DS100304 Search Results

Siemens DIODE E 1240

Abstract: IXFK80N60P3 IXFX80N60P3
Contextual Info: Advance Technical Information IXFK80N60P3 IXFX80N60P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 TO-264 IXFK Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 600 600 V V VGSS VGSM Continuous Transient ± 30 ± 40 V V

smd marking d2d

Contextual Info: 100304 Low Power Quint AND/NAND Gate General Description The 100304 is monolithic quint AND/NAND gate. The Function output is the wire-NOR of all five AND gate outputs. All inputs have 50 kΩ pull-down resistors. n n n n n Features 2000V ESD protection Pin/function compatible with 100104

ECL 100304

Contextual Info: 100304 Low Power Quint AND/NAND Gate General Description The 100304 is monolithic quint AND/NAND gate. The Function output is the wire-NOR of all five AND gate outputs. All inputs have 50 kΩ pull-down resistors. n n n n n Features 2000V ESD protection Pin/function compatible with 100104

Contextual Info: RFPA0133 3 TO 5V PROGRAMMABLE GAIN HIGH EFFICIENCY POWER AMPLIFIER „ „ „ „ Digitally Controlled Output Power 380MHz to 960MHz Frequency Range High Isolation Applications „ „ „ „ „ „ Analog Communication Systems 900MHz Spread Spectrum Systems 400MHz Industrial Radios

Contextual Info: Advance Technical Information Polar3TM HiPerFETTM Power MOSFET VDSS ID25 IXFK80N60P3 IXFX80N60P3 = = RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C

D2E diode smd

Abstract: smd D2E diode SMD D1A SMD d2c F100K J24E W24B
Contextual Info: 100304 Low Power Quint AND/NAND Gate General Description The 100304 is monolithic quint AND/NAND gate. The Function output is the wire-NOR of all five AND gate outputs. All inputs have 50 kΩ pull-down resistors. n n n n n Features 2000V ESD protection Pin/function compatible with 100104

SMD d2c

Abstract: smd D2D F100K J24E W24B tc 3086 v619
Contextual Info: & Semiconductor 100304 Low Power Quint AND/NAND Gate General Description 2000V ESD protection Pin/function com patible w ith 100104 The 100304 is m onolithic quint A N D /N AN D gate. The Func­ tion output is the w ire-N O R of all five AN D gate outputs. All

IXFK80N60P3

Abstract: 80n60
Contextual Info: IXFK80N60P3 IXFX80N60P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 = = 600V 80A  77m 250ns RDS on   trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M

Contextual Info: Semiconductor 100304 Low Power Quint AND/NAND Gate General Description 2000V ESD protection Pin/function com patible w ith 100104 The 100304 is m onolithic quint AN D /N AN D gate. The Func­ tion output is the w ire-N O R of all five AND gate outputs. All

Contextual Info: RF5500 RF5500 11b/g/n WLAN SP3T Switch 11B/G/N WLAN SP3T SWITCH Package: DFN, 8-Pin, 2.0mmx2.0mmx0.6mm Features    SP3T Switch Switch Control Voltage 2.1to 5V Typical 3.0V Low Insertion Loss 0.8dB Applications   RF 1 1 8 VRF1 RF2 2 7 VRF2