TO228 Search Results

sfn065d

Abstract: itron 406
Contextual Info: 8368602 SOL ITRON DEVICES SFN065D INC 01990 SWITCH MOS PA CKA G E TO-3 IDM VGS PD XL T J oper T . stg UNITS Voltage, Drain to Source Drain Current, Clamped Inductive XDSS V 010 G fs VGS(th). IGSS C ISS CRSS coss ^d(on) t r td ( o f f ) Cf 16 W 20 A -55 to +150

sfnf065a

Abstract: TO228
Contextual Info: S O L IT R O N D E V IC E S INC- 7D d e . | a a tflb D a o a o n a a SWITCH MOS i | t^39^o7 SFNF065A POWER MOS MAXIMUM IDM VGS PD h ^•J oper T stg I. UNITS Voltage, Drain to Source 60 V Drain Current, Continuous @ T =25°C ’ c Drain Current, Pulsed

sfn452a

Contextual Info: 8368602 » F l f l B b ö b O S OQQECHB DEVICES 1 I INC 70C ÏI3 Ç M 3 02093 SWITCH MOS ^ SFN452A POWER MOS PACKAGE TO -3 MAXIMUM RATINGS VDS *D XDM VGS PD Tj oper T stg 1- UNITS PARAMETER SYMBOL Voltage, Drain to Source 500 V Drain Current, Continuous @ T *25°C

sfn151

Contextual Info: 8368602 SOLITRON DEVICES INC SFN151 70C 02020 SWITCH MOS PACKAGE TO -3 D T-39-13 ï>F|fl3 bûL.oE □□□sded 7 | ~ POWER MOS MAXIMUM RATINGS VDS XD IDM VGS PD *L ^J oper T stg UNITS PARAMETER SYMBOL 60 Drain Current, Continuous @ Tc=25°C 40 Drain Current, Pulsed

sfnf101a

Abstract: electrical symbols
Contextual Info: SOLÎTRON DEVICES INC 7Ü DE | Û3t.flti02 O Q O l ^ l b | T-39-05 SWITCH MOS SFNF101A POWER MOS PACKAGE TO-39 MAXIMUM RATINGS *DM VGS PD XL ^J oper T „ stg “ 100 Drain Current, Continuous @ T »25°C c Drain Current, Pulsed 1 .5 4.5 A Voltage, Gate-to-Source

Contextual Info: T0-228/TO232 Wideband RF/Pulse Transformers .25-200 MHzZ.5-100 MHz VML GUARANTEED MINIMUM PERFORMANCE DATA TYPICAL PERFORMANCE SPECIFICATIONS FOR MODEL TO-228 Type 50 ohm unbalanced 200 ohm balanced symm. DC Isolated C.T. - 1 dB Bandwidth, MHz 25-200 Midband insertion loss dB

2SK2690-01

Abstract: SC-65 TO228AA
Contextual Info: I.Scope This specifies Fuji Power MOS FET 2SK2690-01 2.Construction N-Channel enhancement mode power MOSFET 3,Applications for Switching 4.0utview T0-3P Outview See to 5/13 page S.Absolute Maximum Ratings at Tc=25°C unless otherwise specified Symbol Description

N57R

Abstract: 7PNN
Contextual Info: _ I - _ _ SPECIFICATION DEVICE NAME : TYPE NAME Power MOSFET : 2SK2690-01 SPEC. NO. Fuji Electric Co.,Ltd. This Specification is subject to change without notice. D ATE NAM E . APPROVED Fuji Electric Co.,Ltd.

LT082

Abstract: LT081 LT089 LT081S SML55405 transistors 1U BUR20 TC15U800
Contextual Info: POWER SILICON TRANSISTORS Item Number •c Part Number Manufacturer Type Max hFE fT ICBO Max t0N Max on ON Min Hz) (A) (s) 300 325 350 400 400 400 400 425 425 450 700 625 230 300 625 885 1 7k 350 530 350 V(BR)CEO Max (A) PD r <CE)Mt Max (Ohms) Toper Max

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

SFN222

Abstract: T-39
Contextual Info: 8368602 SOLITRON DEVICES ?D INC D E | a 3 t,atoa 0002045 1 I “ 70C 02045 D T-39-11 S W IT C H IW O S SFN222 POWER MOS PACKAGE TO-3 MAXIMUM RATINGS SYMBOL VDS XD IDM VGS PD UNITS PARAMETER Voltage, Drain Co Source Drain Current, Continuous @ T =25°C c

SFN223

Abstract: T-39
Contextual Info: 8368602 SOLITRON DEVICES SFN223 INC 70C 0 2 0 4 6 D T^ m I SWITCH MOS PACKAGE TO-3 POWER MOS MAXIMUM RATINGS VDS *D IDM VGS PD *L Tj oper stg UNITS PARAMETER SYMBOL Voltage, Drain to Source 150 V Drain Current, Continuous @ Tc*25°C 4.0 A Drain Current, Pulsed

SFN232

Abstract: T-39
Contextual Info: 8368602 SOL ITRON DEVICES iE I a a t a t a a aooscmi i | 70C 02049 1 1 SWITCH MOS SFN232 POWER MOS PACKAGE TO-3 MAXIMUM RATINGS VDS PD *L Tj oper T „ stg Drain Current, Continuous @ T *25°C c Drain Current, Pulsed A • VGS V 200 o IDM Voltage, Drain to Source

