Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DARLINGTON 8A 300V Search Results

    DARLINGTON 8A 300V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ULQ2003ADRG4
    Texas Instruments Darlington Transistor Arrays 16-SOIC Visit Texas Instruments
    ULN2003ANS
    Texas Instruments High-Voltage, High-Current Darlington Transistor Arrays 16-SO Visit Texas Instruments Buy
    ULQ2003ADG4
    Texas Instruments Darlington Transistor Arrays 16-SOIC Visit Texas Instruments Buy
    SN75468NE4
    Texas Instruments High-Voltage, High-Current Darlington Transistor Arrays 16-PDIP 0 to 70 Visit Texas Instruments Buy
    SN75469N
    Texas Instruments High-Voltage, High-Current Darlington Transistor Arrays 16-PDIP 0 to 70 Visit Texas Instruments Buy

    DARLINGTON 8A 300V Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: NTE2317 Silicon NPN Transistor High Voltage Fast Switching Power Darlington Description: The NTE2317 is a multiepitaxial bipolar NPN transistor in a monolithic Darlington configuration mounted in a TO218 type package designed for use in automotive ignition applications and inverter


    Original
    NTE2317 NTE2317 PDF

    QF30AA60

    Abstract: QF20AA60 TRANSISTOR JC SQD200A60 SQD300A40 SQD200A40 D 1380 Transistor SQD400BA60 20S0 sqd300a60
    Contextual Info: TRANSISTOR MODULE SQD200A40/60 UL;E76102 (M) 95max 80±0.25 23 23 ● IC=200A, 62max 48±0.25 15 (Applications) Motor Control(VVVF), AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application 4ーφ5.5 1 2 3 C1 E1 C1 B2 E2 VCEX=400/600V


    Original
    SQD200A40/60 E76102 SQD200A 95max IC200A, 62max 110Tab 30max VCEX400/600V QF30AA60 QF20AA60 TRANSISTOR JC SQD200A60 SQD300A40 SQD200A40 D 1380 Transistor SQD400BA60 20S0 sqd300a60 PDF

    2SD648A

    Abstract: 2SD648
    Contextual Info: 2SD648A SILICON NPN TRIPLE DIFFUSED MESA TYPE INDUSTRIAL APPLICATIONS Unit in mm HIGH POWER SWITCHING APPLICATIONS. 2 “ J2!5.2±Û.2 DC MOTOR CONTROL APPLICATIONS. ELECTRIC CAR APPLICATIONS. FEATURES t . High Voltage : VC E O SUS =300V . Triple Diffused Design.


    OCR Scan
    2SD648A S-300/te, 1000kg 2SD648A 2SD648 PDF

    NPN Transistor 10A 24V

    Contextual Info: UTC BU941 NPN EPITAXIAL SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER FEATURES *NPN darlington *Integrated antiparallel collector-emitter diode 1 APPLICATIONS * High ruggedness electric ignitions TO-220 1: BASE 2:COLLECTOR 3: EMITTER


    Original
    BU941 O-220 QW-R203-025 NPN Transistor 10A 24V PDF

    hFE-100

    Abstract: NPN Transistor 10A 24V utc 1018 5v 10a dc driver ic NPN power Transistor 10A 24V hFE100 VCE-500V npn high voltage transistor 500v 8a 24v switching transistor transistor ignition circuit bu941
    Contextual Info: UTC BU941 NPN EPITAXIAL SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER FEATURES *NPN darlington *Integrated antiparallel collector-emitter diode APPLICATIONS TO-3P * High ruggedness electric ignitions 1: BASE 2:COLLECTOR 3: EMITTER


    Original
    BU941 QW-R214-004 hFE-100 NPN Transistor 10A 24V utc 1018 5v 10a dc driver ic NPN power Transistor 10A 24V hFE100 VCE-500V npn high voltage transistor 500v 8a 24v switching transistor transistor ignition circuit bu941 PDF

    Contextual Info: TOSHIBA -CDISCRETE/OPTOJ 9097250 TOSHIBA ~5b D l f | ‘ÌD'ÌTESO TòC DISCRETE/OPTO 0G0774M 07 7 4^ SILICON NPN TRIPLE DIFFUSED M ESA TYPE (DARLINGTON POWER)_ . INDUSTRIAL APPLICATIONS Unit in mm HIGH POWER SWITCHING APPLICATIONS. 2-(Z5.Z±0.2


