E153 Search Results

E153 Result Highlights (5)

Part	Manufacturer	Description	Download
GRM2195C1E153JA01J	Murata Manufacturing Co Ltd	Ceramic Capacitor, Multilayer, Ceramic, 25V, 5% +Tol, 5% -Tol, C0G, 30ppm/Cel TC, 0.015uF, Surface Mount, 2012M/0805	PDF
GRM155R71E153KA61J	Murata Manufacturing Co Ltd	Ceramic Capacitor, Ceramic, 25V, 10% +Tol, 10% -Tol, X7R, 15% TC, 0.015uF, Surface Mount, 1005M/0402	PDF
GRM216B11E153KA01D	Murata Manufacturing Co Ltd	Ceramic Capacitor, Multilayer, Ceramic, 25V, 10% +Tol, 10% -Tol, B, 10% TC, 0.015uF, Surface Mount, 2012M/0805	PDF
GRM31C7U2E153JW32L	Murata Manufacturing Co Ltd	Ceramic Capacitor, Ceramic, 250V, 5% +Tol, 5% -Tol, U2J, -750+/-120ppm/Cel TC, 0.015uF, Surface Mount, 3216M/1206	PDF
GRM188R11E153MA01D	Murata Manufacturing Co Ltd	Ceramic Capacitor, Ceramic, 25V, 20% +Tol, 20% -Tol, R, 15% TC, 0.015uF, Surface Mount, 1608M/0603	PDF

E153 Datasheets (18)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
E-153	Semitec	Current regulative diode	Original	PDF	796.44KB	44
E-153	International Semiconductor	DIODE CURRENT REG. 25V 18MA 2DO-35	Scan	PDF	119.31KB	1
E-153	Unknown	The Diode Data Book with Package Outlines 1993	Scan	PDF	103KB	2
E15-30	Fran Mar International	Input voltage 36-72 VDCoutput voltage 3.3 VDCoutput current:150/3000 mAinput current 15 mA/271 mA 15 W wide input DC to DC converter	Scan	PDF	44.18KB	1
E15-31	Fran Mar International	Input voltage 36-72 VDCoutput voltage 5 VDCoutput current:150/3000 mAinput current 15 mA/391 mA 15 W wide input DC to DC converter	Scan	PDF	44.18KB	1
E15-32	Fran Mar International	Input voltage 36-72 VDCoutput voltage 12 VDCoutput current:65/1250 mAinput current 15 mA/377 mA 15 W wide input DC to DC converter	Scan	PDF	44.18KB	1
E1532S.38.03	General Cable	Multiple Conductor Cables, Cables, Wires, 2C/12 SBC UNSH TYPE FPLR	Original	PDF		259
E1532S.41.03	General Cable	Multiple Conductor Cables, Cables, Wires, CABLE 2COND 12AWG UNSHIELD 1000'	Original	PDF		259
E1532S.44.03	General Cable	Multiple Conductor Cables, Cables, Wires, 2C/12 SBC UNSH TYPE FPLR	Original	PDF		259
E1532S.46.03	General Cable	Multiple Conductor Cables, Cables, Wires, 2C/12 SBC UNSH TYPE FPLR	Original	PDF		259
E15-33	Fran Mar International	Input voltage 36-72 VDCoutput voltage 15 VDCoutput current:50/1000 mAinput current 15 mA/377 mA 15 W wide input DC to DC converter	Scan	PDF	44.18KB	1
E15-34	Fran Mar International	Input voltage 36-72 VDCoutput voltage Â±5 VDCoutput current:Â±75/Â±1500 mAinput current 20 mA/381 mA 15 W wide input DC to DC converter	Scan	PDF	44.18KB	1
E1534S.38.03	General Cable	Multiple Conductor Cables, Cables, Wires, 4C/12 SBC UNSH TYPE FPLR	Original	PDF		259
E1534S.41.03	General Cable	Multiple Conductor Cables, Cables, Wires, 4C/12 SBC UNSH TYPE FPLR	Original	PDF		259

