Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DIODE BY 252 Search Results

    DIODE BY 252 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CUZ20V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, USC Datasheet
    CUZ24V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Datasheet
    CEZ5V6
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, ESC Datasheet

    DIODE BY 252 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: TVS Diode Axial Leaded – 30000W > 30KPA series 30KPA Series RoHS Description Uni-directional The 30KPA Series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events.


    Original
    0000W 30KPA E230531 0000W 30KPAxxxXX 30KPAxxxXX-B RS-296E DM-0016 PDF

    DO213-AB color band

    Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 5 October 2006. MIL-PRF-19500/115L 5 July 2006 SUPERSEDING MIL-PRF-19500/115K 16 August 2004 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR, TYPES


    Original
    MIL-PRF-19500/115L MIL-PRF-19500/115K 1N3821A 1N3828A, 1N3016B 1N3051B, 1N3821A-1 1N3828A-1, 1N3016B-1 1N3051B-1, DO213-AB color band PDF

    Contextual Info: ICP Test Report Certification Packet Company name: Suzhou Good-Ark Electronics Co.,Ltd. Product Series: A-405R-1 Series Product #: Axial OJ Diode Issue Date: Sep 1 , 2012 It is hereby certified by Suzhou Goodark Electronics CO.,Ltd. that there is neither RoHS EU Directive


    Original
    2002/95/EC PDF

    PVI1050

    Abstract: PVI5050 PVI5080
    Contextual Info: Replaced by PVI-N Data Sheet No. PD 10029-G Series PVI Photovoltaic Isolator 5-10 Volt Output General Description Features The PVI Photovoltaic Isolator generates an electrically isolated DC voltage upon receipt of a DC input signal. The input of the PVI is a light-emitting diode


    Original
    10029-G PVI1050 1200VDC PVI5050 PVI5080 PDF

    Contextual Info: Bulletin I27117 rev. C 03/02 SERIES IRK.136, .142, .162 THYRISTOR/DIODE and THYRISTOR/THYRISTOR NEW INT-A-pak Power Modules Features 135 A 140 A 160 A High Voltage Electrically Isolated by DBC Ceramic Al 2 O 3 3500 V RMS Isolating Voltage Industrial Standard Package


    Original
    I27117 E78996 08-Mar-07 PDF

    ge 142

    Abstract: IRK E78996 701819-303ac I27900 irkt 40
    Contextual Info: Bulletin I27117 rev. C 03/02 SERIES IRK.136, .142, .162 THYRISTOR/DIODE and THYRISTOR/THYRISTOR NEW INT-A-pak Power Modules Features 135 A 140 A 160 A High Voltage Electrically Isolated by DBC Ceramic Al 2 O 3 3500 V RMS Isolating Voltage Industrial Standard Package


    Original
    I27117 E78996 ge 142 IRK E78996 701819-303ac I27900 irkt 40 PDF

    Contextual Info: ICP Test Report Certification Packet Company name: Suzhou Good-Ark Electronics Co.,Ltd. Product Series: DO-15DO-41DO-201AD、R-3、R-6 Series Product #: Axial OJ Diode Issue Date: Sep 1 , 2012 It is hereby certified by Suzhou Goodark Electronics CO.,Ltd. that there is neither RoHS EU Directive


    Original
    DO-15ã DO-41ã DO-201ADã 2002/95/EC PDF

    Contextual Info: R1243x Series 2A∗ 30V Input PWM Step-down DC/DC Converter The R1243x Series are 30V input, CMOS-based PWM step-down DC/DC converters featuring 2A∗ output current. R1243x includes a soft start circuit and a latch or fold-back protection circuit. By simply using an inductor, resistors, a diode, and capacitors as external


    Original
    R1243x R1243x Room403, Room109, 10F-1, PDF

    JK thyristor

    Contextual Info: SEMiX 252GB126HDs power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT  .  * 1 .  ')0 * 145   ()*-


    Original
    252GB126HDs JK thyristor PDF

    SiHFU014

    Abstract: IRFR014 S10 diode IRFU014 SiHFR014 SiHFR014-E3
    Contextual Info: IRFR014, IRFU014, SiHFR014, SiHFU014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) VGS = 10 V 0.20 Qg (Max.) (nC) 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single D DPAK (TO-252) Dynamic dV/dt Rating Surface Mount (IRFR014, SiHFR014)


