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CGH27030 Datasheets (4)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
CGH27030F		Cree	30 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX	Original	PDF	702.39KB	8
CGH27030P		Wolfspeed	30W, GAN HEMT, 28V, DC-6.0GHZ, P	Original	PDF	1.66MB
CGH27030S		Cree/Wolfspeed	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET HEMT 28V 12DFN	Original	PDF	1.06MB
CGH27030S-AMP1		Wolfspeed	AMPLIFIER, 1.8-2.2GHZ, CGH27030S	Original	PDF	1.19MB

CGH27030 Price and Stock

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MACOM


MACOM CGH27030S GaN FETs GaN HEMT DC-6.0GHz, 30 Watt
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	CGH27030S		140			1 $93.98 10 $78.49 100 $75.66 1000 $75.66 10000 $75.66	Buy Now
MACOM CGH27030P GaN FETs GaN HEMT VHF-3.0GHz, 30 Watt
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	CGH27030P		48			1 $144.11 10 $136.11 100 $133.54 1000 $133.54 10000 $133.54	Buy Now
Richardson RFPD	CGH27030P				50	1 - 10 - 100 - 1000 - 10000 -	Get Quote
MACOM CGH27030F GaN FETs GaN HEMT VHF-3.0GHz, 30 Watt
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	CGH27030F					1 $176.22 10 $139.23 100 $139.23 1000 $139.23 10000 $139.23	Get Quote
Richardson RFPD	CGH27030F				100	1 - 10 - 100 $117.25 1000 $117.25 10000 $117.25	Buy Now
MACOM CGH27030S-AMP2 M/A-COM Technology Solutions AMPLIFIER ASSY, 2.3 - 2.7GHz, INCLUDES C
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	CGH27030S-AMP2					1 - 10 $2535.02 100 $2535.02 1000 $2535.02 10000 $2535.02	Get Quote
MACOM CGH27030S-AMP1 RF Development Tools AMPLIFIER ASSY, 1.8 - 2.2GHz, INCLUDES C
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	CGH27030S-AMP1					1 - 10 $1975.83 100 $1975.83 1000 $1975.83 10000 $1975.83	Get Quote
Richardson RFPD	CGH27030S-AMP1				2	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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CGH27030 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
PAR ofdm Abstract: CGH27030 CGH27030F CGH27030-TB RO4350B 10UF 470PF str f 3626 Contextual Info: CGH27030F 30 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030F ideal for 2.32.9GHz WiMAX and BWA amplifier applications. The transistor is supplied	Original	cgh27030f cgh2703 par ofdm cgh27030 +5cgh27030-tb ro4350b 10uf 470pf str f 3626	PDF
transistor 17556 Abstract: 17556 transistor TC 9147 10UF 470PF CGH27030F CGH27030-TB transistor 9047 Contextual Info: PRELIMINARY CGH27030F 30 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030F ideal for 2.32.9GHz WiMAX and BWA amplifier applications. The transistor is supplied	Original	cgh27030f cgh2703 transistor 17556 17556 transistor +5tc 9147 10uf 470pf cgh27030-tb transistor 9047	PDF
Contextual Info: CGH27030 30 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27030 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030	Original	cgh27030 cgh2703 27030f cgh27030f	PDF
on 5295 transistor Abstract: CGH27030 CGH27030F CGH27030-TB CGH40025F JESD22 Contextual Info: CGH27030 30 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27030 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030	Original	cgh27030 cgh2703 27030f cgh27030f +4on 5295 transistor cgh27030-tb cgh40025f jesd22	PDF
on 5295 transistor Abstract: CGH27030 CGH27030F CGH27030-TB JESD22 CGH27030 s 27015F Contextual Info: CGH27030 30 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27030 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030	Original	cgh27030 cgh2701 27015f cgh27030f +4on 5295 transistor cgh27030-tb jesd22 cgh27030 s	PDF
Contextual Info: CGH27030S 30 W, DC - 6.0 GHz, 28 V, GaN HEMT Cree’s CGH27030S is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030S ideal for LTE, 4G Telecom	Original	cgh27030s cgh2703	PDF
Contextual Info: CGH27030S 30 W, DC - 6.0 GHz, 28 V, GaN HEMT Cree’s CGH27030S is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030S ideal for LTE, 4G Telecom	Original	cgh27030s cgh2703	PDF
440166 Abstract: CGH27030 s str 6808 transistor j326 CGH27030f 3-500z Contextual Info: CGH27030 30 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27030 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030	Original	cgh27030 cgh2703 27030f cgh27030f +5440166 cgh27030 s str 6808 transistor j326 3-500z	PDF
CGH27030 Abstract: 3-500z Contextual Info: CGH27030 30 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27030 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030	Original	cgh27030 cgh2703 27030f cgh27030f +13-500z	PDF
CGH09120F Abstract: CGH25120F CDPA21480 CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F Contextual Info: Gallium Nitride GaN HEMT Transistors for BTS Applications Cree’s Doherty CDPA21480, performance. CGH21240F demonstration provides amplifier innovative The amplifier devices with uses digital two CDPA21480 Spectrum at 2.11, 2.14 & 2.17 GHz PAVE = 49 dBm, 2-Carrier WCDMA, PAR = 7.5 dB with CFR	Original	cdpa21480 cgh21240f cgh09120f cgh25120f +6cgh27060f ofdm predistortion cgh55030f 440117 cgh21120f cgh27015f	PDF
High Efficiency, High Linearity GaN HEMT Amplifiers for WiMAX Applications Abstract: ofdm amplifier NEc hemt CGH35015 power amplifier circuit diagram with pcb layout amplifiers circuit diagram CGH35015S GaN amplifier GaN photo diode operational amplifier discrete schematic Contextual Info: From June 2007 High Frequency Electronics Copyright 2007 Summit Technical Media, LLC High Frequency Design WiMAX AMPLIFIERS High Efficiency, High Linearity GaN HEMT Amplifiers for WiMAX Applications U. H. Andre, R. S. Pengelly, A. R. Prejs and S. M. Wood, Cree Inc., and	Original	high efficiency, high linearity gan hemt amplifiers for wimax applications ofdm amplifier nec hemt cgh35015 +6power amplifier circuit diagram with pcb layout amplifiers circuit diagram cgh35015s gan amplifier gan photo diode operational amplifier discrete schematic	PDF
A High Efficiency Doherty Amplifier with Digital Predistortion for WiMAX Abstract: CGH27030 op4400 200w power amplifier PCB layout GaN amplifier 100W 200w mono OP44 100w car amplifier GaN Bias 25 watt ultrarf Contextual Info: From December 2008 High Frequency Electronics Copyright 2008 Summit Technical Media, LLC High Frequency Design DOHERTY AMPLIFIER A High Efficiency Doherty Amplifier with Digital Predistortion for WiMAX By Simon Wood and Ray Pengelly, Cree, Inc., and Jim Crescenzi, Central Coast Microwave Design, LLC	Original	a high efficiency doherty amplifier with digital predistortion for wimax cgh27030 op4400 200w power amplifier pcb layout +6gan amplifier 100w 200w mono op44 100w car amplifier gan bias 25 watt ultrarf	PDF