DIODE BY 226 Search Results

D757

Abstract: 227G 555D
Contextual Info: BY 226G, BY 227G, BY 228G power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter *0 Axial lead diode Standard silicon rectifier diodes BY 226G, BY 227G, BY 228G Forward Current: 3 A Reverse Voltage: 450 to 1500 V

N81 diode

Abstract: 228S
Contextual Info: BY 226S, BY 227S, BY 228S power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter .3 Axial lead diode Standard silicon rectifier diodes BY 226S, BY 227S, BY 228S Forward Current: 1,5 A Reverse Voltage: 450 to 1500 V

mosfet amp ic

Abstract: transistor motorola 236 MGY25N120D
Contextual Info: MOTOROLA Order this document by MGY25N120D/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY25N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264

227G

Abstract: 228g 226G
Contextual Info: BY 226G, BY 227G, BY 228G *0 Axial lead diode Standard silicon rectifier diodes BY 226G, BY 227G, BY 228G Forward Current: 3 A Reverse Voltage: 450 to 1500 V Features                    !"#$ Mechanical Data

Contextual Info: BY 226S, BY 227S, BY 228S .3 Axial lead diode Standard silicon rectifier diodes BY 226S, BY 227S, BY 228S Forward Current: 1,5 A Reverse Voltage: 450 to 1500 V Features                    !"#$ Mechanical Data

Contextual Info: BY 226G, BY 227G, BY 228G *0 Axial lead diode Standard silicon rectifier diodes BY 226G, BY 227G, BY 228G Forward Current: 3 A Reverse Voltage: 450 to 1500 V Features                    !"#$ Mechanical Data

SDD303KT

Contextual Info: SDD303KT 100mm RECTIFIER DIODE 6000 Volts / 3500 Amp The SDD303 rectifier diode features a nominal 100mm diameter silicon junction design, manufactured by the proven multi-diffusion process. SDD303 is designed specifically for high current surges as appropriate for pulse power applications.

MV104

Abstract: MV104 Motorola "back diode" diode characteristics
Contextual Info: MOTOROLA Order this document by MV104/D SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MV104 This device is designed for FM tuning, general frequency control and tuning, or any top–of–the–line application requiring back–to–back diode configurations for minimum

HSB0104YP

Abstract: PTSP0004ZB-A SC-82
Contextual Info: HSB0104YP Silicon Schottky Barrier Diode for High Speed Switching REJ03G0597-0200 Previous: ADE-208-730A Rev.2.00 Apr 12, 2005 Features • Can be used for protection of signal-bus lines. • The mounting efficiency has been improved by incorporating two low-loss diode element into a CMPAK-4 package.

Contextual Info: UG4M83224RRG T -6 32M Bytes (8M x 32) DRAM 72Pin SIMM based on 4M X 16 W/DIODE General Description Features The UG4M83224RRG(T)-6 is a 8,388,608 bits by 32 SIMM module.The UG4M83224RRG(T)-6 is assembled using 4 pcs of 4Mx16 4K refresh DRAMs in 50 pin TSOP package and with diode

Motorola TO92

Abstract: MPN3404
Contextual Info: MOTOROLA Order this document by MPN3404/D SEMICONDUCTOR TECHNICAL DATA Silicon Pin Diode MPN3404 This device is designed primarily for VHF band switching applications but is also suitable for use in general–purpose switching circuits. It is supplied in a cost–effective

Scans-0016000

Contextual Info: MIL SPECS MME D • D0DD1EIS Q D 3 S 2 B 3 2 ■ MILS I inch -pound ~T M1L-S-19500/226B 11 JUNE 1990 SUPERSEDING MIL-S-19500/226A 22 June 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, GERMANIUM, SWITCHING TYPE 1N3666 1 JAN, JANTX, AND JANTXV This specification Is approved for use by all Depart­

MGS05N60D

Contextual Info: MOTOROLA Order this document by MGS05N60D/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGS05N60D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This IGBT contains a built–in free wheeling diode and a gate protection zener diodes. Fast switching characteristics result in

IGBT in TO92 Package

Abstract: MGS13002D
Contextual Info: MOTOROLA Order this document by MGS13002D/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGS13002D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This IGBT contains a built–in free wheeling diode and a gate protection zener diodes. Fast switching characteristics result in

C 1114 transistor

Contextual Info: FiS REFLECTIVE OBJECT SENSORS OPTOELECTRONICS QRB1113/1114 PACKAGE DIMENSIONS .4 2 0 1 0 .6 7 -J -4 - DESCRIPTIO N Th e QRB1113/1114 consists of an infrared emitting diode -.3 2 8 (8 .3 3 ) a and an NPN silicon phototransistor m ounted side by side on a converging optical axis in a black plastic housing.

