DIODE SB360 Search Results

SR506 Diode

Abstract: diode 6A 1000v SM4007 Diode Diode SR360 diode her307
Contextual Info: Room I, Floor 4, 13 Yip Fung Street, Hong Kong Tel: +86 769 8118 8110 or +852 8106 7033 Fax: +852 8106 7099 Kingtronics Diode & Rectifier List Diode Rectifier Diode Rectifier M7 SMD4001-4007 Diode SR560 (5A 60V) Bulk RoHS. DO-27 S1A -S1M Diode UF4004 (1А 400V) Bulk RoHS. DO-41

SB360 diode

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD SB360 Preliminary DIODE 3.0A SCHOTTKY BARRIER RECTIFIER  DESCRIPTION The UTC SB360 is 3.0A schottky barrier rectifier. it uses UTC’s advanced technology to provide customers with high current capability and low forward voltage drop, etc.

SB360 diode

Abstract: SB360G sb360 DIODE schottky
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD SB360 Preliminary DIODE 3.0A SCHOTTKY BARRIER RECTIFIER „ 1 DESCRIPTION The UTC SB360 is 3.0A schottky barrier rectifier. it uses UTC’s advanced technology to provide customers with high current capability and low forward voltage drop, etc.

DI108S

Abstract: SK5100 CP2506 sb5200 SB840
Contextual Info: Diode & Rectifiers Diode & Rectifiers MERITEK RoHS TABLE OF CONTENT • PLASTIC PASSIVATED JUNCTION RECTIFIER o General Purpose

Contextual Info: UNISONICTECHNOLOGIESCO., LTD SB360 Preliminary DIODE 3 .0 A SCH OT T K Y BARRI ER RECT I FI ER ̈ 1 DESCRI PT I ON The UTC SB360 is 3.0A schottky barrier rectifier. it uses UTC’s advanced technology to provide customers with high current capability and low forward voltage drop, etc.

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

SB360 diode

Abstract: SB320-SB3100 RS-296-E SB3100 SB320 SB330 SB340 SB350 SB360 SB380
Contextual Info: SB320 – SB3100 WTE POWER SEMICONDUCTORS Pb 3.0A SCHOTTKY BARRIER DIODE Features ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! High Current Capability A B ! Low Power Loss, High Efficiency ! High Surge Current Capability

motorola diode cross reference

Abstract: replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"
Contextual Info: CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA IR 1N5817 SANKEN G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 MBR330 MBR340 MBR350 MBR360 MBR390 MBR3100 MBRS120LT3 MBRS130LT3 MBRS130T3 MBRS140T3 MBRS190T3

Contextual Info: 产品规格书 Specification GD SB320S～GD SB360S GOODARK型号 构造 Construction: 用途 接受印栏 ： 金属结合型二极管 请记入贵公司的名称接受日期、责任者人名。 Schottky Barrier Diode : 高速整流用 Application : For High speed Rectifier

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

mur1650

Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
Contextual Info: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and

Contextual Info: SB320 – SB3100 WTE POWER SEMICONDUCTORS Pb 3.0A SCHOTTKY BARRIER DIODE Features  Schottky Barrier Chip  Guard Ring Die Construction for Transient Protection  High Current Capability A B  Low Power Loss, High Efficiency  High Surge Current Capability

FE16B

Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
Contextual Info: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —

Contextual Info: Comchip Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB320-G Thru. SB3100-G Voltage: 20 to 100 V Current: 3.0 A RoHS Device DO-201AD Features -Low drop down voltage. -Metal-Semiconductor junction with guard ring 1.0 25.4 Min. 0.210(5.3) 0.189(4.8)

PK MUR 460

Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
Contextual Info: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,

MR2835S equivalent

Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Contextual Info: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

equivalent components of diode 1N5399

Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
Contextual Info: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

Contextual Info: SB320 – SB3100 3.0A SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features  Schottky Barrier Chip     Guard Ring for Transient and ESD Protection Surge Overload Rating to 80A Peak Low Power Loss, High Efficiency Ideally Suited for Use in High Frequency

Contextual Info: Comchip ESD Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB320E-G Thru. SB3100E-G Voltage: 20 to 100 V Current: 3.0 A RoHS Device DO-201AD Features -Low drop down voltage. -3.0A operation at TA=75°C with no thermal runaway. -For use in low voltage, high frequency invertors free

SB320E-G

Abstract: SB345E-G SB350E-G SB360E-G SB380E-G SB3100E-G
Contextual Info: Comchip ESD Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB320E-G Thru. SB3100E-G Voltage: 20 to 100 V Current: 3.0 A RoHS Device Features DO-201AD -Low drop down voltage. -3.0A operation at TA=75°C with no thermal runaway. -For use in low voltage, high frequency invertors free

Contextual Info: Comchip ESD Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB320E-G Thru. SB3100E-G Voltage: 20 to 100 V Current: 3.0 A RoHS Device Features DO-201AD -Low drop down voltage. -3.0A operation at TA=75°C with no thermal runaway. -For use in low voltage, high frequency invertors free

transistor 2N5952

Abstract: transistor KSP44 bc558 zener diode reference guide 1n967b schottky 1n5248 KBL BRIDGE RECTIFIER 005 FYPF2004DN BAV99Wt1g BC337
Contextual Info: Small Signal Transistors & Diodes Selection Guide Fairchild Semiconductor, a long-time, leading global supplier of high performance semiconductors, offers a broad range of small signal transistor and diode products—from JFETs, Schottky, and rectifiers, to RF transistors, TRIACs and more. You will not only find the performance that you want, you will also

Lite-On Power Semiconductor

Abstract: VISHAY diode MARKING er diode sb340
Contextual Info: SB320-SB360 Vishay Lite-On Power Semiconductor 3.0A Schottky Barrier Rectifiers Features • Schottky barrier chip • Guard ring die construction for transient protection • High surge capability • Low power loss, high efficiency • Surge overload rating to 80A peak

SB330

Contextual Info: SB320, SB330, SB340, SB350, SB360 www.vishay.com Vishay General Semiconductor Schottky Barrier Plastic Rectifier FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High forward surge capability