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Leuze electronic GmbH + Co KG 50127015 (PRK46C.1/4P-M12) PHOTOELECTRIC, POLARIZED RETRO-REFLECTIVE PHOTOELECTRIC SENSOR, 46C SERIES
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	50127015 (PRK46C.1/4P-M12)	Bulk	4	4 Weeks	1	1 $203.26 10 $203.26 100 $203.26 1000 $203.26 10000 $203.26	Buy Now
Littelfuse Inc 027015.PXPV
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	027015.PXPV		245			1 - 10 - 100 - 1000 - 10000 -	Get Quote
MACOM CGH27015P Trans RF MOSFET N-CH 120V 1.5A 3-Pin Case 440196
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Richardson RFPD	CGH27015P				50	1 - 10 - 100 - 1000 - 10000 -	Get Quote

27015P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
CGH27015 Abstract: CGH27015F CGH27015-TB CGH40010F JESD22 cgh40010 18pF Contextual Info: CGH27015 15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for VHF, Comms, 3G, 4G, LTE,	Original	cgh27015 cgh2701 27015p cgh27015f +5cgh27015-tb cgh40010f jesd22 cgh40010 18pf	PDF
CGH27015-TB Abstract: CGH27015 CGH27015F JESD22 Contextual Info: CGH27015 15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for VHF, Comms, 3G, 4G, LTE,	Original	cgh27015 cgh2701 27015p cgh27015-tb +2cgh27015f jesd22	PDF
Contextual Info: PRELIMINARY CGH27015 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for 2.3 to 2.9GHz WiMAX	Original	cgh27015 cgh2701 27015p	PDF
STR W 5753 a Abstract: str w 5753 str 5753 CGH27015-TB 10UF 470PF CGH27015 CGH27015F 44019 Contextual Info: CGH27015 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for 2.3 to 2.9GHz WiMAX	Original	cgh27015 cgh2701 27015p str w 5753 a +7str w 5753 str 5753 cgh27015-tb 10uf 470pf cgh27015f 44019	PDF
CGH27015-TB Abstract: CGH27015 Contextual Info: CGH27015 15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for VHF, Comms, 3G, 4G, LTE,	Original	cgh27015 cgh2701 27015p cgh27015-tb	PDF
Contextual Info: CGH27015 15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for VHF, Comms, 3G, 4G, LTE,	Original	cgh27015 cgh2701 27015p	PDF