DD144-3
Contextual Info: GaAIAs IRED H E 8 8 1 5 VG Description The HE8815VG is a 880 nm band GaAlAs infrared light emitting diode with a double heterojunction struc ture. It is suitable as a light source for VCR camera autofocus mechanisms. Features Package Type • HE8815VG: VG
|
OCR Scan
|
he8815vgdd14430dd144-3 |
PDF
|
HE8815VG
Contextual Info: HE8815VG Description GaAIAs IRED The HE8815VG is a 880 nm band GaAlAs infrared light emitting diode with a double heterojunction structure. It is suitable as a light source for VCR camera autofocus mechanisms. Features Package Type • HE8815VG: VG • High efficiency and high power output
|
OCR Scan
|
he8815vg |
PDF
|
HE8807SG
Abstract: HL7832G HL7832HG HL8312E he8813vg Hitachi Scans-001 LRTBGVTG-U9V5-1 A7A9-5 TT7-6
Contextual Info: H IT A C H I/C O P T O E L E C T R O N IC S S l4 E D • G 012D 32 HL7832G/HG bMT « H GaAIAsLD *7 Description The HL7832G/HG are 0.78 pm band GaAlAs laser diodes with a double heterojunction structure, and are appropriate as the light sources for various optical application devices, including optical video disk play
|
OCR Scan
|
hl7832g/hgg012d32hl7832hghe8815vg+9he8813vgtjspo100he8811he8812sghe8807sghl7832ghl8312ehitachi scans-001lrtbgvtg-u9v5-1 a7a9-5 tt7-6
|
PDF
|
HE1301
Abstract: HE8807SG HE8813VG HE8815VG HL8312E HL8319E HL8319G Hitachi Scans-001
Contextual Info: HITACHI/ OPTOELECTRONICS SHE D • HHTbEGS 0Q1EGÔ3 GGD M H I T 4 GaAiAsLD H L 8 3 1 9 E /G Description The HL8319E/G are high-power 0.8 pm band GaAlAs laser diodes with a double heterojunction structure. Their internal circuit configuration is suited for operation on a single negative supply voltage. They are
|
OCR Scan
|
hl8319e/g001eghe8815vghe8813vg+10tjspo100he8811he8812sghe8404sghe1301he8807sghl8312ehl8319ehl8319ghitachi scans-001
|
PDF
|
HL7806
Abstract: 6808X L7851 hl7852 HL6411G HL8325G hitachi HL7852 hl7806g HL7851
Contextual Info: Product Lineup W avelength Visible and infrared laser diodes 633 nm O ptical output 3 mW Internal circuit Part num ber Main application LD ^P * HL6314M G HL6316G HL6411G* Pointer HL6315G f Pointer HL6312G Bar code reader H L 6313G t Bar code reader HL6720G
|
OCR Scan
|
hl6314mhl6316ghl6411ghl6315g+14hl6312g6313ghl6720ghl6724mhl6712ghl6722ghl78066808xl7851hl7852hl8325ghitachi hl7852hl7806ghl7851
|
PDF
|
HE8815VG
Abstract: HE8807SG HL8311E HL8311G HL8312E Hitachi Scans-001 P015M
Contextual Info: HITACHI/COPTOELECTRONICS 54E D • MM^bSOS 001E0b3 EIE H H I T M H L8 3 1 1 E /G G a A IA s L D Description The HL8311E/G are 0.8 Jim band GaAlAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment.
|
OCR Scan
|
hl8311e/ghe8815vghe8813vgtjspo100+10he8811he8812sghe8404sghe7601sghe8807sghl8311ehl8311ghl8312ehitachi scans-001p015m
|
PDF
|
HL7836MG
Abstract: HE8807SG HL7836G HL8312E Hitachi Scans-001
Contextual Info: HI TA CH I/ O P T O E L E C T R O NI CS 54E ]> • 44^205 0012037 120 « H I T 4 HL7836G/MG GaAIAs LD Description The HL7836G/MG are 0.78 (Jm band GaAIAs laser diodes with a double heterojunction structure. They are designed to be used with a unitary positive voltage power supply, and are appropriate as the light
|
OCR Scan
|
hl7836g/mghe8815vghe8813vgtjspo100+9he8811he8812sghe8404sghe7601sghl7836mghe8807sghl7836ghl8312ehitachi scans-001
|
PDF
|
HE8811
Abstract: HE8403 HE8807SG HE8812SG HE8813VG HE8815VG HL7842MG HL8312E he8813 Hitachi Scans-001
Contextual Info: HITACHI/ OPTOELECTRONICS S4E D • 4H1b2GS DDISDMT TMB HL7842MG (Preliminary)_ GaAiAs ld Description The HL7842MG is a 0.78 (im band GaAiAs laser diode with a double heterojunction structure. It is suit able as a light source for laser beam printers, laser levelers and various other types of optical equipment.
