BBS3831 Search Results

Contextual Info: N AUER PHILIPS/BISCRETE bRE D bb53331 □□30630 804 B A P X Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope

Contextual Info: N AMER PHILIPS /DISC RE TE bTE D • htjS3T31 DOSOTOD TSfl H A P X Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION Fast-switching N-channel insulated gate bipolar power transistor in a plastic envelope.

Contextual Info: bbsa'm Philips Sem iconductors 0024012 2T2 • a p x N-channel silicon field-effect transistors N AUER PHIL IPS /DISCR ETE Preliminary specification J308/309/310 b?E PIN CONFIGURATION FEATURES • Low noise • Interchangeability of drain and source connections

Contextual Info: Philips Sem iconductors b bS 3T 31 0D 3240D 22fl M A P V Product specification BGY587B CATV amplifier module N AMER PHILIPS/DISCRETE PINNING-SOT115C FEATURES PIN • Excellent linearity PIN CONFIGURATION DESCRIPTION • Extremely low noise 1 input • Silicon nitride passivation

Contextual Info: N AP1ER PHILIPS/PISCRETE b'lE D bb53T31 D03D675 T73 * A P X Product Specification Philips semiconductors PowerMOS transistor BUK638-500B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

Contextual Info: Philips Semiconductors bb 5 3 S 31 0 0 2 T 2 b 7 72A H APX Product specification UHF push-pull power transistor BLV948 N AMER PHILIPS/DISCRETE FEATURES • Double input and output matching for easy matching and high gain • Poly-silicon emitter-ballasting

BT 1840 PA

Contextual Info: • Philips Semiconductors ^ ■ APX bb53T31 0024641 350 ■ N AUER PHI LIP S/DISCRETE NPN 8 GHz wideband transistor FEATURES Product specification b7E — BFG67; BFG67/X; BFG67R; BFG67/XR ■ PINNING 4 PIN 3 DESCRIPTION • High power gain • Low noise figure

y1 npn

Abstract: 538 NPN transistor
Contextual Info: bbS3R31 0Q2Mb37 Qb6 H A P X Philips Semiconductors N AMER PHILIPS/DISCRETE Product specification b7E » NPN 1 GHz wideband transistor FEATURES e BF547 PINNING • Stable oscillator operation • High current gain • Good thermal stability. PIN DESCRIPTION

Contextual Info: N AMER PHILIPS/DISCRETE b b S B ' i a i □QSt17Q5 2flb WAPX b'JE D X BLY89C V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized

Contextual Info: b b 5 3 c1 3 1 Philips S em iconductors 0030055 T27 M A P X Product specification VHF linear push-pull power MOS transistor BLF348 N AUER PHILIPS/DISCRETE b 'lE lT PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability

Contextual Info: Philips Semiconductors bbSBTBl 0025104 251 H A P X Product specification PNP 1 GHz switching transistor ^— ^ “ N AUER PHILIPS/DISCRETE FEATURES PINNING • Low cost PIN 1 The PMBTH81 is a general purpose silicon pnp transistor, encapsulated in a SOT23 plastic envelope. Its