    Original
    IRFR014, IRFU014, SiHFR014 SiHFU014 O-252) 2002/95/EC IRFR014 S10 diode IRFU014 SiHFR014-E3 PDF

    Contextual Info: SEMiX 252GB176HDs power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT  -  * + 0 -  '* + 045   )*+,


    Original
    252GB176HDs PDF

    irfuc20

    Abstract: IRFRC20PBF IRFRC20 SiHFRC20 SiHFRC20-E3 SiHFUC20 IRFRC20TRLPBF IRFRC20TRPBF
    Contextual Info: IRFRC20, IRFUC20, SiHFRC20, SiHFUC20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 600 RDS(on) (Ω) VGS = 10 V 4.4 Qg (Max.) (nC) 18 Qgs (nC) 3.0 Qgd (nC) 8.9 Configuration Single D DPAK (TO-252) IPAK (TO-251) Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original
    IRFRC20, IRFUC20, SiHFRC20 SiHFUC20 O-252) O-251) irfuc20 IRFRC20PBF IRFRC20 SiHFRC20-E3 IRFRC20TRLPBF IRFRC20TRPBF PDF

    IRFR9220

    Abstract: SiHFU9220 irfu9220 SiHFR9220 SiHFR9220-E3
    Contextual Info: IRFR9220, IRFU9220, SiHFR9220, SiHFU9220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 200 RDS(on) (Ω) VGS = - 10 V 1.5 Qg (Max.) (nC) 20 Qgs (nC) 3.3 Qgd (nC) 11 Configuration Single S DPAK (TO-252) IPAK (TO-251) Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original
    IRFR9220, IRFU9220, SiHFR9220 SiHFU9220 O-252) O-251) IRFUFU9220, IRFR9220 irfu9220 SiHFR9220-E3 PDF

    IRFR120 siliconix

    Abstract: IRFR120 SiHFR120 IRFR120PBF IRFU120 SiHFR120-E3 marking 31 77 diode
    Contextual Info: IRFR120, IRFU120, SiHFR120, SiHFU120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) (Ω) VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single D DPAK (TO-252) Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original
    IRFR120, IRFU120, SiHFR120 SiHFU120 O-252) O-251) IRFR120 siliconix IRFR120 IRFR120PBF IRFU120 SiHFR120-E3 marking 31 77 diode PDF

    Contextual Info: IRFR010, SiHFR010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 50 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 10 Qgs (nC) 2.6 Qgd (nC) 4.8 Configuration D DPAK (TO-252) G G Low Drive Current Surface Mount Fast Switching Ease of Paralleling


    Original
    IRFR010, SiHFR010 O-252) 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    IRFRC20

    Abstract: IRFUC20 SiHFRC20 SiHFRC20-E3 SiHFRC20-GE3 SiHFRC20TRL-GE3 SiHFUC20
    Contextual Info: IRFRC20, IRFUC20, SiHFRC20, SiHFUC20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 600 RDS(on) (Ω) VGS = 10 V 4.4 Qg (Max.) (nC) 18 Qgs (nC) 3.0 Qgd (nC) 8.9 Configuration Single D DPAK (TO-252) DESCRIPTION IPAK (TO-251) D D G G • Halogen-free According to IEC 61249-2-21


    Original
    IRFRC20, IRFUC20, SiHFRC20 SiHFUC20 O-252) O-251) IRFRC20 IRFUC20 SiHFRC20-E3 SiHFRC20-GE3 SiHFRC20TRL-GE3 PDF

    irfu310

    Abstract: IRFR310 SiHFR310 SiHFR310-E3 SiHFR310-GE3 SiHFR310TRL-GE3 SiHFU310
    Contextual Info: IRFR310, IRFU310, SiHFR310, SiHFU310 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 400 RDS(on) (Ω) VGS = 10 V 3.6 Qg (Max.) (nC) 12 Qgs (nC) 1.9 Qgd (nC) 6.5 Configuration Single DPAK (TO-252) D IPAK (TO-251) DESCRIPTION D D G G • Halogen-free According to IEC 61249-2-21


