DIRECT RDRAM RAMBUS 1200 Search Results

intel MOTHERBOARD pcb layout guide

Abstract: 1553 stub repeater intel Chipset CRB Schematics intel 860 pcb layout guide differential ohms stackup 2N3904 82803AA MMBT3904LT1 PC800 SN74LVC07A
Contextual Info: R Intel 860 Chipset Memory Expansion Card MEC Design Guide May 2001 Document Number: 298302-001 R ® Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual

MR16R162GAF0-CK8

Abstract: MR16R1622
Contextual Info: MR16R1622 4/8/G AF0 MR18R1622(4/8/G)AF0 Change History Version 1.1 (August 2001) * First copy. * Based on the 1.0ver Rambus 256/288Mbit RDRAMs base RIMM Datasheet Page 0 Version 1.1 Aug. 2001 MR16R1622(4/8/G)AF0 MR18R1622(4/8/G)AF0 (16Mx16)*2(4/8/16)pcs RIMMTM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V

SAMSUNG MR18R162GMN0

Abstract: A76 MARKING CODE MR18R162GMN0-CK8
Contextual Info: MR16R1624 6/8/C/G MN0 MR18R1624(6/8/C/G)MN0 Change History Version 0.9 (January 2000) - Preliminary * First copy. * Based on the 1.02ver 128/144Mbit RDRAMs base RIMM Datasheet Version 1.0 (October 2000) - Preliminary * Based on the 1.0ver Rambus 256/288Mb RDRAMs base RIMM datasheet

kmmr18r88c1-rk8

Abstract: rg6 f connector 750 B36
Contextual Info: KMMR16R84 6/8/C/G AC1 KMMR18R84(6/8/C/G)AC1 4/6/8/12/16d RIMMTM Module with 128Mb RDRAMs 4/6/8/12/16d RIMMTM Module with 144Mb RDRAMs Revision History Version 1.0 (August 1999) - Preliminary - First copy. - Based on the Rambus RIMM Datasheet Rev.1.0. Version 1.01 (October 1999)

a65 1021

Contextual Info: MR16R1622 4/8/G AF0(1) MR18R1622(4/8/G)AF0(1) Preliminary Change History Version 1.1 (August 2001) * First copy. * Based on the 1.0ver Rambus 256/288Mbit RDRAMs base RIMM Datasheet Version 1.2 (February 2002) * Add 1066-35 binning Version 1.3 (April 2002)

MR18R0828AN1-CK8

Abstract: ck7 marking code MR18R0824 marking code b35 gan1 marking B44
Contextual Info: MR16R0824 6/8/C/G AN1 MR18R0824(6/8/C/G)AN1 Change History Version 1.0 (August 1999) - Preliminary * First copy. * Based on the Rambus RIMM Datasheet Rev.1.0. Version 1.01 (October 1999) Page No. Change Description 1 - Delete the part numbers of low power.

marking a86

Abstract: transistor MN1 DATA SHEET transistor MN1
Contextual Info: MR16R1624 6/8 MN1 MR18R1624(6/8)MN1 Change History Version 1.1 (March 2000) * First copy. * Based on the 1.02ver 128/144Mbit RDRAMs base RIMM Datasheet -Only 4/6/8d RIMM are using 6layer PCB. Page 0 Version 1.1 Mar. 2001 MR16R1624(6/8)MN1 MR18R1624(6/8)MN1

Contextual Info: MR16R1622 4/8/G AF MR18R1622(4/8/G)AF Preliminary Change History Version 1.1 (August 2001) * First copy. * Based on the 1.0ver Rambus 256/288Mbit RDRAMs base RIMM Datasheet Version 1.2 (February 2002) * Add 1066-35 binning Version 1.3 (April 2002) * Add 800-40 and 1066-32 binning

Contextual Info: MR16R1622 4/8/G AF0 MR18R1622(4/8/G)AF0 Change History Version 1.1 (August 2001) * First copy. * Based on the 1.0ver Rambus 256/288Mbit RDRAMs base RIMM Datasheet Page 0 Version 1.1 Aug. 2001 MR16R1622(4/8/G)AF0 MR18R1622(4/8/G)AF0 (16Mx16)*2(4/8/16)pcs RIMMTM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V

ck7 marking code

Abstract: marking code B49 a35 marking code
Contextual Info: MR16R0824 6/8/C/G AN1 MR18R0824(6/8/C/G)AN1 4/6/8/12/16d RIMMTM Module with 128Mb RDRAMs 4/6/8/12/16d RIMMTM Module with 144Mb RDRAMs Revision History Version 1.0 (August 1999) - Preliminary - First copy. - Based on the Rambus RIMM Datasheet Rev.1.0. Version 1.01 (October 1999)

MR18R0828BN1-CK8

Abstract: MR18R0824 A84 marking code
Contextual Info: MR16R0824 6/8/C/G BN1 MR18R0824(6/8/C/G)BN1 Change History Version 1.1 (October 2000) - First copy. - Based on the 1.1 ver. 128/144Mbit RDRAMs(A-die) base RIMM Datasheet. Version 1.1a (October 2000) * Update based on the latest Rambus RIMM Datasheet Page No.

