO05561 noise diode
Contextual Info: BAT15-05W Silicon Schottky Diode
DBS mixer applications up to 12 GHz 3
Low noise figure
Low barrier type 2 1 VSO05561 BAT 15-05W C1/C2 3 1 2 A1 A2 EHA07179 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BAT15-05W

BAT15-02LRH

Abstract: BAT15-04W BAT15 BAT15-03W BAT15-05W BAT15-099 BAT15-099LRH BAT15-099R RF schottky diode
Contextual Info: BAT15. Silicon Schottky Diodes • Low barrier type for DBS mixer applications up to 12 GHz, phase detectors and modulators • Low noise figure • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAT15-02LRH BAT15-03W BAT15-04W BAT15-05W

Contextual Info: BAT15. Silicon Schottky Diodes • Low barrier type for DBS mixer applications up to 12 GHz, phase detectors and modulators • Low noise figure • Also available in TSSLP-2-1 for Application up to 24 GHz BAT15-02LRH BAT15-03W BAT15-04W BAT15-05W !  , 

Diode mark 1445

Contextual Info: BAT15. Silicon Schottky Diodes • Low barrier type for DBS mixer applications up to 12 GHz, phase detectors and modulators • Low noise figure BAT15-02LRH BAT15-03W BAT15-04W BAT15-05W 3 1 2 BAT15-07LRH D 1 D 2 D 1 1 2 1 D 1 1 D 3 2 D 2 D 4 2 3 D 2 D 1

bat15

Abstract: BAT15-02V
Contextual Info: BAT15. Silicon Schottky Diodes • Low barrier type for DBS mixer applications up to 12 GHz, phase detectors and modulators • Low noise figure BAT15-02LRH BAT15-02V BAT15-03W BAT15-04W BAT15-05W !  ,  BAT15-099 " ! ,  ,  " ! ,  , BAT15-099R , , 

Contextual Info: BAT15-036 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandS Test Freq4.0G Frequency Min. (Hz)2.0G Frequency Max. (Hz)4.0G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)5.5

Contextual Info: BAT15-022R Diodes General Purpose UHF/MW Detector Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandS Test Freq9.4G Frequency Min. (Hz)0 Frequency Max. (Hz)4.0G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. Minimum Figure of Merit @Power Level (test) (W)

DIODE schottky 0.2v

Contextual Info: BAT15V-02V VISHAY Vishay Semiconductors RF Small Signal Schottky Diode Description Designed for RF-signal level detection and RF-mixer application the low barrier Schottky Diode BAT15V02V can be used in wireless and mobile systems up to 12 GHz. The small space saving SOD-523 package is a contribution to the continuously growing integration density on the PCB and the increasing quality standards.

Contextual Info: Product specification BAT15-03W SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm +0.1 1.3-0.1 Features DBC mixer applications to 12 GHz +0.1 2.6-0.1 1.0max Low noise figure Low barrier type 0.375 +0.05 0.1-0.02 0.475 Absolute Maximum Ratings Ta = 25

bat15

Abstract: BAT15-03W
Contextual Info: BAT15-03W Silicon Schottky Diode
DBS mixer applications up to 12 GHz 2
Low noise figure 1
Low barrier type VPS05176 1 2 EHA07001 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BAT15-03W

4C3 diode

Abstract: Schottky Diode Marking C3 A4 marking diode VPS05178 BAT15-099R diode marking a4 diode MARKING A3
Contextual Info: BAT15-099R Silicon Crossover Ring Quad Schottky Diode 3
Low barrier diode for double balance mixers, phase detectors and modulators 4 2 4 1 3 1 VPS05178 2 EHA07012 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BAT15-099R

BAT15

Abstract: BAT15-02LRH BAT15-03W BAT15-04W BAT15-05W BAT15-099 BAT15-099LRH BAT15-099R
Contextual Info: BAT15. Silicon Schottky Diodes • Low barrier type for DBS mixer applications up to 12 GHz, phase detectors and modulators • Low noise figure BAT15-02LRH BAT15-03W BAT15-04W BAT15-05W 3 1 2 BAT15-07LRH D 1 D 2 D 1 1 2 1 D 1 1 D 3 2 D 2 D 4 2 3 D 2 D 1

Contextual Info: BAT15-052R Diodes General Purpose UHF/MW Detector Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandX Test Freq9.4G Frequency Min. (Hz)0 Frequency Max. (Hz)8.0G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. Minimum Figure of Merit @Power Level (test) (W)

