TO228AA Search Results

2SK2690-01

Abstract: SC-65 TO228AA
Contextual Info: I.Scope This specifies Fuji Power MOS FET 2SK2690-01 2.Construction N-Channel enhancement mode power MOSFET 3,Applications for Switching 4.0utview T0-3P Outview See to 5/13 page S.Absolute Maximum Ratings at Tc=25°C unless otherwise specified Symbol Description

N57R

Abstract: 7PNN
Contextual Info: _ I - _ _ SPECIFICATION DEVICE NAME : TYPE NAME Power MOSFET : 2SK2690-01 SPEC. NO. Fuji Electric Co.,Ltd. This Specification is subject to change without notice. D ATE NAM E . APPROVED Fuji Electric Co.,Ltd.

Contextual Info: SOLID STATE DEVICES INC 35E D • 03bt011 0002314 S * S S I T - 3 9 - o ff Solid State Devices, Inc. Power MosfetS* Continued 14849 Firestone Boulevard • La Mirada, C A 90638 Phone (213)921-9660 • Fax (714)522-7424 25°C Electrical Characteristics V D S*^#D S O N W *

2NS604

Abstract: 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302
Contextual Info: -Jfolìtron P L A N A R P O W E R T R A N S IS T O R S Devices. Inc H DEVICE TYPE VCEO V hFE MIN/MAX 2N2387 2N2988 2N2S89 2N2990 2N2991 80 100 80 100 80 2N2992 2N2993 2N2994 2N3439 2N3440 ÎA M W P K M ic (A) PT MAX (W) CASE TYPE CHIP TYPE ic (A) 25/75 25/75

BD160

Abstract: 2SC3303 2SD1147 to-53 2sb550
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO Of) hFE fT ICBO Max Max toN Max ON) Mln (Hz) (A) (8) PD r (CE)sat Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . .

2N5286

Abstract: 2N5290 SOLITRON 2N5740 SDT13305 SDT3775 SDT85502 2N439S 2N5610 2N6562
Contextual Info: SOLITRON DEVICES INC ^ D eT| fl3t.flt.DE 0D0S7b5 7 l ~ T ' 3 3 - 0 / F ^ E x y K g T T a t m , © _ PLAN AR POWER TRAN SISTO RS § M&. DEVICE TYPE hpE MIN/MAX @ ic A VCE (sat) MAX (V) @ ic (A) *T MIN (MHz) PT

2N5672 solitron

Abstract: TU105-B01 2N5004 SDT55907 2N3658 TU201 TU108-B01 TU206-B01
Contextual Info: SOLITRON DEVICES INC K ¿eÆ liÊron _ r a Q i g H U ? © M M , ! Devices. Inc. DEVICE TYPE ito S P A C E FLIGHT PO W ER TRAIMSISTORS CONTROL DRAWING VCBO VOLTS VCEO VOLTS 2N5038 2N5074 2N5153 2N5539 2N5672 5203/009-01B 4203/022-01B

Contextual Info: SOLID STATE DEVICES INC 3SE D •! Ö3bb011 0002317 0 * S S I N-FET 28.0 100 0.077 SFF140V N-FET 18.0 200 0.180 SFF240V N-FET 10.0 400 0.550 SFF340V N-FET 8.0 500 0.850 SFF440V N-FET 30.0 100 0.055 SFF150V N-FET 30.0 200 0.085 SFF250V N-FET 15.0 400 0.300

sgsp531

Abstract: 2sk76 irf33 unitrode VN0340N5 MTD1N40-1 sfn02806 stm231 stm331 650P
Contextual Info: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) 9FS VGS(th) Min Max (V) (5) 'sa C Max (F) tr Max (5) tf Max (5) Toper Max (OC) Package Style 150 150 J 150 J 150 150 150 J 150 J 150 A 150 J 150 J TO-39 TO-92

SDT85502

Abstract: SDT849 a/TO111 2N5002 SDT3403 SDT6314 BU208 2N2657 2N2877 2N2879
Contextual Info: Device Type VCEO 2N2657 2N2658 2N2877 2N2878 2N2879 2N2880 2N2890 2N2891 2N3744 2N3745 2N3746 2N3747 2N3748 2N3749 2N3750 2N3751 2N3752 2N3996 2N3997 2N3998 2N3999 2N4111 2N4112 2N4113 2N4150 2N4305 2N4307 2N4309 2N4311 2N4395 2N4396 2N4895 2N4896 2N4897 2N4913

2N3599

Abstract: 1b01
Contextual Info: -JoütroiI S P A C E FLIG H T P O W E R T R A N S IS T O R S POWER @ 100“C WATTS CASE TYPE 5.0 5.0 5.0 5.0 5.0 4.0 30.0 30.0 30.0 30.0 TO-5 TO-111 TO-111 T O - l ll / I T O -1 l l / I 5.0 5.0 2.0 2.0 2.0 5.0 4.0 4.0 4.0 TO-5 TO-5* TO-5 TO-5 TO-5 5.00 —

