DQ620 Search Results

DQ620

Contextual Info: VS864648041.VS1664648041B 8M,16Mx64-Bit SDRAM Module Preliminary Description The VS864648041B and VS1664648041B are 8Mx64-bit and 16Mx64-bit dual-in-line synchronous dynamic RAM module DIMM . It is mounted with 8/16 pieces of 8MxB synchronous DRAM (VG36648041BT), and each in a standard 54 pin TSOP package. The VS864648041B and VS1664648041B

Contextual Info: VS26417801 C,VS46417801C 2M,4MX64-Bit SDRAM Module VIS Description The V S 264 17 8 0 1 C and V S 4 6 4 1 7 8 0 1 C are 2M x 64 - bit and 4M x 64 - bit dual - in - line syn ch ro n o u s dynam ic RAM m odule D R A M V G 3617801C T , (D IM M ). and each It

Contextual Info: KMM372F400BK/BS KMM372F410BK/BS DRAM MODULE KMM372F400BK/BS & KMM372F41OBK/BS Fast Page with EDO Mode 4Mx72 DRAM DIMM with ECC, 4K & 2K Refresh, 3.3V GENERAL DESCR IPTIO N FEATURES The Samsung KMM372F40 1 0B is a 4M bit x 72 Dynamic RAM high density memory module. The

sht22

Abstract: SHT12 5BE1 EL114 6nc3 SHT20 RAM128KX8 SHT13 VG-468 57BE2
Contextual Info: 5 EBSA-110 SHEET SIG 4 Schematic PREFIXES 3 2 BAN#=EBSA-110 REV#=REVB Directory 1 - STRONGARM SHT20, C 1 - Schematic sht 2 - Block sht 3 CPU_, sht 4 - Debug sht 5 - SSRAM sht 6 BUF_, IO_ Address sht 7 MUX_, SIM_ DRAM sht 8 CTA_, CTB_ Control sht 9 CTA_, CTB_

Contextual Info: TOSHIBA THMY7232F0EG-75,-80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 33,554,432-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7232F0EG is a 33,554,432-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM704FT DRAMs and PLL/Registers on a printed circuit board.

DQ380-V

Abstract: r2a11 DQ500-V
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4564EC727 64 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The M C -4 5 6 4 E C 7 2 7 is a 6 7 ,1 0 8 ,8 6 4 w o rd s by 72 bits syn ch ro n o u s d yn a m ic RAM m odule on w h ich 36 piece s of

Contextual Info: VS864648041 D,VS1664648041D 8M,16MX64-Bit SDRAM Module Description The VS864648041D and VS1664648041D are 8M x 64 bit and 16M bit x 64 Dual-ln-Line synchronous DRAM Module DIMM . It consists of 8/16 CMOS 8Mx8 bit synchronous DRAMs (VG36648041DT) with 4 banks and in standard 54 pin TSOP-II package. Decoupling capacitors are mounted on power supply line for

lg protocol

Abstract: CB165
Contextual Info: GMM76416383CTG-5/6 LG Semicon Co.,Ltd. 16,777,216W ORDS x 64 BIT CMOS DYNAMIC RAM MODULE Description Features The G M M 76416383CTG is an 16M x 64 bits D ynamic RAM M ODULE which is assembled 16 pieces o f 16M x 4bit DRAM s in 32 pin TSOP n package, one 2k EEPROM for SPD in 8-pin

630DQ

Contextual Info: GMM77332280CTG-5/6 LG Semicon Co.,Ltd. 33,554,432 WORDS x 72 BIT CMOS DYNAMIC RAM MODULE Description Features The GM M 77332280CTG is an 32M x 72 bits D ynamic RAM MODULE w hich is assembled 36 pieces o f 16M x 4bit DRAM s in 32 pin T S O P -n package, two 20bit driver ICs in

640-DQ

Abstract: DQ620 22 Tantal 710-DQO
Contextual Info: GMM77316280CNSG-5/6 LG Semicon Co.,Ltd. 16,777,216 W ORDS x 72 BIT CMOS DYNAMIC RAM MODULE Description Features The G M M 77316280CNSG is an 16M x 72 bits Dynamic RAM M ODULE w hich is assembled 18 pieces o f 8M x 8bit DRAM s in 32 pin SOJ package and tw o 16bit driver ICs in 48pin

intel 80 82

Abstract: DQ-460 7801G DQM02 dg550
Contextual Info: VS26417801B.VS46417801B 2M,4Mx64-Bit SDRAM Module Description The VS26417801B and VS46417801B are 2M x 64 - bit and 4M x 64 - bit dual - in - line synchronous dynamic RAM module DIMM . It is mounted with 8/16 pieces of 2M x 8 synchronous DRAM(VG3617801BT), and each in a standard 44 pin TSOP package. The VS26417801B and