SM8F23 Search Results

Contextual Info: SM8F231SU Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V) I(D) Max. (A)9.0# I(DM) Max. (A) Pulsed I(D)6.0 @Temp (øC)100# IDM Max (@25øC Amb)36.0 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)50# Minimum Operating Temp (øC)-55

Contextual Info: SM8F231ST Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V) I(D) Max. (A)9.0# I(DM) Max. (A) Pulsed I(D)6.0 @Temp (øC)100# IDM Max (@25øC Amb)36.0 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)50# Minimum Operating Temp (øC)-55

FIL-3C

Abstract: to-92 mosfet 13T13
Contextual Info: SÖE » SEP1TECH CORP • 013^13^ ODOBTìl OSO POWER MOSFET IN HERMETIC ISOLATED T0257AB PACKAGE SM8F13* SM8F33* SM8F23* SM8F43* These devices offer the latest ruggedized MOSFET transistor die mounted in isolated and hermetically sealed metal packages. The standard MOSFET characteristics of very low

Contextual Info: SM8F231SF Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V) I(D) Max. (A)9.0# I(DM) Max. (A) Pulsed I(D)6.0 @Temp (øC)100# IDM Max (@25øC Amb)36.0 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)50# Minimum Operating Temp (øC)-55