DD144 Search Results

hs01

Abstract: JVW diode RIN125 HS 455 e
Contextual Info: niTSUBISHI DISCRETE SC blE D • DD144M5 623 ^ A m itsu b ish i MIT5 OPTOELECTRONICS HS01 ELECTRONIC DEVICE GROUP High Frequency Superimposition Module FEATURES ■ Low noise OUTLINE DRAWING R IN -1 2 5 dB/Hz Typ. ■ Packing in shield case ■ 5V single voltage supply

Contextual Info: N AMER PHILIPS/DISCRETE ObE D • bbS3T31 DD144D2 5 ■ PowerM OS transistor BU Z71 |j May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

DD144-3

Contextual Info: GaAIAs IRED H E 8 8 1 5 VG Description The HE8815VG is a 880 nm band GaAlAs infrared light emitting diode with a double heterojunction struc­ ture. It is suitable as a light source for VCR camera autofocus mechanisms. Features Package Type • HE8815VG: VG

Contextual Info: Extract from the online catalog HC-B 32-TFQ-80/M1PG29G Order No.: 1775680 Sleeve housing, for double locking latch, height 80 mm, with screw connection, 1x Pg29, straight cable entry

y5p 103k

Abstract: 502K1 Y5P181K ERIE CAPACITORS TYPE K
Contextual Info: MEDiUM TO HIGH K CERAMIC DISC CAPACITORS CLASS II 8c CLASS III PART N U M B ERING SYSTEM 50-1K VD C D D05 CAPACITOR TYPE AND SIZE 450 LEAD CONFIG. See lead style chart Y 5F 101 K CAPACITANCE VALUE Expressed in picofarads and identified by a three-digit number.

Contextual Info: DALLAS SEMICONDUCTOR DS1233D 5V EconoReset PIN ASSIGNMENT FEATURES • Automatically restarts microprocessor after power failure • Maintains reset for 350 ms after Vcc returns to an in­ tolerance condition • Accurate 5%, 10% or 15% microprocessor 5V power

DS1640

Contextual Info: DS129X DALLAS SEMICONDUCTOR FEATURES • Replaces 8 or 16 h a rd -to -g e t-a t m anual switches DS129x Elim inator PIN ASSIGNMENT GND2 [ 24 ] GND3 2 23 ] VCC T 23Ì VCC Dl [ 3 22 ] OA Dl 22Ì OA OQ [ 4 21 ] OB OQ 211 OB 00 5 20 ] OC 00 oe ON [ 6 19 ] OD om

TOY REMOTE tx6 rx6

Contextual Info: PICI 6C6X 8-Bit CMOS Microcontrollers Devices included in this data sheet: • • • • • • • • • • • Selectable oscillator options • Low-power, high-speed CMOS EPROM/ROM technology • Fully static design • Wide operating voltage range: 2.5V to 6.0V

Contextual Info: _ INTEGRATED D E V I C E bflE D IDT 4A25771 0 0 m M 3 T G5S PRELIMINARY IDT7MP4120 1M x 32 CMOS STATIC RAM MODULE Integrated Device Technology, Inc. FEATURES DESCRIPTION • High-density 4MB Static RAM module • Low protile 72-pin ZIP Zig-zag In-line vertical Package

fluorescent Display driver

Contextual Info: _ SÔE D • b 7 2 M E M G O O l M M b ô 74R H O K I J O K I Semiconauctor M S L 917 O K I SEMICONDUCTOR CROUP — f - S 2 - [$- 1 9 8-BIT PARALLEL-IN PARALLEL-OUT GENERAL DESCRIPTION Input may be driven directly by the TTL or CMOS. The vacuum fluorescent display tube

CE1X

Abstract: 70V7339 A12L IDT70V7339 IDT70V7339S
Contextual Info: HIGH-SPEED 3.3V 512K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE PRELIMINARY IDT70V7339S Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ 512K x 18 Synchronous Bank-Switchable Dual-ported SRAM Architecture – 64 independent 8K x 18 banks

Contextual Info: SAMSUNG ELECTRONICS INC bME » • 7Tfcj4142 D 0 1 4 4 4 4 50b ■ SÎ1G K KMM581000AN DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 581000AN is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung

Contextual Info: Housing - HC-B 32-KMQ-82/O1M32 - 1604864 Please be informed that the data shown in this PDF Document is generated from our Online Catalog. Please find the complete data in the user's documentation. Our General Terms of Use for Downloads are valid

Contextual Info: Housing - HC-B 32-KMQ-82/M1PG21 - 1775729 Please be informed that the data shown in this PDF Document is generated from our Online Catalog. Please find the complete data in the user's documentation. Our General Terms of Use for Downloads are valid

IDT70T631

Abstract: A18L
Contextual Info: Š Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT70T633/1S HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 8/10/12/15ns max.

Contextual Info: Housing - HC-B 32-SMQ-72/O1M32 - 1604867 Please be informed that the data shown in this PDF Document is generated from our Online Catalog. Please find the complete data in the user's documentation. Our General Terms of Use for Downloads are valid

Contextual Info: Extract from the online catalog HC-B 32-TFQ-80/O1STM40G Order No.: 1647307 Photo shows sleeve housing with support HEAVYCON sleeve housing B32, for double locking latch, height 80

Contextual Info: Extract from the online catalog HC-B 32-TFQ-80/O1M25S Order No.: 1604871 HEAVYCON sleeve housing B32, for double locking latch, height 80 mm, with support 1x M25, lateral conductor exit

Contextual Info: Extract from the online catalog HC-B 32-TFQ-80/O1M25G Order No.: 1604870 HEAVYCON sleeve housing B32, for double locking latch, height 80 mm, with support 1x M25, straight conductor exit

florida rf 100 2a

Abstract: n621 6-32UNC-2A BGY887B DIN45004B
Contextual Info: Philips Semiconductors Product specification CATV amplifier module FEATURES BGY887B PINNING - SOT115J2 • Excellent linearity PIN DESCRIPTION • Extremely low noise 1 input • High gain 2 common • Excellent return loss properties. 3 common 5 +Vß DESCRIPTION

IDT70T631

Abstract: 70T633
Contextual Info: Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT70T633/1S HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 8/10/12/15ns max.

OQ 0012

Abstract: DS2011D ds1234 DS1666 DS1206 DS1290 DS1291 DS1292 DS1293 DS129X
Contextual Info: D S 1 29 X DALLAS SEMICONDUCTOR FEATURES • Replaces 8 or 16 h a rd -to -g e t-a t m anual switches DS129x Elim inator PIN ASSIGNMENT GND2 [ 24 ] GND3 2 23 ] VCC T 23Ì VCC Dl [ 3 22 ] OA Dl 22Ì OA OQ [ 4 21 ] OB OQ 211 OB 00 5 20 ] OC 00 oe ON [ 6 19 ]

DS1287

Abstract: Dallas chip DS1287 12-HOUR MC146818A DS1287 real time "Real Time Clock" DS12887 DS1290 DS1292 Dallas DS1287
Contextual Info: DS1287 DALLAS DS1287 Real Tim e C lock s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • Drop-in replacem ent for IBM AT com puter clock/ca­ lendar • Pin com patible with the M C146818A MOT i 1 241 v cc NC I 2 231 SQW NC I 3 221 NC • Totally nonvolatile with over 10 years of operation in

tube 5670

Abstract: 5670 tube IDT70T631 IDT BGA256
Contextual Info: Š Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT70T633/1S HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed access