RDRAM Search Results

Ba 33 bco

Contextual Info: Direct RDRAM RAMBUS TM 32/36-M bit 256K x16/18x8d ADVANCE INFORMATION O verview The R am bus Direct RDRAM is a general p u rp o se high-perform ance m em ory device suitable for use in a broad range of applications including com puter mem ory, graphics, video, an d any other application

Contextual Info: E2G1059-18-74 O K I Semiconductor This version: Jul. 1998 MSM5716C50/M SM 5718C50/ M D5764802 16M/18Mb 2M x 8/9 & 64Mb (8M x 8) Concurrent RDRAM DESCRIPTION The 1 6 /1 8 /64-M egabit C oncurrent Ram bus DRAMs (RDRAM ) are extrem ely hi'ghVspeed CMOS DRAMs organized as 2M or 8 M w ords by 8 or 9 bits. They are capable of bursting- linlimi ted

Contextual Info: MR16R0824 6/8/C/G AN1 RAMBUS MODULE SERIAL PRESENCE DETECT RIMM SPD Specification based on 128M RDRAM(B-die, 32s banks) Version 1.1 October 2000 Change History Version 1.1 (Oct. ′00) Based on the Samsung 128M RDRAM (A-die) SPD Specification 1.02 version.

K4R571669A-FCK8

Abstract: K4R881869A-FCK8 K4R881869A-FCM8 K4R881869A-FCM9 K4R881869A-FCN9 K4R881869A-FCT9
Contextual Info: Direct RDRAM K4R571669A/K4R881869A 256/288Mbit RDRAM A-die 512K x 16/18bit x 32s banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 Direct RDRAM™ K4R571669A/K4R881869A Change History Version 1.11( September 2001) - Preliminary

K4R271669F

Contextual Info: Direct RDRAM K4R271669F 128Mbit RDRAM F-die 256K x 16 bit x 32s Banks Direct RDRAMTM Version 1.41 January 2004 Page -1 Version 1.41 Jan. 2004 Direct RDRAM™ K4R271669F Change History Version 1.4 ( September 2003 ) - First Copy ( Version 1.4 is named to unify the version of component and device operation datasheets)

K4R271669E

Contextual Info: Preliminary Direct RDRAM K4R271669E 128Mbit RDRAM E-die 256K x 16 bit x 32s Banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 Preliminary Direct RDRAM™ K4R271669E Change History Version 1.4 ( July 2002 ) - Preliminary - First Copy ( Version 1.4 is named to unify the version of component and device operation datasheets)

K8D3216UBC-pi07

Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Contextual Info: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM

K4R271669E-RcCS8

Abstract: K4R271669E
Contextual Info: Direct RDRAM K4R271669E 128Mbit RDRAM E-die 256K x 16 bit x 32s Banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 Direct RDRAM™ K4R271669E Change History Version 1.4 ( July 2002 ) - First Copy ( Version 1.4 is named to unify the version of component and device operation datasheets)

HYR1612820G-653

Abstract: HYR1612820G-745 HYR1612820G-840 HYR1612820G-845 HYR1812820G-653 HYR1812820G-745 HYR1812820G-845 INFINEON, B20 A17 INFINEON marking a86
Contextual Info: HYR 16xx20G/HYR 18xx20G Rambus RIMM Modules Direct RDRAM RIMM Modules with 144 Mbit RDRAMs Overview The Direct Rambus RIMM™ module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including computer memory, personal computers,

hyundai rdram

Abstract: REF05
Contextual Info: HYRDU64164 / HYRDU72184 Series 64/72Mbit Direct RDRAM • HYUNDAI Advanced Information O verview The Direct Rambus™ DRAM Direct RDRAM™ is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and

HR128E08B

Abstract: HR128E08C HR128E08D HR128E08E HR128N08C HR128N08D HR128N08E
Contextual Info: 128 MB RIMMTM Module with 128/144Mb RDRAMs Direct Rambus RIMM™ Memory Module Specification GENERAL DESCRIPTION This document outlines specifications for HCD’s Direct Rambus RIMM Module which consists of 128Mb / 144Mb Direct Rambus DRAM devices. HCD supports applications with 600, 700 and 800 MHz speed grades in both ECC and nonECC modules.

da53

Abstract: HY5R128HC745 HY5R128HC840 HY5R128HC845 HY5R144HC653 HY5R144HC745 HY5R144HC840 HY5R144HC845 HY5R144HM745 HY5R144HM845
Contextual Info: Direct RDRAM 128/144Mbit 256Kx16/18x32s Preliminary Overview The Rambus Direct RDRAM™ is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and