SFN351A

Abstract: T-39 SFN351
Contextual Info: 8368602 SOLITRON DEVICES SFN351A INC D' 70C 0 2 0 7 2 SWITCH M O S 70 T-39-13 C E l«3tat,os 0002075 4 f PACKAGE TO-3 MAXIMUM RATINGS Voltage, Drain to Source - VDS *D *DM VGS PD *L ^J oper T stg - UNITS PARAMETER SYMBOL ^ Drain Current, Continuous @ T »25°C

BUL 512 HI

Abstract: SFN453 T-39
Contextual Info: 8368602 SOLITRON DEVICES SFN453 INC 70C 02090 SWITCH MOS PACKAGE TO -3 td 0^ j-39-13 ' iË|a3bôt,o5 □□oegìq h T POWER MOS MAXIMUM RATINGS VDS *D IDM en PD XL Tj oper T stg ^ UNITS PARAMETER SYMBOL Voltage, Drain to Source Drain Current, Continuous @ Tc*25°C

SFN106A3

Abstract: IRF120 T-39
Contextual Info: 8368602 SOL ITRON DEVICES INCH'D DE | û 3 h ô b D S 0001171 0 J ~ T-39~ H SW ITCHM OS SFM06A3 POWER MOS DEVICE 100V / 8A N Channel, TO-3 Package, IRF120 Equivalent FEATURES • • • • • • Excellent temperature stability • Ease of paralleling

SFN451A

Abstract: T-39
Contextual Info: 8368602 SOL ITRON DEVICES INC SFN451A 70C 02092 D^ ^DeTJ fl3L,flbD2 QOGHOTS o SWITCH MOS PACKAGE TO -3 POWER MOS MAXIMUM RATINGS SYMBOL VDS XD *DM VGS PD *L ^J oper T „ stg UNITS PARAMETER Voltage, Drain Co Source 450 V Drain Current, Continuous @ Tc«25°C

SFN203A

Abstract: T-39
Contextual Info: _8368602 SOLITRON DEVICES INC 70 Dlf|a3bûbG2 0D02035 T | SWITCH MOS o 70C 02035 T-39-11 A SFN203A POWER MOS PACKAGE TO-3 MAXIMUM RATINGS - *D XDM VGS - PD XL ^JCoper T „ stg Voltage, Drain Co Source Drain Current, Continuous @ T *25°C c Drain Current, Pulsed

bul 3040

Abstract: BUL 512 HI SFN433 T-39 10-32 UNF 2A
Contextual Info: 8368602 SOL ITRON DEVICES INC SFN433 70C 02086 SWITCH MOS PA CKA G E TO-3 D T-39-11 f l 3 b ô t i0 a o o o a o f lt . 4 POWER MOS MAXIMUM RATINGS SYMBOL VDS *D ZDM VGS PD XL ^J oper T stg * UNITS PARAMETER Voltage, Drain Co Source Drain Current, Continuous @ T =25°C

SFN252

Abstract: T-39
Contextual Info: 8368602 SOLITRON DEVICES 7D INC »E|B3batoa DDGEGS3 D | T-39-13 70c 02053 SWITCH MOS N SFN252 POWER MOS PACKAGE TO-3 MAXIMUM RATINGS • VDS IDM VGS PD *L TJ oper T „ stg Voltage, Drain to Source 100 Voltage, Gate-to-Source Ì 20 Power Dissipation @ Tc«25°C

SFN203D

Abstract: T-39
Contextual Info: 8368602 S O L I T RO N DEVICES INC SFN203D 70C 02038 SWITCH MOS PACKAGE TO-3 D Î-39^îl-' fl3t.at.0E []00a03fl 4 POWER MOS MAXIMUM RATINGS SYMBOL VDS *D IDM VGS PD IL TJ oper T „ stg UNITS PARAMETER Voltage, Drain to Source 150 Drain Current, Continuous @ T =25°C

SFN353A

Abstract: T-39
Contextual Info: 8368602 SOLITRON DEVICES S F N 3 5 3 A INC 7 °C 0 2 0 7 4 S W I T C H PACKAGE TO -3 D ^ T-39-13 M O S ^ doobg ?* a POWER MOS MAXIMUM RATINGS VDS JD IDM VGS PD *L TJ oper T stg UNITS PARAMETER SYMBOL V Voltage, Drain to Source 350 Drain Current, Continuous @ T *25°C

Contextual Info: T0-228/TO232 Wideband RF/Pulse Transformers .25-200 MHz/.5-100 MHz GUARANTEED MINIMUM PERFORMANCE DATA TYPICAL PERFORMANCE SPECIFICATIONS FOR MODEL TO-228 Type 50 ohm unbalanced 200 ohm balanced symm. DC Isolated C.T - 1 dB Bandwidth. MHz Midband insertion loss dB

2SB641

Abstract: BC181 3SM diode CS9012 SF158 2S302 LOW-POWER SILICON PNP 2N924 BCZ10 HA9048
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 2N1221 2S3030 2S3030 BCZ10 2S302 HA9048 HA9048 TP3S38 2N923 BCY28 5 10 ~~T~~8A 2S3230 A5T3S38 2N2696 2N2927 OC200 OC200 SS3638 TMPT3S38 15 20 ~~~~~8 MPS3638 A5T5226 2N5226 PN3638 2N2695 2N3638 2S323 2S323 25 30