Contextual Info: •WLii> STATE DEVICES INC 3SE D m ÖBbtail ÜQ0231Ö 2 BISSI T - 33-o| Bipolar Transistors* Solid State Devices, Inc. Continued 14849 Firestone Boulevard • La Mirada, CA 90638 Phone (213)921-9660 • Fax (714)522-7424 25°C Electrical Characteristics

Dual Schottky Rectifiers

Contextual Info: SOLID STATE DEVICES INC 3SE D • 03^011 g0//cystate Devices, Inc. 14849 Firestone Boulevard • La Mirada, CA 90638 Phone 213 921-9660 • Fax (714)522-7424 0005307 a * S S I f~23-07 Dual Schottky Rectifiers* Common Catho<Îe Configuration 25°C Electrical Characteristics Per Leg

Contextual Info: SOLID STATE D E V I C E S INC 3SE D M fl3bb011 00 02 31 0 A « S S I j l So//c/ State sS l Dual Ultrafast Rectifiers 25°C Electrical Characteristics Per Leg A Package Style TO-257 J v v IO ;% & -V F V Devices, Inc. 14849 Firestone Boulevard • La Mirada, CA 90638

VN1210N5

Abstract: BR 115N sfn02202 sfn02802 sfn02812 RRF530
Contextual Info: MOSFET Item Number Part Number Manufacturer V BR DSS loss Max Of) (A) rDs (on) (Ohms) Po Max (W) 9FS Min (S) V GS<tri) Max (V) Cin Max tr Max tf Max (P) (8) (8) T Opw Max Package Style (°C) MOSFETs, N-Channel Enhancement-Type (Cont'd) . . . . 5 • . . .10

TO-228AA

Contextual Info: TELEDYNE COMPONENTS T W X m EÖE D M öWbUS ^ æ QüQb417 3 J * r 3s m i 2 7 SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE VERTICAL D-MOS FET ULTRA LOW-LEAKAGE ORDERING INFORMATION SD1127BD TO-228AA TO-92 Plastic Package SD1127CHP Sorted Chips in Waffle Pack

2SB5950

Abstract: 2SD5250 2SB616 NEC 2SD586 to-53 2SC940 NEC 2sb616 2SB595Y 2SB616 2SD586 2SD52
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V BR CEO (A) (V) PD Max hFE *T ON) Min (Hz) 'CBO t0N r (CE)sat Toper Max Max (A) (s) Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . -10 . . .15

2SK2690

Abstract: 2SK2690-01 SC-65 TI SVG
Contextual Info: SPECIFICATION DEVICE NAME : Power M O SFET TYPE NAME 2SK2690-01 : SPEC. NO. Fuji Electric Co.,Ltd. This Specification is subject to change without notice. DATE NAME APPROVED DRAWN CHECKED -¿a Fuji Electric Co.,Ltd. V, & 1.Scope This specifies Fuji Power MO S F ET 2 S K2690-01

TU201

Abstract: 2N5004 2N5005 Solitron Devices TU115-B01 S2N4150 S2N2658 S2N2880-1 S2N3749 S2N3749-1
Contextual Info: _ 6 3 6 8 6 0 2 SOL I TRON DEVICES INC_ 95D 0 2 784 D T » *3 ^ - q / S0 LITR0 N DEVICES INC T5 DEI fl3 t.flbDa □0 DE7 Û4 h [ p ia » © ’!!’ © A T M ,© _ ^ r n E C F B E S S P A C E FLIGHT POW ER TRANSISTORS

1506-50

Abstract: TO228AA 25020 1506 60 D3103 SDRY1210 SDRY1220 SDRY430 SDRY440 SDRY450
Contextual Info: SOLITRON DEVICES INC D • T-o5- 1 03bfibDS DÜD31D3 S ■ T-03- If FAST RECOVERY RECTIFIERS (isolated packages PIV (V) VF 0 (A) SDRY810 SDRYS2C SDRY430 SDRY440 SDRY450 100 200 300 400 500 1.0508 1.1508 1.15(34 1.2504 1.2504 50 50 50 50 50 30 30 30 50 50

kt 714

Abstract: SFF220C
Contextual Info: SOLID STATE DEVICES INC 35E D B Ô3bb011 00Q2313 3 BISSI ^ ll Solid State Devices, Inc. 14849 Firestone Boulevard * La Mirada, CA 90638 Phone 213 921-9660 • Fax (714)522-7424 Silicon Controlled Rectifiers (SCRs) 25°C Electrical Characteristics Polarity

SDT84

Contextual Info: 8 3 6 8 6 0 2 S O L IT R O N D E V I C E S INC 95 D S0LITR0N DEVICES INC TS 02766 D T' J ?3- DE ö 3 h ö b ü 2 □ 00S7t.b 4 Devices. Inc. PLANAR POWER TRANSISTORS M [continued] (A fT MIN (MHz) PT MAX (W) CASE TYPE CHIP TYPE 0.30 0.30 0.30 0.30 0.25 2.0