CASCODE TRANSISTOR ARRAY Search Results

differential pair cascode

Abstract: piezoelectric transducer amplifier CA3095 cascode transistor array Super matched pair super beta transistor Transistor Array differential amplifier transistor Common Base amplifier common collector npn array npn 8 transistor array
Contextual Info: D Arrays Transistor-continued Super-Beta Transistor Array Incorporates a Super-Beta Differential Cascode Amplifier Plus 3 Independent n-p-n Transistors CA3095 Applications and Features D ifferen tial Cascode A m p lifie r: T w o super-beta n-p-n transistors —

CA3095E

Abstract: CA3095 cascode transistor array AN-D02 NPN pnp MATCHED PAIRS array
Contextual Info: File No. 591 Linear Integrated Circuits Solid State Monolithic Silicon Division CA3095E Super-Beta Transistor Array Differential Cascode A m plifier Plus 3 Independent Transistors Applications Differential Cascode Amplifier: • Super-beta pre-amplifier for op-amp

CA3054

Abstract: cascode transistor array CA3054M CA3054M96
Contextual Info: CA3054 S E M I C O N D U C T O R March 1993 Transistor Array - Dual Independent Differential Amp for Low Power Applications from DC to 120MHz Features Description • Two Differential Amplifiers on a Common Substrate The CA3054 consists of two independent differential

cascode transistor array

Abstract: NTE917
Contextual Info: NTE917 Integrated Circuit Dual, Independent Transistor Array, Differential Amp Description: The NTE917 is an integrated circuit consisting of two independent differential amplifiers with associated constant−current transistors on a common monolithic substrate. The six NPN transistors which comprise

cascode transistor array VCO

Abstract: UPA807T RF transistors with s-parameters UPA802T cascode transistor array AN1028 S21E UPA806T UPA808T transistor RF S-parameters
Contextual Info: California Eastern Laboratories APPLICATION NOTE AN1028 Testing Dual-Chip Transistor Arrays for VCO/Buffer Amp Combinations and Two-Stage Amplifier Applications I. Introduction Designers of handheld wireless products share common goals: higher performance, smaller size, and lower costs. Usually

Contextual Info: CA3054 ff H A R R IS S E M I C O N D U C T O R March1993 Transistor Array - Dual Independent Differential Amp for Low Power Applications from DC to 120MHz Features Description • Two Differential Amplifiers on a Common Substrate The CA3054 consists of two independent differential

Rethinking The Role Of pHEMT Cascode Amplifiers In RF Design

Contextual Info: Guest Column | February 10, 2014 Rethinking The Role Of pHEMT Cascode Amplifiers In RF Design By Alan Ake, Skyworks Solutions, Inc. I consider myself fortunate that, as a fresh-out-of-school EE, I was able to start my electrical engineering career designing radio frequency RF front ends for what are now antiquated one-way

Q1/2N3055 RCA

Contextual Info: Chapter 9 Using Analog CMOS Arrays to Create Current Sources 9.1 RCA pioneered CMOS Once the first stable MOSFETs had been created in the early 1960s by RCA researchers Steve Hofstein and Fred Heiman, and by Dr. Frank Wanlass at Fairchild Semiconductor, it opened the door to researching and developing other types of MOS

CA3054

Contextual Info: H A RR IS S E M I C O N D S E C T O R m U V blE D • 43 02 E7 1 O O H b ' m * A 'ìf ìR A HARRIS S E M I C O N D U C T O R March 1993 b41 H H A S Transistor Array - Dual Independent Differential Amp for Low Power Applications from DC to 120MHz Features

TSMC 40nm

Abstract: TSMC 40nm layout issue cascode transistor array 90 nm CMOS Double high-speed switching diode EP4SE530 90-nm-FPGAs transistor gds
Contextual Info: Process-Design Co-Optimization for FPGA Qi Xiang Altera Corporation, 101 Innovation Drive, San Jose, CA 95134 Email: qxiang@altera.com Abstract Advancing field programmable gate array FPGA technology can be very challenging. Some of the major difficulties are power management and high-speed

transistor BC 667

Abstract: bc 301 transistor A3026 transistor bc 325 two transistor forward differential pair cascode la3026 transistor differential amplifier MONOLITHIC DIODE ARRAYS MA3036
Contextual Info: MA3018 • JA3018A • pA3019 • mA3026 • pA3036 MA3039 • |jA3045 • pA3046 • \i A3054 • mA3086 TRANSISTOR AND DIODE ARRAYS FA IR CH ILD LINEAR INTEGRATED CIRCUITS G E N E R A L D E S C R IP T IO N — Fairchild Transistor and Diode Arrays consist of general purpose integrated circuit devices constructed

transistor

Abstract: A 798 transistor high power npn UHF transistor Transistor Array differential amplifier TRANSISTOR d 718 gilbert cell differential pair 745 transistor NPN transistor transistor military differential pair transistor
Contextual Info: LINEAR TRANSISTOR AND DIODE ARRAYS, AND DIFFERENTIAL AMPLIFIERS PAGE SELECTION G U ID E .