E15-35	Fran Mar International	Input voltage 36-72 VDCoutput voltage Â±12 VDCoutput current:Â±35/Â±625 mAinput current 20 mA/377 mA 15 W wide input DC to DC converter	Scan	PDF	44.18KB	1
E15-36	Fran Mar International	Input voltage 36-72 VDCoutput voltage Â±15 VDCoutput current:Â±25/Â±500 mAinput current 20 mA/377 mA 15 W wide input DC to DC converter	Scan	PDF	44.18KB	1
E153C	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	73.86KB	1
E153D	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	73.86KB	1

E153 Price and Stock

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Samtec Inc FTE-153-01-G-DV-ES-A-TR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	FTE-153-01-G-DV-ES-A-TR					1 - 10 $18.17 100 $12.71 1000 $8.47 10000 $8.47	Buy Now
Samtec Inc FTE-153-02-G-DV-A-TR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	FTE-153-02-G-DV-A-TR					1 - 10 $17.11 100 $11.94 1000 $7.81 10000 $7.81	Buy Now
Samtec Inc FTE-153-03-G-DV-P-TR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	FTE-153-03-G-DV-P-TR					1 - 10 $17.05 100 $11.89 1000 $7.77 10000 $7.77	Buy Now
Samtec Inc FTE-153-03-G-DV-A-P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	FTE-153-03-G-DV-A-P					1 - 10 $17.32 100 $12.10 1000 $7.95 10000 $7.95	Buy Now
Carling Technologies STA1E1-53/HDW-ASSM STA1E153/HDWASSM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	STA1E1-53/HDW-ASSM					1 - 10 - 100 $13.27 1000 $13.27 10000 $13.27	Buy Now