    OCR Scan
    0G0774M 061MAX. PDF

    QCA200A60

    Abstract: OCA200 QCA200A40 AMP110 QCA200A-60
    Contextual Info: TRANSISTOR MODULE QCA200A40/60 UL;E76102 (M) 108max 93±0.5 E2 B2 E2 B1X E1 B1 25.0 E2 B2X B2 C2E1 25.0 14.0 B1 C1 3-M6 L=10max AMP110 t=0.5 30.0max 33.0max 24.0max (Applications) Motor Control(VVVF), AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application


    Original
    QCA200A40/60 E76102 108max 10max AMP110 IC200AVCEX400/600V QCA200 OCA200 QCA200A60 OCA200 QCA200A40 AMP110 QCA200A-60 PDF

    BU931R

    Abstract: BU932R darlington 8A 300V TC125
    Contextual Info: SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU931R BU932R DESCRIPTION •With TO-3 package ·DARLINGTON APPLICATIONS ·Automotive ignition applications ·Inverters circuits for motor controls PINNING See Fig.2 PIN DESCRIPTION


    Original
    BU931R BU932R BU931R 100mA 250mA BU932R darlington 8A 300V TC125 PDF

    QCA200A60

    Abstract: OCA200 QCA200A40 AMP110
    Contextual Info: TRANSISTOR MODULE QCA200A40/60 UL;E76102 (M) 108max 93±0.5 E2 B2 E2 B1X E1 B1 25.0 E2 B2X B2 C2E1 25.0 14.0 B1 C1 3-M6 L=10max AMP110 t=0.5 30.0max 33.0max 24.0max (Applications) Motor Control(VVVF), AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application


    Original
    QCA200A40/60 E76102 108max 10max AMP110 IC200AVCEX400/600V QCA200 OCA200 QCA200A60 OCA200 QCA200A40 AMP110 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BU941Z NPN SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER  FEATURES * NPN Darlington * Integrated antiparallel collector-emitter diode  APPLICATIONS * High ruggedness electric ignitions  INTERNAL SCHEMATIC DIAGRAM


    Original
    BU941Z BU941ZL-T3P-T BU941ZG-T3P-T BU941ZL-TA3-T BU941ZG-TA3-T O-220 QW-R214-022. QW-R214-022 PDF

    Contextual Info: TRANSISTOR MODULE SQD400BA60 UL;E76102 M S Q D 4 0 0 B A 6 0 is a Darlington power transistor module with a U LTR A HIGH h F E , high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode (trr: 2 0 0 n s ). The mounting base of the module is electrically isolated


    OCR Scan
    SQD400BA60 E76102 7TU243 PDF

    Contextual Info: TRANSISTOR MODULE SQP200A40/60 UL;E76102 M S Q D 2 0 0 A is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for


    OCR Scan
    SQP200A40/60 E76102 400/600V CI022aS SQD200A PDF

    BU941

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BU941 NPN SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER  FEATURES * NPN Darlington * Integrated antiparallel collector-emitter diode  APPLICATIONS * High ruggedness electric ignitions  INTERNAL SCHEMATIC DIAGRAM


    Original
    BU941 BU941L-T3P-T BU941G-T3P-T BU941L-TA3-T BU941G-TA3-T BU941L-TQ2-T BU941G-TQ2-T BU941L-TQ2-R BU941G-TQ2-R O-220 BU941 PDF

    vbe 10v, vce 500v NPN Transistor

    Abstract: transistor ignition circuit bu941
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BU941 NPN SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER  FEATURES * NPN Darlington * Integrated antiparallel collector-emitter diode  APPLICATIONS * High ruggedness electric ignitions  INTERNAL SCHEMATIC DIAGRAM


    Original
    BU941 BU941-T3P-T BU941L-T3P-T BU941-TA3-T BU941L-TA3-T BU941-TQ2-T BU941L-TQ2-T BU941-TQ2-R BU941L-TQ2-R O-220 vbe 10v, vce 500v NPN Transistor transistor ignition circuit bu941 PDF

    KS325520

    Abstract: powerex ks32 power transistor vce 600 volt ks32 ks3220
    Contextual Info: POIilEREX INC m 31E D m • TSTMbEl GGD3*ìbB b « P R X n Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 SÎilÇjl& DdrlitlÇjtOn Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 T lH l l S i S t O I M o d u l G


    OCR Scan
    BP107, Amperes/600 KS325520 powerex ks32 power transistor vce 600 volt ks32 ks3220 PDF

