1N5815 Search Results

UHVP806

Abstract: PHILIPS+23967 21159 TO-254 23967 RSF0840 UFR-10
Contextual Info: Micmsemj Ultra Fast Rectifiers UFR Part Number UES1404 UHVP802 UF830 RSF0840 UHVP804 UF840 UF850 RSF0860 UHVP806 UF860 UF870 UF880 1N5812 1N5813 1N6657 1N6657R 1N5815 1N66S8 1N6658R 1N6659 1N6659R 1N6079 1N6080 UFT121Q 1N6081 UFT1215 UFT1220 UFT1230 UFT1240

PPR1315

Abstract: ppc 1n5816 1N665 1N666 1N5812 1N5813 1N5814 1N5815 1N5816 PPR1291
Contextual Info: PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST • ULTRA-FAST RECTIFIERS NUMBER O F DIE CASE VR VF IO Trr M AX Trr CONDITIONS 1N5812 SINGLE DO-4 50 0.9 10 35 A 1N5813 SINGLE DO-4 75 0.9 10 35 A 1N5814 SINGLE DO-4 100 0.9 10 35 A 1N5815 SINGLE DO-4 125 0.9

1N5815 Diode

Abstract: 1N5816 diode diode 1N5815 1N5816 1000C 1N5812 1N5814 JANTX 1N5812R 1N5814 1N5814R
Contextual Info: TECHNICAL DATA FAST RECOVERY POWER RECTIFIER Qualified per MIL-PRF-19500/478 Devices 1N5812 1N5812R Qualified Level 1N5814 1N5814R 1N5815 1N5815R JAN JANTX JANTXV 1N5816 1N5816R MAXIMUM RATINGS Ratings Symbol Reverse Voltage Working Peak Reverse Voltage Average Forward Current

diodo zener 5,6 v

Abstract: in5806 1N5815 Diode IN5815 T5 DIODO Diodo zener W IN5811 1N5663 1N5663A 1N5664
Contextual Info: Zener Type No. 1N5663 1N 5 6 6 3A 1N 5664 1N 5664A Zener Voltage at Izr @ mA Volts MICROSEMI Max. Zener Impedance @ lZr Ohms Zener Voltage Tolerance No Im pedance Specified ” ” ” No S u ffix = 10% S u ffix A = 5% No S u ffix = ± 1 0% " " Power Rating

ES610

Abstract: SUES808
Contextual Info: ULTRA FAST RECOVERY RECTIFIERS DO-4, DO-5, TO-3 HERMETIC SEALED AND MILITARY FEATURES: DESCRIPTION • 15 Amp to 70 Amp • 50V to 800 V • 35 ns to 70 ns • High Temperature Operation • Metallurgical^ Bonded These hermetically sealed rectifiers are used in switching power

1N3595US

Abstract: 1N5820US 1N6642US microsemi 1N5616US 1N5617US 1N5804US 1N5806US 1N6638US 1N6639US 1N6642US
Contextual Info: Summer 1997 ESA SMT Qualifications Microsemi Ireland has just agreed with the European Space Agency at Noordwiijk, Holland to fully qualify several popular families of Signal Diodes and Power Rectifiers. The qualification work will start immediately and is expected to

MIL-PRF-19500

Abstract: 2N4033 2N3055 2N5038 JANS 2n2222au MIL-PRF-19500/336 MIL-PRF-19500/2n7588 MIL-PRF-19500/391 mil-prf-19500/JANTXV2N6341 2N5415
Contextual Info: New England Semiconductor Announces Its Certified Mil-Prf-19500 JANS Program. JANS Qualification Lots In Process By Family Mil-Prf-19500/251 -2N2219 Mil-Prf-19500/291 -2N2907A Mil-Prf-19500/455 -2N5665 Mil-Prf-19500/251 -2N2219A Mil-Prf-19500/291 -2N2907AUA