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E153 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
35N120D1 Abstract: D-68623 IXER 35N120D1 Contextual Info: IXER 35N120D1 NPT3 IGBT with Diode IC25 = 50 A = 1200 V VCES VCE sat typ. = 2.2 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside* E G = Gate C = Collector E = Emitter *Patent pending Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C	Original	35n120d1 247tm e153432 d-68623 +1ixer 35n120d1	PDF
TO247AD Abstract: TO247AD package 40n60c CoolMOS Power Transistor ISOPLUS247 Contextual Info: IXKR 40N60C CoolMOS Power MOSFET in ISOPLUS247TM Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base VDSS ID25 RDS on 600 V 38 A Ω 70 mΩ D G Preliminary data S ISOPLUS 247TM E153432 MOSFET Conditions	Original	40n60c isoplus247tm 247tm e153432 +4to247ad to247ad package coolmos power transistor isoplus247	PDF
DSEC29 Abstract: DSEC 29 DSEC Contextual Info: HiPerFREDTM Epitaxial Diode DSEA 59-06BC DSEC 59-06BC = 2x30 A = 600 V = 35 ns IFAV VRRM trr ISOPLUS220TM Electrically Isolated Back Surface DSEA Preliminary Data Sheet VRSM VRRM V V 600 600 ISOPLUS220TM E153432 Type 1 DSEC 2 3 2 3 DSEA 59-06BC DSEC 59-06BC	Original	59-06bc isoplus220tm e153432 29-06b +4ds98817a dsec29 dsec 29 dsec	PDF
IXGN400N60B3 Contextual Info: Preliminary Technical Information IXGN400N60B3 GenX3TM 600V IGBT VCES = 600V IC25 = 430A VCE sat ≤ 1.40V Medium-Speed Low-Vsat PT IGBT for 5-40 kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600	Original	ixgn400n60b3 ot-227b e153432 ic110 +1400n60b3	PDF
Mosfet 75V 120A Abstract: Power Mosfet 75V 120A IXFN240N15T2 Contextual Info: Advance Technical Information IXFN240N15T2 GigaMOSTM TrenchT2 HiperFETTM Power MOSFET VDSS ID25 = = 150V 240A Ω 5.2mΩ 140ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S G Symbol Test Conditions	Original	ixfn240n15t2 140ns ot-227 e153432 +3240n15t2 mosfet 75v 120a power mosfet 75v 120a	PDF
IXFN520N075T2 Contextual Info: Preliminary Technical Information IXFN520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 75V 480A Ω 1.9mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S Symbol Test Conditions VDSS TJ = 25°C to 175°C	Original	ixfn520n075t2 ot-227 e153432 520n075t2	PDF
IXGN320N60A3 Contextual Info: IXGN320N60A3 GenX3TM 600V IGBT VCES = 600V IC25 = 320A VCE sat ≤ 1.25V Ultra-Low-Vsat PT IGBT for up to 5kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	ixgn320n60a3 ot-227b e153432 ic110 +2320n60a3 3-08-a	PDF
IXFN320N17T2 Abstract: ixfn320n 320N17T2 Contextual Info: Advance Technical Information IXFN320N17T2 GigaMOSTM TrenchT2 HiperFETTM Power MOSFET VDSS ID25 = = 170V 260A Ω 5.2mΩ 150ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S G Symbol Test Conditions	Original	ixfn320n17t2 150ns ot-227 e153432 +2320n17t2 ixfn320n	PDF
ixfn420n10t Abstract: 420N10T 420N1 MOSFET 60V 210A F420 IXFN SOT227 DS100199 123B16 Contextual Info: Advance Technical Information IXFN420N10T GigaMOSTM Trench HiperFETTM Power MOSFET VDSS ID25 = = 100V 420A Ω 2.3mΩ 140ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S G Symbol Test Conditions	Original	ixfn420n10t 140ns ot-227 e153432 +7420n10t 420n1 mosfet 60v 210a f420 ixfn sot227 ds100199 123b16	PDF
IXGN200N60B3 Abstract: 9V DC INPUT and gate ic 200N60B3 IGBT 100V 100A igbt 100a 150v SOT227B 123B16 Contextual Info: IXGN200N60B3 GenX3TM 600V IGBT VCES = 600V IC110 = 200A VCE sat ≤ 1.50V Medium-Speed Low-Vsat PT IGBT for 5-40kHz Switching SOT-227B, miniBLOC E153432 Ec Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	ixgn200n60b3 ic110 5-40khz ot-227b +8e153432 200n60b3 8-08-a 9v dc input and gate ic igbt 100v 100a igbt 100a 150v sot227b 123b16	PDF
IXGJ50N60C4D1 Abstract: G50N60 Contextual Info: Preliminary Technical Information High-Gain IGBT w/ Diode IXGJ50N60C4D1 VCES = 600V IC110 = 21A VCE sat ≤ 2.50V (Electrically Isolated Tab) High-Speed PT Trench IGBT ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C	Original	ixgj50n60c4d1 ic110 o-247tm e153432 +4if110 50n60c4 0-06-11-a g50n60	PDF
IXTN17N120L Contextual Info: Advance Technical Information Linear Power MOSFET With Extended FBSOA IXTN17N120L VDSS ID25 D N-Channel Enhancement Mode Avalanche Rated = 1200V = 17A Ω ≤ 990mΩ RDS on G S S miniBLOC, SOT-227 B (IXTN) E153432 Symbol Test Conditions VDSS TJ = 25°C to 150°C	Original	ixtn17n120l ot-227 e153432 17n120l	PDF
E1531A Contextual Info: PDFINFO H2 4 0 1 - 0 1 8-Channel Voltage Output SCP HP E1531A Technical Specifications ● ● ● ● Use with HP E1415A and HP E1419A 8-channel non-isolated voltage source Current limited to protect from short circuits Source ± 16 V at up to 5 mA output current	Original	e1531a e1415a e1419a 5966-2401e	PDF
Contextual Info: Preliminary Technical Information GenX3TM 600V IGBT IXGN120N60A3 IXGN120N60A3D1 VCES = 600V IC110 = 120A VCE sat ≤ 1.35V Ultra-low Vsat PT IGBTs for up to 5kHz switching D1 E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C	Original	ixgn120n60a3 ixgn120n60a3d1 ic110 ot-227b +3e153432 if110 2x61-06a	PDF