    Original
    IRFR310, IRFU310, SiHFR310 SiHFU310 O-252) O-251) irfu310 IRFR310 SiHFR310-E3 SiHFR310-GE3 SiHFR310TRL-GE3 PDF

    IRFR9220

    Abstract: irfu9220 SiHFR9220 SiHFR9220-E3 SiHFU9220
    Contextual Info: IRFR9220, IRFU9220, SiHFR9220, SiHFU9220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 200 RDS(on) (Ω) VGS = - 10 V 1.5 Qg (Max.) (nC) 20 Qgs (nC) 3.3 Qgd (nC) 11 Configuration Single S DPAK (TO-252) IPAK (TO-251) • • • • • •


    Original
    IRFR9220, IRFU9220, SiHFR9220 SiHFU9220 O-252) O-251) IRFR9220/SiHFR9220) IRFUFU9220/SiHFU9220) 18-Jul-08 IRFR9220 irfu9220 SiHFR9220-E3 PDF

    Contextual Info: SEMiX 252GB126HD power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT  /  * 2 /  ')1 * 256   ()*.


    Original
    252GB126HD PDF

    IRLR014

    Abstract: IRLU014 SiHLR014 SiHLR014-E3 SiHLR014-GE3 SiHLR014TRL-GE3
    Contextual Info: IRLR014, IRLU014, SiHLR014, SiHLU014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) VGS = 5.0 V 0.20 Qg (Max.) (nC) 8.4 Qgs (nC) 3.5 Qgd (nC) 6.0 Configuration Single D DPAK (TO-252) IPAK (TO-251) DESCRIPTION D D G G • Halogen-free According to IEC 61249-2-21


    Original
    IRLR014, IRLU014, SiHLR014 SiHLU014 O-252) O-251) IRLR014 IRLU014 SiHLR014-E3 SiHLR014-GE3 SiHLR014TRL-GE3 PDF

    SiHFR220-GE3

    Abstract: IRFR220 IRFU220 SiHFR220 SiHFR220-E3
    Contextual Info: IRFR220, IRFU220, SiHFR220, SiHFU220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) (Ω) VGS = 10 V 0.80 Qg (Max.) (nC) 14 Qgs (nC) 3.0 Qgd (nC) 7.9 Configuration Single D DPAK (TO-252) IPAK (TO-251) DESCRIPTION D D G G • Halogen-free According to IEC 61249-2-21


    Original
    IRFR220, IRFU220, SiHFR220 SiHFU220 O-252) O-251) SiHFR220-GE3 IRFR220 IRFU220 SiHFR220-E3 PDF

    Contextual Info: SEMiX 252GB126HDs Absolute Maximum Ratings Symbol Conditions IGBT  .  * 1 .  ')0 * 145   ()*-       # '(00  (20 "   30 * (00 " 600 " 8 (0  .  '() * '0 =   () * ('0 "   30 * '90 " 600 " .  () * '000 "


    Original
    252GB126HDs PDF

    Contextual Info: SEMiX 252GB126HDs Absolute Maximum Ratings Symbol Conditions IGBT  .  * 1 .  ')0 * 156   ()*-       # '(00  (20 "   30 * '40 " 200 " 8 (0  .  '() * '0 =   () * () "   30 * ') " 200 " .  () * '000 "


    Original
    252GB126HDs 60747-1sive PDF

    "Current to Voltage Converter"

    Abstract: SCPI-1995 nanosecond pulsed led EN61326-1 current to voltage converter MIL-PRF-28800F class 4 2520S
    Contextual Info: Complete pulse test of laser diode bars and chips with dual photocurrent measurement channels OPTOELECTRONIC TEST SOLUTIONS Pulsed Laser Diode Test System 2520 The new Model 2520 Pulsed Laser Diode Test System is an integrated, synchronized system for testing laser


    Original
    500ns. 89/336/EEC EN61326-1. MIL-PRF-28800F 238mm 416mm 70lbs) 168mm 241mm 50E-06 "Current to Voltage Converter" SCPI-1995 nanosecond pulsed led EN61326-1 current to voltage converter MIL-PRF-28800F class 4 2520S PDF