DIODE BY 226 Search Results

D757

Abstract: 227G 555D
Contextual Info: BY 226G, BY 227G, BY 228G power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter *0 Axial lead diode Standard silicon rectifier diodes BY 226G, BY 227G, BY 228G Forward Current: 3 A Reverse Voltage: 450 to 1500 V

N81 diode

Abstract: 228S
Contextual Info: BY 226S, BY 227S, BY 228S power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter .3 Axial lead diode Standard silicon rectifier diodes BY 226S, BY 227S, BY 228S Forward Current: 1,5 A Reverse Voltage: 450 to 1500 V

MAD130P

Abstract: 2N1711 solid state BC237 MARKING CODE diode sod123 t3 H3T-B MPS4258 bf244 MSA1022 Bf391 BCY72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Diode Array MMAD1108 Surface Mount Isolated 8–Diode Array This diode array is a multiple diode junction fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching

mosfet amp ic

Abstract: transistor motorola 236 MGY25N120D
Contextual Info: MOTOROLA Order this document by MGY25N120D/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY25N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264

MGY25N120D

Contextual Info: MOTOROLA Order this document by MGY25N120D/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode MGY25N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264

227G

Abstract: 228g 226G
Contextual Info: BY 226G, BY 227G, BY 228G *0 Axial lead diode Standard silicon rectifier diodes BY 226G, BY 227G, BY 228G Forward Current: 3 A Reverse Voltage: 450 to 1500 V Features                    !"#$ Mechanical Data

Contextual Info: BY 226S, BY 227S, BY 228S .3 Axial lead diode Standard silicon rectifier diodes BY 226S, BY 227S, BY 228S Forward Current: 1,5 A Reverse Voltage: 450 to 1500 V Features                    !"#$ Mechanical Data

Contextual Info: BY 226G, BY 227G, BY 228G *0 Axial lead diode Standard silicon rectifier diodes BY 226G, BY 227G, BY 228G Forward Current: 3 A Reverse Voltage: 450 to 1500 V Features                    !"#$ Mechanical Data

228S

Abstract: BY227S
Contextual Info: BY 226S, BY 227S, BY 228S .3 Axial lead diode Standard silicon rectifier diodes BY 226S, BY 227S, BY 228S Forward Current: 1,5 A Reverse Voltage: 450 to 1500 V Features                    !"#$ Mechanical Data

SDD303KT

Contextual Info: SDD303KT 100mm RECTIFIER DIODE 6000 Volts / 3500 Amp The SDD303 rectifier diode features a nominal 100mm diameter silicon junction design, manufactured by the proven multi-diffusion process. SDD303 is designed specifically for high current surges as appropriate for pulse power applications.

MV104

Abstract: MV104 Motorola "back diode" diode characteristics
Contextual Info: MOTOROLA Order this document by MV104/D SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MV104 This device is designed for FM tuning, general frequency control and tuning, or any top–of–the–line application requiring back–to–back diode configurations for minimum

Contextual Info: HSB0104YP Silicon Schottky Barrier Diode for High Speed Switching REJ03G0597-0200 Previous: ADE-208-730A Rev.2.00 Apr 12, 2005 Features • Can be used for protection of signal-bus lines. • The mounting efficiency has been improved by incorporating two low-loss diode element into a CMPAK-4 package.

Y25n120d

Contextual Info: MOTOROLA O rder this docum ent by M G Y25N120D/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M G Y 25N 120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T O -2 6 4

HSB0104YP

Abstract: PTSP0004ZB-A SC-82
Contextual Info: HSB0104YP Silicon Schottky Barrier Diode for High Speed Switching REJ03G0597-0200 Previous: ADE-208-730A Rev.2.00 Apr 12, 2005 Features • Can be used for protection of signal-bus lines. • The mounting efficiency has been improved by incorporating two low-loss diode element into a CMPAK-4 package.

Contextual Info: UG4M83224RRG T -6 32M Bytes (8M x 32) DRAM 72Pin SIMM based on 4M X 16 W/DIODE General Description Features The UG4M83224RRG(T)-6 is a 8,388,608 bits by 32 SIMM module.The UG4M83224RRG(T)-6 is assembled using 4 pcs of 4Mx16 4K refresh DRAMs in 50 pin TSOP package and with diode

Motorola TO92

Abstract: MPN3404
Contextual Info: MOTOROLA Order this document by MPN3404/D SEMICONDUCTOR TECHNICAL DATA Silicon Pin Diode MPN3404 This device is designed primarily for VHF band switching applications but is also suitable for use in general–purpose switching circuits. It is supplied in a cost–effective

Scans-0016000

Contextual Info: MIL SPECS MME D • D0DD1EIS Q D 3 S 2 B 3 2 ■ MILS I inch -pound ~T M1L-S-19500/226B 11 JUNE 1990 SUPERSEDING MIL-S-19500/226A 22 June 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, GERMANIUM, SWITCHING TYPE 1N3666 1 JAN, JANTX, AND JANTXV This specification Is approved for use by all Depart­

To92 transistor datasheet motorola

Abstract: MGS05N60D zener diode Motorola
Contextual Info: MOTOROLA Order this document by MGS05N60D/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGS05N60D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This IGBT contains a built–in free wheeling diode and a gate protection zener. Fast switching characteristics result in efficient

MGS05N60D

Contextual Info: MOTOROLA Order this document by MGS05N60D/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGS05N60D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This IGBT contains a built–in free wheeling diode and a gate protection zener diodes. Fast switching characteristics result in

Contextual Info: HVM16 Variable Capacitance Diode for FM tuner REJ03G0519-0600 Previous: ADE-208-086E Rev.6.00 Feb 17, 2005 Features • Worked by 8V, suitable for small manufacture sources of electric power. • MPAK package is suitable for high density surface mounting and high speed assembly.

IGBT in TO92 Package

Abstract: MGS13002D
Contextual Info: MOTOROLA Order this document by MGS13002D/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGS13002D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This IGBT contains a built–in free wheeling diode and a gate protection zener diodes. Fast switching characteristics result in

QRB1134

Abstract: QRB1133 LF 833
Contextual Info: REFLECTIVE OBJECT SENSORS OPTOELECTRONICS QRB1133/1134 DESCRIPTION PACKAGE DIMENSIONS — .328 8.33 .420 (1 0.6 7)— Th e QRB1133/1134 consists of an infrared emitting diode and an NPN silicon phototransistor m ounted side by side on a converging optical axis in a black plastic housing.

QPB704

Contextual Info: EO REFLECTIVE OBJECT SENSORS OPTOELECTRONICS OPB703/OPB704/QPB705 .420 10.67 — Th e O P B 703, O P B 704, and O P B 705 consist of an -.3 2 8 (8.33) infrared em itting diode and an NPN silicon .025 (0.64), II phototransistor m ounted side by side on a converging

C 1114 transistor

Contextual Info: FiS REFLECTIVE OBJECT SENSORS OPTOELECTRONICS QRB1113/1114 PACKAGE DIMENSIONS .4 2 0 1 0 .6 7 -J -4 - DESCRIPTIO N Th e QRB1113/1114 consists of an infrared emitting diode -.3 2 8 (8 .3 3 ) a and an NPN silicon phototransistor m ounted side by side on a converging optical axis in a black plastic housing.