DARLINGTON 4N32 Search Results

darlington transistor C 3300

Abstract: transistor 6c x T1L119 MCA255 isocom V/MCA255 isocom
Contextual Info: ISOCOM LTD Optolink OPTOCOUPLERS PHOTO DARLINGTON With base connection Part Number 4N29 4N30 4N31 4N32 4N33 H11B1 MCA2-55 Er»i5 7 CTR O p -10m A MiN %) Optically Coupled Pair with Infrared Emitter and Photo Darlington Transistor 100 50 500 500 flF=1mA)

D223 OPTO

Abstract: darlington optocoupler cross reference MOCD217M H11AA2M MOC8204M H11AA4M H11G2M MOC3081M H11D1M 4N32M
Contextual Info: Dual Channel Small Outline Optoisolators MOCD223 Darlington Output The MOCD223 device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor darlington detectors, in a surface mountable, small outline, plastic package. It is ideally

Contextual Info: “û7 MARKTEC H INT ER NA TION AL Mf| 5 7 ^ 5 5 DARLINGTON COUPLER S7996S5 M A R K T E C H INTERNATI O N AL u 87D 00132 QDGDÎ35 fl D 4N29, 4N29A, 4N32, 4N32A GaAs INFRABED EMITTING DIODE & NPN SILICON PHOTO DARLINGTON APPLICATIONS • AC LINE/DIGITAL LOGIC ISOLATOR

Contextual Info: Photo Darlington High Sensitivity, without Base connection Part 1mA Vce«»/ - m H24B1 1Q0Q lF=5ntA 3 H24B2 400(F=5m A)3 H24B3 750 (lF=5mA) 3 ISPD60 100 ISPD61 500 ISPD62 ISPD63 ISPD64 ISPD65 MOC8020 Photo Darlington Transistor Detector Base Lead Not Connected

TRANSISTOR D 2627

Abstract: 4N32 4N33 MOTOROLA 4N29 4N29A 4N31 4N32A 2N6165 4N324
Contextual Info: 4N29,4H29A 4H30 4H31 4N32.4N324 NPN PHOTOTRANSISTOR AND PN INFRARED EMITTING DIODE . . . Gallium Arsenide LED optically coupled to a Silicon Photo Darlington Transistor designed for applications requiring electrical, isolation, high-current transfer ratios, small package size and low

DARLINGTON 4N32

Abstract: 4N33 photo darlington sensor
Contextual Info: 4N29, 4N30, 4N31, 4N32, 4N33: Optocouplers, 6 Pin Base-Connected Darlington High CTR Datasheet Hutton Close, Crowther Ind Est, Dist 3, Washington, Tyne & Wear NE38 0AH, England Email: isocom@dial.pipex.com - Tel: +44 0191 4166546 - Fax: +44 0191 4155055

4N29-4N33

Contextual Info: 57E J> ÛUALITY TECHNOLOGIES CORP Optoisolator Specifications _ 7MbbfiSl Ü00mi|4 •ÛTY 4N29, 4N29A, 4N30, 4N31, 4N32, 4N32A, 4N33 Optoisolator G aA s Infrared Emitting Diode and N PN Silicon Photo-Darlington Amplifier SY M BO L M IN E

Contextual Info: 4N29 4N30 4N31 4N32 4N33 OPTOCOUPLER Opto-isolator comprising an infrared emitting GaAs diode and a silicon npn Darlington phototransistor w ith accessible base. Plastic 6-lead dual-in-line DIL envelope. Features • Very high output/input DC current transfer ratio

opto 4N33

Abstract: 4N32-1 4N33 Data sheet 7500 IC 14 PIN 4N29 4N29A 4N30 4N31 4N32 4N33
Contextual Info: MOTOROLA Order this document by 4N29/D SEMICONDUCTOR TECHNICAL DATA 4N29 4N29A 4N30 * 4N31 4N32 * 4N33 * GlobalOptoisolator 6-Pin DIP Optoisolators Darlington Output [CTR = 100% Min] The 4N29/A, 4N30, 4N31, 4N32 1 and 4N33(1) devices consist of a gallium

K1150PG

Abstract: K1150Pg Opto Coupler opto coupler 4n35 datasheet Opto Coupler 4N33 darlington opto coupler opto coupler 4n35 purpose of opto coupler 4n35 4 channel triac opto x1 transistor K1150P
Contextual Info: Vishay Semiconductors Classification Chart for Opto Couplers General purpose 4N27/28 CTR>10% Standard 4N25/26 CTR>20% Transistor output 4N35–37 CTR>100% 6 Pin-Series Base n.c. TCDT1110 Transistor output CTR>50% High CTR 4N32/33 Darlington output CTR>500%

Contextual Info: 4N29 4N30 4N31 ÛUALITY TECHNOLOGIES CORP S7E ]> 4N32 4N33 T m4 • Ö TY s a OPTOCOUPLER Opto-isolator comprising an infrared emitting GaAs diode and a silicon npn Darlington phototransistor with accessible base. Plastic 6-lead dual-in-line DIL envelope.

GE 4N33

Abstract: 4N32-4N32A-4N33
Contextual Info: G E SOLID STATE D1 DE|3fi7S0fll □□nti74 1 Optoelectronic Specification*. 4N32 -4N32A-4N33 M IN . Ga A a Infrared Em itting D iode & NPN Silicon Photo-Darlington Amplifier c High DC current transfer ratio 2 _ High isolation resistance 2 5 0 0 volts isolation voltage

4N29

Abstract: 4N29A VDE0160 VDE0832 VDE0833 4N32-4N32A-4N33 7500 IC 14 PIN 4n32
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4N 29 4N29A 4N30 4N 31 4N32 4N32A 4N33 6 -P in D IP O p to is o la to rs Darlington Output Each device consists o f a gallium arsenide infrared em itting diode optically coupled to a m onolithic silicon photodarlington detector.

