DQ160 Search Results

Contextual Info: December 1993 Edition 1.0 FUpSU DATA SHEET M B 9 8 B 7 5 14-80 DRAM MEMORY CARD DYNAMIC RANDOM ACCESS MEMORY CARD 4M x 18 bits / 2M x 36 bits The Fujitsu MB98B7514 is a Dynamic Random Access Memory DRAM card consisting of sixteen MB814400AL devices and eight MB81C1000AL devices.

DQ620

Contextual Info: VS864648041.VS1664648041B 8M,16Mx64-Bit SDRAM Module Preliminary Description The VS864648041B and VS1664648041B are 8Mx64-bit and 16Mx64-bit dual-in-line synchronous dynamic RAM module DIMM . It is mounted with 8/16 pieces of 8MxB synchronous DRAM (VG36648041BT), and each in a standard 54 pin TSOP package. The VS864648041B and VS1664648041B

Contextual Info: VS26417801 C,VS46417801C 2M,4MX64-Bit SDRAM Module VIS Description The V S 264 17 8 0 1 C and V S 4 6 4 1 7 8 0 1 C are 2M x 64 - bit and 4M x 64 - bit dual - in - line syn ch ro n o u s dynam ic RAM m odule D R A M V G 3617801C T , (D IM M ). and each It

D4512

Abstract: d4512844 D29D31 DQ200-V D45128
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4564EC726 64 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The M C-4564EC726 is a 67,108,864 words by 72 bits synchronous dynamic RAM module on which 36 pieces of 128 M SDRAM: ,uPD45128441 are assembled.

D018

Abstract: D019 D032 D051 THMY7232B0EG-80 F71R D038 CB1196
Contextual Info: T O S H IB A THMY7232B0EG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7232B0EG is a 33,554,432-word by 72-bit synchronous dynamic RAM module consisting of 18 TÒ59SM704FT DRAMs and PLL/Registers on a printed circuit board.

Contextual Info: TOSHIBA THMY7232F0EG-75,-80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 33,554,432-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7232F0EG is a 33,554,432-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM704FT DRAMs and PLL/Registers on a printed circuit board.

R2A3 02

Abstract: R2A3 M1518 R2A3 load
Contextual Info: TOSHIBA THMY721610BEG-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY721610BEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6404BFTL DRAMs and PLL/Registers on a printed circuit board.

Contextual Info: SGRAM MODULE KMM965G511Q P N / KMM966G511Q(P)N 4MB SGRAM MODULE (512Kx64 SODIMM based on 512Kx32 SGRAM) Unbuffered SGRAM Graphics 64-bit Non-ECC/Parity 144-pin SODIMM Revision 2.1 March 1998 Rev. 2.1 (Mar. 1998) ELECTRONICS SGRAM MODULE KMM965G511Q(P)N / KMM966G511Q(P)N

Contextual Info: V7S0 VS464641641B.VS864641641B 4M,8Mx64-Bit SDRAM Module Preliminary Description The VS4646441641B and VS8646441641B are 4Mx64-bit and 8Mx64-bit dual-in-line synchronous dynamic RAM module DIMM . It is mounted with 4/8 pieces of 4Mx16 synchronous DRAM (VG36641641BT), and each in a standard 54 pin TSOP package. The VS464641641B and VS864641641B

Contextual Info: MK32VT864-10YE 98.07.24 Semiconductor MK32VT864-1OYE 8,388,608 Word x 64 Bit SYNCHRONOUS DYNAMIC RAM MODULE (2BANK):_ DESCRIPTION The Oki MK32VT864-10YE is a fully decoded, 8,388,608 x 64bit synchronous dynamic random access memory composed of eight 64Mb DRAMs (4Mx16) in TSOP packages

Contextual Info: VS864648041 D,VS1664648041D 8M,16MX64-Bit SDRAM Module Description The VS864648041D and VS1664648041D are 8M x 64 bit and 16M bit x 64 Dual-ln-Line synchronous DRAM Module DIMM . It consists of 8/16 CMOS 8Mx8 bit synchronous DRAMs (VG36648041DT) with 4 banks and in standard 54 pin TSOP-II package. Decoupling capacitors are mounted on power supply line for

DQ160

Contextual Info: SIEMENS 2 M X 32-Bit Dynamic RAM Module HYM 322120S-60/-70/-80 Advanced Information • 2 097 152 words by 32-Bit organization alternative 4 194 304 words by 16-Bit • Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version) 70 ns access time

D012

Abstract: D029 D030 EDI8F3264C D01225
Contextual Info: ELECTRONIC DESIGNS INC SIE D • 32 30 1 1 4 00010SE QbT H E L D m m EDI8F3264C Electronic D itlgru lnc.a High Speed Two Megabit SRAM Module P illLO lfli 64Kx32 Static RAM CMOS, High Speed Module The EDI8F3264C is a high speed 2 megabit Static RAM module organized as 64Kx 32. This module is constructed

Contextual Info: 1307036 M/A-COM “The Powerpuck” GPS Antenna Features • • • • • Lightning Protection Groundplane Independent Multiple Connector and Mount Options Choice of Randome Colors Optional Mounting Kit Available Description Designed to operate in all climates and conditions, the

Contextual Info: GMM77316283CTG-5/6 LG Semicon Co., Ltd. 16,777,216WORDS x 72 BIT CMOS DYNAMIC RAM MODULE Description Features The GM M 77316283CTG is an I6M x 72 bits D ynamic RAM M ODULE w hich is assembled 18 pieces o f 16M x 4bit DRAM s in 32 pin TSOP n package, one 2k EEPROM for SPD in 8-pin

intel 80 82

Abstract: DQ-460 7801G DQM02 dg550
Contextual Info: VS26417801B.VS46417801B 2M,4Mx64-Bit SDRAM Module Description The VS26417801B and VS46417801B are 2M x 64 - bit and 4M x 64 - bit dual - in - line synchronous dynamic RAM module DIMM . It is mounted with 8/16 pieces of 2M x 8 synchronous DRAM(VG3617801BT), and each in a standard 44 pin TSOP package. The VS26417801B and