55N120D1 Contextual Info: IXDN 55N120 VCES = 1200 V = 100 A IXDN 55N120 D1 IC25 VCE sat typ = 2.3 V High Voltage IGBT with optional Diode C C Short Circuit SOA Capability Square RBSOA G E G E E IXDN 55N120 Preliminary Data E IXDN 55N120 D1 miniBLOC, SOT-227 B E153432 E Symbol Conditions	Original	55n120 ot-227 e153432 ixdn55n120 +2d-68623 55n120d1	PDF
Contextual Info: XPTTM 650V GenX4TM w/ Sonic Diode IXXN110N65B4H1 Extreme Light Punch Through IGBT for 10-30kHz Switching VCES = IC110 = VCE sat  tfi(typ) = 650V 110A 2.1V 85ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C	Original	ixxn110n65b4h1 10-30khz ic110 ot-227b +4e153432 if110 110n65b4h1 02-04-13-b	PDF
Contextual Info: Advance Technical Information IXFN520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 75V 455A Ω 1.65mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S Symbol Test Conditions VDSS TJ = 25°C to 175°C	Original	ixfn520n075t2 ot-227 e153432 520n075t2	PDF
E1406A Abstract: data acquisition and control system 82341C DAC1000 82341D E1421B E2120E pentium 66 Contextual Info: PDFINFO H8 6 4 1 - 0 1 HP DAC1000 Data Acquisition and Control System Technical Specifications ● ● ● ● ● ● Test system which combines VXI instrument modules HP E1419A Multifunctionplus with 32-channel analog input HP E1421B 6-slot mainframe HP E1531A 8-channel analog output	Original	dac1000 e1419a 32-channel e1421b +9e1531a e1533a 16-channel e1406a data acquisition and control system 82341c 82341d e2120e pentium 66	PDF
Contextual Info: PDFINFO H2 4 0 7 - 0 1 8-Bit Isolated Digital I/O SCP HP E1536A Technical Specifications ● ● ● ● Use with HP E1415A and HP E1419A 8 TTL input/output lines isolated to 56 Vdc Programmable threshold levels of 5 V, 12 V, 24 V, or 48 V Programmable debounce timer	Original	e1536a e1415a e1419a 5966-2407e	PDF
80N60 Contextual Info: Advance Technical Information IXFR80N60P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Rectifier = = ≤ ≤ 600V 48A Ω 76mΩ 250ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	ixfr80n60p3 250ns isoplus247 e153432 +280n60p3 80n60	PDF
IXFN44N80Q3 Contextual Info: Preliminary Technical Information IXFN44N80Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Rectifier Avalanche Rated = = ≤ ≤ 800V 37A Ω 190mΩ 300ns miniBLOC E153432 S Symbol Test Conditions Maximum Ratings	Original	ixfn44n80q3 300ns e153432 44n80q3	PDF
IXXN100N60B3H1 Contextual Info: Advance Technical Information IXXN100N60B3H1 XPTTM 600V GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 10-30kHz Switching = = ≤ = 600V 100A 1.80V 150ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C	Original	10-30khz ixxn100n60b3h1 150ns if110 +2100n60b3 12-01-11-b	PDF
Contextual Info: Advance Technical Information IXTJ6N150 High Voltage Power MOSFET VDSS ID25 = = 1500V 3A 3.85Ω RDS on ≤ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings	Original	ixtj6n150 o-247tm e153432 100ms +16n150	PDF
IXFN62N80Q3 Abstract: sot 123 Contextual Info: Advance Technical Information IXFN62N80Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr = = ≤ ≤ 800V 49A Ω 140mΩ 300ns N-Channel Enhancement Mode Fast Intrinsic Rectifier miniBLOC E153432 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	ixfn62n80q3 300ns e153432 62n80q3 +1sot 123	PDF

E153 Search Results

E153 Result Highlights (5)

E153 Datasheets (18)

E153 Price and Stock

Samtec Inc FTE-153-01-G-DV-ES-A-TR

Samtec Inc FTE-153-02-G-DV-A-TR

Samtec Inc FTE-153-03-G-DV-P-TR

Samtec Inc FTE-153-03-G-DV-A-P

Carling Technologies STA1E1-53/HDW-ASSM

E153 Datasheets Context Search

35N120D1

TO247AD

DSEC29

IXGN400N60B3

Mosfet 75V 120A

IXFN520N075T2

IXGN320N60A3

IXFN320N17T2

ixfn420n10t

IXGN200N60B3

IXGJ50N60C4D1

IXTN17N120L

E1531A

55N120D1

E1406A

80N60

IXFN44N80Q3

IXXN100N60B3H1

IXFN62N80Q3