DQ06 4 Search Results

Contextual Info: iPEM 16 Mb ASYNC SRAM AS8SLC512K32PEC 16Mb, 512Kx32 CMOS 3.3V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES DESCRIPTION Integrated Real-Time Memory Array Solution No latency or refresh fycles Parallel Read/Write Interface User Configurable via multiple enables

AS8S512K3

Contextual Info: ADVANCED iPEM 64 Mb ASYNC SRAM AS8S2M32PEC 64Mb, 2Mx32 CMOS 3.3V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES DESCRIPTION Integrated Real-Time Memory Array Solution No latency or refresh cycles Parallel Read/Write Interface

Contextual Info: i PEM 16 M b ASYNC SRAM Mb Austin Semiconductor, Inc. AS8SLC512K32PEC 16Mb, 512Kx32 CMOS 3.3V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES DESCRIPTION „ The AS8SLC512K32 is a high speed, 3.3V, 16Mb SRAM. The device is available with access times of 12, 15, 20

AS8SLC512K32

Contextual Info: i PEM 16 M b ASYNC SRAM Mb Austin Semiconductor, Inc. AS8SLC512K32PEC 16Mb, 512Kx32 CMOS 5.0V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES DESCRIPTION „ The AS8SLC512K32 is a high speed, 3.3V, 16Mb SRAM. The device is available with access times of 12, 15, 20

Contextual Info: iPEM 16 MB ASYNC SRAM AS8S512K32PECA 16Mb, 512Kx32 CMOS 5.0V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES Integrated Real-Time Memory Array Solution No latency or refresh cycles Parallel Read/Write Interface User Configurable via multiple enables

AS8S512K32PEC

Contextual Info: iPEM 16 MB ASYNC SRAM AS8S512K32PEC 16Mb, 512Kx32 CMOS 5.0V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES DESCRIPTION Integrated Real-Time Memory Array Solution No latency or refresh fycles Parallel Read/Write Interface User Configurable via multiple enables

AS8SLC512K32

Contextual Info: i PEM 16 M b ASYNC SRAM Mb Austin Semiconductor, Inc. AS8SLC512K32PEC 16Mb, 512Kx32 CMOS 3.3V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES DESCRIPTION „ The AS8SLC512K32 is a high speed, 3.3V, 16Mb SRAM. The device is available with access times of 12, 15, 20

AS8S512K32PECA

Abstract: 64Mb-SRAM DQ04 AS8SLC512K32PEC
Contextual Info: iPEM 16 MB ASYNC SRAM AS8S512K32PECA 16Mb, 512Kx32 CMOS 5.0V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES DESCRIPTION Integrated Real-Time Memory Array Solution No latency or refresh fycles Parallel Read/Write Interface User Configurable via multiple enables

AS8SLC2M32PEC

Abstract: AS8S2M32PEC 64Mb-SRAM dq09 DQ06 64MB SRAM ASYNC SRAM AS8S2M32PEC-12 AS8S2M32
Contextual Info: i PEM 64 M b ASYNC SRAM Mb Austin Semiconductor, Inc. AS8S2M32PEC 64Mb, 2Mx32 CMOS 3.3V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES DESCRIPTION „ The AS8S2M32 is a high speed, 3.3V, 64Mb SRAM. The device is available with access times of 12, 15, 20 and

AS8S512K32

Abstract: AS8S512K32PEC AS8SLC2M32PEC AS8SLC512K32 16MB SRAM MO-47
Contextual Info: i PEM 16 MB ASYNC SRAM Austin Semiconductor, Inc. AS8S512K32PEC 16Mb, 512Kx32 CMOS 5.0V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES DESCRIPTION „ The AS8S512K32 is a high speed, 5V, 16Mb SRAM. The device is available with access times of 12, 15, 20 and

Contextual Info: iPEM 16 Mb ASYNC SRAM AS8SLC512K32PEC THIS PRODUCT IS SUBJECT TO MICROSS PCN-1109 AND REPLACED BY AS8SLC512K32PECA. 16Mb, 512Kx32 CMOS 3.3V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES DESCRIPTION Integrated Real-Time Memory Array Solution

AS8S512K32

Abstract: AS8S512K32PEC AS8SLC2M32PEC
Contextual Info: i PEM 16 MB ASYNC SRAM Austin Semiconductor, Inc. AS8S512K32PEC 16Mb, 512Kx32 CMOS 5.0V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES DESCRIPTION „ The AS8S512K32 is a high speed, 5V, 16Mb SRAM. The device is available with access times of 12, 15, 20 and

