DARLINGTON 8A 300V Search Results
DARLINGTON 8A 300V Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| ULQ2003ADRG4 |
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Darlington Transistor Arrays 16-SOIC |
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| ULN2003ANS |
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High-Voltage, High-Current Darlington Transistor Arrays 16-SO |
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| ULQ2003ADG4 |
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Darlington Transistor Arrays 16-SOIC |
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| SN75468NE4 |
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High-Voltage, High-Current Darlington Transistor Arrays 16-PDIP 0 to 70 |
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| SN75469N |
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High-Voltage, High-Current Darlington Transistor Arrays 16-PDIP 0 to 70 |
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DARLINGTON 8A 300V Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: NTE2317 Silicon NPN Transistor High Voltage Fast Switching Power Darlington Description: The NTE2317 is a multiepitaxial bipolar NPN transistor in a monolithic Darlington configuration mounted in a TO218 type package designed for use in automotive ignition applications and inverter |
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NTE2317 NTE2317 | |
QF30AA60
Abstract: QF20AA60 TRANSISTOR JC SQD200A60 SQD300A40 SQD200A40 D 1380 Transistor SQD400BA60 20S0 sqd300a60
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SQD200A40/60 E76102 SQD200A 95max IC200A, 62max 110Tab 30max VCEX400/600V QF30AA60 QF20AA60 TRANSISTOR JC SQD200A60 SQD300A40 SQD200A40 D 1380 Transistor SQD400BA60 20S0 sqd300a60 | |
2SD648A
Abstract: 2SD648
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2SD648A S-300/te, 1000kg 2SD648A 2SD648 | |
NPN Transistor 10A 24VContextual Info: UTC BU941 NPN EPITAXIAL SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER FEATURES *NPN darlington *Integrated antiparallel collector-emitter diode 1 APPLICATIONS * High ruggedness electric ignitions TO-220 1: BASE 2:COLLECTOR 3: EMITTER |
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BU941 O-220 QW-R203-025 NPN Transistor 10A 24V | |
hFE-100
Abstract: NPN Transistor 10A 24V utc 1018 5v 10a dc driver ic NPN power Transistor 10A 24V hFE100 VCE-500V npn high voltage transistor 500v 8a 24v switching transistor transistor ignition circuit bu941
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BU941 QW-R214-004 hFE-100 NPN Transistor 10A 24V utc 1018 5v 10a dc driver ic NPN power Transistor 10A 24V hFE100 VCE-500V npn high voltage transistor 500v 8a 24v switching transistor transistor ignition circuit bu941 | |
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Contextual Info: TOSHIBA -CDISCRETE/OPTOJ 9097250 TOSHIBA ~5b D l f | ‘ÌD'ÌTESO TòC DISCRETE/OPTO 0G0774M 07 7 4^ SILICON NPN TRIPLE DIFFUSED M ESA TYPE (DARLINGTON POWER)_ . INDUSTRIAL APPLICATIONS Unit in mm HIGH POWER SWITCHING APPLICATIONS. 2-(Z5.Z±0.2 |
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0G0774M 061MAX. | |
QCA200A60
Abstract: OCA200 QCA200A40 AMP110 QCA200A-60
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QCA200A40/60 E76102 108max 10max AMP110 IC200AVCEX400/600V QCA200 OCA200 QCA200A60 OCA200 QCA200A40 AMP110 QCA200A-60 | |
BU931R
Abstract: BU932R darlington 8A 300V TC125
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BU931R BU932R BU931R 100mA 250mA BU932R darlington 8A 300V TC125 | |
QCA200A60
Abstract: OCA200 QCA200A40 AMP110
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QCA200A40/60 E76102 108max 10max AMP110 IC200AVCEX400/600V QCA200 OCA200 QCA200A60 OCA200 QCA200A40 AMP110 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BU941Z NPN SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER FEATURES * NPN Darlington * Integrated antiparallel collector-emitter diode APPLICATIONS * High ruggedness electric ignitions INTERNAL SCHEMATIC DIAGRAM |
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BU941Z BU941ZL-T3P-T BU941ZG-T3P-T BU941ZL-TA3-T BU941ZG-TA3-T O-220 QW-R214-022. QW-R214-022 | |
