DDR31600MHZ Search Results

PC3-12800

Abstract: DDR3-1066 PC3-12800 kingston KHX12800D3/1G
Contextual Info: Memory Module Specification T E C H N O L O G Y KHX12800D3/1G 1GB 128M x 64-Bit PC3-12800 CL9 240-Pin DIMM DESCRIPTION: This document describes Kingston's 128M x 64-bit 1GB 1024MB DDR3-1600 CL9 SDRAM (Synchronous DRAM) memory module, based on eight 128M x 8-bit DDR3 FBGA components. This module has been tested to run at DDR31600MHz at a low latency timing of 9-9-9-27 at 1.7V to 1.9V. The SPD is programmed to JEDEC standard latency

PC3-12800

Abstract: DDR3-1066 PC3-12800 kingston PC3-12800 2g kingston
Contextual Info: Memory Module Specification T E C H N O L O G Y KHX12800D3/2G 2GB 256M x 64-Bit PC3-12800 CL9 240-Pin DIMM DESCRIPTION: This document describes Kingston's 256M x 64-bit 2GB 2048MB DDR3-1600 CL9 SDRAM (Synchronous DRAM) memory module, based on sixteen 128M x 8-bit DDR3 FBGA components. This module has been tested to run at DDR31600MHz at a low latency timing of 9-9-9-27 at 1.7V to 1.9V. The SPD is programmed to JEDEC standard latency

Contextual Info: M2S1G64CBH4B5P / M2S2G64CB88B5N / M2S4G64CB8HB5N 1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64 PC3-8500 / PC3-10600 / PC3-12800 Unbuffered DDR3 SO-DIMM Based on DDR3-1066/1333/1600 128Mx16 1GB / 256Mx8 (2GB) / 256Mx8 (4GB) SDRAM B-Die Features •Performance:

IS46TR

Abstract: IS43TR82560A DDR3 DRAM 2GB 128Mx16 96BALL FBGA "2Gb DDR3 SDRAM"
Contextual Info: IS43/46TR16128A/AL, IS43/46TR82560A/AL 256Mx8, 128Mx16 2Gb DDR3 SDRAM ADVANCED INFORMATION MAY 2012 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V        

Contextual Info: Memory Module Specifications KHX1600C9D3K6/12GX 12GB 2GB 256M x 64-Bit x 6 pcs. DDR3-1600MHz CL9 240-Pin DIMM Kit SPECIFICATIONS CL(IDD) 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 110ns Row Active Time (tRASmin)

Contextual Info: Memory Module Specifications KHX1600C7D3K3/6GX 6GB 2GB 256M x 64-Bit x 3 pcs. DDR3-1600MHz CL7 240-Pin DIMM Kit SPECIFICATIONS CL(IDD) 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 110ns Row Active Time (tRASmin)

NT5CB128M8CN

Abstract: NT5CB256M4CN NT5CB128
Contextual Info: 1Gb DDR3 SDRAM C-Die NT5CB256M4CN / NT5CB128M8CN Feature  1.5V ± 0.075V JEDEC Standard Power Supply  Write Leveling  8 Internal memory banks (BA0- BA2)  OCD Calibration  Differential clock input (CK, )  Dynamic ODT (Rtt_Nom & Rtt_WR)

128MX16

Abstract: NT4GC64B8HB0NS-CG
Contextual Info: NT1GC64BH4B0PS / NT2GC64B88B0NS / NT4GC64B8HB0NS 1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64 PC3-8500 / PC3-10600 / PC3-12800 Unbuffered DDR3 SO-DIMM Based on DDR3-1066/1333/1600 128Mx16 1GB / 256Mx8 (2GB) / 256Mx8 (4GB) SDRAM B-Die Features •Performance:

srx 2039

Contextual Info: NT2GC72B89G0NL K /NT2GC72C89G0NL(K) ) NT8GC72B4NG0NL(K)/NT8GC72C4NG0NL(K) 2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 PC3-10600 / PC3(L)-12800 Registered DDR3 SDRAM DIMM Based on DDR3-1333/1600 256Mx8 (2GB/4GB) / 512Mx4 (4GB/8GB) SDRAM G-Die