    Darlington 40A

    Abstract: SQD200A60 300V switching transistor Application sqd200a60 darlington 8A 300V darlington power transistor diode 300v 200A sit transistor SQD200A40 380 darlington
    Contextual Info: TRANSISTOR MODULE SQD200A40/60 UL;E76102 M SQD200A is a Darlington power transistor module which a high speed, high power Darlington transistor. The transistor has a reverse paralled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for


    Original
    SQD200A40/60 E76102 SQD200A 400/600V SQD200A40 SQD200A60 SQD200A40 Darlington 40A SQD200A60 300V switching transistor Application sqd200a60 darlington 8A 300V darlington power transistor diode 300v 200A sit transistor 380 darlington PDF

    ST400G22

    Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE ST400G22 TENTATIVE DATA INDUSTRIAL APPLICATION Unit in mm HIGH POWER SWITCHING. DC-AC POWER INVERTER. MOTOR CONTROL APPLICATION. 2-04 .O ±O .2 FEATURES: . High Voltage : V C E X S U S > 4 5 0 V . Triple Diffused Design


    OCR Scan
    ST400G22 ST400G22 PDF

    BU941ZPFI

    Abstract: darlington 8A 300V
    Contextual Info: SavantIC Semiconductor Product Specification BU941ZPFI Silicon NPN Power Transistors DESCRIPTION •With TO-3PML package ·DARLINGTON ·High breakdown voltage APPLICATIONS ·High ruggedness electronic ignitions PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to


    Original
    BU941ZPFI BU941ZPFI darlington 8A 300V PDF

    darlington 8A 300V

    Abstract: 300v zener NPN Transistor 8A 8A 300V npn bu941zp 1A 300V TRANSISTOR Designed for automotive ignition applications MJW16010A 300V switching transistor Zener Diodes 300v
    Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Built In Clamping Zener ·High Operating Junction Temperature APPLICATIONS ·Designed for use in automotive environment as electronic ignition power actuators.


    Original
    PDF

    darlington 8A 300V

    Abstract: npn DARLINGTON 10A BU941ZPFI
    Contextual Info: Inchange Semiconductor Product Specification BU941ZPFI Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PML package ・DARLINGTON ・High breakdown voltage APPLICATIONS ・High ruggedness electronic ignitions PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to


    Original
    BU941ZPFI darlington 8A 300V npn DARLINGTON 10A BU941ZPFI PDF

    Contextual Info: TRANSISTOR MODULES QCA200BA60 UL;E76102 M) is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paral­ leled fast recovery diode ( t r r : 2 0 0 n s ). The mounting base of the


    OCR Scan
    QCA200BA60 E76102 7T11243 PDF

    QCA200BA60

    Abstract: Diode B2x
    Contextual Info: TRANSISTOR MODULE(Hi-β) QCA200BA60 UL;E76102 (M) 15 C1 25.0 3-M6 L=10max AMP110 t=0.5 E1 B1 Unit:A (Tj=25℃ unless otherwise specified) Item VCBO Collector-Base Voltage VCEX Collector-Emitter Voltage VEBO Emitter-Base Voltage −IC E1 B1


    Original
    QCA200BA60 E76102 AMP110 10max VCEX600V hFE750 di/dt-200A/ 50msec50sec sec50msec QCA200BA60 Diode B2x PDF

    gto Gate Drive circuit

    Abstract: TIP 133c transistor GTO SCR SCR GTO die N648 GTO MOTOROLA 12n06
    Contextual Info: EB108 Prepared by Al Pshaenich Power Products Applications RELATIVE EFFICIEN CIES OF MOTOROLA POWER SEMICONDUCTORS IN A PWM DC MOTOR CONTROLLER INTRODUCTION The prime requisite of a power switch, semiconductor or otherwise, is to transfer the maximum power to the


    OCR Scan
    EB108 EB108/D gto Gate Drive circuit TIP 133c transistor GTO SCR SCR GTO die N648 GTO MOTOROLA 12n06 PDF

    BU931

    Abstract: NPN Transistor 10A 24V
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BU931 NPN SILICON TRANSISTOR NPN POWER DARLINGTON „ FEATURES 1 * High operating junction temperature * High voltage ignition coil driver * Very rugged bipolar technology „ TO-3P INTERNAL SCHEMATIC DIAGRAM 1 TO-263 „ ORDERING INFORMATION


    Original
    BU931 O-263 BU931L-T3P-T BU931G-T3P-T BU931L-TQ2-T BU931G-TQ2-T BU931L-TQ2-R BU931G-TQ2-R BU931 NPN Transistor 10A 24V PDF