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CGH55015F1 Datasheets (1)

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Cree/Wolfspeed

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
CGH55015F1		Cree/Wolfspeed	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET HEMT 28V 440196	Original	PDF	1.07MB

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Wolfspeed


Wolfspeed CGH55015F1
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Vyrian	CGH55015F1		730			1 - 10 - 100 - 1000 - 10000 -	Get Quote

CGH55015F1 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
RO4350 Abstract: RO4350B transistor 0882 docsis V 8623 transistor 32QAM CGH55015F1 2J302 CGH5501 CGH55015 Contextual Info: CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/	Original	cgh55015f1 cgh55015p1 cgh55015f1/cgh55015p1 cgh55015f1/+11cgh5501 cgh55 015f1 ro4350 ro4350b transistor 0882 docsis v 8623 transistor 32qam 2j302 cgh55015	PDF
CGH55015F1 Contextual Info: CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/CGH55015P1	Original	cgh55015f1 cgh55015p1 cgh55015f1/cgh55015p1 cgh55015f1/+3cgh5501 cgh55 015f1	PDF
Contextual Info: CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/CGH55015P1	Original	cgh55015f1 cgh55015p1 cgh55015f1/cgh55015p1 cgh55015f1/+3cgh5501 cgh55 015f1	PDF
CGH55015F1 Abstract: CGH55015P1 CGH5501 CGH55015 CGH55015-TB VCGH55015F Contextual Info: CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/CGH55015P1	Original	cgh55015f1 cgh55015p1 cgh55015f1/cgh55015p1 cgh55015f1/+6cgh5501 cgh55 015f1 cgh55015 cgh55015-tb vcgh55015f	PDF
Contextual Info: CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/CGH55015P1	Original	cgh55015f1 cgh55015p1 cgh55015f1/cgh55015p1 cgh55015f1/+3cgh5501 cgh55 015f1	PDF
17975 Abstract: CGH55015F1 cgh55015 CGH5501 CGH55015P1 CGH55015-TB VCGH55015F 2J302 Contextual Info: CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/	Original	cgh55015f1 cgh55015p1 cgh55015f1/cgh55015p1 cgh55015f1/+8cgh5501 cgh55 015f1 17975 cgh55015 cgh55015-tb vcgh55015f 2j302	PDF