D45 TRANSISTOR Search Results

Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) Package (No.) Application Functions TO-126 (D52 * , D53) U Type (D41) MT2LType MT3 Type (D44) (D45) MT4 Type (D46) TO-202 (D54) T0-220(a) (D56) TO-220F

2SD1539

Abstract: d53 pnp transistor 2SC4714 2sa137 2sb1071 2SA1375 2SA1605 2SA1817 2SC2258 2SC2923
Contextual Info: Transistors Selection Guide by Applications and Functions TO-126 (D523K, D53) U Type (D41) V ceo MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F (D59) (V) 2SA1605 2SC3063 2SC2923 2SC4714 Chroma input V < n (V) lc (A) -0 .0 5

D45E2

Abstract: D45E1 D45E3 D44E D45E
Contextual Info: VERY HIGH GAIN PNP POWER DARLINGTON TRANSISTORS D45È Series -40 - -80 VOLTS -10 AMP, 50 WATTS COMPLEMENTARY TO THE D44E SERIES Applications: PNP • • • • • • • • • • Driver Regulator Capacitor Multiplier Solenoid Driver Inverter Power Supply

2SC4714

Abstract: 2SA1817 2SD1539 2SA1605 2SC2258 2SC2923 2SC3063 2SC3942 2SC3945 2SC4717
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) Package (No.) Application Functions TO-126 (D 5 2 *, D53) U Type (D41) MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F

2SA1949

Abstract: 2SC5221 2SB1526 2SD2407 2SA1951 2SD2411 2SD2412 2SB1546 2SC1398 2sc3943
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) P a ck ag e (No.) Application Functions U Type (D41) TO-126 (D52 * , D53) MT2LType MT3 Type (D44) (D45) MT4 Type (D46) TO-202 (D54) TO-220F (D59) T0-220(a)

2SA1949

Abstract: 2SC5221 2SA1950 2C156 2SB1543 2SB1545 2SC2594 Complementary Darlington Audio Power Amplifier 2SD2412 2SD2404
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) P a c k a g e (No.) Application Functions U Type (D41) TO-126 (D52 * , D53) M T 2LT ype MT3 Type (D44) (D45) MT4 Type (D46) TO-202 (D54) T0-220(a)

"Intelligent Power Device"

Contextual Info: Field Effect Transistors • IGBT Absolute M axim um Ratings Application Strobo Type No. Electrical Characteristics V ces lc lc peak V ce (sat) (V) (A) (A) (V) lc (mA) 2P G 301 400 20 130 <2.25 2PG 302 400 5 130 2PG 351 400 5 130 td (on) td (off) tf (ns)

D44 MARKING

Abstract: MARKING d45 2SD2228 hFE CLASSIFICATION Marking
Contextual Info: Transistors IC SMD Type NPN Silicon Epitaxia 2SD2228 Features High dc current. Low collector saturation voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 25 V Collector-emitter voltage

Contextual Info: Transistors IC SMD Type Product specification 2SD2228 Features High dc current. Low collector saturation voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 25 V Collector-emitter voltage

3sk287

Abstract: 3SK139 3sk247 3SK285
Contextual Info: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (No.) Appli­ Band cation TO-92 (D49) New S Type (D39) Cross Pack (Ceramic) (D37(a), D37(b) ) M Type (D40) SS Mini Type S Mini Type S Mini Type

2SA1323

Abstract: 2SC4973 2SA838 12SC1 2SC1047 2SA1739 2SA1806 2SC3811 2SC3938 2SC4691
Contextual Info: Transistors Selection Guide by Applications and Functions # High Speed Switch *VCO and High Frequency Type Package (No.) Application Functions High speed switch VCO and high freq. type S S Mini Type (D1) S Mini Type (D5) 2SA1806 2SA1739 2SA1738 2SC4691 2SC3938

2SC5021

Abstract: 2SA1888 D49 transistor TS 12164 2sc4973 2sc2188 2SC4969 panasonic silicon can tuner 2SA1738 2SA1739
Contextual Info: Transistors Selection Guide by Applications and Functions # High Speed Switch *VCO and High Frequency Type Package (No.) Application Functions High speed switch VCO and high freq. type SS Mini Type (D1) S Mini Type (D5) 2SA1806 2SA1739 2SA1738 2SC4691 2SC3938

2sc5021

Abstract: 2SA1323 2SC4969 2SA 10G 2SA838 2SC4670 2SC4973 2SC5020 2sc2188 VCO 10G
Contextual Info: Transistors Selection Guide by Applications and Functions High Speed Switch *VC O and High Frequency Type Package (No.) Application Functions SS Mini Type (D1) High speed switch VCO and high freq. type S Mini Type (D5) Mini Type (D10) 2SA1806 2SA1739 2SA1738

