DO-35 RECTIFIER Search Results

CV7040

Abstract: cv8790 OA202 equivalent BY 225 diode IS920 DO-35 silicon Rectifier diodes CV8617 CV7875 CV7332 10 35 DIODE
Contextual Info: Diodes and Arrays Hi Device Case Type Outline 1S111 1S113 1S120 1S121 1S130 1S131 1S132 1S134 1S920 1S921 1S922 1S923 1 S924 O A200 O A202 IN645 IN 646 IN647 BY401 BY402 BY403 BY404 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 D O-7 DO-7 DO-35 DO-35 DO-35 DO-35 D O-35 DO-7

CV9637

Abstract: cv8617 is920 equivalent IS920 cv7332 DO35 DIODE Is44 cv8790 CV7040 CV7875 IN4149
Contextual Info: Approved Products Small Signal Diodes Case Outlines Dimensions are in mm Case outline 1-90 - d ia1 65 -25*4 m inCathode end is denoted by broad colour band Commercial Equivalent Outline Rated VR Rated IF mA V F @ IF V mA DO-35 DO-35 DO-35 DO-35 DO-35 DO-35

PPR1315

Abstract: ppc 1n5816 1N665 1N666 1N5812 1N5813 1N5814 1N5815 1N5816 PPR1291
Contextual Info: PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST • ULTRA-FAST RECTIFIERS NUMBER O F DIE CASE VR VF IO Trr M AX Trr CONDITIONS 1N5812 SINGLE DO-4 50 0.9 10 35 A 1N5813 SINGLE DO-4 75 0.9 10 35 A 1N5814 SINGLE DO-4 100 0.9 10 35 A 1N5815 SINGLE DO-4 125 0.9

1N9688

Abstract: 4733a zener 4735A N4749A 4736a 4732A 4744a 4733a 1N4750A 4740a
Contextual Info: C RECTRON RECTIFIER SPECIALISTS SILICON ZENER DIODES/GLASS SLEEVED Nominal Zener 400mW . DO-35 Voltage 400mW . DO-35 5% T O LE R A N C E 1W. DO-41 500mW . DO-35 5% T O LE R A N C E 5% TO LE R AN C E 5% T O LE R A N C E vz Volts JEDEC P/N JEDEC P/N JEDEC P/N

Contextual Info: 1N4148 Switching Diode DO-35 Features Fast switching speed General purpose rectification Silicon epitaxial planar construction 25.4 Mechanical Data 4.0 Case: DO-35 Leads: Solderable per MIL-STD-202, Method 208 Polarity: Cathode band Marking: Type number Weight: 0.13 grams approx.

Contextual Info: DS 35 DSA 35 Rectifier Diodes Avalanche Diodes V RSM V BR min ① V RRM DSI 35 DSAI 35 VRRM = 800 - 1800 V IF(RMS) = 80 A I F(AV)M = 49 A Anode DO-203 AB Cathode V V V on stud C 900 1300 - 800 1200 DS 35-08A DS 35-12A DSI 35-08A DSI 35-12A A 1300 1700 1900

MUR120 DO15

Contextual Info: MUR120 Vishay General Semiconductor Ultrafast Plastic Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 200 V IFSM 35 A trr 25 ns VF 0.710 V Tj max. 175 °C DO-204AC (DO-15) Features Mechanical Data • • • • • • • Case: DO-204AC (DO-15)

Contextual Info: 1N4148 Switching Diode DO-35 Features *Fast switching speed *General purpose rectification *Sillicon epitaxial planar construction Mechanical Data *Cases:DO-35 *Lead:Solderable per MIL- STD-202, Method 208 *Polarity:Cathode band 25.4 4.0 25.4 *Marking:Type number

BZX55 20V

Abstract: BZX55C Series BZX55-C15 do-34 C15 DO-34 BZX55 BZX55-C18 c3v9 zener diodes color coded BZX55C BZX55C2V4
Contextual Info: BZX55C2V4 DC COMPONENTS CO., LTD. R THRU RECTIFIER SPECIALISTS BZX55C51 TECHNICAL SPECIFICATIONS OF GLASS SILICON ZENER DIODES FEATURES * Voltage Range:2.2V to 51V * Double slug type construction DO-34 / DO-35 MECHANICAL DATA * Case: Glass sealed case * Lead: MIL-STD-202E, Method 208 guaranteed

BZX55C Series

Abstract: BZX55C BZX55C2V4 BZX55C2V7 BZX55C39 BZX55C3V0 BZX55-C15 do-34 DO-34 ZENER
Contextual Info: BZX55C2V4 DC COMPONENTS CO., LTD. R THRU RECTIFIER SPECIALISTS BZX55C39 TECHNICAL SPECIFICATIONS OF GLASS SILICON ZENER DIODES FEATURES * Voltage Range:2.4V to 39V * Double slug type construction DO-34 / DO-35 MECHANICAL DATA * Case: Glass sealed case * Lead: MIL-STD-202E, Method 208 guaranteed

MUR160 vishay

Contextual Info: MUR140 & MUR160 New Product Vishay General Semiconductor Ultrafast Plastic Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 400 V, 600 V IFSM 35 A trr 50 ns VF 1.05 V Tj max. 175 °C DO-204AC (DO-15) Features • Glass passivated chip junction

