DM 533 Search Results

HL1321AC

Abstract: HL1321BF HL1321DL HL1321DM HLP5400 44-C5B2
Contextual Info: HL1321 AC/BF/DL/DM, HLP5400 Description InGaAsP LD The HL1321AC/BF/DL/DM and HLP5400 are 1.3 |am band InGaAsP laser diodes with a double het­ erostructure. They are suitable as light sources for optical fiber communication systems and various types of optical equipment.

NT5TU64M8EE-AC

Abstract: NT5TU32M16EG-AC NT5TU32M16EG-ACI
Contextual Info: DDR2 512Mb SDRAM Nanya Technology Corp. NT5TU64M8EE / NT5TU32M16EG NT5TU64M8EE / NT5TU32M16EG Commercial and Industrial DDR2 512Mb SDRAM Features  JEDEC DDR2 Compliant  Data Integrity - Double-data rate on DQs, DQS, DM bus - Auto Refresh and Self Refresh Modes

NT5TU64M8EE-AC

Contextual Info: DDR2 512Mb SDRAM Nanya Technology Corp. NT5TU64M8EE / NT5TU32M16EG NT5TU64M8EE / NT5TU32M16EG Commercial and Industrial DDR2 512Mb SDRAM Features  JEDEC DDR2 Compliant  Data Integrity - Double-data rate on DQs, DQS, DM bus - Auto Refresh and Self Refresh Modes

Contextual Info: DDR2 256Mb SDRAM Nanya Technology Corp. NT5TU32M8BE / NT5TU16M16BG NT5TU32M8BE / NT5TU16M16BG Commercial and Industrial DDR2 256Mb SDRAM Features  JEDEC DDR2 Compliant  Data Integrity - Double-data rate on DQs, DQS, DM bus - Auto Refresh and Self Refresh Modes

NT5TU32M16

Contextual Info: DDR2 512Mb SDRAM Nanya Technology Corp. NT5TU64M8EE / NT5TU32M16EG NT5TU64M8EE / NT5TU32M16EG Commercial, Industrial and Automotive DDR2 512Mb SDRAM Features  JEDEC DDR2 Compliant  Data Integrity - Double-data rate on DQs, DQS, DM bus - Auto Refresh and Self Refresh Modes

Contextual Info: 1Gb DDR2 DDR2 1Gb SDRAM H-Die Nanya Technology Corp. NT5TU128M8HE / NT5TU64M16HG NT5TU128M8HE / NT5TU64M16HG Commercial, Industrial and Automotive DDR2 1Gb SDRAM Features  JEDEC DDR2 Compliant  Data Integrity - Double-data rate on DQs, DQS, DM bus - Auto Refresh and Self Refresh Modes

Contextual Info: 1Gb DDR2 DDR2 1Gb SDRAM H-Die Nanya Technology Corp. NT5TU128M8HE / NT5TU64M16HG NT5TU128M8HE / NT5TU64M16HG Commercial, Industrial and Automotive DDR2 1Gb SDRAM Features  JEDEC DDR2 Compliant  Data Integrity - Double-data rate on DQs, DQS, DM bus - Auto Refresh and Self Refresh Modes

SFN123

Abstract: T-39
Contextual Info: 8368602 SOLITRON DEVICES SFN123 INC 70C 02010 D T-39-11 ^ SWITCH MOS "^^Ë TâitatQ a oonaoin m | PACKAGE TO-3 POWER MOS MAXIMUM RATINGS VDS XD *DM VGS PD XL ^J oper T . stg UNITS PARAMETER SYMBOL V Voltage, Drain to Source 60 Drain Current, Continuous @ T =25°C

SFN132

Abstract: T-39
Contextual Info: 8368602 SOLITRON DEVICES 70 »E|ö3bflbDE 00D5G17 7 1 INC 70C 02017 D SWITCH MOS SFN132 POWER M O S MAXIMUM *D *DM VGS PD IL ^J oper T „ stg PACKAGE TO-3 RATINGS UNITS PARAMETER SYMBOL VDS V Voltage, Drain to Source 100 Drain Current, Continuous 0 T =25°C

82378ib

Contextual Info: A P M Ä M ! DM iP© I^[ìfflA'irD@ N] in te i 82378IB SYSTEM I/O SIO Provides the Bridge Between the PCI Bus and ISA Bus Arbitration for PCI Devices — Four PCI Masters are Supported — Fixed, Rotating, or a Combination of the Two 100% PCI and ISA Compatible

SFN422

Abstract: T-39
Contextual Info: 70 8368602 SOLITRON DEVICES INC DE I û3bâbOE □□□aDfll 5 • " n l l M _ OI1 ■ ■ D/ TOC 02081 T-39-11 SWITCH MOS N- SFN422 POWER MOS PACKAGE TO-3 MAXIMUM RATINGS *DM VGS PD XL ^J oper T „ stg 500 Drain Current, Continuous @ T =25°C ’ c

Contextual Info: 8368602 SOLITRON DEVICES SFN353 INC 7oc 02070 S W IT C H PACKAGE TO-3 MOS T-39-13 0002070 0 T 70 POWER MOS MAXIMUM RATINGS SYMBOL VDS *D *DM VGS PD *L TJ oper T _ stg UNITS PARAMETER Voltage, Drain Co Source Drain Current, Continuous @ T >25°C c • Drain Current, Pulsed

sfn322

Contextual Info: 83 pftR n? ~7IQ «ctm n i t t r do kwi n Fr vVTT QQ f&5 si DE I ö3böfeiD5 DQDSOtil D inc 70C 02061 T-39-11 SWITCH MOS SFN322 POWER MOS PACKAGE TO-3 MAXIMUM RATINGS SYMBOL VDS rD *DM VGS PD lL TJ oper T stg * UNITS PARAMETER Voltage, Drain to Source 400

