CYPRESS 7C130 Search Results

27HC642

Abstract: 39C10B PAL22V10APC CY2254SC-1 7132SA70 93L422AM 7024S15 7130SA25 7C198-45C 7006S
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 2147-35C 27S07AC 7C190-25C 7C171A-35C 7C171A-25C 2147-45C 7C147-45C 27S07AM 7C190-25M 7C171A-45M 7C171A-35M+ 2147-45M+

EPM5128LC

Abstract: EPM5128GC epm5064lc-1 EPM5128LC1 59628867809r 5962-8984106LX EPM5128GI 7C19945DMB EPM5130GC-1 5962-8867812rx
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 5962-8753903LX 5962-8753902LX CY21L49-55C CY21L49-45C CY7C281 CY7C281A 5962-8863701LX 5962-8753902LX CY6116A-45C CY6116A-35C CY7C286 CY27H512 5962-8867003LX 5962-8867002LX CY6116A-55C CY6116A-45C

EPM5128LC

Abstract: IDT CYPRESS CROSS REFERENCE clocks epm5064lc-1 EPM5128LC-1 EPM5064LC EPM5128LC-2 EPM5128GI EPM5128JC-1 8464c 5962-8871309
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2148-35C CY21L48-35C CY7C168A-35C CY7C168A-25C 5962-8871309XX 5962-89839112X CY2148-35C CY7C148-35C CY7C168A-45M CY7C168A-35M+ 5962-8871310RX 5962-8983913RX CY2148-35M CY7C148-35M CY7C169A-35C

ATPA

Abstract: 7130SA100P 24l01 7C263/4-35C 7164S15Y cy9122-25 7133SA35J 7142sa55 7130sa55p cy2149-45c
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2147-35C CY7C147-35C CY7C147-45C CY7C147-35C CY91L22-35C CY7C122-35C CY2147-45C CY2147-35C CY7C148-35C CY7C148-25C+ CY91L22-45C CY93L422AC CY2147-45C CY7C147-45C CY7C148-45C CY7C148-35C

Hitachi-CEL9200

Abstract: CY7C109 JESD22
Contextual Info: Cypress Semiconductor Qualification Report QTP# 97201 VERSION 2.0 February, 1998 1 Meg SRAM, R32D Technology, Fab 4 Qualification CY7C109/CY7C1009 128K x 8 SRAM 5V Operation CY7C109V33/CY7C1009V33 128K x 8 SRAM (3.3V Operation) Cypress Semiconductor, Inc.

CY7C136

Abstract: ablestik 84-1LMISR4 Nitto MP 8000
Contextual Info: Cypress Semiconductor Qualification Report QTP# 98482 VERSION 1.0 March, 1999 5V Asynchronous Dual Port SRAM - R28 Technology - Fab 2 CY7C130/131/140/141 1K x 8 Dual Port SRAM CY7C132/136/142/146 2K x 8 Dual Port SRAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA:

96182

Abstract: 9715 cy7c136
Contextual Info: Cypress Semiconductor Qualification Report QTP# 97045/97154 VERSION 1.1 April, 1997 Dual Port SRAM - R28 Technology CY7C130/131 1K x 8 Dual Port SRAM CY7C140/141 1K x 8 Dual Port SRAM CY7C132/136 2K x 8 Dual Port SRAM CY7C142/146 2K x 8 Dual Port SRAM Cypress Semiconductor

B057r

Abstract: cv7c130 CY7C130 CY7C131 CY7C140 CY7C141 Zl13
Contextual Info: CYPRESS SEMI CONDUCTOR 4bE D • 2 5 0 ^ 2 ''-T ^ C r L V O * ODDbBMO 1 E S C Y P C Y 7 C 1 3 0 /C Y 7 C 1 3 1 C Y 7 C 1 4 0 /C Y 7 C 1 4 1 CYPRESS SEMICONDUCTOR 1024 x 8 Dual-Port Static RAM Features Functional Description • 0,8-micron CMOS for optimum

7C1312

Abstract: Cypress 7C130
Contextual Info: CY7C130/CY7C131 CY7C140/CY7C141 CYPRESS SEMICONDUCTOR Features Functional Description • 0.8-micron CMOS for optimum speed/power • Automatic power-down • TTL compatible • Capable of withstanding greater than 2001V electrostatic discharge • Fully asynchronous operation

Contextual Info: CY7C130/CY7C131 CY7C140/CY7C141 CYPRESS SEMICONDUCTOR Features Functional Description • 0.8-micron CMOS for optimum speed/power • Automatic power-down • TTL compatible • Capable of withstanding greater than 2001V electrostatic discharge • Fully asynchronous operation

7C130

Abstract: L1314
Contextual Info: CY7C130/CY7C131 CY7C140/CY7C141 _ 1024 x 8 Dual-Port Static RAM aT ^ p -¿r CYPRESS ^ SEMICONDUCTOR E ach p o rt has independent control pins; chip enable C E , w rite enable (RyW), and output The CY 7C130/CY7C131/CY7C140/ enable (O E ). TVvo flags are p rovided on each

Contextual Info: ^ S' CY7C130/CY7C131 CY7C140/CY7C141 mm CYPRESS SEMICONDUCTOR • 1024 x 8 Dual-Port Static RAM Features Functional Description • 0.8-micron CMOS for optimum speed/power • Automatic power-down • TTL compatible • Capable of withstanding greater than