A1W TRANSISTOR

Abstract: N4001 diode a39 diode a1w* transistor DIODE 1N1343 A1W diode 1N5815 Diode diode 1N5825 TRANSISTOR A52 1N4822
Contextual Info: 2TC 000 98 2848352 DIODE TRA NSI ST OR CO INC 7^-0/- O/ E T m T 5fl4fl3SE ODDODTfl h RECTIFIERS DEVICES PKG DEVICES PKG DEVICES PKG DEVICES PKG DEVICES PKG 1N 1183 1N1185 1N1185A 1N 1186 1N 1186A 1N 1187 1N1187A 1N1188 1N1188A 1N 1190 1N 1200 1N1200A 1N1201

MB345

Abstract: MB323 MB317 ES1303 MX4115 MB313 B338 914f MX3120 MB339
Contextual Info: RECTIFIER and S IG N A L S E L E C T IO N GUIDE Avg. D C Output A .5 A Package Style Reverse Ree. Time 4-5 nsec 50-100 nsec 1.0 A A A A A A A A 250-400 nsec >400 nsec 20 nsec 75 nsec 100-200 nsec 250-500 nsec >500 nsec M B207 MB341 MB313 M B314 MB342 M B316

IN5809

Abstract: 1N5815 Diode
Contextual Info: RECTIFIERS 1N5802-1N5806 1N5807-1N5811 1N5812-1N5816 High Efficiency, ESP, 2.5 Amp to 20 Amp FE A T U R E S DESCRIPTION • • • • Th is series of High Efficiency Power Rectifiers allows c ircu it designers to design high current, high frequency sup­

1753C

Abstract: 1N5816 1N5812 1N5813 1N5814 1N5815
Contextual Info: Ultra Fast Recovery Rectifier 1N5812 - 1N5816 Dim Inches M illimeter Minimum Maximum Minimum Maximum Notes Notes: 1. 1 0 -3 2 UNF3A threads 2. Full threads within 2 1 /2 threads 3. Standard Polarity: Stud is Cathode Reverse Polarity: Stud is Anode Microsemi

FBU4K

Abstract: FBU4J PBL302 1DQ04 2FBP06 FBU4G 1N4007 FAGOR FBU8K KBPC251OW 1IN5406
Contextual Info: RECTIFIER INDEX C R O SS REFERENCE LITE-ON MOTOROLA Gl P/N P/N P/N 1 N4001 1N 4001 1N4001G IR P/N FU JI SGS-THOMSON VARO FAGOR P/N P/N P/N P/N 1N4001 1N4001 1N4001G L 126 1N4002 1N4002G 1 N4002 10D1 ERB12-1 1N4001F 148 1N4002 150 126 1 N 4 0 0 2 GP 1N4002GL

tr j 5804

Abstract: j 5804 IN5804 IN 5808 1N5812 diode 1N5816 diode IN5815 diode 1N5813 1N5815 Diode in5806
Contextual Info: S SOLID STATE INC. 46 FARRAND STREET BLOOMFIELD, NEW JERSEY 07003 www.solidstateinc.com 1N5802-1N5806 1N5807-1N5811 1N5812-1N5816 RECTIFIERS High Efficiency, ESP, 2.5 Amp to 20 Amp FEATURES D E S C R IP T IO N • • • • • • This series of High Efficiency Power

1N5815

Abstract: 1N5812 1N5813 1N5814 1N5816
Contextual Info: Ultra Fast Recovery Rectifier 1N5812 - 1N5816 Dim Inches M illim eter Minim um Maximum Minim um Maximum N otes p D Notes: 1. 1 0 - 3 2 UNF3A thre a d s 2. Full th re a d s w ithin 2 1 /2 th re a d s 3. S tandard P olarity: Stud is Cathode Reverse P olarity: Stud is