|
OCR Scan
|
hl7842mghe8815vghe8813vgtjspo100+9he8811he8812sghe8404sghe7601sghe8403he8807sghl8312ehe8813hitachi scans-001
|
PDF
|
HE8813VG
Abstract: HE8403 HE8807SG HE8811 HE8815VG HL8312E HL8312G HE84-03 Hitachi Scans-001 HE8807
Contextual Info: HL8312E/G GaAIAs LD HITACHI/ OPTOELECTRONICS Description S4E T> I 4 4 ^2 0 5 G0120b7 « H i m -4 1 -os The HL8312E/G are high-power 0.8 pm band GaAIAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment
|
OCR Scan
|
hl8312e/ghe8815vghe8813vgtjspo100+11he8811he8812sghe8404sghe7601sghe8403he8807sghl8312ehl8312ghe84-03hitachi scans-001he8807
|
PDF
|
HE8807SG
Abstract: HE8815VG HL7831G HL7831HG HL8312E Hitachi Scans-001 HE8403
Contextual Info: HITACHI/ OPTOELECTRONICS 54E J> 44^fc.5GS Q012DE7 261 HL7831G/HG GaAIAs LD Description The HL7831G/HG are 0.78 fun band GaAIAs laser diodes with a double heterojunction structure. MOCVD technology is employed for precise device analysis and optimization to realize low noise.
|
OCR Scan
|
q012de7hl7831g/hghl7831hghe8815vg+9he8813vgtjspo100he8811he8812sghe8807sghl7831ghl8312ehitachi scans-001he8403
|
PDF
|
11w cfl circuit
Abstract: HE8807SG HL1521A HL1521AC HL1521FG HL8312E LTH 1550 01 Hitachi Scans-001 44BA
Contextual Info: H I T A C H I / O P tOELECTRONICS 5 ME D • 44 Tbi2 D 5 G1 2 1 3 5 23 ^ ■ HITM InGaAsP LD H L 1 5 2 1 A /A C /F G 'T 'H t-c Description The HL1521A/AC/FG are 1.55 (im band laser diodes. Features • • Absolute Maximum Ratings (Tc = 25°C) Long wavelength output: Xp = 1530 - 1570 nm
|
OCR Scan
|
0g12135hl1521a/ac/fghl1521fghl1521+10he8815vghe8813vg11w cfl circuithe8807sghl1521ahl1521achl8312elth 1550 01hitachi scans-00144ba
|
PDF
|
hitachi he1301
Abstract: HL7838G HL8312E laser GaAIAs de 5 mw 760 800 HE8807SG HE8813VG HE8815VG HL7838 Hitachi Scans-001 HE8403
Contextual Info: HITACHI/ OPTOELECTRONICS S^E D • MM'JbSGS D0120142 S^fl « H I T 4 HL7838G GaAlAs LD Description The HL7838G is a 0.78 pm band GaAlAs laser diode with a double heterojunction structure and is appro priate as the light source for various optical application devices, including laser beam printers and laser
|
OCR Scan
|
hl7838gd0120l42he8815vghe8813vg+11tjspo100he8811he8812sghe8404sghitachi he1301hl8312elaser gaaias de 5 mw 760 800he8807sghl7838hitachi scans-001he8403
|
PDF
|
HL7806
Abstract: HE8807CL HL7812G HE8811 HL7812 he130
Contextual Info: Package Variations Laser Diodes Packages Open-air type rar Features Applicable Products ’ For experimental use •For module assembly HLP5400, HL1322A, HL1341A, HL1362A, HL1521A, HL1541A, HL1551A ■For module assembly • Chip carrier stem HL1321AC, HL1322AC, HL1341AC,
|
OCR Scan
|
hlp5400hl1322ahl1341ahl1362a+12hl1521ahl1541ahl1551ahl1321achl1322achl1341achl7806he8807clhl7812ghe8811hl7812he130
|
PDF
|
HL8314E
Abstract: XP 215 hitachi HE130 HE8815VG hitachi he1301 HL8314G HE8807SG HL8312E Hitachi Scans-001
Contextual Info: HITACHI/ OPTOELECTRONICS SHE D • MMTbSDS 0012071 3TT ■ H L 8 3 1 4 E /G _GaAIAs LD Description *4 (~ C & The HL8314E/G are high-power 0.8 pm band GaAIAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment
|
OCR Scan
|
hl8314e/g0g12a71he8815vghe8813vg+12tjspo100he8811he8812sghe8404sghl8314exp 215 hitachihe130hitachi he1301hl8314ghe8807sghl8312ehitachi scans-001