5082-2831

Abstract: 5082-2261 5082-2830 5082 schottky 5082-2231 mixer 8-12 GHZ F 5082 5082
Contextual Info: 5082 2231/33 5082 2261/63 5082 2271/72 5082 2276/77 5082 2279/80 5082 2291/92 5082 22 93 /9 4 5082 2830/31 - SCHOTTKY BARRIER DIODE QUADS FOR DOUBLE BALANCED MIXERS - H E W L E T T ^ PACKARD COMPONENTS - - - - - SCHOTTKY BARRIER DIODES & HIGH CONDUCTANCE DIODES

Contextual Info: SK100GH128T  1 #2 3*"     & Absolute Maximum Ratings Symbol Conditions IGBT 0* 4 1 #2 3* * 4 1 !#2 3* *9 !#66 !#6 +  1 76 3* 86 + #66 + #6 4 1 !#2 3* !6 >  1 #2 3* ;7 +  1 76 3* 26 + !26 + 226 + *91 # ' * "  : ! 

Contextual Info: SK50GH128T  1 #2 3*"     & Absolute Maximum Ratings Symbol Conditions IGBT 0* 4 1 #2 3* * 4 1 !#2 3* *8 !#66 76 +  1 76 3* 26 + !66 + #6 4 1 !#2 3* !6 =  1 #2 3* :7 +  1 76 3* 26 + !26 + 226 + *81 # ' * "  9 !  SEMITOP 4

Contextual Info: SK50GH128T  1 #2 3*"     & Absolute Maximum Ratings Symbol Conditions IGBT 0* 4 1 #2 3* * 4 1 !#2 3* *8 !#66 76 +  1 76 3* 26 + !66 + #6 4 1 !#2 3* !6 =  1 #2 3* :7 +  1 76 3* 26 + !26 + 226 + 0  SEMITOP 4 0* 1 :66 0; 0( 9 #6 0;

SK50GH128T

Abstract: IGBT devices made
Contextual Info: SK50GH128T  1 #2 3*"     & Absolute Maximum Ratings Symbol Conditions IGBT 0* 4 1 #2 3* * 4 1 !#2 3* *8 !#66 76 +  1 76 3* 26 + !66 + #6 4 1 !#2 3* !6 =  1 #2 3* :7 +  1 76 3* 26 + !26 + 226 + *81 # ' * "  9 !  SEMITOP 4

SK100GH128T

Contextual Info: SK100GH128T  1 #2 3*"     & Absolute Maximum Ratings Symbol Conditions IGBT 0* 4 1 #2 3* * 4 1 !#2 3* *9 !#66 !#6 +  1 76 3* 86 + #66 + #6 4 1 !#2 3* !6 >  1 #2 3* ;7 +  1 76 3* 26 + !26 + 226 + *91 # ' * "  : ! 

Contextual Info: EO REFLECTIVE OBJECT SENSORS OPTOELECTRONICS QRC1113 PACKAGE DIMENSIONS .420 1 0 .6 7 - DESCRIPTION - .3 2 8 (8.33) .062 R NOM .226 (5.74) 1 150 (3.81) NOM POINT OF OPTIMUM RESPONSE .150(3.81) MIN f .373 (9.47) I FEATURES Phototransistor output High Sensitivity

LF 833

Contextual Info: [*n REFLECTIVE OBJECT SENSORS OPTOELECTRONICS QRC1113 DESCRIPTION PACKAGE DIMENSIONS - .3 2 8 8.33 .420 (10.67)-* .226 (5.74) 1 150 (3.81 ) NOM POINT OF OPTIMUM RESPONSE .150 (3.81 MIN f .373 (9.47) m I -.903 (22.94)-.603(15.32) t .210 (5.33) -ST2178

MAX9031

Contextual Info: 19-2267; Rev 0; 1/02 High-Efficiency, Wide Brightness Range, CCFL Backlight Controller Features ♦ SMBus Slave Address 0x58 for Wide Dimming Range Inverters ♦ Guaranteed 200Hz to 220Hz DPWM Frequency ♦ Externally Synchronizable DPWM Frequency ♦ Lamp-Out Protection with 1s Timeout