DIODE BAY 68 Search Results

Diode BAY 54

Abstract: tfk 341 Diode BAY 74 TFK 68 diode Diode BAY 45 TFK 341 T 74340 TFK 101 bay 68 diode Diode BAY 68
Contextual Info: BAY 68 - BAY 69 Silizium-Epitaxial-Planar-Dioden Silicon epitaxial planar diodes Anwendungen: Sehr schnelle Schalter Applications: Very fast switches Abmessungen in mm Dimensions in mm 01.9 KATHODE CATHODE Normgehäuse Case 54 A 2 DIN 41880 JEDEC DO 35 Gewicht • Weight

Diode BAY 54

Abstract: 68W35 telefunken diodes 914 Diode BAY 12 AL6G BAY69 Diode BAY 45 Diode BAY 69 Scans-0014926 marking 69
Contextual Info: TELEFUNKEN ELECTRONIC 17E D TllUllFMIMKilifl electronic • â'îSOO'ïfc. O O O ^ M S 7 ■ AL66 BAY 68 • BAY 69 Creative Technologies T-OZ-0°l Silicon Epitaxial Planar Diodes Applications: Very fast switches Dimensions in mm •110 « / Cathoda \ [| - 11-

Diode BAY 68

Abstract: diode bay 69 Diode BAY 45 diode I-35 L aeg diode bay 68 diode Diode BAY ODOT747 marking 69
Contextual Info: A E G CORP 17E D O D ETM Sb Q Q G TTH S □ • BAY 68 • BAY 69 TfiBLSiPiyiliiKIIKl electronic Creative TechnoSogies T-0Z-Q°l Silicon Epitaxial Planar Diodes Applications: Very fast switches Dimensions in mm Cathode Standard glass case 5 4 A 2 DIN 41880

Diode BAY 71

Abstract: Diode BAY 45 SFD43 Diode BAY 46 Diode BAY 88 BAW21 ESM 3070 1n 4009 diode BAY67 SFD49
Contextual Info: general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général th o m s o n -c s f Case \> F A V 200.225 mA 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 25 J €£043 1N456 1N 456 A W 449)1 1 30 rtm a a

power supply IRF830 APPLICATION

Abstract: IRL830T IRL830 BAY 45 BAY 61 MOSFET 400V TO-220 IRF830 IRL830S Diode BAY 18 Diode BAY 45
Contextual Info: Bay Linear Linear Excellence IRF830 POWER MOSFET Advance Information Description Features The Bay Linear MOSFET’s provide the designers with the best combination of fast switching, ruggedized device design, low 0n-resistance and low cost-effectiveness. The TO-220 is offered in a 3-pin is universally preferred for all

Diode BAY 61

Abstract: Diode BAY 55 Diode BAY 80 3AX11 BXY 36 DIODE diode sax 34 bxy26 Diode BAY 68 Diode BAY 23 BAX11
Contextual Info: /licrowave semiconductor diodes and components licrowave PN silicon diodes Type Fig. Nr. GHz ft ns ÄthJC K/W 10.15 33 2 10 33 2 10 3AX 11/10 34 60 3AX11/IU 34 60 o / • Ö6V 00 cj at £/r = 6 V pF CO tf BR V 60 4,7.6,8 47 1 12 34 60 3,3.4,7 47 1 12

B2515

Abstract: b2500 ultra FAST DMOS FET Switches B2520 B2520K4
Contextual Info: Bay Linear Inspire the Linear Power B2520/B2515 N-CHANNEL DMOS FET SWITCH VIDEO TRANSISTOR Series Description Features The B2520 series consists of enhancement-mode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency applications. The

ultra FAST DMOS FET Switches

Abstract: 60659 B3520 B3520K4 B3540 B3540K4-XX CT-3520
Contextual Info: Bay Linear Inspire the Linear Power B3520/B3540 N-CHANNEL DMOS FET SWITCH High Gain Level Shifter Series Description Features The B3520 series consists of enhancement-mode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency wireless

TCA4401

Abstract: CD 4049 BP TCA440 IC CD 4027 diode zener BZX 61 C 10 tda4050 LD57C diode BAY61 receiver tca440 BAY61
Contextual Info: Remote Control Appnote 34 1. Simple Infrared Remote Control with Low Current Consumption gate 1 drops below the minimum H-level threshold and thus the oscillation is interrupted. The time constant of R1C1-circuit is dimensioned for a burst length of 1 ms. The 1 nF capacitor,

TAA761A

Abstract: TDA4050B BPW32 TAA761 FLH101 TCA335A tda4050 TCA965 equivalent tca965 transistor bc238
Contextual Info: Light Activated Switches Appnote 33 able and adjustable in its position an efficiency maximum can be achieved. Miniature Light Barrier for a Shaft Position Encoder or a Revolution Counter Figure 2. Miniature light barriers are required for shaft position encoders,

