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    CGH5501 Search Results

    CGH5501 Datasheets (5)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    CGH55015F1
    Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET HEMT 28V 440196 Original PDF 1.07MB
    CGH55015F2
    Cree RF FETs, Discrete Semiconductor Products, FET RF HEMT 5.65GHZ 84V 440166 Original PDF 10
    CGH55015F2-AMP
    Wolfspeed CGH55015F2 DEV BOARD WITH HEMT Original PDF 1.83MB
    CGH55015F2-AMP
    Wolfspeed CGH55015F2 DEV BOARD WITH HEMT Original PDF 1.65MB
    CGH55015F-TB
    Cree RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD DEMO AMP CIRCUIT CGH55015F Original PDF 12
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    CGH5501 Price and Stock

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    MACOM CGH55015F2

    GaN FETs GaN HEMT 4.5-6.0GHz, 10 Watt
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CGH55015F2 140
    • 1 $150.82
    • 10 $118.37
    • 100 $118.37
    • 1000 $118.37
    • 10000 $118.37
    Buy Now
    Richardson RFPD CGH55015F2 2 100
    • 1 -
    • 10 -
    • 100 $99.24
    • 1000 $99.24
    • 10000 $99.24
    Buy Now

    MACOM CGH55015F2-AMP

    RF Development Tools 15W, 5.5GHz, 830157F2, GaN HEMT, FLANGE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CGH55015F2-AMP
    • 1 -
    • 10 $1289.14
    • 100 $1289.14
    • 1000 $1289.14
    • 10000 $1289.14
    Get Quote
    Richardson RFPD CGH55015F2-AMP 2
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
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    TT Electronics Resistors CGH-5-50-1005-J

    RES,THICK FILM,10MOHMS,20KWV,5+/-% TOL,-50,50PPM-TC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components CGH-5-50-1005-J 72
    • 1 $9.00
    • 10 $4.50
    • 100 $3.90
    • 1000 $3.90
    • 10000 $3.90
    Buy Now

    CGH5501 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    RO4350

    Abstract: RO4350B transistor 0882 docsis V 8623 transistor 32QAM CGH55015F1 2J302 CGH5501 CGH55015
    Contextual Info: CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/


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    cgh55015f1cgh55015p1cgh55015f1/cgh55015p1cgh55015f1/+11cgh5501cgh55015f1ro4350ro4350btransistor 0882docsisv 8623 transistor32qam2j302cgh55015 PDF

    CGH55015F2

    Abstract: CGH5501 smd transistor s2p CGH55015P2 CGH55015-TB cgh55 hemt .s2p RO4350B max torque CGH55015 CGH55015F
    Contextual Info: CGH55015F2 / CGH55015P2 10 W, C-band, Unmatched, GaN HEMT Cree’s CGH55015F2/CGH55015P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F2/


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    cgh55015f2cgh55015p2cgh55015f2/cgh55015p2cgh55015f2/+9cgh5501cgh55015f2smd transistor s2pcgh55015-tbhemt .s2pro4350b max torquecgh55015cgh55015f PDF

    CGH55015F2

    Abstract: transistor 9014 smd 9014 SMD CGH40010 CGH5501 CGH55015 CGH55015F CGH55015P2 CGH55015-TB
    Contextual Info: CGH55015F2 / CGH55015P2 10 W, C-band, Unmatched, GaN HEMT Cree’s CGH55015F2/CGH55015P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F2/


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    cgh55015f2cgh55015p2cgh55015f2/cgh55015p2cgh55015f2/+9cgh5501cgh55015f2transistor 9014 smd9014 smdcgh40010cgh55015cgh55015fcgh55015-tb PDF

    CGH55015F1

    Contextual Info: CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/CGH55015P1


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    cgh55015f1cgh55015p1cgh55015f1/cgh55015p1cgh55015f1/+3cgh5501cgh55015f1 PDF

    Contextual Info: CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/CGH55015P1


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    cgh55015f1cgh55015p1cgh55015f1/cgh55015p1cgh55015f1/+3cgh5501cgh55015f1 PDF

    transistor 15478

    Abstract: TRANSISTOR SMD 9014 transistor 9014 smd CGH55015F2 data sheet transistor 9014
    Contextual Info: CGH55015F2 / CGH55015P2 10 W, C-band, Unmatched, GaN HEMT Cree’s CGH55015F2/CGH55015P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F2/


