1N5803 Search Results

Contextual Info: DIGITRON SEMICONDUCTORS 1N5802-1N5806 1N5807-1N5811 1N5812-1N5816 RECTIFIERS HIGH EFFICIENCY 2.5 AMP TO 20 AMP MAXIMUM RATINGS Peak Inverse Voltage 2.5 Amp Series 6 Amps Series 20 Amp Series 50V 1N5802 1N5807 1N5812 75V 1N5803 1N5808 1N5813 100V 1N5804 1N5809

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

1N5806

Abstract: 1N5806 microsemi mil-prf-19500/477
Contextual Info: 1N5802 thru 1N5806 VOIDLESS-HERMETICALLY-SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION APPEARANCE This “ultrafast recovery” rectifier diode series is military qualified to MIL-PRF19500/477 and is ideal for high-reliability applications where a failure cannot be

diodo zener 5,6 v

Abstract: in5806 1N5815 Diode IN5815 T5 DIODO Diodo zener W IN5811 1N5663 1N5663A 1N5664
Contextual Info: Zener Type No. 1N5663 1N 5 6 6 3A 1N 5664 1N 5664A Zener Voltage at Izr @ mA Volts MICROSEMI Max. Zener Impedance @ lZr Ohms Zener Voltage Tolerance No Im pedance Specified ” ” ” No S u ffix = 10% S u ffix A = 5% No S u ffix = ± 1 0% " " Power Rating

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

1N4942

Abstract: 1N4944 1N4946 1N4947 1N5614 1N5616 1N5618 1N5620 1N5622 11733
Contextual Info: B K C INTERNATIONAL 30E D • 117^3 D0D03DM 5 ■ " P 03-13 1N5614 Series • General Purpose Rectifiers in “A ” Body Package Type 1N5614 1N5616 1N5618 1N5620 1N5622 Peak Inverse Voltage MIN. PIV Breakdown VoKage (MIN.) Bv @ 50pA Average Rectified Current

1N5806US

Abstract: 1N5802US 1N5803US 1N5804US 1N5805US
Contextual Info: Certificate : TH97/10561QM 1N5802US - 1N5806US GLASS PASSIVATED JUNCTION ULTRA FAST RECTIFIERS PRV : 50 - 150 Volts Io : 2.5 Amperes SMA DO-214AC Glass passivated junction chip High current capability High surge current capability High reliability Low reverse current

A1W TRANSISTOR

Abstract: N4001 diode a39 diode a1w* transistor DIODE 1N1343 A1W diode 1N5815 Diode diode 1N5825 TRANSISTOR A52 1N4822
Contextual Info: 2TC 000 98 2848352 DIODE TRA NSI ST OR CO INC 7^-0/- O/ E T m T 5fl4fl3SE ODDODTfl h RECTIFIERS DEVICES PKG DEVICES PKG DEVICES PKG DEVICES PKG DEVICES PKG 1N 1183 1N1185 1N1185A 1N 1186 1N 1186A 1N 1187 1N1187A 1N1188 1N1188A 1N 1190 1N 1200 1N1200A 1N1201

S25400

Abstract: Sussex Semiconductor 100 Amp current 1000 volt diode s16 transistor SE 40 RECTIFIER 1N4001 1N4002 1N4003 1N4004 1N4005
Contextual Info: TM SUSSEX SEMICONDUCTOR, INC. RECTIFIER DIE 7 7 .25 TO 100 AMP STANDARD RECOVERY RECTIFIER DIE SUSSEX SEMICONDUCTOR, INC. TM 12251 TOWNE LAKE DRIVE, FORT MYERS, FLORIDA, 33913 • TEL: 239 768-6800 • FAX: (239) 768-6868 GLASS PASSIVATED STANDARD RECOVERY RECTIFIER DIE

MB345

Abstract: MB323 MB317 ES1303 MX4115 MB313 B338 914f MX3120 MB339
Contextual Info: RECTIFIER and S IG N A L S E L E C T IO N GUIDE Avg. D C Output A .5 A Package Style Reverse Ree. Time 4-5 nsec 50-100 nsec 1.0 A A A A A A A A 250-400 nsec >400 nsec 20 nsec 75 nsec 100-200 nsec 250-500 nsec >500 nsec M B207 MB341 MB313 M B314 MB342 M B316

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

IN5809

Abstract: 1N5815 Diode
Contextual Info: RECTIFIERS 1N5802-1N5806 1N5807-1N5811 1N5812-1N5816 High Efficiency, ESP, 2.5 Amp to 20 Amp FE A T U R E S DESCRIPTION • • • • Th is series of High Efficiency Power Rectifiers allows c ircu it designers to design high current, high frequency sup­

