DIODE 1N649 Search Results

Germanium diode

Abstract: 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 2 Amp zener diode DIODE 1N649 germanium rectifier diode OA95 diode
Contextual Info: Index f P art N Part Number Description 1N34A 1N38A 1N60A 1N100A Gold Gold Gold Gold 1N270 Gold Bonded Germ anium Diode Gold Bonded Germanium Diode Gold Bonded Germanium Diode Low Leakage Silicon Diodes Low Leakage Silicon Diodes Low Leakage Silicon Diodes

1N1743

Abstract: IN5234 IN5008 1N4202 zener diode 1N PH 48 diode 1n1418 1NS232 zener diode c51 ph 1n587 1N4465
Contextual Info: ZENER DIODE/RECTIFIER CROSS REFERENCE CHART Containing all JE D E C registered Zener diodes. This popular reference chart contains highlight information on all JE D E C registered Zener diode and rectifier types as well as Microsemi types. The following Codes are used:

diode 4483

Abstract: RZ2h marking E 1n diode marking 1n diode zener 4474 1N4471
Contextual Info: 1N4460 thru 1N4496 and 1N6485 thru 1N6491 Microsemi Corp. The diode experts SCOTTSDALE, /1Z ☆JANS* 1.5 WATT GLASS ZENER DIODES FEATURES • • • • • • • • Microminiature package. High performance characteristics. Stable operation at temperatures to 200°C .

1n645

Abstract: 1n649 1N64 1N646
Contextual Info: 1N645 THRU 1N649 MINIATURE GLASS PASSIVATED SILICON RECTIFIER Voltage - 225 to 600 Volts Current- 400 Milliamperes FEATURES ♦ High temperature metallurgical^ bonded compression contacts as found in diode-con structed rectifiers ♦ 0.4 Ampere operation at Ta = 25’C with no ther^

Contextual Info: 1N6490+JANTXV Diodes General-Purpose Reference/Regulator Diode Military/High-RelY V Z Nom.(V) Reference Voltage5.1 @I(Z) (A) (Test Condition)49m Tolerance (%) P(D) Max. (W)1.5 Z(z) Max. (ê) Dyn. Imped.7.0 Temp Coef pp/10k3.0 Maximum Operating Temp (øC)175

Contextual Info: 1N6490+JAN Diodes General-Purpose Reference/Regulator Diode Military/High-RelY V Z Nom.(V) Reference Voltage5.1 @I(Z) (A) (Test Condition)49m Tolerance (%) P(D) Max. (W)1.5 Z(z) Max. (ê) Dyn. Imped.7.0 Temp Coef pp/10k3.0 Maximum Operating Temp (øC)175

Contextual Info: 1N6496+JANTX Diodes Core-Driver Diode Array Military/High-RelY Circuits Per Package2 Diodes Per Circuit16 I F Max. (A) Forward Current300m V(RRM) (V) Rep.Pk.Rev. Voltage50 t(rr) Max.(s) Rev. Rec. Time20n @I(F) (A) (Test Condition)200m @I(R) (A) (Test Condition)200m

Contextual Info: 1N6496+JANTXV Diodes Core-Driver Diode Array Military/High-RelY Circuits Per Package2 Diodes Per Circuit16 I F Max. (A) Forward Current300m V(RRM) (V) Rep.Pk.Rev. Voltage50 t(rr) Max.(s) Rev. Rec. Time20n @I(F) (A) (Test Condition)200m @I(R) (A) (Test Condition)200m

Contextual Info: 1N6496+JAN Diodes Core-Driver Diode Array Military/High-RelY Circuits Per Package2 Diodes Per Circuit16 I F Max. (A) Forward Current300m V(RRM) (V) Rep.Pk.Rev. Voltage50 t(rr) Max.(s) Rev. Rec. Time20n @I(F) (A) (Test Condition)200m @I(R) (A) (Test Condition)200m

DIODE 1N649

Abstract: diode 1N645 JANTX markings on diode marking 332 1N649 JANTX 1N647 military part marking symbols jan 1N647-1 JANTX 1N647-1 1N645-1 JANS
Contextual Info: MIL SPECS I C | 0 D D 0 1 2 S 0001574 4 | T-of-cy \ NOTICE I IOF VALIDATION ! INCH-POUND MIL-S-19500/240E NOTICE 1 24 August 1988 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER, TYPES 1N645, 1N647, 1N649, JAN AND JANTX; 1N645-1, 1N647-1