|
PDF
|
|
|
hitachi sr 302
Abstract: HL1561BF te 1819 HL1561A HL1561AC 10 gb laser diode DD121S3 Hitachi Scans-001
Contextual Info: 54 E J> HITACHI/ OPTOELECTRONICS • HHTbSDS DD121S3 254 « H I T 4 H L 1 5 6 1 A /A C /B F InGaAsP LD Description The HL1561 A/AC/BF are 1.55 (am band InGaAsP X/4 phase-shifted distributed-feedback (DFB) laser diodes with a buried heterostructure. Fiber Specifications (HL1561BF only)
|
OCR Scan
|
hl1561a/ac/bfdd121s3hl1561bfhl1561+9561a/ac/bfhe8815vghe8813vghitachi sr 302te 1819hl1561ahl1561ac10 gb laser diodehitachi scans-001
|
PDF
|
HL1221A
Abstract: HL1221AC HL8312E Hitachi Scans-001 HE8403
Contextual Info: HITACHI/ OPTOEL ECT RONICS 54E D • OGlSGfi? 7 5 b I 44^205 InGaAsP LD HL1221 A/AC Description The HL1221A/AC are 1.2 pm band InGaAsP laser diodes with a double heterodyne structure. They are suitable as light sources in fiberoptic communications and various other types of optical applications.
|
OCR Scan
|
hl1221hl1221a/ache8815vghe8813vg+10tjspo100he8811he8812sghe8404sghe7601sghl1221ahl1221achl8312ehitachi scans-001he8403
|
PDF
|
T9040
Abstract: HE8807SG HE8813VG HE8815VG HL8312E HL8318E HL8318G Hitachi Scans-001
Contextual Info: HITACHI/ OPTOELECTRONICS SHE D • 44ibaGS 001207^ bñT « H I T 4 HL8318E/G GaAIAs LD (-os Description The HL8318E/G are high-power 0.8 pm band GaAIAs laser diodes with a double heterojunction structure. Their internal circuit configuration is suited for operation on a single positive supply voltage. They are
|
OCR Scan
|
hl8318e/g441beg5he8815vghe8813vg+10tjspo100he8811he8812sghe8404sgt9040he8807sghl8312ehl8318ehl8318ghitachi scans-001
|
PDF
|
HL8312E
Abstract: 44FC I00C HE8807SG HE8811 HE8812SG HE8813VG HE8815VG HL7841MG HE7601
Contextual Info: HITACHI/ OPTOELECTRONICS SME T> 44^fc.20S G 0 1 2 0 4 7 07T • HL7841MG (Preliminary) GaAIAs LD 7 Description The HL7841MG is a 0.78 (im band GaAIAs laser diode with a multi-quantum well (MQW) structure. It is especially suitable as a light source for laser beam printers with its low threshold current and low slope
|
OCR Scan
|
hl7841mgg012047he8815vghe8813vg+9tjspo100he8811he8812sghe8404sghl8312e44fci00che8807sghe7601
|
PDF
|
HL7802E
Abstract: HE8807SG HE8813VG HE8815VG HL7802G HL8312E Hitachi Scans-001 he8813 HE8403 T9040
Contextual Info: HITACHI/ OPTOEL ECT RONICS 5ME » • MMTbEQS OGIEGIS SbT « H I T 4 HL7802E/G GaAIAs LD Description The HL7802E/G are 0.78 pm band GaAIAs laser diodes with a double heterojunction structure. They are suitable as light sources for laser printers, laser levelers and various other types of optical equipment.
|
OCR Scan
|
hl7802e/ghe8815vghe8813vgtjspo100+12he8811he8812sghe8404sghe7601sghl7802ehe8807sghl7802ghl8312ehitachi scans-001he8813he8403t9040
|
PDF
|
HE8403
Contextual Info: §6. Reliability This section covers points which particularly affect the operating life light emitting devices, and provides some examples which should be studied before proceeding with your system design. 6.1 Characteristic Drift W hen optical emission devices such as the LD or IRED are operated in the forward mode, crystal defects
|
OCR Scan
|
he8815vghe8813vghe8811he8812sg+5he8404sghe7601sghe8807he8403he1303
|
PDF
|