Contextual Info: NT2GC64B C H4B0PF / NT4GC64B(C)88B0NF / NT8GC64B(C)8HB0NF 2GB: 256M x 64 / 4GB: 512M x 64 / 8GB: 1024M x 64 PC3(L)-12800 Unbuffered DDR3 SDRAM DIMM Based on DDR3(L)-1600 256Mx16 and 512Mx8 SDRAM B-Die Features •Performance: Speed Sort PC3(L)-12800 -DI Unit

NT5CB256M8DN

Abstract: NT5CB256m tl 555 c "2Gb DDR3 SDRAM" NT5CB256M8 NT5CB256 NT5CC256M8 NT5CC256
Contextual Info: 2Gb DDR3 SDRAM D-Die NT5CB512M4DN / NT5CB256M8DN NT5CC512M4DN / NT5CC256M8DN Feature  1.5V ± 0.075V / 1.35V -0.0675V/+0.1V JEDEC Standard Power Supply  Output Driver Impedance Control  Write Leveling  OCD Calibration  Dynamic ODT (Rtt_Nom & Rtt_WR)

NT2GC72C89B2NF

Abstract: NT4GC72B8PB0NF-DI nanya 4GB udimm ddr3
Contextual Info: NT2GC72B89B0NF / NT4GC72B8PB0NF NT2GC72C89B0NF / NT4GC72C8PB0NF NT2GC72C89B2NF / NT4GC72C8PB2NF 2GB: 256M x 72 / 4GB: 512M x 72 PC3-8500 / PC3-10600 Unbuffered DDR3 SDRAM DIMM with ECC Based on DDR3-1066/1333 256Mx8 SDRAM B-Die Features •Performance: Speed Sort

NT8GC72B8PB0NF-DI

Abstract: NT8GC72C8PB0NF nanya 8gb DDR3 DIMM CL-nRCD-nRP 1024Mx8 mrs 317 Nanya DDR3
Contextual Info: NT4GC72B C 89B0NF / NT8GC72B(C)8PB0NF 4GB: 512M x 72 / 8GB: 1024M x 72 PC3(L)-10600 / PC3(L)-12800 Unbuffered DDR3 SDRAM DIMM with ECC Based on DDR3(L)-1333/1600 1024Mx8 SDRAM B-Die Features •Performance: Speed Sort DIMM CAS Latency PC3(L)-10600 PC3(L)-12800

JESD-79

Abstract: ddr3 2133 jesd79 JESD79-3E
Contextual Info: NT4GC72B89C0NL K / NT4GC72C89C0NL(K) NT8GC72B4PC0NL(K) / NT8GC72C4PC0NL(K) / NT8GC72B8PC0NL(K) / NT8GC72C8PC0NL(K) NT16GC72B4NC0NL(K) / NT16GC72C4NC0NL(K) 4GB: 512Mx72 / 8GB: 1024Mx72 / 16GB: 2048M x 72 PC3-10600 / PC3-12800 / PC3-14900 Registered DDR3 SDRAM DIMM

NT5CC256

Contextual Info: 2Gb DDR3 SDRAM D-Die NT5CB512M4DN / NT5CB256M8DN NT5CC512M4DN / NT5CC256M8DN Feature  1.5V ± 0.075V / 1.35V -0.0675V/+0.1V JEDEC Standard Power Supply  Output Driver Impedance Control  Write Leveling  OCD Calibration  Dynamic ODT (Rtt_Nom & Rtt_WR)

Contextual Info: NT2GC64B C H4B0PF / NT4GC64B(C)88B0(1)NF / NT8GC64B(C)8HB0NF 2GB: 256M x 64 / 4GB: 512M x 64 / 8GB: 1024M x 64 PC3(L)-12800 Unbuffered DDR3 SDRAM DIMM Based on DDR3(L)-1600 256Mx16 and 512Mx8 SDRAM B-Die Features •Performance: Speed Sort PC3(L)-12800 -DI