Large-Signal Characterization and Modeling of MOSFET for PA Applications

Abstract: NONLINEAR MODEL LDMOS
Contextual Info: RTUIF-28 Large-Signal Characterization and Modeling of MOSFET for PA Applications Sunyoung Lee and Tzung-Yin Lee Skyworks Solutions, Inc. 5221 California Avenue, Irvine, CA 92617 Abstract — This paper presents the large-signal model requirements and generation as well as the 1- and 2-tone

CA3049T

Abstract: A3102 transistor j307 3049T CA3102 J307
Contextual Info: CA3049, CA3102 ¡3 Dual High Frequency Differential Amplifiers For Low Power Applications Up to 500MHz November 1996 Features Description • Power Gain 23dB T yp . 200MHz The C A 3049 T and C A 3 102 consist of two independent

Contextual Info: CA3127 HARRIS S E M I C O N D U C T O R High Frequency N-P-N Transistor Array March 1993 Features Description • Gain Bandwidth Product fT . >1GHz The CA3127* consists of five general purpose silicon n-p-n transistors on a common monolithic substrate. Each of the

CA3127E

Contextual Info: CA3127 Semiconductor High Frequency NPN Transistor Array August 1996 Features Description • Gain Bandwidth Product fT . >1GHz The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the

CA3127

Abstract: TRANSISTOR 100MHz zener y21 CA3127E
Contextual Info: d ì CÌLJ CA3127 h -L A J R F R IS S E M I C O N D U C T O R High Frequency NPN Transistor Array August 1996 Features Description • Gain Bandwidth Product fT . >1GHz The CA3127 consists of five general purpose silicon NPN

Contextual Info: G E SOLID STATE 01 D E l 3675081 0014b43 T r r - S _ IB _ m 3 " 2 Arrays CA3127 High-Frequency N-P-N Transistor Array For Low-Power Applications at Frequencies up to 500 MHz Features:

AN5337 ca3028

Abstract: CA3028 AN5337 transistor hh 004 circuits diagram CA3053E CA3053 CA3028A CA30288 ca3028a equivalent AN5337 equivalent
Contextual Info: ÍSJ h a r r i s U P CA3028A, CA3028B, S E M I C O N D U C T O R Differential/Cascode Amplifiers for Commercial and Industrial Equipment from DC to 120MHz November 1996 Features Description • Controlled for Input Offset Voltage, Input Offset Current and Input Bias Current CA3028 Series Only

z144

Abstract: zener Diode B22 1021-P1 cascode transistor array CA3127 CA3127E CA3127M CA3127M96 HP342A ,zener Diode B22
Contextual Info: CA3127 S E M I C O N D U C T O R High Frequency NPN Transistor Array August 1996 Features Description • Gain Bandwidth Product fT . . . . . . . . . . . . . . . . >1GHz The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the

HP-343A

Abstract: HP342A y12 t 646 HP343A CA3127E 1021-P1 cascode transistor array 150MIL CA3127 CA3127F
Contextual Info: CA3127 S E M I C O N D U C T O R High Frequency N-P-N Transistor Array March 1993 Features Description • Gain Bandwidth Product fT . . . . . . . . . . . . . . . . >1GHz The CA3127* consists of five general purpose silicon n-p-n transistors on a common monolithic substrate. Each of the

201934A

Abstract: AAT2430A AAT2491 AAT2405 cascode transistor array aat2430 AAT2491IAN-T1 PN channel MOSFET 10A TVS 100V 300A AAT2430A-1
Contextual Info: DATA SHEET AAT2491 Dual N-Channel HV Cascode-Clamp, Lateral TrenchDMOS Array General Description Features The AAT2491 is a monolithically integrated dual N-channel high-voltage cascode-clamp lateral TrenchDMOS array. The dual-channel AAT2491 monolithically integrates

Contextual Info: HA RR IS SEflICOND S E CT OR im J MGE D 4302271 0032314 1 !HAS HARRIS High-Frequency N -P-N Transistor Array August 1991 Features Description • Galn-Bandwtdth Product f x . >1GHz • Power Gain .30dB (Typ) at 100MHz

z144

Abstract: CA3127 1021-P1 cascode transistor array HP342A CA3127E CA3127M CA3127M96 zener Diode B22
Contextual Info: CA3127 High Frequency NPN Transistor Array August 1996 Features Description • Gain Bandwidth Product fT . . . . . . . . . . . . . . . . >1GHz The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the