ES610

Abstract: SUES808
Contextual Info: ULTRA FAST RECOVERY RECTIFIERS DO-4, DO-5, TO-3 HERMETIC SEALED AND MILITARY FEATURES: DESCRIPTION • 15 Amp to 70 Amp • 50V to 800 V • 35 ns to 70 ns • High Temperature Operation • Metallurgical^ Bonded These hermetically sealed rectifiers are used in switching power

Contextual Info: SB120A thru SB160A New Product Vishay General Semiconductor Schottky Barrier Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 20 V to 60 V IFSM 35 A VF 0.50 V, 0.70 V Tj max. 125 °C, 150 °C DO-204AL (DO-41) Features Mechanical Data • • •

FGP30B

Abstract: DO-204AC FGP30C FGP30D GP20 JESD22-B102D J-STD-002B
Contextual Info: FGP30B thru FGP30D Vishay Semiconductors Glass Passivated Ultrafast Rectifier Major Ratings and Characteristics IF AV 3.0 A VRRM 100 V to 200 V IFSM 125 A trr 35 ns VF 0.95 V 5.0 µA 175 °C ted* n e t Pa DO-204AC (DO-15) * Glass Encapsulation technique is covered by

FGP20B

Contextual Info: FGP20B thru FGP20D New Product Vishay General Semiconductor Glass Passivated Ultrafast Rectifier Major Ratings and Characteristics IF AV 2.0 A VRRM 100 V to 200 V IFSM 50 A trr 35 ns VF 0.95 V IR 2.0 µA Tj max. 175 °C ted* n e t Pa DO-204AC (DO-15) * Glass Encapsulation

SD103A

Abstract: SD103B SD103C
Contextual Info: SD103A THRU SD103C VOLTAGE 20V ~ 40V 0.35AMP Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product Features DO-35 A suffix of "-C" specifies halogen & lead-free * Low Forward Voltage Drop * Guard Ring Construction for Transient Protection

5015V

Abstract: GENERAL SEMICONDUCTOR MARKING EG SMB
Contextual Info: ES2F thru ES2G Vishay Semiconductors formerly General Semiconductor Surface Mount Ultrafast Plastic Rectifier DO-214AA SMB Reverse Voltage 300 to 400 V Forward Current 2.0 A Reverse Recovery Time 35 ns Cathode Band 0.155 (3.94) 0.130 (3.30) 0.086 (2.20)

Contextual Info: ES2F thru ES2G Vishay Semiconductors formerly General Semiconductor Surface Mount Ultrafast Plastic Rectifier DO-214AA SMB Reverse Voltage 300 to 400 V Forward Current 2.0 A Reverse Recovery Time 35 ns Cathode Band 0.155 (3.94) 0.130 (3.30) 0.086 (2.20)

DIODE 1N827

Contextual Info: IN T E R N A T IO N A L •=1000370 0000007 T 40 « I S E M 41E S EM IC O N D JEDEC REGISTERED, TEMPERATURE COMPENSATED VOLTAGE REFERENCE DIODES DO-7 Package MAXIMUM RATINGS MECHANICAL Operating Temperature: -65°Cto+200°C Herm etically Sealed DO-35 Storage Temperature: -65°C to +200°C

Contextual Info: 1N 914 Small-Signal Diode Fast Switching Rectifier Features ‹ Silicon Epitaxial Planar Diode ‹ For general purpose and switching Mechanical Data ‹ Case: DO-35 Glass Case ‹ Weight: approx. 0.13g Maximum Ratings and Thermal Characteristics TA=25oC unless otherwise noted.

Contextual Info: BAS11 _ _ SILICON GLASS PASSIVATED AVALANCHE: DIODE Diode in a DO-35 envelope. It is prim arily intended fo r general purpose applications, e.g. scan and flyback rectifiers, protection diodes etc. in television circuits. An advantage o f this diode is its capa­

1n52

Abstract: 1N5221B 1N5222B 1N5223B 1N5224B 1N5225B 1N5226B 1N5227B 1N5259B
Contextual Info: 1N5221B DC COMPONENTS CO., LTD. R THRU RECTIFIER SPECIALISTS 1N5259B TECHNICAL SPECIFICATIONS OF GLASS SILICON ZENER DIODES FEATURES * Voltage Range:2.4V to 39V * Double slug type construction DO-35 MECHANICAL DATA * * * * * Case: Glass sealed case Lead: MIL-STD-202E, Method 208 guaranteed

Contextual Info: 1N3493S/RS asii SILICON POWER RECTIFIER DESCRIPTION: The 1N3493S/RS is a Medium Current Rectifier for General Purpose Power Supply Applications. • 1N3493S = Cathode to Stud • 1N3493RS = Anode to Stud PACKAGE STYLE DO- 21 MAXIMUM RATINGS lo 35 A avg @ Te = 100 °C

40HFL40S02

Abstract: 51HQ 51HQ035 51HQ040 51HQ045 DO-203AB IRFP460 PD-2021
Contextual Info: Bulletin PD-2.021 rev. E 11/02 51HQ. SERIES 60 Amp SCHOTTKY RECTIFIER TO-203AB DO-5 Major Ratings and Characteristics Description/ Features Characteristics 51HQ. Units IF(AV) Rectangular 60 A VRRM range 35 to 45 V IFSM @ tp = 5 µs sine 10,800 A 0.58