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BUK436-100A Abstract: BUK436-100B Contextual Info: N AMER P H I L I P S / D I S C R E T E b*lE D • bbSa^Bl 0a3QMb0 T l f l ■ APX Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	buk436-100a/b -100a -100b 00304b4 +3buk436-1ooa/b buk436-100a buk436-100b	PDF

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BUK436-100A

Abstract: BUK436-100B
Contextual Info: N AMER P H I L I P S / D I S C R E T E b*lE D • bbSa^Bl 0a3QMb0 T l f l ■ APX Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

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buk436-100a/b -100a -100b 00304b4 +3

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