DIODE 31DQ05 Search Results

Diode 31DQ06

Contextual Info: SCHOTTKY BARRIER DIODE 3.3A/50— 60V 31DQ05 31DQ06 FEA TU R E S ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency ° High Surge Capability ° 30 Volts through 100 Volts Types Available MAXIMUM RATING S \ tïpe Voltage Rating ♦ 31DQ05 31DQ06

Contextual Info: SCHOTTKY BARRIER DIODE 31DQ05 31DQ06 3.3A/50— 60V FEATU RES ° Low Forward Voltage Drop 5.^.23 DIA - m . • Low Power Loss, High Efficiency 1.50059) » 1.30O51) ° High Surge Capability n 21 .83) MIN 30 Volts through 100 Volts Types Available 10(.39)

Diode 31DQ06

Abstract: Diode 31DQ05 31DQ05 31DQ06 BACR
Contextual Info: SCHOTTKY BARRIER DIODE 31DQ05 31DQ06 3.3A/50— 60V FEATURES ° Low Forward Voltage Drop 5.^.23 D IA ° Low Power L o s s , High Efficiency 1.5 .059) n l . 1.3(.051) ° High Surge Capability 21(.83) MIN 30 Volts through 100 Volts Types Available *Ü 1.5(.059) T-.T »

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

motorola diode cross reference

Abstract: replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"
Contextual Info: CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA IR 1N5817 SANKEN G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 MBR330 MBR340 MBR350 MBR360 MBR390 MBR3100 MBRS120LT3 MBRS130LT3 MBRS130T3 MBRS140T3 MBRS190T3

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

mur1650

Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
Contextual Info: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and

FE16B

Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
Contextual Info: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —

PK MUR 460

Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
Contextual Info: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,

MR2835S equivalent

Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Contextual Info: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

equivalent components of diode 1N5399

Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
Contextual Info: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

smd diode f54

Abstract: 18t0045 smd f54 209DMQ 20F0040 209DMQ150 50W005F 15CT0035 smd diode K10 209CMQ150
Contextual Info: Other Products from IR Schottky Diode Surface Mount - Discrete 0 .7 7 - 20 Am ps 'F AV @ TC Case Outline >RM@ Rated V r w m Part Number VRRM (A) 1.1 (°C) 10MQ040 00 40 92 (V) 0.51 10MQ060 10MQ090 60 90 0 .77 0 .77 110 110 0.57 0.65 _ _ 7.5 5.0 15MQ040

F10P100

Abstract: 10EF1 12MF30 diode f40c 60KQ10B 30MF40 F10KF20B 12MF40 C16P04Q C25P40F
Contextual Info: SELECTORS GUIDE S c h o ttk y B a rrie r Diode-Single C ase Style Io A V FM (V) 1.0 0.45 30 11EQS03L 52 0.45 20 ♦ 11EQS02L 50 0.55 30 40 ♦ 11EQ03 11EQ04 60 0.58 50 60 ♦ 11EQ05 11EQ06 62 0.85 90 100 ♦ 11EQ09 11EQ10 64 0.55 30 40 ♦ 11EQS03 11EQS04

Diode 31DQ06

Abstract: 31DQ05 VS-31DQ06TR
Contextual Info: VS-31DQ05, VS-31DQ05-M3, VS-31DQ06, VS-31DQ06-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 3.3 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy

31DQ06

Contextual Info: VS-31DQ05, VS-31DQ05-M3, VS-31DQ06, VS-31DQ06-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 3.3 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy

Contextual Info: VS-31DQ05, VS-31DQ05-M3, VS-31DQ06, VS-31DQ06-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 3.3 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy

31DQ

Abstract: 31DQ05 31DQ06 C-16 RS-296-D
Contextual Info: 31DQ05, 31DQ06 Vishay High Power Products Schottky Rectifier, 3.3 A FEATURES • Low profile, axial leaded outline • High frequency operation • Very low forward voltage drop Cathode Anode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance

31DQ06

Abstract: 31DQ 31DQ05
Contextual Info: Bulletin PD-2.305 rev. F 11/04 31DQ05 31DQ06 SCHOTTKY RECTIFIER 3.3 Amp Major Ratings and Characteristics Description/ Features The 31DQ. axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse

31DQ06

Abstract: Diode 31DQ06 Diode 31DQ 31DQ 31DQ05
Contextual Info: Bulletin PD-2.305 rev. E 03/03 31DQ05 31DQ06 SCHOTTKY RECTIFIER 3.3 Amp Major Ratings and Characteristics Description/ Features The 31DQ. axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse

Diode 31DQ

Abstract: 31DQ 31DQ05 31DQ06
Contextual Info: Bulletin PD-2.305 rev. G 04/05 31DQ05 31DQ06 SCHOTTKY RECTIFIER 3.3 Amp Major Ratings and Characteristics Description/ Features The 31DQ. axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse

Diode 31DQ06

Abstract: 31DQ Diode 31DQ 31DQ05 31DQ06 pd230
Contextual Info: Bulletin PD-2.305 rev. D 03/02 31DQ05 31DQ06 SCHOTTKY RECTIFIER 3.3 Amp Major Ratings and Characteristics Characteristics Description/Features The 31DQ. axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery

DIODES Inc DO201 marking

Abstract: 31DQ 31DQ05 31DQ06 C-16 Diode 31DQ06
Contextual Info: 31DQ05, 31DQ06 Vishay High Power Products Schottky Rectifier, 3.3 A FEATURES • Low profile, axial leaded outline • High frequency operation • Very low forward voltage drop Cathode Anode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance

31DQ

Abstract: 31DQ05 31DQ06 Diode 31DQ06
Contextual Info: Bulletin PD-2.305 rev. F 11/04 31DQ05 31DQ06 SCHOTTKY RECTIFIER 3.3 Amp Major Ratings and Characteristics Description/ Features The 31DQ. axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse

Contextual Info: 31DQ05/31DQ06 Vishay High Power Products Schottky Rectifier, 3.3 A FEATURES • Low profile, axial leaded outline RoHS • High frequency operation COMPLIANT • Very low forward voltage drop Cathode Anode • High purity, high temperature epoxy encapsulation for