Contextual Info: Optoisolator Specifications 4N29, 4N29A, 4N30, 4N31, 4N32, 4N32A, 4N33 Optoisolator G a A s Infrared Emitting Diode and N PN Silicon Photo-Darlington Amplifier The 4N29 through 4N33 devices consist of a gallium arsenide infrared em itting diode coupled with a silicon photo-D arlington amplifier in a

DARLINGTON 4N32

Abstract: TRANSISTOR cBC 415 4N29 4N30 4N31 4N32 4N33 optocoupler 4n33 Optocoupler le 25 cew 55
Contextual Info: 4N29 4N30 4N31 4N32 4N33 T O OPTOCOUPLER Opto-isolator comprising an infrared em itting GaAsdiode and a silicon npn Darlington phototransistor w ith accessible base. Plastic 6-lead dual-in-line D IL envelope. Features • Very high o u tp u t/in p u t DC current transfer ratio

MOC223

Abstract: MOCD223M H11AA2M MOC 4N25 MOC223R2M H11AA4M MOC3062M MOC3081M 4N35M H11D1M
Contextual Info: Small Outline Optoisolators MOC223 Darlington Output These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density

H11B1

Contextual Info: 1 of 2 Hutton Close, Crowther Ind Est, Dist 3, Washington, Tyne & Wear NE38 0AH, England Email: isocom@dial.pipex.com - Tel: +44 0191 4166546 - Fax: +44 0191 4155055 Photodarlington with Base Connection Similar Circuits Optocouplers Catalogue Home Page Optically Coupled Pair with IR Emitter and Photo Darlington Transistor

4n32

Abstract: 4N33 Motorola
Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA 4N29 4N29A 4N30 4N31 4N32 4N32A 4N33 6-Pin D IP O p to is o la to r s Darlington Output Each device c o n sists of a galliu m arse nid e infrared em itting d io d e optically co up led to a m on olith ic silicon pho to d arlin gto n detector.

Opto-isolator

Contextual Info: Optoisolator Specifications 4N29, 4N29A, 4N30, 4N31, 4N32, 4N32A, 4N33 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Photo-Darlington Amplifier T he 4N 29 th ro u g h 4N 33 d evices c o n sis t o f a g a lliu m a rsen id e infrared e m ittin g dio d e co u p le d w ith a silic o n p h o to -D a rlin g to n am p lifier in a

ISTS875A

Abstract: mct isocom HIIG2 CNY17-2 H11j SFH60 HIIG3 ISTS805
Contextual Info: ISO C O M COMPONENTS LTD 4SE D H ô fib S lO I Photo Darlington 0 0 0 0 5 3 7 4 • IS O 7 = V /-7 / c o n tin u e d High Voltage, with B ase Connection i Part Number Features bvceo C urrent Transfer Ratio IF - 1 m A @ 1mA M IN (V I VCE = 2V M IN (* ) IS660

M0C3011

Abstract: photo transistor til 78 ic moc3041 ICPL2503 ICPL3700 ISTS401 IS2100G ISTS875A ISTS832SD ICPL2502
Contextual Info: ISO C O M COMPONENTS LTD 4SE D H ô fib S lO I Photo Darlington 0 0 0 0 5 3 7 4 • IS O 7 = V /-7 / c o n tin u e d High Voltage, with B ase Connection i Part Number Features bvceo C urrent Transfer Ratio IF - 1 m A @ 1mA M IN (V I VCE = 2V M IN (* ) IS660

4N29 MOTOROLA

Contextual Info: MOTOROLA O rder this docum ent by 4N29/D SEMICONDUCTOR TECHNICAL DATA & TO VDE UL ® CSA SE TI SEM KO DEM KO NEMKO BABT G lo b a lO p to iso la to r 6-P in DIP Optoisolators Darlington Output 4N 29 4N 29A 4N 30* [C TR = 100% Min] 4N31 4N 32* T he 4N 29 /A , 4N 30, 4 N 3 1 , 4 N 3 2 1 and 4 N 3 3 (1) d e vice s co n sist o f a gallium

transistor 91 330

Abstract: tlp 122 TRANSISTOR TLP635F 388 transistor R358 395 transistor transistor f 421 IC 4N25 triac 40 RIA 120
Contextual Info: 3. Alphanumeric Index Type 4N25 4N25A 4N26 4N27 4N28 4N29 4N29A 4N30 4N31 4N32 4N32A 4N33 4N35 4N36 4N37 4N38 4N38À 6N135 6N136 6N137 6N138 6N139 CNY17-L CNY17-M CNY17-N H 11AA1 H 11AA2 H11AAS H11AA4 HI 1L1 H11L3 TLP112 TLP112A TLP113 TLP115 TLP115A TLP120

SPX33

Abstract: transistor 7150 SPX53 LC 7130 4N26 Photodiode transistor 7550 4n33 4n35 04 transistor transistor lf SPX7273
Contextual Info: Optically Coupled Isolators 6 Pin Dual-in-Line UL RECOGNIZED TO 3500 VAC — FILE E58979 'Type Current transfer ratio At specified forward1 current (lF) and Vce CTR(%) min. max. lF(ma) VCE(volts) Input to output isolation voltage Collector breakdown <lc = 100 ì*A)