WATKINS JOHNSON mixer

Abstract: vari-l 1785 TETRA etch magnum microwave Magnum Microwave mixer BD256 WATKINS JOHNSON design of Circular Patch Antenna in ISM Band Avantek mixer BPD5-0767-072SA
Contextual Info: There is a new leader and source for your RF & microwave systems and components … Spectrum Microwave. Combining the people, products and technologies from FSY Microwave, Salisbury Engineering, Q-Bit, Magnum Microwave, Radian Technologies and Amplifonix into a single

BA100 diode

Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Contextual Info: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any

AC125K

Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Contextual Info: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

HVC376B

Contextual Info: HVC376B Variable Capacitance Diode for VCO REJ03G0091-0100Z Previous: ADE-208-687 Rev.1.00 Sep.17.2003 Features • High capacitance ratio (n = 4.3min) and good C-V linearity. • High Q circuit can be composed due to low series resistance. (rs = 0.8 Ω max)

PCS5035

Contextual Info: Standard Products PCS5035 Quintet Precision Current Source Radiation Tolerant www.aeroflex.com/power PRELIMINARY February 13, 2009 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Radiation Performance - Total dose > 100 krad Si , Dose rate = 50 - 300 rads(Si)/s

scsi cable adapter

Abstract: ibm RS/6000 software offline UPS optical disk drive SA38-0569-01 EIA-232 SA38-0569
Contextual Info: RS/6000 Enterprise Server Model F80 IBM Installation Guide SA38-0569-01 Second Edition June 2000 Before using this information and the product it supports, read the information in “Safety Notices” on page vii, Appendix B, “Environmental Notices” on page 101, and Appendix C,

RL0503-5820-97-MS

Abstract: PCS5035 Thermistor 50K ohm RL0503-55.36K-122-MS RL0503-5820-97-MS 10K thermistor 10k ohm thermistor 5k ohm RL0503-1248-73-MS RL0503-2890-95-MS PCS5035-7
Contextual Info: Standard Products PCS5035 Quintet Precision Current Sources Built-In Comparators Radiation Tolerant www.aeroflex.com/power November 17, 2009 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Radiation Performance - Total dose > 100 krad Si , Dose rate = 50 - 300 rads(Si)/s

Contextual Info: Standard Products PCS5035 Quintet Precision Current Sources Built-In Comparators Radiation Tolerant www.aeroflex.com/pcs September 12, 2012 FEATURES ❑ Radiation Performance - Total dose > 100 krad Si , Dose rate = 50 - 300 rads(Si)/s - ELDRS > 15 krads (Si), Dose rate = .01 rads(Si)/s

Contextual Info: Standard Products PCS5035 Quintet Precision Current Sources Built-In Comparators Radiation Tolerant www.aeroflex.com/power August 3, 2011 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Radiation Performance - Total dose > 100 krad Si , Dose rate = 50 - 300 rads(Si)/s

Contextual Info: Standard Products PCS5035 Quintet Precision Current Sources Built-In Comparators Radiation Tolerant www.aeroflex.com/power April 9, 2012 FEATURES ❑ Radiation Performance - Total dose > 100 krad Si , Dose rate = 50 - 300 rads(Si)/s - ELDRS > 15 krads (Si), Dose rate = .01 rads(Si)/s

Thyristor bst 2

Abstract: CA3082 transistor arrays 5v CA3081 DR2000 40736R CA3081F CA3081M CA3082M CA3082M96
Contextual Info: CA3081, CA3082 CT UCT PRODU E T PROD E E L T O U S IT B SIL O ST -INTER E SU B 8 L 8 8 IB S 1 PO S onsData Sheet om FOR A tral Applicati @in tersil.c p n p e call C mail: centa or e General Purpose High Current NPN Transistor Arrays itle A30 , 308 bt enl rse

RQK0203SGDQA

Abstract: RQK0203SGDQATL-E SC-59A a83v
Contextual Info: RQK0203SGDQA Silicon N Channel MOS FET Power Switching REJ03G1323-0300 Rev.3.00 Jun 12, 2006 Features • Low on-resistance RDS on = 68 mΩ typ (VGS = 4.5 V, ID = 1.5 A) • Low drive current • High speed switching • 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A

Contextual Info: RQK0203SGDQA Silicon N Channel MOS FET Power Switching REJ03G1323-0200 Rev.2.00 Feb 28, 2006 Features • Low on-resistance RDS on = 68 mΩ typ (VGS = 4.5 V, ID = 1.5 A) • Low drive current • High speed switching • 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A