MSD6100 Search Results

MSD6100

Contextual Info: MSD6100 silicon Silicon epitaxial dual switching diode, designed for use in high speed switching applications, features high breakdown voltage, low capacitance and space saving common-cathode configuration. 1 2 f CASE 29 3 rj S T Y L E 3: \ ° ° ° (TO-92)

Contextual Info: MSD6100* CASE 29-04, STYLE 3 TO-92 TO-226AA M AXIM U M R A TIN G S (EACH DIODE) Symbol Value Unit Vr 100 Vdc if 200 mA •FMIsurge) 500 mA Power Dissipation T a - 25°C Derate above 25°C P d OI 625 5.0 mW mW/°C Operating and Storage Junction Temperature Range

MSD6100

Abstract: MSD6100G MSD6100RLRA MSD6100RLRAG
Contextual Info: MSD6100 Dual Switching Diode Common Cathode Features • Pb−Free Packages are Available* http://onsemi.com MAXIMUM RATINGS EACH DIODE Rating Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current (Pulse Width = 10 msec) Total Device Dissipation @ TA = 25°C

Contextual Info: MSD6100 Dual Switching Diode Common Cathode Features • Pb−Free Packages are Available* http://onsemi.com MAXIMUM RATINGS EACH DIODE Rating Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current (Pulse Width = 10 msec) Total Device Dissipation @ TA = 25°C

MSD6100-D

Abstract: MSD6100
Contextual Info: ON Semiconductort MSD6100 Dual Switching Diode Common Cathode MAXIMUM RATINGS EACH DIODE Rating Symbol Value Reverse Voltage VR 100 Vdc Recurrent Peak Forward Current IF 200 mAdc IFM(surge) 500 mAdc Peak Forward Surge Current (Pulse Width = 10 µsec) Power Dissipation @ TA = 25°C

MSD6100

Contextual Info: MOTOROLA Order this document by MSD6100/D SEMICONDUCTOR TECHNICAL DATA Dual Switching Diode Common Cathode MSD6100 Anode 1 2 Anode 3 Cathode MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit VR 100 Vdc If 200 mAdc iFM(surge) 500 mAdc Power Dissipation @ T /\ = 25°C

MSD6100

Abstract: DIODE 6AA
Contextual Info: MOTOROLA Order this document by MSD6100/D SEMICONDUCTOR TECHNICAL DATA Dual Switching Diode Common Cathode MSD6100 Anode 1 2 Anode 1 2 3 CASE 29–04, STYLE 3 TO–92 TO–226AA 3 Cathode MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage

MSD6100

Contextual Info: ON Semiconductort MSD6100 Dual Switching Diode Common Cathode MAXIMUM RATINGS EACH DIODE Rating Symbol Value Reverse Voltage VR 100 Vdc Recurrent Peak Forward Current IF 200 mAdc IFM(surge) 500 mAdc Peak Forward Surge Current (Pulse Width = 10 µsec) Unit

BC237

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Switching Diode Common Cathode MSD6100 Anode 1 2 Anode 1 2 3 CASE 29–04, STYLE 3 TO–92 TO–226AA 3 Cathode MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage VR 100 Vdc Recurrent Peak Forward Current

MSD6100

Contextual Info: ON Semiconductort MSD6100 Dual Switching Diode Common Cathode MAXIMUM RATINGS EACH DIODE Rating Symbol Value Reverse Voltage VR 100 Vdc Recurrent Peak Forward Current IF 200 mAdc IFM(surge) 500 mAdc Peak Forward Surge Current (Pulse Width = 10 µsec) Unit

25CC

Contextual Info: MSD6100* CASE 29-04, STYLE 3 TO-92 T0-226AA M AXIM UM RATINGS Symbol Value Unit Reverse Voltage Rating VR 100 Vdc R ecurrent Peak Forw ard C urrent If 200 mA •FM(surge) 500 mA pdm> 625 5.0 mW m W 'T - 5 5 to +135 CC Peak Forward Surge C urrent (Pulse W id th = 10 /¿sec)

MSD6100

Contextual Info: MSD6100* CASE 29-04, STYLE 3 TO-92 TO-226AA M A X IM U M RATINGS (EACH DIODE) Rating Reverse Voltage Symbol Value Unit Vr 100 Vdc if 200 mA •FMisurge) 500 mA 625 5.0 mW mW/°C - 55 to +135 X Recurrent Peak Forward Current Peak Forward Surge Current (Pulse Width = 10 usee)

MSD6100

Contextual Info: ON Semiconductort MSD6100 Dual Switching Diode Common Cathode MAXIMUM RATINGS EACH DIODE Rating Symbol Value Reverse Voltage VR 100 Vdc Recurrent Peak Forward Current IF 200 mAdc IFM(surge) 500 mAdc Peak Forward Surge Current (Pulse Width = 10 µsec) Power Dissipation @ TA = 25°C

A 673 C2 transistor

Abstract: tip41 369D-01
Contextual Info: MJD41C, NJVMJD41CT4G NPN , MJD42C, NJVMJD42CT4G, NJVMJD42CRLG (PNP) Complementary Power Transistors http://onsemi.com DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS

to225a

Abstract: to225aa TO-225AA to225
Contextual Info: MJE170, MJE171, MJE172 PNP , MJE180, MJE181, MJE182 (NPN) Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features • Collector−Emitter Sustaining Voltage −

TO-220AB transistor package

Abstract: bdw42G
Contextual Info: BDW42G - NPN, BDW46G, BDW47G - PNP Darlington Complementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 typ @ IC = 5.0 Adc.

MJD122

Abstract: TIP125-TIP127 mjd122g
Contextual Info: MJD122, NJVMJD122T4G NPN , MJD127 (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features http://onsemi.com SILICON POWER TRANSISTOR 8 AMPERES

NJVMJD31CT4G

Abstract: NJVMJD31T4G
Contextual Info: MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G NPN , MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP) Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. http://onsemi.com

2N6488G

Contextual Info: 2N6487, 2N6488, NPN 2N6490, 2N6491 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. http://onsemi.com Features 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

mje802

Abstract: transistor mje802 MJE703G MJE702 mje800 to225
Contextual Info: MJE700, MJE702, MJE703 PNP - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors http://onsemi.com These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC

TO247 CASE

Contextual Info: MJH6284 NPN , MJH6287 (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for general−purpose amplifier and low−speed switching motor control applications. Features • • • • Similar to the Popular NPN 2N6284 and the PNP 2N6287

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

Contextual Info: UTC MJD210 PNP EPITAXIAL PLANAR SILICON TRANSISTOR PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS DESCRIPTION The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. FEATURE *Collector-Emitter Sustaining Voltage VCEO sus =25V (Min) @ IC =10mA

PART NUMBER OF PNP 2A DPAK

Contextual Info: UTC MJD210 PNP EPITAXIAL PLANAR SILICON TRANSISTOR PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS DESCRIPTION The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. 1 FEATURE * Collector-Emitter Sustaining Voltage VCEO sus =25V (Min) @ IC =10mA