.25 watt Zener diode

Abstract: 1N4465 1N4475 1N4474 n448 N449 1N4460 1N4496 1N6485 1N6486
Contextual Info: 1N 4460 thru 1N 4496 and 1N 6485 thru 1N6491 Microsemi Corp. The diode experts SCOTTSDALE, /1Z ☆JÀ N S Ï 1.5 WATT G LA SS ZEN ER DIODES FEATURES • • • • • • • • Microminiature package. High performance characteristics. Stable operation at temperatures to 200°C.

567d

Abstract: 1N6492 1N6492U4
Contextual Info: INCH-POUND MIL-PRF-19500/567D 8 February 2008 SUPERSEDING MIL-PRF-19500/567C 12 September 2003 The documentation and process conversion measures necessary to comply with this revision shall be completed by 8 May 2008. PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON,

1N6496

Abstract: 1N6101 1n6511 1N6506 1N6507 1N5768 1N5770 1N5772 1N5774 1N6100
Contextual Info: INCH-POUND MIL-PRF-19500/474G 22 August 2008 SUPERSEDING MIL-PRF-19500/474F 23 January 2007 The documentation and process conversion measures necessary to comply with this revision shall be completed by 22 November 2008. PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, SILICON, MULTIPLE DIODE ARRAYS,

572B

Abstract: jantx diodes 572-B 1N6502 Lux Standards table 1N6493 1N6494 1N6495 1N6500 1N6501
Contextual Info: The documentation and process conversion measures necessary to comply with the revision shall be completed by 30 January 1999 INCH-POUND MIL-PRF-19500/572B 30 October 1998 SUPERSEDING MIL-S-19500/572A 23 November 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, LIGHT EMITTING

1N5770

Contextual Info: INCH-POUND MIL-PRF-19500/474F 23 January 2007 SUPERSEDING MIL-PRF-19500/474E 3 November 1997 The documentation and process conversion measures necessary to comply with this revision shall be completed by 23 March 2007. * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, SILICON, MULTIPLE DIODE ARRAYS,

406G

Abstract: 406-G 1N4465 1N4460D 1N4477 1N4460 1N4471 1N4469 1N4474 1N4466
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 23 September 2006. INCH-POUND MIL-PRF-19500/406G 23 June 2006 SUPERSEDING MIL-PRF-19500/406F 24 November 2004 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICES, DIODE, SILICON, VOLTAGE REGULATOR,

DIODE 1N649

Abstract: diode 351 1N649 JANTX diode 1n645 1N649-1 JANTX 1N647-1 JANTX equivalent 1N647-1 1N647-1 JANTXV 1N649-1 1N649UR1 JAN
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 13 November 2009. MIL-PRF-19500/240R 13 August 2009 SUPERSEDING MIL-PRF-19500/240P 5 September 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER,

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

TIS43

Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
Contextual Info: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.

N6491

Abstract: 1N649-1 1N645-1 1N647-1 1N645-1 JAN 1N645-1 JANS
Contextual Info: JAN 1 N 6 4 5 -1 thru JAN 1 N 6 4 9 -1 Micro/semi Corp. The diode experts SANTA ANA, CA ☆JANS* F o r m o re in fo rm a tio n call: 714 979-8220 FEATURES MILITARY RECTIFIERS • M ICRO M INIATURE PACKAGE • VO IDLESS HERMETICALLY SEALED GLASS PACKAGE • TRIPLE LAYER PASSIVATION

Contextual Info: DUAL SCHOTTKY RECTIFIER 1N6492-DA 1N6492-DC • • • • • • • Dual Rectifier in One Package Common Anode or Cathode Option Extremely Low VF and IR High Surge Capability Low Recovery Charge Low Profile TO-39 Hermetic Package High-Reliability Screening Options Available

1n6492

Abstract: LE17 MIL-PRF19500 QR217
Contextual Info: DUAL SCHOTTKY RECTIFIER 1N6492-DA 1N6492-DC • • • • • • • Dual Rectifier in One Package Common Anode or Cathode Option Extremely Low VF and IR High Surge Capability Low Recovery Charge Low Profile TO-39 Hermetic Package High-Reliability Screening Options Available