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    cgh55015f2cgh55015p2cgh55015f2/cgh55015p2cgh55015f2/+7cgh5501cgh55015f2transistor 15478transistor smd 9014transistor 9014 smddata sheet transistor 9014 PDF

    CGH55015F1

    Abstract: CGH55015P1 CGH5501 CGH55015 CGH55015-TB VCGH55015F
    Contextual Info: CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/CGH55015P1


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    cgh55015f1cgh55015p1cgh55015f1/cgh55015p1cgh55015f1/+6cgh5501cgh55015f1cgh55015cgh55015-tbvcgh55015f PDF

    Contextual Info: CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/CGH55015P1


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    cgh55015f1cgh55015p1cgh55015f1/cgh55015p1cgh55015f1/+3cgh5501cgh55015f1 PDF

    Contextual Info: PRELIMINARY CGH55015 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities,


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    cgh55015cgh5501cgh55015f PDF

    CGH55015F

    Abstract: transistor 0882 32QAM cgh55015 256QAM CGH5501 CGH55015F-TB CGH55015-TB VCGH55015F RO4350B
    Contextual Info: CGH55015F 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F ideal for 5.5-5.8 GHz WiMAX and


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    cgh55015fcgh5501cgh55015transistor 0882+632qam256qamcgh55015f-tbcgh55015-tbvcgh55015fro4350b PDF

    17975

    Abstract: CGH55015F1 cgh55015 CGH5501 CGH55015P1 CGH55015-TB VCGH55015F 2J302
    Contextual Info: CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/


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    cgh55015f1cgh55015p1cgh55015f1/cgh55015p1cgh55015f1/+8cgh5501cgh55015f117975cgh55015cgh55015-tbvcgh55015f2j302 PDF

    TRANSISTOR SMD 9014

    Abstract: CGH40010F transistor 9014 smd 9014 transistor smd CGH55015F2 CGH5501 CGH55015 CGH55015F CGH55015P2 CGH55015-TB
    Contextual Info: CGH55015F2 / CGH55015P2 10 W, C-band, Unmatched, GaN HEMT Cree’s CGH55015F2/CGH55015P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F2/


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    cgh55015f2cgh55015p2cgh55015f2/cgh55015p2cgh55015f2/+10cgh5501cgh55015f2transistor smd 9014cgh40010ftransistor 9014 smd9014 transistor smdcgh55015cgh55015fcgh55015-tb PDF

    CGH09120F

    Abstract: CGH25120F CDPA21480 CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F
    Contextual Info: Gallium Nitride GaN HEMT Transistors for BTS Applications Cree’s Doherty CDPA21480, performance. CGH21240F demonstration provides amplifier innovative The amplifier devices with uses digital two CDPA21480 Spectrum at 2.11, 2.14 & 2.17 GHz PAVE = 49 dBm, 2-Carrier WCDMA, PAR = 7.5 dB with CFR


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    cdpa21480cgh21240fcgh09120fcgh25120f+6cgh27060fofdm predistortioncgh55030f440117cgh21120fcgh27015f PDF

    EIA 549 Class 130B transformer

    Abstract: mcf 300.04 capacitor 225 35k 844 SMD av 1.40.00 mkt x2 .01uf NTC 20K honeywell 1000 rpm dc motor 12v 100watt BO 680Y clarostat POTENTIOMETER 73JA SMD MARKING CODE 503b 03028BR
    Contextual Info: ND3% BASE1 XXXX0118-0396-1-P 396 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 20-07-11 Hour: 11:09 TS:TS date TS time CAPACITORS Find Datasheets Online CERAMIC CAPACITORS MULTILAYER CERAMIC CAPACITORS - 0.5pF TO 82,000pF 2 MULTILAYER CERAMIC CAPACITORS - 0.5pF TO 82,000pF CONT.


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    000pf0201zd103kat2a0201zc103kat2a0201yc101kat2a+150201yc271kat2a0201yc471kat2a02013a1r0cat2a02013a4r7cat2a02013a100jat2aeia 549 class 130b transformermcf 300.04capacitor 225 35k 844 smdav 1.40.00 mkt x2 .01ufntc 20k honeywell1000 rpm dc motor 12v 100wattbo 680yclarostat potentiometer 73jasmd marking code 503b03028br PDF