KHX1600

Contextual Info: Memory Module Specifications KHX1600C8D3K2/4GX 4GB 2GB 256M x 64-Bit x 2 pcs. DDR3-1600MHz CL8 240-Pin DIMM Kit SPECIFICATIONS CL(IDD) 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 110ns Row Active Time (tRASmin)

N2CB2G40DN

Contextual Info: 2Gb DDR3 SDRAM D-Die N2CB2G40DN / N2CB2G80DN N2CC2G40DN / N2CC2G80DN Feature  1.5V ± 0.075V / 1.35V -0.0675V/+0.1V JEDEC Standard Power Supply  Output Driver Impedance Control  Write Leveling  OCD Calibration  Dynamic ODT (Rtt_Nom & Rtt_WR)

KHX1600

Abstract: DDR3 Mechanical Dimensions DDR3 DIMM SPD JEDEC KHX1600C9D3/2G ddr3 DDR3-1333 DDR3 DIMM 240 clock termination kingston ddr3 memory
Contextual Info: T E C H N O L O G Y Memory Module Specification KHX1600C9D3/2G 2GB 256M x 64-Bit DDR3-1600MHz CL9 240-Pin DIMM DESCRIPTION: This document describes Kingston's 256M x 64-bit 2GB 2048MB DDR3-1600MHz CL9 SDRAM (Synchronous DRAM) memory module, based on sixteen 128M x 8-bit DDR3 FBGA components. This module has been tested to run

SODIMM DDR3 Mechanical Dimensions

Abstract: SODIMM ddr3 8gb DDR3 Mechanical Dimensions DDR3 SDRAM Document ddr3 so-dimm 204
Contextual Info: Memory Module Specifications KHX1600C9S3K2/8GX 8GB 4GB 512M x 64-Bit x 2 pcs. DDR3-1600 CL9 204-Pin SODIMM Kit SPECIFICATIONS CL(IDD) 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 160ns (min.) Row Active Time (tRASmin)

Contextual Info: M2F2G64CB88G7N / M2F4G64CB8HG5N 2GB: 256M x 64 / 4GB: 512M x 64 PC3-10600 / PC3-12800 Unbuffered DDR3 SDRAM DIMM Based on DDR3-1333/1600 256Mx8 SDRAM G-Die Features •Performance: PC3-10600 PC3-12800 -CG -DI DIMM CAS Latency 9 11 fck – Clock Freqency 667

Contextual Info: M2F1G64CBH4B5P/ M2F1G64CBH4B9P M2F X 2G64CB88B7N / M2F(X)2G64CB88BHN M2F(X)4G64CB8HB5N / M2F(X)4G64CB8HB9N 1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64 PC3-8500 / PC3-10600 / PC3-12800 Unbuffered DDR3 SDRAM DIMM Based on DDR3-1066/1333 128Mx16 (1GB) and DDR3-1066/1333/1600 256Mx8 (2GB/4GB) SDRAM B-Die

Contextual Info: NT2GC72B89G0NL/NT2GC72C89G0NL NT8GC72B4NG0NL/NT8GC72C4NG0NL 2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 PC3-10600 / PC3-12800 Registered DDR3 SDRAM DIMM Based on DDR3-1333/1600 256Mx8 2GB/4GB / 512Mx4 (4GB/8GB) SDRAM G-Die

NT5CB256

Abstract: srt 8n JESD79-3 NT5CB128M8CN NT5CB128M8CN-CG NT5CB128M TI ddr3 controller datasheet NT5CB128
Contextual Info: 1Gb DDR3 SDRAM C-Die NT5CB256M4CN / NT5CB128M8CN Feature  1.5V ± 0.075V JEDEC Standard Power Supply  Write Leveling  8 Internal memory banks (BA0- BA2)  OCD Calibration  Differential clock input (CK, )  Dynamic ODT (Rtt_Nom & Rtt_WR)