SFN331

Abstract: T-39 TO228
Contextual Info: 8368602 SOL ITRON DEVICES SFN331 INC 70C 02064 SWITCH M O S 70 PACKAGE TO-3 D T-39-11 i>E | fl3tatM o o ü ä Q M s f POWER MOS MAXIMUM RATINGS SYMBOL VDS *D *DM to PD ILTJ oper T stg * UNITS PARAMETER Voltage, Drain Co Source 350 V Drain Current, Continuous @ T •25°C

101308

Contextual Info: Rev: 101308 DS3 4 T 1 0 8 DK Eva luat ion K it for 1 - t o 8 -Port T DM -ove r-Pa cke t I Cs Ge ne ra l De sc ript ion The DS34T108DK is an easy-to-use evaluation kit for the DS34T108 octal TDM-over-Packet IC and for the DS34T101, T102, T104, S101, S102, S104, and

SK 10 BAT 065

Abstract: 0/SK 10 BAT 065 20/SK 10 BAT 065
Contextual Info: A dvanced P o w er Te c h n o lo g y O D APT10M25BNR 100V APT10M30BNR 100V O s POWER MOS IV® 75A 0.025a 75A 0.030Ü AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'd *DM VGS V GSM PD t j ,t stg All Ratings: Tc = 25°C unless otherwise specified.

SFN332

Abstract: T-39 15OHMS
Contextual Info: _ 8 3 6 8 6 0 2 S O L I T R O N D E V I C E S 7Q INC D F | f l 3 b f l b D E DODEOtiS 7 | ~ • ■ 70C 02065 Kj T-39-11 SWITCH MOS SFN332 POWER MOS PACKAGE TO-3 MAXIMUM RATINGS SYMBOL VDS *D *DM VGS PD \ TJ oper T . s Ck UNITS PARAMETER Voltage, Drain to Source

ATC 2603

Abstract: te 2443 MOTOROLA transistor 08BSC NS 8002 1151 MD3468
Contextual Info: MOTOROLA SC XSTRS/R F 4bE ]> b3 b?2 54 0 0^ 24 34 MOTOROLA 5 M 0 T b T -H 3 -¿ 5 SEMICONDUCTOR TECHNICAL DATA ( Discrete Military Products P N P S ilic o n Dual/Quad Sm all-Signal T ra n sisto rs Dm mini MD3468 MD3468F (Duals) MHQ3468 MQ3468 (Quads) . . . designed fo r g en era l-p u rp o s e a m p lifie r and sw itch in g applications. M atc h e d devices

92CS-9S32

Abstract: Photoconductive Cell S-15
Contextual Info: PHOTOCONDUCTÏVE CELL C A DM I U M- S UL FI D E , S I DE-ON TYPE H A V I N G S - 15 R E S P O N S E _ DATA General: .S-15 S p e c t r a l R e s p o n s e . W a v e le n g t h o f Maxim um R e s p o n s e . 5 8 0 0 ± 5 0 0 a n g s t r o m s

Contextual Info: 240PIN DDR2 533 Registered DIMM 1024MB With 64Mx8 CL4 TS128MQR72V5J Description The TS128MQR72V5J is a 128M x 72bits DDR2-533 Registered DIMM. The TS128MQR72V5J consists of 18 pcs 64Mx8its DDR2 SDRAMs in 60 ball FBGA package, 1 pcs register in 96 ball uBGA package, 1 pcs PLL driver

Contextual Info: 240PIN DDR2 533 Registered DIMM 2048MB With 128Mx4 CL4 TS256MQR72V5K Placement Description The TS256MQR72V5K is a 256M x 72bits DDR2-533 Registered DIMM. The TS256MQR72V5K consists of 36 pcs 128Mx4bits DDR2 SDRAMs in 60 ball FBGA package, 4 pcs register in 96 ball uBGA package, 1 piece

Contextual Info: 240PIN DDR2 533 Registered DIMM 1024MB With 64Mx8 CL4 TS128MQR72V5J Placement Description The TS128MQR72V5J is a 128M x 72bits DDR2-533 Registered DIMM. The TS128MQR72V5J consists of 18 pcs 64Mx8 bits DDR2 SDRAMs in 60 ball FBGA package, 2 pcs register in 96 ball uBGA package, 1 pcs

Contextual Info: 240PIN DDR2 533 Registered DIMM 2048MB With 128Mx4 CL4 TS256MQR72V5K Placement Description The TS256MQR72V5K is a 256M x 72bits DDR2-533 Registered DIMM. The TS256MQR72V5K consists of 36 pcs 128Mx4bits DDR2 SDRAMs in 60 ball FBGA package, 4 pcs register in 96 ball uBGA package, 1 piece

Contextual Info: 240PIN DDR2 533 Registered DIMM 2048MB With 128Mx4 CL4 TS256MQR72V5K Placement Description The TS256MQR72V5K is a 256M x 72bits DDR2-533 Registered DIMM. The TS256MQR72V5K consists of 36 pcs 128Mx4bits DDR2 SDRAMs in 60 ball FBGA package, 4 pcs register in 96 ball uBGA package, 1 piece