AS8SLC512K32PECA

Abstract: 64Mb-SRAM MO-47AE AS8S512K32PEC
Contextual Info: iPEM 16 Mb ASYNC SRAM AS8SLC512K32PECA 16Mb, 512Kx32 CMOS 3.3V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES DESCRIPTION Integrated Real-Time Memory Array Solution No latency or refresh fycles Parallel Read/Write Interface User Configurable via multiple enables

64MB SRAM

Abstract: MO-47
Contextual Info: iPEM 16 MB ASYNC SRAM AS8S512K32PEC THIS PRODUCT IS SUBJECT TO MICROSS PCN-1109 AND REPLACED BY AS8S512K32PECA. 16Mb, 512Kx32 CMOS 5.0V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit DESCRIPTION FEATURES The AS8S512K32 is a high speed, 5V, 16Mb SRAM. The

8L32512

Abstract: block diagram of of TMS320C4X DQ04 dq09 512C d47d D310
Contextual Info: EDI8L32512C 512K x 32 CMOS High Speed Static RAM FEATURES DESCRIPTION DSP Memory Solution • Motorola DSP96002 • Analog SHARC DSP • Texas Instruments TMS320C3x, TMS320C4x Random Access Memory Array • Fast Access Times: 12*, 15, 17, and 20ns • TTL Compatible Inputs and Outputs

block diagram of of TMS320C4X

Abstract: 8L32512
Contextual Info: EDI8L32512C 512Kx32 SRAM Module 512Kx32 CMOS High Speed Static RAM Features DSP Memory Solution • Motorola DSP96002 • Analog SHARC DSP • Texas Instruments TMS320C3x, TMS320C4x Random Access Memory Array • Fast Access Times: 12*, 15, 17, and 20ns The EDI8L32512C is a high speed, 5V, 16 megabit SRAM.

dq08

Abstract: DSP96002 EDI8L24128C EDI8L32256C EDI8L32512C TMS320C32 PLCC weight 8l321
Contextual Info: EDI8L32512C White Electronic Designs 512K x 32 CMOS High Speed Static RAM FEATURES DESCRIPTION n DSP Memory Solution • Motorola DSP96002 • Analog SHARC DSP • Texas Instruments TMS320C3x, TMS320C4x n Random Access Memory Array • Fast Access Times: 12*, 15, 17, and 20ns

block diagram of of TMS320C4X

Abstract: EDI8L32512C20AI DSP96002 EDI8L32256C EDI8L32512C TMS320C32 EDI8L32512C15AI
Contextual Info: White Electronic Designs EDI8L32512C 512Kx32 CMOS High Speed Static RAM FEATURES DESCRIPTION DSP Memory Solution The EDI8L32512C is a high speed, 5V, 16Mb SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP memory

TMS320C4X

Abstract: DSP96002 EDI8L32256C EDI8L32512C TMS320C32 ADQ28 MO-47
Contextual Info: White Electronic Designs EDI8L32512C 512Kx32 CMOS High Speed Static RAM FEATURES DESCRIPTION DSP Memory Solution The EDI8L32512C is a high speed, 5V, 16Mb SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP memory

Contextual Info: EDI8L32512C 512Kx32 CMOS High Speed Static RAM FEATURES DESCRIPTION  DSP Memory Solution The EDI8L32512C is a high speed, 5V, 16Mb SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP memory solution. The high speed, 5v supply

PLCC weight

Abstract: DSP96002 EDI8L32512C DQ06 4 DQ04
Contextual Info: EDI8L32512C T NO 512K x 32 CMOS High Speed Static RAM DESCRIPTION n DSP Memory Solution • Motorola DSP96002 • Analog SHARC DSP • Texas Instruments TMS320C3x, TMS320C4x n Random Access Memory Array • Fast Access Times: 12*, 15, 17, and 20ns • TTL Compatible Inputs and Outputs

Contextual Info: EDI8L32512C ^ E D I 512KX32 SRAM Module ELECTRONIC DESIGNS, INC 512Kx32 CMOS High Speed Static RAM Features DSP Memory Solution The EDI8L32512C is a highspeed, 5V, 16 megabit SRAM. The device is available with access times of 12,15,17 and 20ns allowing the creation of a no wait state DSP memory

Memory

Abstract: FTS8L32512V
Contextual Info: FTS8L32512V 512Kx32 SRAM Module.3.3V FEATURES DESCRIPTION DSP Memory Solution The FTS8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions.

MO-47AE

Abstract: ADSP-21060L ADSP-21062L EDI8L32128V EDI8L32512V MPC860 TMS320LC31
Contextual Info: EDI8L32512V White Electronic Designs 512Kx32 SRAM Module.3.3V FEATURES    ADSP-21060L SHARC  ADSP-21062L (SHARC)  Texas Instruments TMS320LC31   The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and