3sk272

Abstract: 2SK1964 2SC1215 3SK202 3SK241 3SK268 3SK144 3sk247 3SK270 3SK271
Contextual Info: Transistors Selection Guide by Applications and Functions • High Frequency Silicon Transistors for Tuners (FETs included) Package (No.) Appli­ Band cation New S Type (D39) TO-92 (D49) Cross Pack (Ceramic) (D37(a), D37(b)ss) M Type (D40) Mini Type (3 pin)

Contextual Info: bTE ]> N AMER P H IL IP S/ DI SC R ET E • bbS3T31 00 30 4 b 5 Product Specification Philips Semiconductors B U K436-200A/B Pow erM O S transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

D45 SOT23

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA G r e e L n i n e MGSF1N03LT1 Motorola Preferred Device Low rDS on Sm all-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET Part of the GreenLine Portfolio of devices with energyconserving traits.

2sd 4515

Abstract: transistors 2sd 2500 2SB1619 B1582 2sd darlington 2sc 043 2SA audio POWER TRANSISTORS 2sa 3704 25C1317 2SC4714
Contextual Info: Transistors Selébtion Guide by Applications and Functions • Silicon Small Signal Transistors • G e n e ra l-u s e Low Frequency Am plifiers and Others Package (No.) Application S S Mini Functions Type (D1) i 2SB 14 62 [ 2SD2216 S Mini Type (D5) T Mini

D45 TRANSISTOR

Abstract: MARKING d45 2SD2228
Contextual Info: DATA SHEET SILICON TRANSISTOR ELECTRON DEVICE - — ^ 2SD2228 NPN SILICON EPTAXIAL TRANSISTOR AUDIO FREQUENCY AMPLIFIER DESCRIPTION The 2SD2228 is designed fo r general-purpose applications requiring High DC Current and Low Collector Saturation Voltage. This is suitable fo r appliances including VCR cameras and headphone stereos.

D45 TRANSISTOR

Abstract: SN74AHC1G02
Contextual Info: SN74AHC1G02 SINGLE 2-INPUT POSITIVE-NOR GATE SC LS342A - APRIL 1 9 9 6 - R E V IS E D MAY 1996 • Operating Range: 2-V to 5.5-V V qc • EP/C Enhanced-Performance Implanted CMOS Process • Packaged in Plastic Small-Outline Transistor Package DBV PACKAGE

Contextual Info: SENTECH C OR P SflE » • filBS lBS POWER MOSFET’s IN HERMETIC 12 PIN ISOLATED PACKAGE □ D 0 2 cm SM4F151S* SM4F351S* 341 SM4F251S* SM4F451S* These devices offer the latest ruggedized MOSFET transistor die mounted in isolated and hermetically sealed metal packages. The standard MOSFET characteristics of very low

FIL-3C

Abstract: to-92 mosfet 13T13
Contextual Info: SÖE » SEP1TECH CORP • 013^13^ ODOBTìl OSO POWER MOSFET IN HERMETIC ISOLATED T0257AB PACKAGE SM8F13* SM8F33* SM8F23* SM8F43* These devices offer the latest ruggedized MOSFET transistor die mounted in isolated and hermetically sealed metal packages. The standard MOSFET characteristics of very low

Contextual Info: SEMTECH CORP SfiE D 6 1 3 ^ 1 3 ^ 0 D 03003 470 DUAL POWER MOSFET’s IN HERMETIC 6 PIN ISOLATED PACKAGE SET SM6F151* SM6F251* SM6F351* SM6F451* These devices offer the latest ruggedized MOSFET transistor die mounted in isolated and hermetically sealed metal packages. The standard MOSFET characteristics of very low

KC224575

Abstract: KT224515 KT224510 KC224503 pj 1339 KC-224575 KC324510 KR224505 ke721k03 KR224503
Contextual Info: m N E R E X Powerex, Inc., 200 Hillis St reet, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 42t Avenue Ci Durand, BP107, 72003 Le Mans, France (43) 41.14.14 Powerex Darlington Transistor Modules are in wide use in inverter and power supply circuits. The last

T0254AA

Contextual Info: 013^13^ 0 0 0 2 ^ 5 7Tb SflE D SEMTECH CORP POWER MOSFET IN HERMETIC ISOLATED T0254AA PACKAGE SM2F151* SM2F351* SM2F251* SM2F451* These devices offer the latest ruggedized M O SFET transistor die mounted in isolated and hermetically sealed metal packages. The standard M O SFET characteristics of very low