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CGH55015F Datasheets (5)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
CGH55015F1		Cree/Wolfspeed	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET HEMT 28V 440196	Original	PDF	1.07MB
CGH55015F2		Cree	RF FETs, Discrete Semiconductor Products, FET RF HEMT 5.65GHZ 84V 440166	Original	PDF		10
CGH55015F2-AMP		Wolfspeed	CGH55015F2 DEV BOARD WITH HEMT	Original	PDF	1.83MB
CGH55015F2-AMP		Wolfspeed	CGH55015F2 DEV BOARD WITH HEMT	Original	PDF	1.65MB
CGH55015F-TB		Cree	RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD DEMO AMP CIRCUIT CGH55015F	Original	PDF		12

CGH55015F Price and Stock

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MACOM


MACOM CGH55015F2 Trans RF MOSFET N-CH 120V 1.5A 3-Pin Case 440166
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Richardson RFPD	CGH55015F2		2		100	1 - 10 - 100 $99.24 1000 $99.24 10000 $99.24	Buy Now
MACOM CGH55015F2-AMP CGH55015F2 RF FET Evaluation Board
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Richardson RFPD	CGH55015F2-AMP				2	1 - 10 - 100 - 1000 - 10000 -	Get Quote

CGH55015F Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
RO4350 Abstract: RO4350B transistor 0882 docsis V 8623 transistor 32QAM CGH55015F1 2J302 CGH5501 CGH55015 Contextual Info: CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/	Original	cgh55015f1 cgh55015p1 cgh55015f1/cgh55015p1 cgh55015f1/+11cgh5501 cgh55 015f1 ro4350 ro4350b transistor 0882 docsis v 8623 transistor 32qam 2j302 cgh55015	PDF
CGH55015F2 Abstract: CGH5501 smd transistor s2p CGH55015P2 CGH55015-TB cgh55 hemt .s2p RO4350B max torque CGH55015 CGH55015F Contextual Info: CGH55015F2 / CGH55015P2 10 W, C-band, Unmatched, GaN HEMT Cree’s CGH55015F2/CGH55015P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F2/	Original	cgh55015f2 cgh55015p2 cgh55015f2/cgh55015p2 cgh55015f2/+9cgh5501 cgh55 015f2 smd transistor s2p cgh55015-tb hemt .s2p ro4350b max torque cgh55015 cgh55015f	PDF
CGH55015F2 Abstract: transistor 9014 smd 9014 SMD CGH40010 CGH5501 CGH55015 CGH55015F CGH55015P2 CGH55015-TB Contextual Info: CGH55015F2 / CGH55015P2 10 W, C-band, Unmatched, GaN HEMT Cree’s CGH55015F2/CGH55015P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F2/	Original	cgh55015f2 cgh55015p2 cgh55015f2/cgh55015p2 cgh55015f2/+9cgh5501 cgh55 015f2 transistor 9014 smd 9014 smd cgh40010 cgh55015 cgh55015f cgh55015-tb	PDF
CGH55015F1 Contextual Info: CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/CGH55015P1	Original	cgh55015f1 cgh55015p1 cgh55015f1/cgh55015p1 cgh55015f1/+3cgh5501 cgh55 015f1	PDF
Contextual Info: CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/CGH55015P1	Original	cgh55015f1 cgh55015p1 cgh55015f1/cgh55015p1 cgh55015f1/+3cgh5501 cgh55 015f1	PDF
transistor 15478 Abstract: TRANSISTOR SMD 9014 transistor 9014 smd CGH55015F2 data sheet transistor 9014 Contextual Info: CGH55015F2 / CGH55015P2 10 W, C-band, Unmatched, GaN HEMT Cree’s CGH55015F2/CGH55015P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F2/	Original	cgh55015f2 cgh55015p2 cgh55015f2/cgh55015p2 cgh55015f2/+7cgh5501 cgh55 015f2 transistor 15478 transistor smd 9014 transistor 9014 smd data sheet transistor 9014	PDF
CGH55015F1 Abstract: CGH55015P1 CGH5501 CGH55015 CGH55015-TB VCGH55015F Contextual Info: CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/CGH55015P1	Original	cgh55015f1 cgh55015p1 cgh55015f1/cgh55015p1 cgh55015f1/+6cgh5501 cgh55 015f1 cgh55015 cgh55015-tb vcgh55015f	PDF
Contextual Info: CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/CGH55015P1	Original	cgh55015f1 cgh55015p1 cgh55015f1/cgh55015p1 cgh55015f1/+3cgh5501 cgh55 015f1	PDF
CGH55015F Abstract: transistor 0882 32QAM cgh55015 256QAM CGH5501 CGH55015F-TB CGH55015-TB VCGH55015F RO4350B Contextual Info: CGH55015F 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F ideal for 5.5-5.8 GHz WiMAX and	Original	cgh55015f cgh5501 cgh55015 transistor 0882 +632qam 256qam cgh55015f-tb cgh55015-tb vcgh55015f ro4350b	PDF
17975 Abstract: CGH55015F1 cgh55015 CGH5501 CGH55015P1 CGH55015-TB VCGH55015F 2J302 Contextual Info: CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/	Original	cgh55015f1 cgh55015p1 cgh55015f1/cgh55015p1 cgh55015f1/+8cgh5501 cgh55 015f1 17975 cgh55015 cgh55015-tb vcgh55015f 2j302	PDF
TRANSISTOR SMD 9014 Abstract: CGH40010F transistor 9014 smd 9014 transistor smd CGH55015F2 CGH5501 CGH55015 CGH55015F CGH55015P2 CGH55015-TB Contextual Info: CGH55015F2 / CGH55015P2 10 W, C-band, Unmatched, GaN HEMT Cree’s CGH55015F2/CGH55015P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F2/	Original	cgh55015f2 cgh55015p2 cgh55015f2/cgh55015p2 cgh55015f2/+10cgh5501 cgh55 015f2 transistor smd 9014 cgh40010f transistor 9014 smd 9014 transistor smd cgh55015 cgh55015f cgh55015-tb	PDF
CGH09120F Abstract: CGH25120F CDPA21480 CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F Contextual Info: Gallium Nitride GaN HEMT Transistors for BTS Applications Cree’s Doherty CDPA21480, performance. CGH21240F demonstration provides amplifier innovative The amplifier devices with uses digital two CDPA21480 Spectrum at 2.11, 2.14 & 2.17 GHz PAVE = 49 dBm, 2-Carrier WCDMA, PAR = 7.5 dB with CFR	Original	cdpa21480 cgh21240f cgh09120f cgh25120f +6cgh27060f ofdm predistortion cgh55030f 440117 cgh21120f cgh27015f	PDF
Contextual Info: PRELIMINARY CGH55015 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities,	Original	cgh55015 cgh5501 cgh55015f	PDF