1N5805

Contextual Info: 1N5802 - 1N5806 GLASS PASSIVATED JUNCTION ULTRA FAST RECTIFIERS PRV : 50 - 150 Volts Io : 2.5 Amperes DO - 41 FEATURES : * * * * * * * * Glass passivated chip High current capability High surge current capability High reliability Low reverse current Low forward voltage drop

BKC Semiconductors

Abstract: USM35
Contextual Info: 2.5 Amp Voidless Fast Switching Rectifiers 1N5802 thru 1N5806 Applications Hard Glass Tungsten For use in hostile environments such as military and aerospace. Used where performance, surge and small footprint are important. These rectifiers are ideal for use in aircraft or satellite power $upplies.

IN649

Abstract: BES100 bes1101 1n5615 do35 1N5805 DSAIH0002566 BES1104 HA2020
Contextual Info: R ectifiers 1N645 Series • 40 0m A Rectifiers in DO-35 Package 1 M axim um A verag e R ectified C urrent P eak inve rse V olta ge M IN . (P fV ) B re akd ow n V oltage (M IN .) @ 100 |iA (B v ) ('o' Co) 25" C 150" C Forw ard V oltage Drop (V F) @ l F 4 00 m A

100 Amp current 1000 volt diode

Abstract: Rectifier 6 amp 200 volt S25400 100 Amp current 1000 volt rectifier SE 40 RECTIFIER MPS 726 S3-500-150 S3-50-150 S25-50-50 S1-1000-150
Contextual Info: .25 TO 100 AMP FAST AND ULTRA-FAST RECOVERY RECTIFIER DIE SUSSEX SEMICONDUCTOR, INC. TM 12251 TOWNE LAKE DRIVE, FORT MYERS, FLORIDA, 33913 • TEL: 239 768-6800 • FAX: (239) 768-6868 GLASS PASSIVATED FAST AND ULTRA-FAST RECOVERY DIE REVERSE VOLTAGES - 50 TO 1000 VOLTS

SD5171

Abstract: IN6095 DSR3050 DSR3051 DSR3100 DSR5050 DSR5051 1N5809 equivalent 1N5810 diode diode 151
Contextual Info: OPTEK TECHNOLOGY INC 4&E D • L^úSflO 0001427 TTl ■ OTK FAST RECOVERY RECTIFIERS 1N5415-1N5420; 1N5615-1N5623; 1N5802-1N5811 T 03-15 Fast Recovery Rectifiers This series of high speed rectifiers are constructed using Optek's "double-slug" technique, a voidless monolithic construction which is

mil-prf-19500/477

Abstract: 1N5802 1N5802US 1N5803 1N5804 1N5805 1N5806 1N5806US JANTX 1N5804
Contextual Info: 1N5802 thru 1N5806 VOIDLESS-HERMETICALLY-SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION These “Ultrafast Recovery” rectifier diodes are military qualified to MIL-PRF-19500/477 and are ideal for high-reliability applications where a failure cannot be tolerated. These

1N5A

Abstract: SUES1110G SUES1309 MN5807 1N5804 SUES1310 SUES1102 SUES1306 SUES1104 SUES1105
Contextual Info: SEUICON COMPONENTS INC 2BE D • 0135157 0000043 fl ■ T"'03-l3 RECTIFIERS EPOXY AXIAL 800V FEATURES: d e s c r ip t io n • 2 Amp to 6 Amp Axial Leaded • 50V to 800 V PIV • 25 nS to 70 nS T RR These rectifiers are used in switching power supplies and regulators

Contextual Info: 1N5802US thru 1N5806US SURFACE MOUNT VOIDLESSHERMETICALLY-SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION APPEARANCE This “Ultrafast Recovery” surface mount rectifier diode series is military qualified to MIL-PRF-19500/477 and is ideal for high-reliability applications where a failure

USD1120

Abstract: USD1130 L5a 12v 30a unitrode 1n5806 USD1120 UNITRODE 150A 100V gto UT347 USD1140 T0447 SES5702
Contextual Info: SCHOTTKY RECTIFIERS PRODUCT SELECTION GUIDE - e Similar to DO-41 TO-247 TO-220AC TO-39 mwm i m m m •' f ö * i . ! Ì ■ _ / •0 41 äEEBIÄE j >*, mmm \ . i*SA :iw !: VrM • *ss«ki:; • f f i“ USD1120 .45 @ 1A 50A 1N5818 .55 @ 1A 25A USD1130 .475 @ 1A