BAT15-04W

Abstract: VSO05561 S8s marking
Contextual Info: BAT15-04W Silicon Schottky Diode Preliminary data 3
DBS mixer applications up to 12 GHz
Low noise figure
Low barrier type 2 1 VSO05561 C1/A2 3 1 2 A1 C2 EHA07181 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

smd diode bat15

Abstract: BAT15-03W
Contextual Info: Diodes SMD Type Silicon Schottky diode BAT15-03W SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm +0.1 1.3-0.1 Features DBC mixer applications to 12 GHz +0.1 2.6-0.1 1.0max Low noise figure Low barrier type 0.375 +0.05 0.1-0.02 0.475 Absolute Maximum Ratings Ta = 25

Q62702-A118

Contextual Info: SIEMENS HiRel Silicon Schottky Diode BAT 15 Features • HiRel Discrete and Microwave Semiconductor • Medium barrier diodes for detector and mixer applications • Hermetically sealed microwave package • qualified • ESA/SCC Detail Spec. No.: 5106/014

BF963

Abstract: 1N4004 SOD-123 BC547 smd BB409 2n2907 smd BAT16-046 1N4148 2N2907 SOT-23 1N4148 SOD-123 2n2222 smd
Contextual Info: Cross Reference Leaded Devices SMD-Packages SOD-123 1N4001 1N4002 1N4003 1N4004 1N4001 2x 1N4002 (2x) 1N4003 (2x) 1N4004 (2x) 1N4148 1N4148 (2x) SOD-323 SCD-80 SOT-23 SOT-323 SOT-343 SOT-363 SCT-595 BAW 78 M BAS 16-02W BAS 16-03W BAS16 BAL/BAR74 BAL/BAR99

siemens spc 2

Abstract: SIEMENS MICROWAVE RADIO SIEMENS MICROWAVE RADIO 8 GHz microwave transistor siemens MSC Microwave x-band mmic lna "Microwave Diodes" Microwave GaAs FET micro x MMIC Amplifier Micro-X marking D CFY67
Contextual Info: HiRel Discrete and HiRel Microwave Semiconductors 1. Preliminary Remarks This Paragraph gives an overview on the HiRel Small Signal Microwave Semiconductors available from Siemens. Full data sheets are also given in our HiRel Discrete and Microwave Semiconductors Data Book which is currently under generation August 1998 . They are

Attansic L1

Abstract: IT8511TE ALC660 bd3702 c5914 c5803 cd3102 asus attansic f1 C4422
Contextual Info: 5 Block Diagram 61 02 System Setting 62 C * 63 * 04_CPU-Merom HOST 64 ISA ROM 05 05_CPU-Merom(PWR) 65 SPI ROM * 66 07_CRESTLINE(HOST) 67 * 08 08_CRESTLINE(DMI & CFG) 68 DC & BAT IN 09 09_CRESTLINE(GRAPHIC) 69 * 10 10_CRESTLINE(DDR2) 70 Debug CONN. 11 11_CRESTLINE(PWR)

smd code book

Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Contextual Info: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ

4G lte RF Transceiver

Abstract: murata LTE saw filter UMTS band 1 SMA duplexer 4G LTE PA murata LTE duplexer band 20 HSPA modem LTE bandpass filter AN241 LTE rf front end LTE filter band 40
Contextual Info: B GA 735 N 16 B GA 735 N 16 fo r 3 G / HS P A/L T E Applic atio ns S uppo r ting Ban d s 1, 2 and 5 with R efe r ence Res i s tor Rr ef= 27 k Ω Applic atio n N ote A N 241 Revision: Rev. 1.0 2010-08-31 RF and P r otecti on D evic es Edition 2010-08-31 Published by

4G lte RF Transceiver

Abstract: lte RF Transceiver transceiver 4G LTE X-GOLD 618 murata WCDMA Band 8 duplexer murata LTE saw filter Taiyo Yuden Duplexer UMTS band 1 SMA duplexer BGA728L7 for3g
Contextual Info: BGA748N16 B G A 7 4 8 N 1 6 f o r 3 G / HS P A / L T E A ppl ic atio ns Suppo r t i ng B an d s I, II , V an d VI II with Reference Resistor Rref= 8.2 kΩ Application Note AN237 Revision: Rev. 1.0 2010-09-02 RF and Protecti on Devi c es Edition 2010-09-02

siemens diodes

Abstract: di_hit_hsr276_19930908 BB219 HSMS-286x hitachi part naming Motorola diodes hitachi naming convention 1SV186 BAT150 HSMS2815
Contextual Info: Vendor Component Libraries High-Frequency Diode Library December 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness