D070908 Search Results

Contextual Info: TN2524 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

DN5m

Abstract: sot-89 marking dn
Contextual Info: DN3545 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► These depletion-mode normally-on transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

VN2460N8-G

Abstract: TRANSISTOR LIZ
Contextual Info: VN2460 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with

VP3203N3-G

Abstract: sivp
Contextual Info: VP3203 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► The Supertex VP3203 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

Contextual Info: TN2435 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

Contextual Info: TP2522 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

VN2450N8-G

Abstract: vn4ew
Contextual Info: VN2450 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with

b0914

Contextual Info: TP2510 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination

Contextual Info: TP2435 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

Contextual Info: TN2504 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

Contextual Info: TP2424 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

Contextual Info: VN2460 N-Channel Enhancement-Mode Vertical DMOS FETs General Description Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain

Contextual Info: TN2435 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage This low threshold, enhancement-mode normally-off

Contextual Info: TP2435 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling

Contextual Info: DN2530 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description The DN2530 is a low threshold depletion-mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.

Contextual Info: TN2524 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling

sivn

Abstract: vn4f mark A E sot-89 VN2460 125OC SOT89 mos VN2460N8-G 3V02 VN2460N3-G
Contextual Info: VN2460 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with

fet sot-89 marking code

Abstract: FET SOT-89 N-Channel tn5l fet sot-89 product marking MARKING CODE BV sot-89 TN2504
Contextual Info: TN2504 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

HV9922

Abstract: mosfet triggering circuit self resonant driver mosfet ac switch DC DC converter 50mA 400V input 30v to 135v AC and 7.5v DC Switch power LINEAR REGULATOR sot-89 HV9922N3-G HV9922N8-G MUR160
Contextual Info: HV9922 3-Pin Switch-Mode LED Lamp Driver IC Features General Description ► ► ► ► The HV9922 is a pulse width modulated PWM highefficiency LED driver control IC. It allows efficient operation of LED strings from voltage sources ranging up to 400VDC. The

DN3135K1-G

Abstract: b1031 sot-89 MARKING CODE ab 125OC DN3135 DN3135N8-G
Contextual Info: DN3135 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► The Supertex DN3135 is a low threshold depletion-mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate

TP2522ND

Abstract: TP2522 TP2522N8-G
Contextual Info: TP2522 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

H1 SOT-89 amplifier

Abstract: DN5DW DN2540 H1 marking SOT-89 transistor marking codes transistors a1 sot-89 marking n5 amplifier SOT-89 sot-89 MARKING CODE ab sot-89 marking N5 DN2540N3-G DN2540N5
Contextual Info: DN2540 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► The Supertex DN2540 is a low threshold depletion mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate

4 to 20ma current source circuit diagram

Abstract: CL1K4 marking n3 MARKING CODE B3 sot-89 LED DRIVE AC MARKING VA VB MARKING L4 SOT89
Contextual Info: CL1 Simple, 90V, 20mA, Temperature Compensated, Constant Current, LED Driver IC Features General Description ► ► ► ► The Supertex CL1 is a high voltage, temperature compensated, constant current source. The device is trimmed to provide a constant current of 20mA±5% at an input voltage of 45V. No

transistor marking code 12W SOT-23

Abstract: 12w SOT 23 package marking code marking 12W SOT23 LND150 12w marking code of transistor sot 23 12w sot-23 sot-23 12w 12W MARKING sot23 LN1E Nd150
Contextual Info: LND150 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown