DIODE BY 252 Search Results

Diode Motorola 711 2N2905A

Abstract: pin configuration transistor BC547 2N2222 BC237 2N555
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMAD130 MMAD1103 MMAD1105 MMAD1107 MMAD1109 Monolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching

MAD130P

Abstract: 2N1711 solid state BC237 MARKING CODE diode sod123 t3 H3T-B MPS4258 bf244 MSA1022 Bf391 BCY72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Diode Array MMAD1108 Surface Mount Isolated 8–Diode Array This diode array is a multiple diode junction fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching

BY 255 diode

Abstract: DIODE BY 255 rectifier diode do-201 diode do-201
Contextual Info: BY 251.BY 255 Type Repetitive peak reverse voltage Surge peak reverse voltage Max. reverse recovery time Max. forward voltage IF = - A IR = - A IRR = - A Axial lead diode Standard silicon rectifier diodes BY 251.BY 255 Forward Current: 3 A Reverse Voltage: 200 to 1300 V

2N643

Abstract: BC237 MARKING DP SOT-363 DO204AA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair

BC237

Abstract: MMBD2005T1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair

marking dp sot363

Abstract: BC237 transistor BF245 A marking A5 sot363 2N2222A plastic bc849 MMBD1010LT1 bf245 equivalent marking code a5 sot363
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair

2N301

Abstract: BC237 5111 sot-23 BC547 sot package sot-23 2N5670 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair

BC237

Abstract: msc2295 MPS2369 equivalent BC547 sot package sot-23 MMBD1000
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste

BC237

Abstract: MPSA06 346
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste

DIODE BZX

Abstract: BZX5V1 BZX55C6V2 spice model zener BZX 55c 5v1 BZX30 diode zener 5v1 55c MODEL ZENER 5V1 diode zener 3v6 bzx 55c Zener diode bzx diode zener BZX 55C
Contextual Info: BZX55_PSpice VISHAY Vishay Semiconductors BZX55 Spice Parameters BZX55C3V6 BZX55C5V1 * Technology: DISCRETE DEVICE * Device: Zener Diode BZX 55C 3V6 * Type: Typical nom * Model established: 12.11.1996, by S.Reuter, TM1iC63-HN * Wafer: * Remarks: Macro model

Contextual Info: TVS Diode Axial Leaded – 30000W > 30KPA series 30KPA Series RoHS Description Uni-directional The 30KPA Series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events.

453gb12e4s

Abstract: SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c
Contextual Info: Application Note AN-9001 Revision: 01 Issue Date: 2009-03-01 Prepared by: Dr. Arendt Wintrich Key Words: IGBT, Trench4, Switching Behaviour, Cross Reference IGBT4 and free wheeling diode CAL4 in IGBT modules General properties . 1

Diode P600 equivalent

Contextual Info: TVS Diode Axial Leaded – 15000W > 15KPA series 15KPA Series RoHS Description The 15KPA Series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events. Uni-directional

CMPD7000

Abstract: transistor C5C C5c SOT-23
Contextual Info: Central Central TM TM Semiconductor SemiconductorCorp. Corp. CMPD7000 DUAL SILICON SWITCHING DIODE SERIES CONNECTION DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD7000 type is an ultra-high speed silicon switching diodes manufactured by the epitaxial planar process, in an epoxy molded

zener diode 1NU 9F

Abstract: diode 1NU DLA DIODE TOSHIBA diode 1NU 7.1 NH5 Diode Schottky diode TO220 15A 1000V diode 1NU 5.1 diode 1NU 6F 10lc48 GU 1R5
Contextual Info: 2004-3 PRODUCT GUIDE Small and Medium Diodes semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Contents 1. Diode Product Tree 3 2. Selection Guide by Product Categories 4 3. Definitions and Terms 8 4. Symbols and Terms 9 5. Device Characteristics 5.1 General-Purpose Rectifiers:

1N4960 JANTX

Abstract: 1N6637 JANTX 1N4954 1N4954US 1N4996 1N4996US 1N5968 1N5968US 1N5969 1N6632
Contextual Info: INCH POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 12 November 2008. MIL-PRF-19500/356K 12 August 2008 SUPERSEDING MIL-PRF-19500/356J 1 February 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR,

1N6392

Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 24 February 2010. INCH-POUND MIL-PRF-19500/554E 24 November 2009 SUPERSEDING MIL-PRF-19500/554D 25 May 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER,

DO213-AB color band

Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 5 October 2006. MIL-PRF-19500/115L 5 July 2006 SUPERSEDING MIL-PRF-19500/115K 16 August 2004 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR, TYPES

FED-STD-H28 chamfer

Abstract: 1N6304 1N6305 1N6306 DO-203AB
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 18 January 2008. INCH-POUND MIL-PRF-19500/550C 18 October 2007 SUPERSEDING MIL-PRF-19500/550B 20 October 1998 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST-RECOVERY, HIGH CURRENT,

Contextual Info: ICP Test Report Certification Packet Company name: Suzhou Good-Ark Electronics Co.,Ltd. Product Series: A-405R-1 Series Product #: Axial OJ Diode Issue Date: Sep 1 , 2012 It is hereby certified by Suzhou Goodark Electronics CO.,Ltd. that there is neither RoHS EU Directive

IRK E78996 701819-303ac

Abstract: Vishay Thyristor 162/12 I27900 E78996 rectifier module
Contextual Info: Bulletin I27117 rev. C 03/02 SERIES IRK.136, .142, .162 THYRISTOR/DIODE and THYRISTOR/THYRISTOR NEW INT-A-pak Power Modules Features 135 A 140 A 160 A High Voltage Electrically Isolated by DBC Ceramic Al 2 O 3 3500 V RMS Isolating Voltage Industrial Standard Package

28458

Abstract: kp902 RG-11 RSS075P03 9497 n9497
Contextual Info: SPICE PARAMETER RSS075P03 by ROHM TR Div. * RSS075P03 PMOSFET model * Date: 2006/10/04 * This model includes a diode between drain and source. *D G S .SUBCKT RSS075P03 1 2 3 M1 1 2 3 3 MOS_P D1 1 3 DREV .MODEL MOS_P PMOS + LEVEL=3 + L=2.0000E-6

PVI1050

Abstract: PVI5050 PVI5080
Contextual Info: Replaced by PVI-N Data Sheet No. PD 10029-G Series PVI Photovoltaic Isolator 5-10 Volt Output General Description Features The PVI Photovoltaic Isolator generates an electrically isolated DC voltage upon receipt of a DC input signal. The input of the PVI is a light-emitting diode

Contextual Info: Bulletin I27117 rev. C 03/02 SERIES IRK.136, .142, .162 THYRISTOR/DIODE and THYRISTOR/THYRISTOR NEW INT-A-pak Power Modules Features 135 A 140 A 160 A High Voltage Electrically Isolated by DBC Ceramic Al 2 O 3 3500 V RMS Isolating Voltage Industrial Standard Package