DQ06 4 Search Results

Contextual Info: iPEM 16 Mb ASYNC SRAM AS8SLC512K32PEC 16Mb, 512Kx32 CMOS 3.3V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES DESCRIPTION Integrated Real-Time Memory Array Solution No latency or refresh fycles Parallel Read/Write Interface User Configurable via multiple enables

AS8S512K3

Contextual Info: ADVANCED iPEM 64 Mb ASYNC SRAM AS8S2M32PEC 64Mb, 2Mx32 CMOS 3.3V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES DESCRIPTION Integrated Real-Time Memory Array Solution No latency or refresh cycles Parallel Read/Write Interface

AS8SLC512K32

Contextual Info: i PEM 16 M b ASYNC SRAM Mb Austin Semiconductor, Inc. AS8SLC512K32PEC 16Mb, 512Kx32 CMOS 5.0V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES DESCRIPTION „ The AS8SLC512K32 is a high speed, 3.3V, 16Mb SRAM. The device is available with access times of 12, 15, 20

AS8S512K32PEC

Contextual Info: iPEM 16 MB ASYNC SRAM AS8S512K32PEC 16Mb, 512Kx32 CMOS 5.0V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES DESCRIPTION Integrated Real-Time Memory Array Solution No latency or refresh fycles Parallel Read/Write Interface User Configurable via multiple enables

AS8SLC512K32

Contextual Info: i PEM 16 M b ASYNC SRAM Mb Austin Semiconductor, Inc. AS8SLC512K32PEC 16Mb, 512Kx32 CMOS 3.3V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES DESCRIPTION „ The AS8SLC512K32 is a high speed, 3.3V, 16Mb SRAM. The device is available with access times of 12, 15, 20

AS8S512K32PECA

Abstract: 64Mb-SRAM DQ04 AS8SLC512K32PEC
Contextual Info: iPEM 16 MB ASYNC SRAM AS8S512K32PECA 16Mb, 512Kx32 CMOS 5.0V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES DESCRIPTION Integrated Real-Time Memory Array Solution No latency or refresh fycles Parallel Read/Write Interface User Configurable via multiple enables

AS8S512K32

Abstract: AS8S512K32PEC AS8SLC2M32PEC AS8SLC512K32 16MB SRAM MO-47
Contextual Info: i PEM 16 MB ASYNC SRAM Austin Semiconductor, Inc. AS8S512K32PEC 16Mb, 512Kx32 CMOS 5.0V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES DESCRIPTION „ The AS8S512K32 is a high speed, 5V, 16Mb SRAM. The device is available with access times of 12, 15, 20 and

Contextual Info: iPEM 16 Mb ASYNC SRAM AS8SLC512K32PEC THIS PRODUCT IS SUBJECT TO MICROSS PCN-1109 AND REPLACED BY AS8SLC512K32PECA. 16Mb, 512Kx32 CMOS 3.3V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES DESCRIPTION Integrated Real-Time Memory Array Solution

AS8SLC512K32PECA

Abstract: 64Mb-SRAM MO-47AE AS8S512K32PEC
Contextual Info: iPEM 16 Mb ASYNC SRAM AS8SLC512K32PECA 16Mb, 512Kx32 CMOS 3.3V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES DESCRIPTION Integrated Real-Time Memory Array Solution No latency or refresh fycles Parallel Read/Write Interface User Configurable via multiple enables

64MB SRAM

Abstract: MO-47
Contextual Info: iPEM 16 MB ASYNC SRAM AS8S512K32PEC THIS PRODUCT IS SUBJECT TO MICROSS PCN-1109 AND REPLACED BY AS8S512K32PECA. 16Mb, 512Kx32 CMOS 5.0V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit DESCRIPTION FEATURES The AS8S512K32 is a high speed, 5V, 16Mb SRAM. The