USD1120

Abstract: USD1130 L5a 12v 30a unitrode 1n5806 USD1120 UNITRODE 150A 100V gto UT347 USD1140 T0447 SES5702
Contextual Info: SCHOTTKY RECTIFIERS PRODUCT SELECTION GUIDE - e Similar to DO-41 TO-247 TO-220AC TO-39 mwm i m m m •' f ö * i . ! Ì ■ _ / •0 41 äEEBIÄE j >*, mmm \ . i*SA :iw !: VrM • *ss«ki:; • f f i“ USD1120 .45 @ 1A 50A 1N5818 .55 @ 1A 25A USD1130 .475 @ 1A

Contextual Info: DIGITRON SEMICONDUCTORS 1N5802-1N5806 1N5807-1N5811 1N5812-1N5816 RECTIFIERS HIGH EFFICIENCY 2.5 AMP TO 20 AMP MAXIMUM RATINGS Peak Inverse Voltage 2.5 Amp Series 6 Amps Series 20 Amp Series 50V 1N5802 1N5807 1N5812 75V 1N5803 1N5808 1N5813 100V 1N5804 1N5809

Contextual Info: Ultra Fast Rectifiers Page 1 of 2 Next Home Package Device Type PIV Volts IF avg Amps VF @ IF (avg) Volts trr ns q JC ° C/W DO-4 1N5812 50 20@100° C 0.9@10A 15 3.0 DO-4 1N5813 75 20@100° C 0.9@10A 15 3.0 DO-4 1N5814 100 20@100° C 0.9@10A 15 3.0 DO-4

sues2606

Abstract: SUES805 SUES706 SUES802 70t03 SUES806 SUES2605 70to3 SUES704 1N5812
Contextual Info: SEN I CO N C O M P O N E N T S INC 5 1 3 5 1 5 7 ODOGfiM t =1 • 2flE D ' T - o 3 ' >i RECOVERYRECTIFIERS -/r I lf IGSEALEtí AMDitell^K Y FEATURES: • 15 Amp to 70 Amp • 50V to 800 V • 35 ns to 70 ns • High Temperature Operation • Metallurgical^ Bonded

1N5815 Diode

Abstract: diode 1N5815 diode IN5804 IN5804 1N5802-1N5806 diode 1N5813 DIODE 6 AMP 150V power diode with piv of 100v 6A, 100v fast recovery diode IN5812
Contextual Info: 1N5802-1N5806 1N5807-1N5811 1N5812-1N5816 RECTIFIERS High Efficiency, ESP, 2.5 Amp to 20 Amp FEATURES DESCRIPTION • • • • • • • • This series of High Efficiency Power Rectifiers allows circuit designers to design high current, high frequency sup­

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

2N2222A mps

Abstract: 2N512AB 2n2222 mps 1N1096 1N589 1n4007 - 2n4001 2N698 SCR 1N233A 1N20461 2N3304
Contextual Info: ¿S c iscre:e devices ^ ! jemitronicr hot line TOLL FREE NUMBER 800-777-3960 alpha-numeric index Type 1N34A 1N35 1N36 1N38.A.B 1N40 1N42 1N44/ 1N51 1N52,A 1N54,A 1N55AB 1N56,A 1N57,A 1N58.A 1N60.A 1N61 1N62 1N63,A 1N65 1N66.A 1N67.A 1N68.A 1N69,A 1N70,A 1N71

1N914F

Abstract: 1N6542 DSR3200 1N5189 MC8936 MX4115 MB347 DSR5200 MB344 MX3120
Contextual Info: RECTIFIER and SIGNAL SELECTION GUIDE A v g . F o r w a r d R e c t ifie d C u r r e n t 0o P a c k a g e S ty le R e v e rs e R e e . T im e 4-5 nsec 50-100 nsec -5A 1.0 A A A A A A A 250-400 nsec >400 nsec 20 nsec 75 nsec 100-200 nsec 250-500 nsec >500 nsec

triacs bt 804 600v

Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
Contextual Info: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa­ tion for maintaining an unusually high level of quality, perfor­

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5