CGH55015 Search Results

CGH55015 Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
CGH55015F1		Cree/Wolfspeed	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET HEMT 28V 440196	Original	PDF	1.07MB
CGH55015F2		Cree	RF FETs, Discrete Semiconductor Products, FET RF HEMT 5.65GHZ 84V 440166	Original	PDF		10
CGH55015F2-AMP		Wolfspeed	CGH55015F2 DEV BOARD WITH HEMT	Original	PDF	1.83MB
CGH55015F2-AMP		Wolfspeed	CGH55015F2 DEV BOARD WITH HEMT	Original	PDF	1.65MB
CGH55015F-TB		Cree	RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD DEMO AMP CIRCUIT CGH55015F	Original	PDF		12

CGH55015 Price and Stock

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MACOM CGH55015F2-AMP CGH55015F2 DEV BOARD WITH HEMT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CGH55015F2-AMP	Box	2		1	1 $752.15 10 $752.15 100 $752.15 1000 $752.15 10000 $752.15	Buy Now
Richardson RFPD	CGH55015F2-AMP				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
MACOM CGH55015F2 RF MOSFET HEMT 28V 440166
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CGH55015F2	Tray			1	1 $147.87 10 $125.15 100 $116.05 1000 $116.05 10000 $116.05	Buy Now
Mouser Electronics	CGH55015F2					1 $156.77 10 $156.77 100 $156.77 1000 $156.77 10000 $156.77	Get Quote
Richardson RFPD	CGH55015F2		2		1	1 $154.26 10 $154.26 100 $154.26 1000 $154.26 10000 $154.26	Buy Now
Wolfspeed CGH55015F2
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Chip Stock	CGH55015F2		224			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Wolfspeed CGH55015F1 Transistors
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	CGH55015F1		1,643			1 - 10 - 100 - 1000 - 10000 -	Get Quote