Contextual Info: MD16R1624 8/G DF0 - CN1 for 1200MHz MD18R1624(8/G)DF0 - CN1 for 1200MHz 32 Bit RIMM Module Change History Version 1.0 (January 2003) * First copy. * Based on Version 1.0 (July 2002) 256/288Mbit D-die 32 bit RIMM Datasheet Version 1.0 January 2003 MD16R1624(8/G)DF0 - CN1 for 1200MHz

rdram

Abstract: RDRAM 32 Bit RIMM4800 Module marking A97 A101 A102 A103 A104 B100 B101 B102
Contextual Info: Advance Information 32 Bit RIMM 4800 Module with 256/288Mb RDRAM® Devices Overview Features The 32 Bit RIMM®4800 module is a general purpose highperformance line of memory modules suitable for use in a broad range of applications including computer memory,

745 B36 diode

Abstract: micron sensor spd 357 RM01 MT8VR6416A
Contextual Info: PRELIMINARY‡ 32, 64, 128 MEG x 16/18 RAMBUS RIMM MODULES RAMBUS RIMM MODULE MT4VR3216A, MT4VR3218A, MT8VR6416A, MT8VR6418A, MT16VR12816A, MT16VR12818A For the latest data sheet revisions, please refer to the Micron Web site: www.micronsemi.com/datasheets/modds.html

Contextual Info: K4R571669D/K4R881869D for 1200MHz Direct RDRAM 256/288Mbit RDRAM D-die for 1200MHz 512K x 16/18bit x 32s banks Direct RDRAMTM Version 1.4 May 2003 Page -1 Version 1.4 May 2003 K4R571669D/K4R881869D for 1200MHz Direct RDRAM™ Change History Version 1.4( May 2003)

NEC obsolete parts

Abstract: NEC rambus dram NEC obsolete parts ic NEC RDRAM 1994 synchronous dram nec RDRAM CONCURRENT Rambus ASIC Cell rambus channel direct rdram rambus 1200 concurrent rdram
Contextual Info: ARCHITECTURAL OVERVIEW This document was created with FrameMaker 4.0.2 Document No. 60291  Copyright 1994 NEC Electronics Inc. All rights reserved. No part of this document may be reproduced, stored in a retrieval system, or transmitted, in any form or by any means without the prior written permission

0120d

Contextual Info: RDRAM 512Mb 1024Kx16/18x32s Advance Information Overview The RDRAM device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.

code A106

Abstract: MD16R1628EG0-CN1 MD16R1628EG0-CT9 MD16R162GEG0-CN1 MD16R162GEG0-CT9 MD16R1624EG0-CM8 MD16R1624EG0-CN1 MD16R1624EG0-CT9 MD16R1628EG0-CM8 serial presence detect samsung 2010
Contextual Info: MD16R1624 8/G EG0 Change History Version 1.0 (January 2004) * First copy. * Based on version 1.0 (July 2002) 256Mbit D-die 32 Bit RIMM Module Datasheet Version 1.0 Jan. 2004 MD16R1624(8/G)EG0 (16Mx16)*4(8/16)pcs 32 Bit RIMM Module based on 256Mb E-die, 32s banks,16K/32ms Ref, 2.5V

code A106

Abstract: MD18R3268AG0-CM8 MD18R3268AG0-CN1 MD18R3268AG0-CT9 MD18R326GAG0-CM8 MD18R326GAG0-CN1 MD18R326GAG0-CT9 serial presence detect samsung 2010 MARKING A106
Contextual Info: Preliminary MD18R3268 G AG0 Change History Version 0.1 (Sept. 2003)- Preliminary * First copy. * Based on version 1.0 (July 2002) 256/288Mbit D-die 32 Bit RIMM Module Datasheet Version 0.1 Sept. 2003 MD18R3268(G)AG0 Preliminary (32Mx18)*8(16)pcs 32 Bit RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V

a106 diode

Abstract: code A106 a105 a114 marking A93 transistor marking A21 a105 transistor A116 diode a74 marking code B92 02 diode diode A106
Contextual Info: MD18R3268 G AG0 Preliminary 32 Bit RIMM Module Change History Version 0.1 (Sept. 2003)- Preliminary * First copy. * Based on version 1.0 (July 2002) 256/288Mbit D-die 32 bit RIMM Datasheet Version 0.1 Sept. 2003 Preliminary 32 Bit RIMM® Module MD18R3268(G)AG0

MPACT 2

Abstract: MPACT LG Mpact gm90c701q Concurrent RDRAM AD1845 LG concurrent RDRAM Chromatic Research concurrent rdram LG concurrent RDRAM 72
Contextual Info: LG Sem icon Co., Ltd. Mpact /3ooo media processor G M 90C701Q 1. G e n e r a l D e s c r ip tio n s LG Semicon’s M pact™ /3000 m edia processor GM 90C701Q reaches a new level o f multimedia integration for W indows 95 based PCs by leveraging architectural advances in VLIW, SIMD

DDR RAM 512M

Abstract: ELPIDA mobile DDR TSOP II elpida ect-ts-1942 Elpida Memory DDR2-533 DDR2-667 DDR2-800 PC2-5300 PC2-6400
Contextual Info: Part Number Decoder - 1 Part Number Decoder This document is intended to give customers understanding of the Elpida part numbering system. For detailed line-up about the individual products, please consult Elpida sales representatives. Elpida Memory, Inc. 2002-2006

serial presence detect samsung 2010

Contextual Info: MD18R3268 G AG0 Change History Version 0.1 (Sept. 2003)- Preliminary * First copy. * Based on version 1.0 (July 2002) 256/288Mbit D-die 32 Bit RIMM Module Datasheet Version 1.0 (Feb. 2004) * Eliminate “Preliminary” Version 1.0 Feb. 2004 MD18R3268(G)AG0

K4R761869A

Abstract: K4R761869A-FCM8 K4R761869A-FCT9
Contextual Info: Direct RDRAM K4R761869A 576Mbit RDRAM A-die 1M x 18bit x 32s banks Direct RDRAMTM Version 1.4 September 2003 Page -1 Version 1.4 Sept. 2003 Direct RDRAM™ K4R761869A Change History Version 1.4( Sept. 2003) - First Copy ( Version 1.4 is named to unify the version of component and device operation datasheets)