144MB

Abstract: B641 High Connection Density
Contextual Info: 64MB SO-RIMMTM Module with 128/144 Mb RDRAMs Direct Rambus SO-RIMM™ Memory Module Specification GENERAL DESCRIPTION This document outlines specifications for HCD’s Direct Rambus SO-RIMM Module which consists of 128Mb / 144Mb Direct Rambus DRAM devices. HCD supports applications with 600, 700 and 800 MHz speed grades in both ECC and

da53

Abstract: uPD488385FB-C60-53-BF1 uPD488385FB-C80-40-BF1 uPD488385FB-C80-45-BF1 uPD488385FB-C80-50-BF1
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD488385 72 M-bit 256K x 18 x 16d Direct Rambus DRAM Description The Direct Rambus DRAM (Direct RDRAM) is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where

SCK 183

Abstract: 128Mx16
Contextual Info: UG7128R16 8 16U6J(7J) Data sheets can be downloaded at www.unigen.com 256M Bytes (128M x 16/18 bits) RAMBUS RIMM MODULE 184 Pin RIMM based on 16 pcs 8M x 16/18 RDRAM & 4K Refresh 128M x 16 bits, 128M x 18bits w/ECC, 800MHz and 600MHz GENERAL DESCRIPTION PIN ASSIGNMENT (Front View)

Contextual Info: TOSHIBA cIOti7 2 4 a 0 0 2 ô b fl2 131 TC59R1809VK/HK PRELIMINARY 2,097,152 WORD x 9-BIT RAMBUS DYNAMIC RAM Description TheTC59R1809VK/HK Rambus Dynamic RAM RDRAM is a next-generation high-speed CMOS DRAM with a 2,097,152 x 9-bit organization and built-in slave logic. The 36,864 sense amps of the DRAM core are used as cache to achieve data

Contextual Info: • TOSHIBA TOTTEMfl G G S S Q S D MbM ■ TOSE TC59R1609VK TOSHIBA L06 IC/MFM0RY bSE » SILICON GATE CMOS 18 Mbit RDRAM t a r g e t DESCRIPTION The TC59R1609VK is a new generation ultra high speed CMOS Rambus™ DRAM organized as 2MX9. The TC59R1609VK uses advanced circuit design techniques with standard CMOS process technology. It

direct rdram rambus 1200

Contextual Info: 800/1066/1200 MHz RDRAM£ 256/288 Mb 512Kx16/18x32s Advance Information Overview The RDRAM£ device is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high

da53

Abstract: DB26 0195c Outline T39
Contextual Info: 1066 MHz RDRAMâ 256/288 Mb 512Kx16/18x32s Advance Information Overview • The Rambusâ DRAM (RDRAMâ) device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other

da53

Abstract: DB26
Contextual Info: 1066 MHz RDRAMâ 512/576 Mb 8Mx16/18x4i Advance Information Overview • The 1066 MHz Rambus DRAM (RDRAMâ) is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any

Contextual Info: TOSHIBA TENTATIVE TC59R7218XB TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Overview The Direct Rambus DRAM Direct RDRAMTM ¡s a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video,

ibm rdram

Contextual Info: IB M 0 7 1 2 1 6 1 K U 1A 128Mb Direct RDRAM Datasheet Advance Features • Data Mask for Byte W rite Control • Pipelined Memory Accesses • 16 bit Data I/O Width • 2x16 Dependent Banks w / 1KByte Page Size - Up to 4 Simultaneous Transactions • Independent Row, Column & Data Busses

DA30F

Abstract: TFR 600M
Contextual Info: IB M 0 7 1 2 1 6 1 K U 1A 128Mb Direct RDRAM Advance Features • Data Mask for Byte W rite Control • Pipelined Memory Accesses • 16 bit Data I/O Width • 2x16 Dependent Banks w / 1KByte Page Size - Up to 4 Simultaneous Transactions • Independent Row, Column & Data Busses

RDRAM Clock

Abstract: RR15
Contextual Info: Direct RDRAM 64/72-Mbit 256Kx16/18x16d SIEM EN S O I ADVANCE INFORMATION Overview n Uses R am bus Signaling Level (RSL) for up to 800MHz operation Preliminary Data The R am bus Direct RDRAM™ is a general p u rp o se high-perform ance m em ory device suitable for u se in a