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    CGH2701 Search Results

    CGH2701 Datasheets (3)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    CGH27015F
    		Cree 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Original PDF 1.53MB 8
    CGH27015P
    		Wolfspeed 15W, GAN HEMT, 28V, DC-6.0GHZ, P Original PDF 1.6MB
    CGH27015P
    		Wolfspeed 15W, GAN HEMT, 28V, DC-6.0GHZ, P Original PDF 1.6MB
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    CGH2701 Price and Stock

    MACOM

    MACOM CGH27015F-AMP

    CGH27015F RF FET Evaluation Board
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Richardson RFPD CGH27015F-AMP 2
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    MACOM CGH27015P

    Trans RF MOSFET N-CH 120V 1.5A 3-Pin Case 440196
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Richardson RFPD CGH27015P 50
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    MACOM CGH27015F

    Trans RF MOSFET N-CH 120V 1.5A 3-Pin Case 440166
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Richardson RFPD CGH27015F 100
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    MACOM CGH27015

    INSTOCK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip 1 Exchange CGH27015 4
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    CGH2701 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    CGH27015

    Abstract: CGH27015F CGH27015-TB CGH40010F JESD22 cgh40010 18pF
    Contextual Info: CGH27015 15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for VHF, Comms, 3G, 4G, LTE,


    Original     		cgh27015cgh270127015pcgh27015f+5cgh27015-tbcgh40010fjesd22cgh4001018pf PDF

    CGH27015-TB

    Abstract: CGH27015 CGH27015F JESD22
    Contextual Info: CGH27015 15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for VHF, Comms, 3G, 4G, LTE,


    Original     		cgh27015cgh270127015pcgh27015-tb+2cgh27015fjesd22 PDF

    Contextual Info: PRELIMINARY CGH27015 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for 2.3 to 2.9GHz WiMAX


    Original     		cgh27015cgh270127015p PDF

    Contextual Info: PRELIMINARY CGH27015 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for 2.3 to 2.9GHz WiMAX


    Original     		cgh27015cgh2701 PDF

    Contextual Info: PRELIMINARY CGH27015 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for 2.3 to 2.9GHz WiMAX


    Original     		cgh27015cgh2701 PDF

    CGH27015S

    Contextual Info: PRELIMINARY CGH27015S 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27015S is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, which


    Original     		cgh27015scgh2701 PDF

    STR W 5753 a

    Abstract: str w 5753 str 5753 CGH27015-TB 10UF 470PF CGH27015 CGH27015F 44019
    Contextual Info: CGH27015 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for 2.3 to 2.9GHz WiMAX


    Original     		cgh27015cgh270127015pstr w 5753 a+7str w 5753str 5753cgh27015-tb10uf470pfcgh27015f44019 PDF

    CGH27015-TB

    Abstract: CGH27015
    Contextual Info: CGH27015 15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for VHF, Comms, 3G, 4G, LTE,


    Original     		cgh27015cgh270127015pcgh27015-tb PDF

    CGH27015S

    Abstract: 003536 54-619 msl 9351 06752
    Contextual Info: PRELIMINARY CGH27015S 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27015S is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, which


    Original     		cgh27015scgh270100353654-619+2msl 935106752 PDF

    ofdm amplifier

    Contextual Info: PRELIMINARY CGH27015F 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for 2.3 to 2.9GHz WiMAX


    Original     		cgh27015fcgh27015cgh2701ofdm amplifier PDF

    Contextual Info: CGH27015 15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for VHF, Comms, 3G, 4G, LTE,


    Original     		cgh27015cgh270127015p PDF

    CGH27015F-TB

    Abstract: amplifier circuit ofdm amplifier cree rf 10UF 470PF CGH27015 CGH27015F CGH27015-TB TRANSISTOR A98
    Contextual Info: PRELIMINARY CGH27015F 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for 2.3 to 2.9GHz WiMAX


    Original     		cgh27015fcgh27015cgh2701cgh27015f-tb+7amplifier circuitofdm amplifiercree rf10uf470pfcgh27015-tbtransistor a98 PDF

    CGH27060

    Abstract: str 16006 CGH40045F CGH27015 CGH27060F JESD22 tRANSISTOR 2.7 3.1 3.5 GHZ cw
    Contextual Info: CGH27060F 60 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for VHF, Comms, 3G, 4G, LTE,


    Original     		cgh27060fcgh2706cgh27060str 16006+4cgh40045fcgh27015jesd22transistor 2.7 3.1 3.5 ghz cw PDF

    CGH09120F

    Abstract: CGH25120F CDPA21480 CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F
    Contextual Info: Gallium Nitride GaN HEMT Transistors for BTS Applications Cree’s Doherty CDPA21480, performance. CGH21240F demonstration provides amplifier innovative The amplifier devices with uses digital two CDPA21480 Spectrum at 2.11, 2.14 & 2.17 GHz PAVE = 49 dBm, 2-Carrier WCDMA, PAR = 7.5 dB with CFR


    Original     		cdpa21480cgh21240fcgh09120fcgh25120f+6cgh27060fofdm predistortioncgh55030f440117cgh21120fcgh27015f PDF

    Contextual Info: CGH27060F 60 W Peak, 28V, GaN HEMT for Linear Communications from VHF to 3 GHz Cree’s CGH27060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for VHF, Comms, 3G, 4G, LTE,


    Original     		cgh27060fcgh2706 PDF

    str 16006

    Abstract: 44019
    Contextual Info: CGH27060F 60 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for VHF, Comms, 3G, 4G, LTE,


    Original     		cgh27060fcgh2706str 1600644019 PDF

    str 5 q 0765

    Abstract: CGH27060 str 16006 CGH27060F 10UF 470PF CGH27015 JESD22
    Contextual Info: CGH27060F 60 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for VHF, Comms, 3G, 4G, LTE,


    Original     		cgh27060fcgh2706str 5 q 0765cgh27060+5str 1600610uf470pfcgh27015jesd22 PDF

    on 5295 transistor

    Abstract: CGH27030 CGH27030F CGH27030-TB JESD22 CGH27030 s 27015F
    Contextual Info: CGH27030 30 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27030 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030


    Original     		cgh27030cgh270127015fcgh27030f+4on 5295 transistorcgh27030-tbjesd22cgh27030 s PDF

    Contextual Info: CGH27060F 60 W Peak, 28V, GaN HEMT for Linear Communications from VHF to 3 GHz Cree’s CGH27060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for VHF, Comms, 3G, 4G, LTE,


    Original     		cgh27060fcgh2706 PDF

    cgh40045

    Abstract: str 5 q 0765
    Contextual Info: CGH27060F 60 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for VHF, Comms, 3G, 4G, LTE,


    Original     		cgh27060fcgh2706cgh40045str 5 q 0765 PDF

    str 5 q 0765

    Contextual Info: CGH27060F 60 W Peak, 28V, GaN HEMT for Linear Communications from VHF to 3 GHz Cree’s CGH27060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for VHF, Comms, 3G, 4G, LTE,


    Original     		cgh27060fcgh2706str 5 q 0765 PDF