D2S TRANSISTOR Search Results
D2S TRANSISTOR Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| 2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 | Datasheet | ||
| TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold | Datasheet | ||
| TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold | Datasheet | ||
| TTA012 |
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PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini | Datasheet | ||
| TPCP8514 |
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NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 | Datasheet |
D2S TRANSISTOR Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: DEM-DAI3793A/3794A EVM User's Guide July 2007 AIP Consumer Audio—TI Japan SBAU127 2 SBAU127 – July 2007 Submit Documentation Feedback Contents Preface . 9 |
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DEM-DAI3793A/3794A SBAU127 | |
d2s diode
Abstract: d2s 28 diode BU2507DX
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BU2507DX d2s diode d2s 28 diode BU2507DX | |
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Contextual Info: MITSUBISHI ELEK {LINEAR} b2 D EI bSM'ïôSb DGG4DCI4 S | •jz^-25’ INDUSTRY STANDARD X MITSUBISHI LIN^ R M2001 SEMICONDUCTORS 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION The M2001 7-channel sink driver consists of 14 NPN transistors |
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M2001 500mA M2001 | |
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Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for |
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BU2522AF 1E-06 | |
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Contextual Info: Philips Semiconductors Product Specification BUK542-1OOA/B PowerMOS transistor J - o g ic J te v e lF E T ^ ^ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in |
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BUK542-1OOA/B BUK542 -100A -100B PINNING-SOT186 | |
BUK638-500BContextual Info: N AMER PHILIPS/DISCRETE bTE I> • bbS3T31 0030675 Philips semiconductors PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. REDFET with fast recovery reverse diode, particularly suitable |
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BUK638-500B | |
BUK436-100A
Abstract: BUK436-100B
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BUK436-100A/B -100A -100B 00304b4 BUK436-1OOA/B BUK436-100A BUK436-100B | |
B 647 AC transistor
Abstract: uav specification transistor 2TH
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BUK452-60A/B BUK472-60A/B BUK472 T186A B 647 AC transistor uav specification transistor 2TH | |
transistor 7gContextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION PHP10N10E QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies |
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PHP10N10E T0220AB transistor 7g | |
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Contextual Info: - 7^ - 3 Philips Com ponents Data sheet status Preliminary specification date of issue March 1991 Replaces BUK541-100A/B N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in |
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BUK571-100A/B 711002b BUK541-100A/B BUK571 -100A | |
BUK442-100A
Abstract: BUK442-100B
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K442-1OOA/B EUK442 -100A OT186 BUK442-100A BUK442-100B | |
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Contextual Info: Preliminary Specification Philips Semiconductors PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device Is intended for use in automotive and general purpose |
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BUK556-60H T0220AB | |
diode d2sContextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding, DC/DC and AC/DC |
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PHP10N10E T0220AB diode d2s | |
DIODE T25 4 EO
Abstract: B44 transistor 711002b BUK456-60H T0220AB PHILIPS fw 373
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711002b BUK456-60H T0220AB DIODE T25 4 EO B44 transistor BUK456-60H T0220AB PHILIPS fw 373 | |
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c17f
Abstract: IE-02 BUK436-100A BUK436-100B
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7110fl2b c17fl BUK436-100A/B BUK436 -100A -100B /C-\15 c17f IE-02 BUK436-100A BUK436-100B | |
atheros
Abstract: transistor wes BUK436-100B c17f BUK436-100A
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7110fl2b c17fl BUK436-100A/B BUK436 -100A -100B 711002b atheros transistor wes BUK436-100B c17f BUK436-100A | |
T3D DIODE
Abstract: T3D 45 diode T3D 55 diode T3D 18 DIODE Diode T3D 03 Diode T3D 35 dt t3d 13 BUK552 BUK552-100A BUK552-100B
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0D307flS BUK552-100A/B T0220AB BUK552 -100A -100B T3D DIODE T3D 45 diode T3D 55 diode T3D 18 DIODE Diode T3D 03 Diode T3D 35 dt t3d 13 BUK552-100A BUK552-100B | |
BUK444
Abstract: 3BS transistor BUK444-800A BUK444-800B buk444 800
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0D305LI5 BUK444-800A/B OT186 BUK444 3BS transistor BUK444-800A BUK444-800B buk444 800 | |
TRANSISTOR BC 208
Abstract: transistor BC 568 AC/DC tig smps tig welding tig welding 100-P BUK442 BUK442-100A BUK442-100B
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BUK442-100A/B PINNING-SOT186 TRANSISTOR BC 208 transistor BC 568 AC/DC tig smps tig welding tig welding 100-P BUK442 BUK442-100A BUK442-100B | |
BUK581-100A
Abstract: DD3003
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0030fl3t, BUK58Ã -100A OT223 aD30a41 BUK581 OT223. BUK581-100A DD3003 | |
transistor BC 568
Abstract: dgb3t 100-P BUK442 BUK442-100A BUK442-100B smps tig welding transistor BC 209
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BUK442-100A/B PINNING-SOT186 -ID/100 transistor BC 568 dgb3t 100-P BUK442 BUK442-100A BUK442-100B smps tig welding transistor BC 209 | |
BUK452-60A
Abstract: BUK452-60B T0220AB
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BUK452-60A/B T0220AB BUK452 -ID/100 BUK452-60A BUK452-60B | |
Transistor C1173
Abstract: L1210 tyco resolver C1173 transistor transistor c929 Transistor C1173 1A Tx C1173 transistor 6ED100HP1-FA C1211 transistor C1161
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inR214 R0402 R0603 3314J Transistor C1173 L1210 tyco resolver C1173 transistor transistor c929 Transistor C1173 1A Tx C1173 transistor 6ED100HP1-FA C1211 transistor C1161 | |
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Contextual Info: MITSUBISHI TRANSISTOR MODULES QM50E2Y/E3Y-H MEDIUM POWER SWITCHING USE INSULATED TYPE ! Q M 50E2Y/E3Y-H • lc • • • • Collector current. 50A VCEX Collector-emitter voltage.600V hFE DC current gain. 75 |
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QM50E2Y/E3Y-H 50E2Y/E3Y-H E80276 E80271 | |