Zl13

Abstract: ZL12 CY7C130 CY7C131 CY7C140 CY7C141 IDT7130 IDT7140 C1308 wj 75
Contextual Info: CY7C130/CY7C131 CY7C140/CY7C141 W CYPRESS Features • 0.8-micron CMOS for optimum speed/power • Automatic power-down • TTL compatible • Capable o f withstanding greater than 2001V electrostatic discharge • Fully asynchronous operation • Master CY7C130/CY7C131 easily ex­

z131

Abstract: Z1314 893Q C140 CY7C130 CY7C131 CY7C140 CY7C141 TSGB
Contextual Info: CYPRESS SEMI CONDUCTOR bSE D • 258ThbE DDGT73M 5TB, «CYP CY7C130/CY7C131 CY7C140/CY7C141 PY ppT ?cq SEMICONDUCTOR Features Functional Description • 0.8-micron CMOS for optimum speed/power • Automatic power-down • 1TL compatible • Capable of withstanding greater than

cy7c131-55nc

Abstract: ZT12 CY7C130 CY7C131 CY7C140 CY7C141 IDT7130 IDT7140
Contextual Info: CY7C130/CY7C131 CY7C140/CY7C141 W CYPRESS Features • 0.8-micron CMOS for optimum speed/power • Automatic power-down • TTL compatible • Capable o f withstanding greater than 2001V electrostatic discharge • Fully asynchronous operation • Master CY7C130/CY7C131 easily ex­

3246A

Contextual Info: fax id: 5200 CY7C130/CY7C131 CY7C140/CY7C141 CYPRESS 1K x 8 Dual-Port Static RAM Functional Description Features True Dual-Ported memory ceils which allow simulta­ neous reads of the same memory location 1K x 8 organization 0.65-micron CMOS for optimum speed/power

Contextual Info: fax id: 5200 CY7C130/CY7C131 CY7C140/CY7C141 W CYPRESS 1K x 8 Dual-Port Static Ram Features Functional Description True Dual-Ported memory cells which allow simulta­ neous reads of the same memory location 1K x 8 organization 0.65-micron CMOS for optimum speed/power

pic 08m

Contextual Info: CYPRESS Features • 0.8-m icron C M OS for optim um speed/power • Automatic power-down • TTL com patible • Capable of w ithstanding greater than 2001V electrostatic discharge • Fully asynchronous operation • M aster CY7CI30/CY7CI31 easily ex­ pands data bus width to 16 or more

ebe switches

Abstract: CY7C130 CY7C131 CY7C140 CY7C141 7CJ41-25 7CI40-35
Contextual Info: CYPRESS SEMICONDUCTOR 00 0 3 4 2 1 EbE D 5 • CY7C130/CY7C131 CY7C140/CY7C141 -Z Z A Z . o y n p rrQ C 1024 x 8 Dual-Port Static RAM SEMICONDUCTOR Features Functional Description • 0,8-micron CMOS for optimum speed/power • Automatic power-down • TTL-compatible

81c78

Abstract: 7C291 5962-8515505RX 27PC256-12 PAL164A 8464C 5C6408 72018 39C10B MACH110 cross reference
Contextual Info: Product Line Cross Reference CYPRESS 2147-35C 2147-45C 2147-45C 2147-45M+ 2147-55C 2147-55M 2148-35C 2148-35C 2148-35M 2148-45C 2148-45C 2148-45M 2148-45M+ 2148-55C 2148-55C 2148-55M 2149-35C 2149-35C 2149-35M 2149-45C 2149-45M 2149-45M 2149-55C 2149-55C 2149-55M

Contextual Info: fax id: 5200 C Y 7 C 1 3 0 /C Y 7 C 1 31 W CYPRESS C Y 7 C 1 4 0 /C Y 7 C 1 41 1K x 8 Dual-Port Static Ram Features Functional Description True Dual-Ported memory cells which allow sim ulta­ neous reads of the same mem ory location 1K x 8 organization 0.65-micron CMOS for optimum speed/power

CY7C

Abstract: 7C141
Contextual Info: CY7C130/CY7C131 CY7C14Ü/CY7C141 CYPRESS SEMICONDUCTOR 1024 x 8 Dual-Port Static RAM F eatu res F u n c tio n a l D escrip tio n • 0.8-m icron CM OS for optimum speed/power T he CY7C 130/C Y 7C 131/C Y 7C 140/ CY7C141 are high-speed CM OS IK by 8 dual-port static RAMs. Two ports are pro­

CY7C1302V25

Abstract: CY7C1302V25-133BZC
Contextual Info: yy 7c1302V25: Rev 1.0 Revised: February 15, 2000 CY7C1302V25 Advanced Information 9-Mb Pipelined SRAM with QDR Architecture Features Functional Description • Separate Independent Read and Write Data Ports — Supports concurrent transactions • 167-MHz Clock for High Bandwidth

Contextual Info: CY7C130 1 K x 8 Dual-Port Static RAM 1 K × 8 Dual-Port Static RAM Features Functional Description • True dual-ported memory cells, which allow simultaneous reads of the same memory location ■ 1 K × 8 organization ■ 0.65 micron CMOS for optimum speed and power