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Contextual Info: TRANSISTOR MODULE SQD400BA60 UL;E76102 M S Q D 4 0 0 B A 6 0 is a Darlington power transistor module with a U LTR A HIGH h F E , high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode (trr: 2 0 0 n s ). The mounting base of the module is electrically isolated |
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SQD400BA60 E76102 7TU243 | |
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Contextual Info: TRANSISTOR MODULE SQP200A40/60 UL;E76102 M S Q D 2 0 0 A is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for |
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SQP200A40/60 E76102 400/600V CI022aS SQD200A | |
BU941Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BU941 NPN SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER FEATURES * NPN Darlington * Integrated antiparallel collector-emitter diode APPLICATIONS * High ruggedness electric ignitions INTERNAL SCHEMATIC DIAGRAM |
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BU941 BU941L-T3P-T BU941G-T3P-T BU941L-TA3-T BU941G-TA3-T BU941L-TQ2-T BU941G-TQ2-T BU941L-TQ2-R BU941G-TQ2-R O-220 BU941 | |
vbe 10v, vce 500v NPN Transistor
Abstract: transistor ignition circuit bu941
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BU941 BU941-T3P-T BU941L-T3P-T BU941-TA3-T BU941L-TA3-T BU941-TQ2-T BU941L-TQ2-T BU941-TQ2-R BU941L-TQ2-R O-220 vbe 10v, vce 500v NPN Transistor transistor ignition circuit bu941 | |
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KS325520
Abstract: powerex ks32 power transistor vce 600 volt ks32 ks3220
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BP107, Amperes/600 KS325520 powerex ks32 power transistor vce 600 volt ks32 ks3220 | |
Darlington 40A
Abstract: SQD200A60 300V switching transistor Application sqd200a60 darlington 8A 300V darlington power transistor diode 300v 200A sit transistor SQD200A40 380 darlington
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SQD200A40/60 E76102 SQD200A 400/600V SQD200A40 SQD200A60 SQD200A40 Darlington 40A SQD200A60 300V switching transistor Application sqd200a60 darlington 8A 300V darlington power transistor diode 300v 200A sit transistor 380 darlington | |
ST400G22Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE ST400G22 TENTATIVE DATA INDUSTRIAL APPLICATION Unit in mm HIGH POWER SWITCHING. DC-AC POWER INVERTER. MOTOR CONTROL APPLICATION. 2-04 .O ±O .2 FEATURES: . High Voltage : V C E X S U S > 4 5 0 V . Triple Diffused Design |
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ST400G22 ST400G22 | |
BU941ZPFI
Abstract: darlington 8A 300V
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BU941ZPFI BU941ZPFI darlington 8A 300V | |
darlington 8A 300V
Abstract: 300v zener NPN Transistor 8A 8A 300V npn bu941zp 1A 300V TRANSISTOR Designed for automotive ignition applications MJW16010A 300V switching transistor Zener Diodes 300v
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darlington 8A 300V
Abstract: npn DARLINGTON 10A BU941ZPFI
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BU941ZPFI darlington 8A 300V npn DARLINGTON 10A BU941ZPFI | |
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Contextual Info: TRANSISTOR MODULES QCA200BA60 UL;E76102 M) is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paral leled fast recovery diode ( t r r : 2 0 0 n s ). The mounting base of the |
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QCA200BA60 E76102 7T11243 | |
QCA200BA60
Abstract: Diode B2x
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QCA200BA60 E76102 AMP110 10max VCEX600V hFE750 di/dt-200A/ 50msec50sec sec50msec QCA200BA60 Diode B2x | |
gto Gate Drive circuit
Abstract: TIP 133c transistor GTO SCR SCR GTO die N648 GTO MOTOROLA 12n06
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EB108 EB108/D gto Gate Drive circuit TIP 133c transistor GTO SCR SCR GTO die N648 GTO MOTOROLA 12n06 | |
BU931
Abstract: NPN Transistor 10A 24V
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BU931 O-263 BU931L-T3P-T BU931G-T3P-T BU931L-TQ2-T BU931G-TQ2-T BU931L-TQ2-R BU931G-TQ2-R BU931 NPN Transistor 10A 24V | |