BUK581 Search Results

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK581-100A Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK581-100A Logic tevel FET _ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount

K581-100A

Abstract: K5811 BU100
Contextual Info: Philips Semi c on du ct or s Pr oduct Specification BUK581-100A P o w e rM O S transistor L o g i c level F E T G E N E R A L DE SCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount

TRANSISTOR LD25

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK581-100A Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope

BUK581-100A

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor Logic level FET BUK581-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications.

BUK581-100A

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor Logic level FET BUK581-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications.

transistor 911

Abstract: transistor k 911
Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK581-60A Logic level FET _ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount

Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor BUK581-100A Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope

Contextual Info: N AUER PHILIPS/BISCRETE bRE D bb53331 □□30630 804 B A P X Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope

BUK581-100A

Abstract: DD3003
Contextual Info: tiTE D N AMER P H I L I P S / D I S C R E T E • b bS BT a i □03Dfl3tj 25 2 ■ APX Product Specification Philips Semiconductors PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope

buk7530-55

Abstract: mosfet-n SOT166 TOPFET buk7530
Contextual Info: SELECTION GUIDE Page TOPFETs 14 PowerMOS Transistors 16 Insulated Gate Bipolar Transistors 23 Philips Semiconductors TOPFETs VDS Selection Guide @ID FUSION O) (V) (A) Id w Pd (W) TYPE NUMBER TECHNOLOGY ENVELOPE 50 0.028 25 50 125 BUK106-50L TOPFET SOT263

Mosfet catalogue

Abstract: mosfet 200A buk444 200B 220AB
Contextual Info: Philips Semiconductors Concise Catalogue 1996 PowerMOS transistors including TOPFETs and IGBTs P O W E R S E M IC O N D U C T O R S POWERMOS TRANSISTORS INCLUDING TOPFETS ^D S ^ D S o n (V) (O) 100 100 0.9 1.1 200 200 200 200 200 200 200 200 200 200 200

Contextual Info: N AUER PHILIPS/DISCRETE bRE ]> bb53T31 Q030fl3t, 252 B A P X Product Specification Philips Semiconductors PowerMOS transistor Logic level FET_ _ _ G E N E R A L D E SC R IP TIO N N-channel enhancement mode logic level field-effect power

Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in

BUK444-200

Abstract: 100a mosfet Philips Semiconductors Selection Guide BUK454-60H BUK108-50DL BUK102-50GL BUk2 BUK44 BUK9630-55 BUK9570-55
Contextual Info: Philips Semiconductors TOPFETs Selection Guide VDs Rdsion lD Id V) (fl) (A) (A) Pd (W) TYPE NUMBER TECHNOLOGY ENVELOPE 50 0.028 25 50 125 BUK106-50L TOPFET 50 0.028 25 50 125 BUK106-50LP TOPFET SOT263-O1 50 0.028 25 50 125 BUK116-50L TOPFET SOT426 50

837 mosfet

Abstract: 912 MOSFET T0-220AB PHILIPS MOSFET igbt BUK108-50DL 50SP 200b mosfet MOSFET 1053 mosfet handbook
Contextual Info: Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Types added to the range since the last issue of data handbook SC13 1995 are shown in bold print. TYPE NUMBER TECHNOLOGY PACKAGE BUK100-50DL TOPFET T0220AB PAGE 38 BUK100-50GL TOPFET

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

BUK581-60A

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in

ph 4148 zener diode

Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Contextual Info: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS

GOT223

Abstract: 100-P BUK581-60A TRANSISTOR BO 341
Contextual Info: PHILIPS I N T E R N A T I O N A L LSE D • 711002b Q O m H b b Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level fleld-effect power transistor in a plastic envelope suitable for surface mount applications.

BS107 spice

Abstract: BS108 spice K9614 Philips Semiconductors Selection Guide BUK7535-55 K9514 PHD69N03LT bsh201 SFE 7.2 k75-10
Contextual Info: Philips Semiconductors PowerMOS Transistors Selection guide POWERMOS SELECTION GUIDE Vos V RoS(ori) (Ohm) @Id (A) tamax (A) Pûmax (W) TYPE NUMBER TECHNOLOGY PACKAGE PAGE 25 0.01 25 75 142 PHB87N03LT L2 TrenchMOS N SOT404 1656 25 0.01 25 75 142 PHP87N03LT

BUK581-60A

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in

Zener Diode 3v 400mW

Abstract: transistor bc548b BC107 transistor TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DIAC OB3 DIAC Br100 74HCT IC family spec TRANSISTOR mosfet BF998
Contextual Info: INDEX Order Code Description Page Number – Philips Semiconductors 1 485-068 DS750 Development Kit 1 527-749 87C750 Hardware Kit 1 – Philips Semiconductors Data Communications UART Product Line 2 790-590 80C51 In a Box 3 – 80C51 Family Features 3 –