CGH55015 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
RO4350 Abstract: RO4350B transistor 0882 docsis V 8623 transistor 32QAM CGH55015F1 2J302 CGH5501 CGH55015 Contextual Info: CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/	Original	CGH55015F1 CGH55015P1 CGH55015F1/CGH55015P1 CGH55015F1/ CGH55015P1 CGH5501 CGH55 015F1 RO4350 RO4350B transistor 0882 docsis V 8623 transistor 32QAM 2J302 CGH5501 CGH55015	PDF
CGH55015F2 Abstract: CGH5501 smd transistor s2p CGH55015P2 CGH55015-TB cgh55 hemt .s2p RO4350B max torque CGH55015 CGH55015F Contextual Info: CGH55015F2 / CGH55015P2 10 W, C-band, Unmatched, GaN HEMT Cree’s CGH55015F2/CGH55015P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F2/	Original	CGH55015F2 CGH55015P2 CGH55015F2/CGH55015P2 CGH55015F2/ CGH55015P2 CGH5501 CGH55 015F2 CGH5501 smd transistor s2p CGH55015-TB cgh55 hemt .s2p RO4350B max torque CGH55015 CGH55015F	PDF
CGH55015F2 Abstract: transistor 9014 smd 9014 SMD CGH40010 CGH5501 CGH55015 CGH55015F CGH55015P2 CGH55015-TB Contextual Info: CGH55015F2 / CGH55015P2 10 W, C-band, Unmatched, GaN HEMT Cree’s CGH55015F2/CGH55015P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F2/	Original	CGH55015F2 CGH55015P2 CGH55015F2/CGH55015P2 CGH55015F2/ CGH55015P2 CGH5501 CGH55 015F2 transistor 9014 smd 9014 SMD CGH40010 CGH5501 CGH55015 CGH55015F CGH55015-TB	PDF
CGH55015F1 Contextual Info: CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/CGH55015P1	Original	CGH55015F1 CGH55015P1 CGH55015F1/CGH55015P1 CGH55015F1/ CGH55015P1 CGH5501 CGH55 015F1	PDF
Contextual Info: CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/CGH55015P1	Original	CGH55015F1 CGH55015P1 CGH55015F1/CGH55015P1 CGH55015F1/ CGH55015P1 CGH5501 CGH55 015F1	PDF
transistor 15478 Abstract: TRANSISTOR SMD 9014 transistor 9014 smd CGH55015F2 data sheet transistor 9014 Contextual Info: CGH55015F2 / CGH55015P2 10 W, C-band, Unmatched, GaN HEMT Cree’s CGH55015F2/CGH55015P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F2/	Original	CGH55015F2 CGH55015P2 CGH55015F2/CGH55015P2 CGH55015F2/ CGH55015P2 CGH5501 CGH55 015F2 transistor 15478 TRANSISTOR SMD 9014 transistor 9014 smd data sheet transistor 9014	PDF
CGH55015F1 Abstract: CGH55015P1 CGH5501 CGH55015 CGH55015-TB VCGH55015F Contextual Info: CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/CGH55015P1	Original	CGH55015F1 CGH55015P1 CGH55015F1/CGH55015P1 CGH55015F1/CGH55015P1 CGH55015F1/ CGH55015P1 CGH5501 CGH55 015F1 CGH5501 CGH55015 CGH55015-TB VCGH55015F	PDF
Contextual Info: CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/CGH55015P1	Original	CGH55015F1 CGH55015P1 CGH55015F1/CGH55015P1 CGH55015F1/CGH55015P1 CGH55015F1/ CGH55015P1 CGH5501 CGH55 015F1	PDF
Contextual Info: PRELIMINARY CGH55015 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities,	Original	CGH55015 CGH55015 CGH5501 CGH55015F	PDF
CGH55015F Abstract: transistor 0882 32QAM cgh55015 256QAM CGH5501 CGH55015F-TB CGH55015-TB VCGH55015F RO4350B Contextual Info: CGH55015F 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F ideal for 5.5-5.8 GHz WiMAX and	Original	CGH55015F CGH55015F CGH5501 CGH55015 transistor 0882 32QAM 256QAM CGH5501 CGH55015F-TB CGH55015-TB VCGH55015F RO4350B	PDF
17975 Abstract: CGH55015F1 cgh55015 CGH5501 CGH55015P1 CGH55015-TB VCGH55015F 2J302 Contextual Info: CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/	Original	CGH55015F1 CGH55015P1 CGH55015F1/CGH55015P1 CGH55015F1/ CGH55015P1 CGH5501 CGH55 015F1 17975 cgh55015 CGH5501 CGH55015-TB VCGH55015F 2J302	PDF
TRANSISTOR SMD 9014 Abstract: CGH40010F transistor 9014 smd 9014 transistor smd CGH55015F2 CGH5501 CGH55015 CGH55015F CGH55015P2 CGH55015-TB Contextual Info: CGH55015F2 / CGH55015P2 10 W, C-band, Unmatched, GaN HEMT Cree’s CGH55015F2/CGH55015P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F2/	Original	CGH55015F2 CGH55015P2 CGH55015F2/CGH55015P2 CGH55015F2/ CGH55015P2 CGH5501 CGH55 015F2 TRANSISTOR SMD 9014 CGH40010F transistor 9014 smd 9014 transistor smd CGH5501 CGH55015 CGH55015F CGH55015-TB	PDF
CGH09120F Abstract: CGH25120F CDPA21480 CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F Contextual Info: Gallium Nitride GaN HEMT Transistors for BTS Applications Cree’s Doherty CDPA21480, performance. CGH21240F demonstration provides amplifier innovative The amplifier devices with uses digital two CDPA21480 Spectrum at 2.11, 2.14 & 2.17 GHz PAVE = 49 dBm, 2-Carrier WCDMA, PAR = 7.5 dB with CFR	Original	CDPA21480, CGH21240F CDPA21480 CGH09120F CGH25120F CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F	PDF
Design of GaN HEMT Transistor Based Amplifiers for 5 - 6 GHz WiMAX Applications Abstract: CGH55030 CGH55030-TB Tower Mounted Amplifiers GaN Bias 25 watt cgh55015 CGH55015-TB RO4350 rogers MICROWAVE TRANSISTOR Contextual Info: Design of GaN HEMT Transistor Based Amplifiers for 5 - 6 GHz WiMAX Applications Bradley J. Millon1, Simon M. Wood, Raymond S. Pengelly Cree Inc. 3026 E Cornwallis Rd Research Triangle Park, NC 27709, USA 1 brad_millon@cree.com Abstract — 2.5 and 5 Watt average power 15 and 30 Watt peak	Original	5030-TB Design of GaN HEMT Transistor Based Amplifiers for 5 - 6 GHz WiMAX Applications CGH55030 CGH55030-TB Tower Mounted Amplifiers GaN Bias 25 watt cgh55015 CGH55015-TB RO4350 rogers MICROWAVE TRANSISTOR	PDF