8l32128c

Abstract: block diagram of of TMS320C4X EDI8L32512C20AI EDI8L32512C TMS320C30 TMS320C32 DSP96002 EDI8L24128C EDI8L32256C
Contextual Info: EDI8L32512C 512K x 32 CMOS High Speed Static RAM FEATURES DESCRIPTION DSP Memory Solution • Motorola DSP96002 • Analog SHARC DSP • Texas Instruments TMS320C3x, TMS320C4x Random Access Memory Array • Fast Access Times: 12*, 15, 17, and 20ns • TTL Compatible Inputs and Outputs

block diagram of of TMS320C4X

Abstract: EDI8L32512C20AI DSP96002 EDI8L32256C EDI8L32512C TMS320C32 EDI8L32512C15AI
Contextual Info: White Electronic Designs EDI8L32512C 512Kx32 CMOS High Speed Static RAM FEATURES DESCRIPTION DSP Memory Solution The EDI8L32512C is a high speed, 5V, 16Mb SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP memory

Contextual Info: EDI8L32512C 512Kx32 CMOS High Speed Static RAM FEATURES DESCRIPTION  DSP Memory Solution The EDI8L32512C is a high speed, 5V, 16Mb SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP memory solution. The high speed, 5v supply

Memory

Abstract: FTS8L32512V
Contextual Info: FTS8L32512V 512Kx32 SRAM Module.3.3V FEATURES DESCRIPTION DSP Memory Solution The FTS8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions.

EDI8L32512V-AC

Abstract: EDI8L32128V EDI8L32512V MO-47AE MPC860 TMS320LC31 ADSP-21060L ADSP-21062L
Contextual Info: White Electronic Designs EDI8L32512V 512Kx32 SRAM Module.3.3V FEATURES DESCRIPTION DSP Memory Solution The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC

ADSP-21060L

Abstract: ADSP-21062L EDI8F32512V EDI8L32128V MO-47AE MPC860 TMS320LC31 ADSP2106XL
Contextual Info: EDI8F32512V White Electronic 512Kx32 SRAM Module.3.3V FEATURES DESCRIPTION DSP Memory Solution The EDI8F32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC

Contextual Info: FTS8L32512V 512Kx32 SRAM Module.3.3V FEATURES DESCRIPTION DSP Memory Solution The FTS8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions.

Contextual Info: EDI8L32512V 512Kx32 SRAM Module.3.3V FEATURES DESCRIPTION  DSP Memory Solution The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory

cd 5151

Abstract: ADSP-21060L ADSP-21062L EDI8L32512C EDI8L32512V MPC860 TMS320LC31
Contextual Info: EDI8L32512V 512Kx32 SRAM MODULE, 3.3V FEATURES The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions. • DSP Memory Solution

Contextual Info: EDI8F32123C ^ E D I ELECTRONIC DESIGNS, N C .I 128Kx32 Battery Backed SRAM Module ADVANCED Features 128Kx32 bit CMOS Static Random Access Memory with on-board battery backup 128Kx32 Static RAM CMOS, High Speed Module The EDI8F32123C is a 4 megabit Battery Backed SRAM

Contextual Info: MEMORY MODULE SDRam 32Mx72-BGA 3D SD2G72VB5489 -pjuspj a HEICO company Synchronous Dynamic Ram MODULE 2Gbit SDRam organized as 32Mx72, based on 32Mx16 Pin Assignment Top View BGA 134 - (9x15 - Pitch : 1.27 mm) (TOP VIEW- VIEWED BY TRANSPARENCY) 9 8 7 6 5

signal video output

Abstract: RB5C634A JPEG2000 MA10 MA11 H2V1 data bus 07 VDI02
Contextual Info: RB5C634A Technical Specification RB5C634A Technical Specification Outline JPEG2000 Coder ¦ The information contained in this document is subject to change without prior notice. ¦ The data sheet may not be copied or otherwise reproduced, in whole or in part, without prior written

Contextual Info: W D EDI8F32513C Ì 512Kx32 Battery Backed ELECTRONIC DESIGNS. INC. SRAM Module ADVANCED Features 512Kx32 bit C M O S Static Random Access Memory with on-board battery backup 512Kx32 Battery Backed SRAM Module • Access Times 70 and 85ns The EDI8F32513C is a 16 megabit Battery Backed S R A M

2576 3.3 regulators

Abstract: M2576 AUGAT 8112-AG7 8112-AG7 diode DQ06 lm2576 LAYOUT test socket for to220 415-0926 LM2576 isolated LM2576-12BT
Contextual Info: LM2576 52kHz Simple 3A Buck Voltage Regulator General Description Features The LM2576 series of monolithic integrated circuits provide all the active functions for a step-down buck switching regulator. Fixed versions are available with a3.3V, 5V, or 12V