CGH27030F Search Results

CGH27030F Datasheets (1)

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Cree

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
CGH27030F		Cree	30 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX	Original	PDF	702.39KB	8

CGH27030F Price and Stock

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MACOM


MACOM CGH27030F GaN FETs GaN HEMT VHF-3.0GHz, 30 Watt
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	CGH27030F					1 $176.22 10 $139.23 100 $139.23 1000 $139.23 10000 $139.23	Get Quote
Richardson RFPD	CGH27030F				100	1 - 10 - 100 $117.25 1000 $117.25 10000 $117.25	Buy Now
MACOM CGH27030F-AMP RF Development Tools AMPLIFIER ASSY, 2.3 - 2.7GHz, INCLUDES C
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	CGH27030F-AMP					1 - 10 $1973.15 100 $1973.15 1000 $1973.15 10000 $1973.15	Get Quote
Richardson RFPD	CGH27030F-AMP				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote

CGH27030F Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
PAR ofdm Abstract: CGH27030 CGH27030F CGH27030-TB RO4350B 10UF 470PF str f 3626 Contextual Info: CGH27030F 30 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030F ideal for 2.32.9GHz WiMAX and BWA amplifier applications. The transistor is supplied	Original	cgh27030f cgh2703 par ofdm cgh27030 +5cgh27030-tb ro4350b 10uf 470pf str f 3626	PDF
transistor 17556 Abstract: 17556 transistor TC 9147 10UF 470PF CGH27030F CGH27030-TB transistor 9047 Contextual Info: PRELIMINARY CGH27030F 30 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030F ideal for 2.32.9GHz WiMAX and BWA amplifier applications. The transistor is supplied	Original	cgh27030f cgh2703 transistor 17556 17556 transistor +5tc 9147 10uf 470pf cgh27030-tb transistor 9047	PDF
CGH09120F Abstract: CGH25120F CDPA21480 CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F Contextual Info: Gallium Nitride GaN HEMT Transistors for BTS Applications Cree’s Doherty CDPA21480, performance. CGH21240F demonstration provides amplifier innovative The amplifier devices with uses digital two CDPA21480 Spectrum at 2.11, 2.14 & 2.17 GHz PAVE = 49 dBm, 2-Carrier WCDMA, PAR = 7.5 dB with CFR	Original	cdpa21480 cgh21240f cgh09120f cgh25120f +6cgh27060f ofdm predistortion cgh55030f 440117 cgh21120f cgh27015f	PDF
A High Efficiency Doherty Amplifier with Digital Predistortion for WiMAX Abstract: CGH27030 op4400 200w power amplifier PCB layout GaN amplifier 100W 200w mono OP44 100w car amplifier GaN Bias 25 watt ultrarf Contextual Info: From December 2008 High Frequency Electronics Copyright 2008 Summit Technical Media, LLC High Frequency Design DOHERTY AMPLIFIER A High Efficiency Doherty Amplifier with Digital Predistortion for WiMAX By Simon Wood and Ray Pengelly, Cree, Inc., and Jim Crescenzi, Central Coast Microwave Design, LLC	Original	a high efficiency doherty amplifier with digital predistortion for wimax cgh27030 op4400 200w power amplifier pcb layout +6gan amplifier 100w 200w mono op44 100w car amplifier gan bias 25 watt ultrarf	PDF
Contextual Info: CGH27030 30 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27030 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030	Original	cgh27030 cgh2703 27030f cgh27030f	PDF
on 5295 transistor Abstract: CGH27030 CGH27030F CGH27030-TB CGH40025F JESD22 Contextual Info: CGH27030 30 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27030 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030	Original	cgh27030 cgh2703 27030f cgh27030f +4on 5295 transistor cgh27030-tb cgh40025f jesd22	PDF
on 5295 transistor Abstract: CGH27030 CGH27030F CGH27030-TB JESD22 CGH27030 s 27015F Contextual Info: CGH27030 30 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27030 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030	Original	cgh27030 cgh2701 27015f cgh27030f +4on 5295 transistor cgh27030-tb jesd22 cgh27030 s	PDF
440166 Abstract: CGH27030 s str 6808 transistor j326 CGH27030f 3-500z Contextual Info: CGH27030 30 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27030 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030	Original	cgh27030 cgh2703 27030f cgh27030f +5440166 cgh27030 s str 6808 transistor j326 3-500z	PDF
CGH27030 Abstract: 3-500z Contextual Info: CGH27030 30 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27030 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030	Original	cgh27030 cgh2703 27030f cgh27030f +13-500z	PDF